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公开(公告)号：US20210305337A1
公开(公告)日：2021-09-30
申请号：US17346539
申请日：2021-06-14
Inventor： Wei Song , Liangchen Yan , Ce Zhao , Dongfang Wang , Bin Zhou , Yuankui Ding , Jun Liu , Yingbin Hu , Wei Li
Abstract: The present disclosure relates to the display technology, and provides an OLED display substrate, a method for manufacturing the OLED display substrate and a display device. The method includes: forming pixel definition layer transition patterns with metal; and oxidizing the pixel definition layer transition patterns to form an insulative pixel definition layer.
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42.发明授权公开(公告)号：US11018236B2
公开(公告)日：2021-05-25
申请号：US16397386
申请日：2019-04-29
Inventor： Tongshang Su , Dongfang Wang , Ce Zhao , Bin Zhou , Liangchen Yan
IPC: H01L29/45 , G03F7/16 , G03F7/20 , G03F7/26 , H01L21/02 , H01L21/441 , H01L21/467 , H01L21/4763 , H01L27/12 , H01L29/24 , H01L29/66 , H01L29/786 , H01L21/027
Abstract: The present disclosure provides a thin film transistor, including a base substrate, an active layer and a source/drain, and a conductive layer. The active layer and an outer edge of the conductive layer are formed in the same etching process. The present disclosure further provides a method for manufacturing a thin film transistor, including forming an active material layer and a conductive material layer, forming a photoresist on the conductive material layer, exposing and developing the photoresist by means of a halftone mask, removing segments of the active material layer and the conductive material layer corresponding to a photoresist completely-removed region by a same etching process, partially removing the photoresist in a photoresist completely-retained region and completely removing the photoresist in a photoresist partially-retained region, and removing a segment of the conductive material layer corresponding to the photoresist partially-retained region.
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公开(公告)号：US10930786B2
公开(公告)日：2021-02-23
申请号：US16554657
申请日：2019-08-29
Inventor： Yuankui Ding , Ce Zhao , Guangcai Yuan , Yingbin Hu , Leilei Cheng , Jun Cheng , Bin Zhou
IPC: H01L29/786 , H01L27/12 , H01L29/66
Abstract: A thin film transistor (TFT), a manufacturing method, an array substrate, a display panel, and a device is disclosed. The TFT includes a hydrogen-containing buffer layer located on a substrate; an oxide semiconductor layer located on the buffer layer, wherein the oxide semiconductor layer includes a conductor region and a semiconductor region; a source or drain located on the conductor region, and electrically connected to the conductor region; and a gate structure located on the semiconductor region.
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44.发明授权公开(公告)号：US10923347B2
公开(公告)日：2021-02-16
申请号：US16442830
申请日：2019-06-17
Inventor： Wei Song , Ce Zhao , Heekyu Kim , Ning Liu , Yuankui Ding , Wei Li , Yingbin Hu
Abstract: A metal oxide film and a manufacturing method thereof, a thin film transistor and an array substrate are provided. The manufacturing method of the metal oxide film includes: forming a metal oxide film on a base substrate; and supplying a negative ion to the metal oxide film for a preset time period by performing a anodization method, to convert a portion of metal ions in the metal oxide film into a metal oxide.
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公开(公告)号：US10916615B1
公开(公告)日：2021-02-09
申请号：US16826992
申请日：2020-03-23
Inventor： Yingbin Hu , Ce Zhao , Ming Wang , Yuankui Ding , Wei Song , Liangchen Yan
Abstract: A display panel includes a substrate; a conductive layer disposed on the substrate; a gate insulating layer disposed on the conductive layer; a gate layer disposed on the gate insulating layer, wherein the gate layer has a thickness larger than a thickness of the conductive layer; a groove extending toward the substrate and punching through the gate layer, orthographic projections of the groove and the conductive layer on the substrate overlapping, and gate layers separated on two sides of the groove being connected to the conductive layer; an interlayer dielectric layer disposed on a side of the gate layer away from the substrate and covering the conductive layer and filling the groove; and an auxiliary electrode layer disposed on the interlayer dielectric layer, wherein the orthographic projections of the auxiliary electrode layer and the gate layer on substrate do not overlap, and the orthographic projections of the auxiliary electrode layer and the groove on the substrate overlap.
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Patent Agency Ranking
46.发明授权公开(公告)号：US10818706B2
公开(公告)日：2020-10-27
申请号：US16337544
申请日：2018-05-29
Inventor： Tongshang Su , Guangcai Yuan , Dongfang Wang , Ce Zhao , Bin Zhou , Jun Liu , Jifeng Shao , Qinghe Wang , Yang Zhang
IPC: H01L27/12 , H01L29/423 , H01L29/66 , H01L29/786 , H01L29/417
Abstract: There are provided a thin-film transistor and a production method thereof, an array substrate, and a display panel. The method comprises forming an active layer, a gate insulating layer, and a gate electrode on a substrate, wherein conductor conversion treatment is performed on both sides of the homogeneous active material layer to obtain an active layer, and the active layer comprises conductor regions located at both sides and a non-conductor region located at the center, wherein a projection of the gate electrode on the substrate is within a projection of the non-conductor region on the substrate, and the distances from the projection of the gate electrode to projections of the two conductor regions on the substrate are each between 0 micrometer and 1 micrometer.
