Abstract:
The display panel includes multiple sub-pixel areas, a first substrate and a second substrate oppositely arranged to form a cell; and a liquid crystal layer disposed between the first substrate and the second substrate. The second substrate includes a first sub-pixel electrode and a second sub-pixel electrode disposed in each of multiple areas respectively corresponding to the plurality of sub-pixel areas, a protruded object is disposed in a gap between the first sub-pixel electrode and the second sub-pixel electrode, which are adjacent to each other and are respectively included in different sub-pixel areas, and a projection of the protruded object at least partially overlaps an area of the liquid crystal layer corresponding to the gap.
Abstract:
An organic light emitting diode (OLED) display device and a preparation method thereof, and a display apparatus are disclosed. The OLED display device includes: a thin layer transistor (22), a first electrode (23′), a second electrode (26′) and an organic functional layer (25) located between the first electrode (23′) and the second electrode (26′). The thin film transistor (22) comprises a gate electrode (221), a source electrode (222) and a drain electrode (223); and the first electrode (23′) is electrically connected with the drain electrode (223). The display device further comprises a first auxiliary electrode (27) formed from a topological insulator. The first auxiliary electrode (27) is electrically connected with the second electrode (26′) to provide electrical signals for the second electrode (26′). The OLED display avoids the problems of high IR drop and non-uniform lightness caused by the large transmission resistance of the cathodes.
Abstract:
A thin film transistor and manufacturing method thereof, an array substrate and a display device are provided. In the manufacturing method of the thin film transistor, manufacturing an active layer includes: forming a germanium thin film, and forming pattern of the active layer through a patterning process; conducting a topological treatment on the germanium thin film with a functionalized element, so as to obtain the active layer (4) with topological semiconductor characteristics. The resultant thin film transistor has a higher carrier mobility and a better performance.
Abstract:
A conductive thin film, a touch panel and a manufacturing method for the same, and a display device are provided. Material for forming the conductive thin film comprise topological insulator, the conductive thin film has a two-dimensional nanostructure, which solves the technical problem that the resistance of electrodes of the touch panel is relatively harge.
Abstract:
A solar cell and a method of manufacturing the same are provided. The method comprises: forming a first electrode layer on a substrate; forming a semiconductor film of first conduction type on the first electrode layer; forming a germanium film on the semiconductor film of first conduction type, and topologizing the germanium film by using a functionalization element so as to obtain a semiconductor film of second conduction type having characteristics of topological insulator, the semiconductor film of first conduction type mating with the semiconductor film of second conduction type having characteristics of topological insulator to form a p-n junction; and forming a second electrode layer on the semiconductor film of second conduction type. The solar cell manufactured according this method has higher electric energy conversion efficiency.
Abstract:
An electrode plate, a manufacturing method thereof, and an energy storage device are disclosed. The method for manufacturing an electrode plate includes: forming a germanium film on a metal substrate; carrying out a topology treatment on the germanium film by using a functionalization element, to obtain the electrode plate with a topological semiconductor characteristic. The electrode plate prepared by the above method has a high conductivity and a low internal resistance.