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公开(公告)号：US09910017B2
公开(公告)日：2018-03-06
申请号：US15177899
申请日：2016-06-09
CPC分类号： G01N29/2406 , A61B8/4483 , B06B1/0292 , B81B7/007 , B81B2201/0271 , B81C1/00238 , B81C1/00301 , B81C2201/019 , B81C2203/036 , B81C2203/0792 , H01L2224/4813 , H01L2924/0002 , H01L2924/146 , H01L2924/1461
摘要： Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.
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公开(公告)号：US20180003678A1
公开(公告)日：2018-01-04
申请号：US15689863
申请日：2017-08-29
CPC分类号： G01N29/2406 , A61B8/4483 , B06B1/0292 , B81B7/007 , B81B2201/0271 , B81C1/00238 , B81C1/00301 , B81C2201/019 , B81C2203/036 , B81C2203/0792 , H01L2224/4813 , H01L2924/0002 , H01L2924/146 , H01L2924/1461
摘要： Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.
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公开(公告)号：US20170225196A1
公开(公告)日：2017-08-10
申请号：US15581511
申请日：2017-04-28
发明人： Jonathan M. Rothberg , Keith G. Fife , Tyler S. Ralston , Gregory L. Charvat , Nevada J. Sanchez
CPC分类号： B06B1/02 , B06B1/0292 , B81B3/0021 , B81B7/0077 , B81B2203/0127 , B81B2203/0315 , B81B2207/015 , B81C1/00158 , B81C2201/013 , B81C2203/0118 , B81C2203/0735 , B81C2203/0771 , G10K9/12 , G10K11/18
摘要： CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided.
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公开(公告)号：US20170163225A1
公开(公告)日：2017-06-08
申请号：US14957395
申请日：2015-12-02
CPC分类号： H03F3/16 , A61B5/6801 , A61B8/4444 , A61B8/5207 , G01S7/52025 , H03F1/086 , H03F3/45183 , H03F2200/408 , H03F2200/555 , H03F2203/45471 , H03F2203/45504 , H03F2203/45631 , H03F2203/45634 , H03F2203/45646 , H03F2203/45648 , H03F2203/45674 , H03F2203/45686 , H03F2203/45692 , H03F2203/45726
摘要： A variable current trans-impedance amplifier (TIA) for an ultrasound device is described. The TIA may be coupled to an ultrasonic transducer to amplify an output signal of the ultrasonic transducer representing an ultrasound signal received by the ultrasonic transducer. During acquisition of the ultrasound signal by the ultrasonic transducer, one or more current sources in the TIA may be varied.
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公开(公告)号：US09499392B2
公开(公告)日：2016-11-22
申请号：US14172383
申请日：2014-02-04
发明人： Jonathan M. Rothberg , Keith G. Fife , Tyler S. Ralston , Gregory L. Charvat , Nevada J. Sanchez
CPC分类号： B06B1/0292 , B06B1/02 , B81B3/0021 , B81B2203/0127 , B81B2203/0315 , B81B2207/015 , B81C1/00158 , B81C2201/013 , B81C2203/0118 , B81C2203/0735 , B81C2203/0771 , G10K9/12 , G10K11/18
摘要： CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided.
摘要翻译： 描述了CMOS超声波传感器及其制造方法。 所述方法可以包括在第一晶片上形成空腔并将第一晶片接合到第二晶片。 可以处理第二晶片以形成用于空腔的膜。 可以提供对腔的电接入。
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46.发明申请公开(公告)号：US20160207760A1
公开(公告)日：2016-07-21
申请号：US15042931
申请日：2016-02-12
发明人： Jonathan M. Rothberg , Keith G. Fife , Tyler S. Ralston , Gregory L. Charvat , Nevada J. Sanchez
CPC分类号： B81C1/00301 , B06B1/02 , B06B1/0292 , B81B7/007 , B81C1/00134 , B81C1/00158 , B81C1/00246 , B81C2201/0195 , B81C2203/0735 , B81C2203/0771 , G01N29/2406 , H01L29/84 , H04R19/005
摘要： Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.
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47.发明申请公开(公告)号：US20150084053A1
公开(公告)日：2015-03-26
申请号：US14561384
申请日：2014-12-05
发明人： Jonathan M. Rothberg , Keith G. Fife , Tyler S. Ralston , Gregory L. Charvat , Nevada J. Sanchez
IPC分类号： B06B1/02
CPC分类号： B81C1/00301 , B06B1/02 , B06B1/0292 , B81B7/007 , B81C1/00134 , B81C1/00158 , B81C1/00246 , B81C2201/0195 , B81C2203/0735 , B81C2203/0771 , G01N29/2406 , H01L29/84 , H04R19/005
摘要： Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.
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公开(公告)号：US20140288428A1
公开(公告)日：2014-09-25
申请号：US14208281
申请日：2014-03-13
发明人： Jonathan M. Rothberg , Keith G. Fife , Tyler S. Ralston , Gregory L. Charvat , Nevada J. Sanchez
CPC分类号： A61B8/4494 , A61B8/14 , A61B8/145 , A61B8/4483 , A61B8/4488 , A61B8/485 , A61B8/54 , A61N7/00 , A61N7/02 , B06B1/02 , B81C1/00246 , G01S7/52019 , G01S7/52034 , G01S7/52047 , G01S7/5208 , G01S15/02 , G01S15/8915 , G01S15/8977 , H04R1/00 , Y10T29/41
摘要： To implement a single-chip ultrasonic imaging solution, on-chip signal processing may be employed in the receive signal path to reduce data bandwidth and a high-speed serial data module may be used to move data for all received channels off-chip as digital data stream. The digitization of received signals on-chip allows advanced digital signal processing to be performed on-chip, and thus permits the full integration of an entire ultrasonic imaging system on a single semiconductor substrate. Various novel waveform generation techniques, transducer configuration and biasing methodologies, etc., are likewise disclosed. HIFU methods may additionally or alternatively be employed as a component of the “ultrasound-on-a-chip” solution disclosed herein.
摘要翻译： 为了实现单芯片超声成像解决方案，可以在接收信号路径中采用片上信号处理以减少数据带宽，并且可以使用高速串行数据模块来将数据作为数字的片外移动数据 数据流。 片上接收信号的数字化允许在芯片上执行高级数字信号处理，从而允许整个超声波成像系统完全集成在单个半导体衬底上。 同样公开了各种新颖的波形产生技术，换能器配置和偏置方法等。 HIFU方法可以额外地或替代地用作本文公开的“片上超声”解决方案的组件。
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公开(公告)号：US20210384872A1
公开(公告)日：2021-12-09
申请号：US17331538
申请日：2021-05-26
摘要： A variable current trans-impedance amplifier (TIA) for an ultrasound device is described. The TIA may be coupled to an ultrasonic transducer to amplify an output signal of the ultrasonic transducer representing an ultrasound signal received by the ultrasonic transducer. During acquisition of the ultrasound signal by the ultrasonic transducer, one or more current sources in the TIA may be varied.
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公开(公告)号：US11128267B2
公开(公告)日：2021-09-21
申请号：US16178117
申请日：2018-11-01
摘要： A variable current trans-impedance amplifier (TIA) for an ultrasound device is described. The TIA may be coupled to an ultrasonic transducer to amplify an output signal of the ultrasonic transducer representing an ultrasound signal received by the ultrasonic transducer. During acquisition of the ultrasound signal by the ultrasonic transducer, one or more current sources in the TIA may be varied.
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