公开(公告)号：US20160027614A1

公开(公告)日：2016-01-28

申请号：US14697385

申请日：2015-04-27

Applicant: Applied Materials, Inc.

Inventor： Pramit MANNA ,  Abhijit Basu MALLICK ,  Mukund SRINIVASAN ,  Rui CHENG

IPC: H01J37/32 ,  C23C16/06 ,  C23C16/26 ,  C23C16/04

CPC classification number: C23C16/26 ,  C23C16/042 ,  C23C16/06 ,  C23C16/30 ,  H01J37/32091

Abstract: Embodiments of the present disclosure relate to a metal-doped amorphous carbon hardmask for etching the underlying layer, layer stack, or structure. In one embodiment, a method of processing a substrate in a processing chamber includes exposing a substrate to a gas mixture comprising a carbon-containing precursor and a metal-containing precursor, reacting the carbon-containing precursor and the metal-containing precursor in the processing chamber to form a metal-doped carbon layer over a surface of the substrate, forming in the metal-doped carbon layer a defined pattern of through openings, and transferring the defined pattern to an underlying layer beneath the metal-doped carbon layer using the metal-doped carbon layer as a mask. An etch hardmask using the inventive metal-doped amorphous carbon film provides reduced compressive stress, high hardness, and therefore higher etch selectivity.

Abstract translation: 本公开的实施例涉及用于蚀刻下层，层叠或结构的金属掺杂非晶碳硬掩模。 在一个实施方案中，在处理室中处理衬底的方法包括将衬底暴露于包含含碳前体和含金属的前体的气体混合物中，使该含碳前体和含金属的前体在加工过程中反应 室，以在衬底的表面上形成金属掺杂碳层，在金属掺杂碳层中形成限定图形的通孔，并将定义的图案转移到金属掺杂碳层下方的下层，使用金属 掺杂碳层作为掩模。 使用本发明的金属掺杂的非晶碳膜的蚀刻硬掩模提供降低的压缩应力，高硬度，因此提高了蚀刻选择性。

公开(公告)号：US20230022359A1

公开(公告)日：2023-01-26

申请号：US17383101

申请日：2021-07-22

Applicant: Applied Materials, Inc.

Inventor： Jui-Yuan HSU ,  Pramit MANNA ,  Karthik JANAKIRAMAN

IPC: H01L21/26 ,  H01L21/02 ,  H01J37/32

Abstract: Embodiments of the present disclosure generally relate to methods, apparatus, and systems for maintaining film modulus within a predetermined modulus range. In one implementation, a method of processing substrates includes introducing one or more processing gases to a processing volume of a processing chamber, and depositing a film on a substrate supported on a substrate support disposed in the processing volume. The method includes supplying simultaneously a first radiofrequency (RF) power and a second RF power to one or more bias electrodes of the substrate support. The first RF power includes a first RF frequency and the second RF power includes a second RF frequency that is less than the first RF frequency. A modulus of the film is maintained within a predetermined modulus range.

公开(公告)号：US20230021761A1

公开(公告)日：2023-01-26

申请号：US17961224

申请日：2022-10-06

Applicant: Applied Materials, Inc.

Inventor： Eswaranand VENKATASUBRAMANIAN ,  Yang YANG ,  Pramit MANNA ,  Kartik RAMASWAMY ,  Takehito KOSHIZAWA ,  Abhijit Basu MALLICK

IPC: H01L21/02 ,  C23C16/26 ,  H01L21/033

Abstract: Embodiments herein provide methods of depositing an amorphous carbon layer using a plasma enhanced chemical vapor deposition (PECVD) process and hard masks formed therefrom. In one embodiment, a method of processing a substrate includes positioning a substrate on a substrate support, the substrate support disposed in a processing volume of a processing chamber, flowing a processing gas comprising a hydrocarbon gas and a diluent gas into the processing volume, maintaining the processing volume at a processing pressure less than about 100 mTorr, igniting and maintaining a deposition plasma of the processing gas by applying a first power to one of one or more power electrodes of the processing chamber, maintaining the substrate support at a processing temperature less than about 350° C., exposing a surface of the substrate to the deposition plasma, and depositing an amorphous carbon layer on the surface of the substrate.

公开(公告)号：US20210407791A1

公开(公告)日：2021-12-30

申请号：US17035192

申请日：2020-09-28

Applicant: Applied Materials, Inc.

