公开(公告)号：US20200013586A1

公开(公告)日：2020-01-09

申请号：US16447083

申请日：2019-06-20

Applicant: Applied Materials, Inc.

Inventor： Jun MA ,  Jian LI ,  David H. QUACH ,  Amit Kumar BANSAL ,  Juan Carlos ROCHA

IPC: H01J37/32 ,  H01L21/67 ,  C23C16/458

Abstract: In some embodiments, the semiconductor process apparatus comprises a conductive support comprising mesh, a conductive shaft comprising a conductive rod, and a plurality of connection elements. The plurality of connection elements are coupled to the mesh in parallel and are connected to the rod at a single junction. The plurality of connection elements help spread RF current, reducing localized heating in the substrate, resulting in a more uniform film deposition. Additionally, using connection elements that are merged and coupled to a single RF rod allow for the rod to be made of materials that can conduct RF current at lower temperatures.

公开(公告)号：US20190252158A1

公开(公告)日：2019-08-15

申请号：US16188722

申请日：2018-11-13

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar KULSHRESHTHA ,  Ziqing DUAN ,  Abdul Aziz KHAJA ,  Zheng John YE ,  Amit Kumar BANSAL

IPC: H01J37/32 ,  C23C16/509 ,  C23C16/44 ,  C23C16/36 ,  C23C16/34 ,  C23C16/458 ,  C23C16/02 ,  H01L21/683

CPC classification number: H01J37/32477 ,  C23C16/0272 ,  C23C16/029 ,  C23C16/347 ,  C23C16/36 ,  C23C16/4404 ,  C23C16/4586 ,  C23C16/5096 ,  H01J37/32082 ,  H01L21/6831

Abstract: The present disclosure generally relates to processing chamber seasoning layers having a graded composition. In one example, the seasoning layer is a boron-carbon-nitride (BCN) film. The BCN film may have a greater composition of boron at the base of the film. As the BCN film is deposited, the boron concentration may approach zero, while the relative carbon and nitrogen concentration increases. The BCN film may be deposited by initially co-flowing a boron precursor, a carbon precursor, and a nitrogen precursor. After a first period of time, the flow rate of the boron precursor may be reduced. As the flow rate of boron precursor is reduced, RF power may be applied to generate a plasma during deposition of the seasoning layer.

公开(公告)号：US20190080889A1

公开(公告)日：2019-03-14

申请号：US15701222

申请日：2017-09-11

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit GHOSH ,  Shailendra SRIVASTAVA ,  Tejas ULAVI ,  Yusheng ZHOU ,  Amit Kumar BANSAL ,  Sanjeev BALUJA

IPC: H01J37/32 ,  H01L21/67

Abstract: Implementations disclosed herein generally relate to systems and methods of protecting a substrate support in a process chamber from cleaning fluid during a cleaning process. The method of cleaning the process chamber includes positioning in the process chamber a cover substrate above a substrate support and a process kit that separates a purge volume from a process volume. The method of cleaning includes flowing a purge gas in the purge volume to protect the substrate support and flowing a cleaning fluid to a process volume above the cover substrate, flowing the cleaning fluid in the process volume to an outer flow path, and to an exhaust outlet in the chamber body. The purge volume is maintained at a positive pressure with respect to the process volume to block the cleaning fluid from the purge volume.

公开(公告)号：US20170101712A1

公开(公告)日：2017-04-13

申请号：US14965061

申请日：2015-12-10

Applicant: Applied Materials, Inc.

Inventor： Amit Kumar BANSAL ,  Juan Carlos ROCHA-ALVAREZ ,  Sanjeev BALUJA ,  Sam H. KIM ,  Tuan Anh NGUYEN

IPC: C23C16/455

CPC classification number: C23C16/45565 ,  C23C16/45574

Abstract: The present disclosure relates to a semiconductor processing apparatus. The processing chamber includes a chamber body and lid defining an interior volume, a substrate support disposed in the interior volume and a showerhead assembly disposed between the lid and the substrate support. The showerhead assembly includes a faceplate configured to deliver a process gas to a processing region defined between the showerhead assembly and the substrate support and a underplate positioned above the faceplate, defining a first plenum between the lid and the underplate, the having multiple zones, wherein each zone has a plurality of openings that are configured to pass an amount of inert gas from the first plenum into a second plenum defined between the faceplate and the underplate, in fluid communication with the plurality of openings of each zone such that the inert gas mixes with the process gas before exiting the showerhead assembly.