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公开(公告)号：US10734456B2
公开(公告)日：2020-08-04
申请号：US16488924
申请日：2019-01-31
Inventor： Yongchao Huang , Dongfang Wang , Jun Cheng , Min He , Bin Zhou , Ce Zhao
Abstract: A display panel, a method for manufacturing the display panel, and a display apparatus are provided. The display panel includes a base substrate; a thin film transistor; an OLED structure formed on the thin film transistor including a first and second electrodes arranged opposite to each other and an organic light emitting layer arranged between the first and second electrodes; a light shielding layer arranged between the first electrode and the organic light emitting layer. The light shielding layer includes a first and a second light shielding layers. The first light shielding layer includes a first light shielding portion and a first opening portion corresponding to a pixel area. The second light shielding layer includes a second light shielding portion and a second opening portion corresponding to a pixel area. The second light shielding portion includes a first and second parts.
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48.发明申请公开(公告)号：US20200035836A1
公开(公告)日：2020-01-30
申请号：US16393023
申请日：2019-04-24
Inventor： Yingbin Hu , Ce Zhao , Yuankui Ding , Wei Li , Wei Song , Luke Ding , Jun Liu , Liangchen Yan
IPC: H01L29/786 , H01L29/66 , H01L27/32
Abstract: Provided is a thin film transistor, including: a conductive light shielding layer; a metal oxide layer arranged on the light shielding layer; a buffer layer, an active layer, a gate insulating layer, a gate electrode, and an interlayer insulating layer arranged in sequence on the metal oxide layer, the interlayer insulating layer and the buffer layer comprising a first via hole and a second via hole for exposing the active layer, and a third via hole for exposing the metal oxide layer, in which a portion of the metal oxide layer exposed through the third via hole is a conductive portion, and other portions are insulative; and a source electrode and a drain electrode arranged on the interlayer insulating layer, in which the source electrode is connected to the active layer through the first via hole, and the drain electrode is connected to the active layer through the second via hole and connected to the conductive portion through the third via hole.
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公开(公告)号：US09502517B2
公开(公告)日：2016-11-22
申请号：US14430095
申请日：2014-05-30
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Guangcai Yuan , Dongfang Wang , Jun Cheng , Xiangyong Kong , Ce Zhao
IPC: H01L29/24 , H01L29/423 , H01L27/12 , H01L29/51 , H01L29/786
CPC classification number: H01L29/42384 , H01L27/1225 , H01L27/124 , H01L27/1285 , H01L27/1288 , H01L29/24 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/78606 , H01L29/7869 , H01L29/78696 , H01L2029/42388
Abstract: A display device, an array substrate and a fabrication method thereof are provided. The array substrate comprises a data line and a gate line, the data line and the gate line intersect with each other to define a pixel region. The pixel region comprises a first thin film transistor and a pixel electrode. The fabrication method comprises: forming an active layer film and a source-drain metal layer on a substrate, and forming an active layer, a source electrode and a drain electrode of the first thin film transistor on the substrate by a single patterning process.
Abstract translation: 提供了显示装置，阵列基板及其制造方法。 阵列基板包括数据线和栅极线，数据线和栅极线彼此相交以限定像素区域。 像素区域包括第一薄膜晶体管和像素电极。 制造方法包括：在衬底上形成有源层膜和源极 - 漏极金属层，并通过单一图案化工艺在衬底上形成第一薄膜晶体管的有源层，源电极和漏电极。
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50.发明申请THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME, DISPLAY SUBSTRATE AND DISPLAY DEVICE 审中-公开薄膜晶体管及其制造方法，显示基板和显示装置公开(公告)号：US20150311345A1
公开(公告)日：2015-10-29
申请号：US14443554
申请日：2014-09-19
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Ce Zhao
IPC: H01L29/786 , H01L29/66 , H01L27/12 , H01L21/441 , H01L21/477 , H01L29/24 , H01L21/02
CPC classification number: H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/477 , H01L29/66969 , H01L29/78606 , H01L29/78609 , H01L29/78696
Abstract: The present invention provides a thin film transistor, a fabricating method thereof, a display substrate and a display device. In the fabricating method, a protective layer and an oxide active layer are patterned by one patterning process, to form patterns of the protective layer and the oxide active layer; and annealing is performed in an oxygen-containing atmosphere, so that the material of the oxide active layer diffuses into the protective layer through a contact surface between the oxide active layer and the protective layer, to form a transitional region in the protective layer, and the material of the protective layer diffuses into the oxide active layer through the contact surface, to form a transitional region in the oxide active layer, the transitional regions are configured to reduce an off-state current of the thin film transistor.
Abstract translation: 本发明提供一种薄膜晶体管，其制造方法，显示基板和显示装置。 在制造方法中，通过一个图案化工艺对保护层和氧化物活性层进行构图，以形成保护层和氧化物活性层的图案; 并且在含氧气氛中进行退火，使得氧化物活性层的材料通过氧化物活性层和保护层之间的接触面扩散到保护层中，以在保护层中形成过渡区域，并且 保护层的材料通过接触表面扩散到氧化物有源层中，以在氧化物有源层中形成过渡区域，过渡区域被配置为减小薄膜晶体管的截止电流。
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