Display substrate, manufacturing method thereof and display device

    公开(公告)号:US12171117B2

    公开(公告)日:2024-12-17

    申请号:US17604931

    申请日:2021-07-08

    Inventor: Cheng Xu Chen Xu

    Abstract: A display substrate and a display device are disclosed. In the display substrate, each sub-pixel includes: a conductive light-shielding structure; a buffer layer; a semiconductor layer; an interlayer insulating layer, located on a side of the semiconductor layer away from the buffer layer; and a conductive layer, located on a side of the interlayer insulating layer away from the semiconductor layer, and including a conductive structure. The conductive light-shielding structure includes a first main body portion and a first recessed portion, an average thickness of the first recessed portion is smaller than an average thickness of the first main body portion. The display substrate further includes a first contact hole, the first contact hole penetrates both the interlayer insulating layer and the buffer layer, the conductive structure is electrically connected with the first recessed portion through the first contact hole.

    Display panel and display device
    45.
    发明授权

    公开(公告)号:US11545088B2

    公开(公告)日:2023-01-03

    申请号:US16480493

    申请日:2019-01-11

    Abstract: A display panel and a display device are provided. The display panel includes: a substrate, a plurality of pixel units, a functional signal line, and a first conductive structure. The substrate includes a display area and a peripheral area on at least one side of the display area, the plurality of pixel units are in the display area, each pixel unit includes a light-emitting unit and a pixel circuit structure for providing a driving current to the light-emitting unit, and the light-emitting unit is an electroluminescent element. The functional signal line is connected with the pixel circuit structure of each pixel unit and provides a common voltage signal for the pixel circuit structure. The first conductive structure is connected in parallel with the functional signal line and is located at a layer different from that of the functional signal line.

    Pixel driving circuit, array substrate and display device

    公开(公告)号:US11386841B2

    公开(公告)日:2022-07-12

    申请号:US17278692

    申请日:2020-07-30

    Abstract: A pixel driving circuit, an array substrate and a display device are provided. The pixel driving circuit includes a first interlayer dielectric layer and a second interlayer dielectric layer. The first interlayer dielectric layer is arranged on the side of a gate layer lead away from a base substrate and is formed with a first via hole exposing the gate layer lead. The second interlayer dielectric layer is arranged on the side of the first interlayer dielectric layer away from the base substrate and is formed with a second via hole exposing the first via hole. A source drain layer lead is arranged on the side of the second interlayer dielectric layer away from the base substrate and is electrically connected to the gate layer lead through the first via hole and the second via hole.

    Thin film transistor and method for manufacturing a thin film transistor

    公开(公告)号:US11309427B2

    公开(公告)日:2022-04-19

    申请号:US16642638

    申请日:2019-03-04

    Abstract: The present disclosure relates to a thin film transistor and a manufacturing method thereof. The thin film transistor includes a substrate, a first semiconductor layer, a gate dielectric layer, and a gate electrode sequentially stacked on the substrate, the first semiconductor layer has a first portion located in a channel region of the thin film transistor and a second portion in source/drain regions of the thin film transistor and located on both sides of the first portion, the second portion and first sub-portions of the first portion adjacent to the second portion include an amorphous semiconductor material, a second sub-portion of the first portion between the first sub-portions includes a polycrystalline semiconductor material, and a second semiconductor layer located in the source/drain regions and in contact with the second portion, wherein a conductivity of the second semiconductor layer is higher than a conductivity of the amorphous semiconductor material.

    CMOS structure and method for manufacturing CMOS structure

    公开(公告)号:US11264384B2

    公开(公告)日:2022-03-01

    申请号:US16642723

    申请日:2019-03-04

    Abstract: The disclosure relates to a CMOS structure and a manufacturing method thereof. The CMOS structure includes a substrate and an N-type TFT and a P-type TFT on the substrate. The N-type TFT includes a first gate electrode, a first active layer, and a first gate dielectric layer therebetween. The first active layer includes a first semiconductor layer, a second semiconductor layer of the N-type, and a third semiconductor layer of the N-type which are located at opposite ends of the first semiconductor layer and sequentially stacked in a direction away from the first gate dielectric layer. An N-type doping concentration of the second semiconductor layer is smaller than that of the third semiconductor layer. The P-type TFT includes a fifth semiconductor layer and a sixth semiconductor layer. A P-type doping concentration of the fifth semiconductor layer is smaller than that of the sixth semiconductor layer.

    Array substrate, display panel and display device

    公开(公告)号:US11210989B2

    公开(公告)日:2021-12-28

    申请号:US16945110

    申请日:2020-07-31

    Abstract: Disclosed are an array substrate, a display panel and a display device. The display panel includes a plurality of sub-pixel regions; each of the sub-pixel regions includes a pixel driving circuit, a white electroluminescent device connected with the pixel driving circuit and a color resist layer corresponding to the sub-pixel region; the plurality of sub-pixel regions include a first-color sub-pixel region, a second-color sub-pixel region and a third-color sub-pixel region; a width-to-length ratio of a channel region of the driving transistor in the first-color sub-pixel region is greater than a width-to-length ratio of a channel region of the driving transistor in the second-color sub-pixel region, and the width-to-length ratio of the channel region of the driving transistor in the second-color sub-pixel region is greater than a width-to-length ratio of a channel region of the driving transistor in the third-color sub-pixel region.

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