公开(公告)号：US20150262859A1

公开(公告)日：2015-09-17

申请号：US14632648

申请日：2015-02-26

Applicant: APPLIED MATERIALS, INC.

Inventor： Ganesh BALASUBRAMANIAN ,  Juan Carlos ROCHA-ALVAREZ ,  Ramprakash SANKARAKRISHNAN ,  Robert KIM ,  Dale R. DU BOIS ,  Kirby Hane FLOYD ,  Amit Kumar BANSAL ,  Tuan Anh NGUYEN

IPC: H01L21/687 ,  H01L21/02 ,  C23C16/458

CPC classification number: H01L21/02274 ,  C23C16/4584 ,  C23C16/4585 ,  C23C16/505 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32568 ,  H01J37/32623 ,  H01J37/32715 ,  H01J37/32724 ,  H01J37/32743 ,  H01J2237/3321 ,  H01L21/67103 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/68792

Abstract: A method and apparatus for processing a substrate are provided. The apparatus includes a pedestal and rotation member, both of which are moveably disposed within a processing chamber. The rotation member is adapted to rotate a substrate disposed in the chamber. The substrate may be supported by an edge ring during processing. The edge ring may selectively engage either the pedestal or the rotation member. In one embodiment, the edge ring engages the pedestal during a deposition process and the edge ring engages the rotation member during rotation of the substrate. The rotation of the substrate during processing may be discrete or continuous.

Abstract translation: 提供了一种用于处理衬底的方法和设备。 该装置包括基座和旋转构件，两者都可移动地设置在处理室内。 旋转构件适于旋转设置在腔室中的衬底。 衬底可以在加工过程中被边缘环支撑。 边缘环可以选择性地接合基座或旋转构件。 在一个实施例中，边缘环在沉积工艺期间接合基座，并且边缘环在基底旋转期间接合旋转构件。 处理过程中衬底的旋转可以是离散的或连续的。

公开(公告)号：US20140264059A1

公开(公告)日：2014-09-18

申请号：US14174378

申请日：2014-02-06

Applicant: Applied Materials, Inc.

Inventor： Sanjeev BALUJA ,  Tuan Anh NGUYEN ,  Abhijit KANGUDE ,  Bozhi YANG ,  Amit Kumar BANSAL ,  Inna TUREVSKY ,  Scott A. HENDRICKSON ,  Juan Carlos ROCHA- ALVAREZ ,  Thomas NOWAK

IPC: H01L21/66

CPC classification number: H01L21/67248 ,  H01L21/67115

Abstract: Embodiments of a semiconductor processing chamber described herein include a substrate support, a source of radiant energy opposite the substrate support, a window between the source of radiant energy and the substrate support, a detector sensitive to the radiant energy positioned to detect the radiant energy transmitted by the window, and a detector sensitive to radiation emitted by the substrate positioned to detect radiation emitted by the substrate. The chamber may also include a showerhead. The substrate support may be between the detectors and the window. A second radiant energy source may be included to project energy through the window to a detector. The second radiant energy source may also be located proximate the first radiant energy source and the detectors.

Abstract translation: 本文所述的半导体处理室的实施例包括衬底支撑件，与衬底支撑件相对的辐射能源，在辐射源源与衬底支撑件之间的窗口，对辐射能敏感的检测器，其被定位以检测发射的辐射能 以及对由被定位成检测由衬底发射的辐射的衬底发射的辐射敏感的检测器。 腔室还可以包括喷头。 衬底支撑件可以在检测器和窗口之间。 可以包括第二辐射能源以将能量通过窗口投射到检测器。 第二辐射能量源也可以位于第一辐射能源和检测器附近。

公开(公告)号：US20140263275A1

公开(公告)日：2014-09-18

申请号：US14180959

申请日：2014-02-14

Applicant: Applied Materials, Inc.

Inventor： Tuan Anh NGUYEN ,  Sanjeev BALUJA ,  Amit Kumar BANSAL ,  Juan Carlos ROCHA-ALVAREZ

IPC: H01L21/683 ,  G01K7/02

CPC classification number: G01K7/023 ,  G01K13/08 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/68792

Abstract: Embodiments of the present disclosure provide apparatus and methods for improving process uniformity. Particularly, embodiments of the present disclosure provide a rotatable temperature controlled substrate support for a semiconductor processing chamber. The rotatable temperature controlled substrate support includes one or more heating elements, one or more temperature sensors and cooling channels for circulating a cooling/heating fluid in the rotatable temperature controlled substrate support. One embodiment of the present disclosure includes a thermocouple extension assembly for extending cold junctions of the thermocouple in the substrate support away from the substrate support. The thermocouple extension assembly includes extension cords formed from materials matching with the materials of thermocouple.

Abstract translation: 本公开的实施例提供了用于改善工艺均匀性的装置和方法。 特别地，本公开的实施例为半导体处理室提供了可旋转的温度控制的衬底支撑。 可旋转温度控制的衬底支撑件包括一个或多个加热元件，一个或多个温度传感器和用于在可旋转温度受控衬底支撑件中循环冷却/加热流体的冷却通道。 本公开的一个实施例包括热电偶延伸组件，用于将衬底支撑件中的热电偶的冷接头延伸远离衬底支撑件。 热电偶延伸组件包括由与热电偶的材料匹配的材料形成的延伸线。

公开(公告)号：US20240368756A1

公开(公告)日：2024-11-07

申请号：US18744079

申请日：2024-06-14

Applicant: Applied Materials, Inc.

Inventor： Yuxing ZHANG ,  Tuan Anh (Mike) NGUYEN ,  Amit Kumar BANSAL ,  Nitin PATHAK ,  Saket RATHI ,  Thomas RUBIO ,  Udit Suryakant KOTAGI ,  Badri N. RAMAMURTHI ,  Dharma Ratnam SRICHURNAM

IPC: C23C16/44 ,  C23C16/455

Abstract: The present disclosure relates to cleaning assemblies, components thereof, and methods associated therewith for substrate processing chambers. In one example, a method includes positioning a pedestal disposed in a substrate processing chamber in a first vertical position for a first time period, directing cleaning fluid into the internal volume of the substrate processing chamber located above the faceplate, diverting a portion of the cleaning fluid to the distribution ring and into the internal volume located below the faceplate by opening up the isolation valve, and positioning the pedestal in one or more additional vertical positions while the isolation valve is opened, the one or more additional vertical positions being different than the first vertical position.

公开(公告)号：US20210217592A1

公开(公告)日：2021-07-15

申请号：US17212946

申请日：2021-03-25

Applicant: Applied Materials, Inc.

Inventor： Juan Carlos ROCHA-ALVAREZ ,  Dale R. DU BOIS ,  Amit Kumar BANSAL

IPC: H01J37/32 ,  C23C16/54 ,  C23C16/505 ,  C23C16/455 ,  C23C16/46 ,  C23C16/50

Abstract: Embodiments described herein provide an apparatus for improving deposition uniformity by improving plasma profile using a tri-cut chamber liner. The apparatus also includes a lid assembly having a split process stack for reducing downtime and a bottom heater support for more efficient heating of chamber walls.

公开(公告)号：US20210002763A1

公开(公告)日：2021-01-07

申请号：US16896982

申请日：2020-06-09

Applicant: Applied Materials, Inc.

Inventor： Nitin PATHAK ,  Amit Kumar BANSAL ,  Tuan Anh NGUYEN ,  Thomas RUBIO ,  Badri N. RAMAMURTHI ,  Juan Carlos ROCHA-ALVAREZ

IPC: C23C16/458 ,  C23C16/455

Abstract: Aspects of the present disclosure relate generally to isolator devices, components thereof, and methods associated therewith for substrate processing chambers. In one implementation, a substrate processing chamber includes an isolator ring disposed between a pedestal and a pumping liner. The isolator ring includes a first surface that faces the pedestal, the first surface being disposed at a gap from an outer circumferential surface of the pedestal. The isolator ring also includes a second surface that faces the pumping liner and a protrusion that protrudes from the first surface of the isolator ring and towards the outer circumferential surface of the pedestal. The protrusion defines a necked portion of the gap between the pedestal and the isolator ring.