Inventor： Jui-Yuan HSU ,  Pramit MANNA ,  Karthik JANAKIRAMAN

IPC: H01L21/02 ,  H01L21/033 ,  C23C16/27

Abstract: Embodiments of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the embodiments described herein provide techniques for depositing nitrogen-doped diamond-like carbon films for patterning applications. In one or more embodiments, a method for processing a substrate includes flowing a deposition gas containing a hydrocarbon compound and a nitrogen dopant compound into a processing volume of a process chamber having a substrate positioned on an electrostatic chuck, and generating a plasma at or above the substrate by applying a first RF bias to the electrostatic chuck to deposit a nitrogen-doped diamond-like carbon film on the substrate. The nitrogen-doped diamond-like carbon film has a density of greater than 1.5 g/cc and a compressive stress of about −20 MPa to less than −600 MPa.

公开(公告)号：US20210210339A1

公开(公告)日：2021-07-08

申请号：US15778167

申请日：2017-12-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Pramit MANNA ,  Rui CHENG ,  Abhijit Basu MALLICK ,  Shishi JIANG

IPC: H01L21/02

Abstract: A method for forming a conformal hermetic silicon nitride film. The method includes using thermal chemical vapor deposition with a polysilane gas to produce an ultra-conformal amorphous silicon film on a substrate, then treating the film with ammonia or nitrogen plasmas to convert the amorphous silicon film to a conformal hermetic silicon nitride. In some embodiments, the amorphous silicon deposition and the plasma treatment are performed in the same processing chamber. In some embodiments, the amorphous silicon deposition and the plasma treatment are repeated until a desired silicon nitride film thickness is reached.

公开(公告)号：US20210025058A1

公开(公告)日：2021-01-28

申请号：US17041403

申请日：2019-04-01

Applicant: Applied Materials, Inc.

Inventor： Shishi JIANG ,  Pramit MANNA ,  Abhijit Basu MALLICK ,  Suresh Chand SETH ,  Srinivas D. NEMANI

IPC: C23C16/505 ,  H01L21/3205 ,  H01L21/321 ,  H01J37/32 ,  C23C16/24 ,  C23C16/56

Abstract: Embodiments herein provide methods of plasma treating an amorphous silicon layer deposited using a flowable chemical vapor deposition (FCVD) process. In one embodiment, a method of processing a substrate includes plasma treating an amorphous silicon layer by flowing a substantially silicon-free hydrogen treatment gas into a processing volume of a processing chamber, the processing volume having the substrate disposed on a substrate support therein, forming a treatment plasma of the substantially silicon-free hydrogen treatment gas, and exposing the substrate having the amorphous silicon layer deposited on a surface thereof to the treatment plasma. Herein, the amorphous silicon layer is deposited using an FCVD process. The FCVD process includes positioning the substrate on the substrate support, flowing a processing gas into the processing volume, forming a deposition plasma of the processing gas, exposing the surface of the substrate to the deposition plasma, and depositing the amorphous silicon layer on the surface of the substrate.

公开(公告)号：US20210005500A1

公开(公告)日：2021-01-07

申请号：US16913969

申请日：2020-06-26

Applicant: Applied Materials, Inc.

Inventor： Eswaranand VENKATASUBRAMANIAN ,  Edward L. HAYWOOD ,  Samuel E. GOTTHEIM ,  Pramit MANNA ,  Kien N. CHUC ,  Adam FISCHBACH ,  Abhijit B. MALLICK ,  Timothy J. FRANKLIN

IPC: H01L21/687 ,  H01L21/67 ,  H01J37/32 ,  H01L21/3213

Abstract: Embodiments of the present disclosure generally relate to a substrate processing chamber, and components thereof, for forming semiconductor devices. The processing chamber comprises a substrate support, and an edge ring is disposed around the substrate support. The edge ring comprises a material selected from the group consisting of quartz, silicon, cross-linked polystyrene and divinylbenzene, polyether ether ketone, Al2O3, and AlN. The material of the edge ring is selected to modulate the properties of hardmask films deposited on substrates in the processing chamber. As such, hardmask films having desired film properties can be deposited in the processing chamber without scaling up the RF power to the chamber.

公开(公告)号：US20200075329A1

公开(公告)日：2020-03-05

申请号：US16679899

申请日：2019-11-11

Applicant: Applied Materials, Inc.

Inventor： Pramit MANNA ,  Shishi JIANG ,  Abhijit Basu MALLICK

IPC: H01L21/02 ,  C23C16/04 ,  H01L21/762 ,  C23C16/24 ,  C23C16/505

Abstract: Methods for gapfilling semiconductor device features, such as high aspect ratio trenches, with amorphous silicon (a-Si) film that involves pretreating the surface of the substrate to modify the underlying hydroxy-terminated silicon (Si—OH) or hydrogen-terminated silicon (Si—H) surface to oxynitride-terminated silicon (Si—ON) or nitride-terminated silicon (Si—N) and enhance the subsequent a-Si deposition are provided. First, a substrate having features formed in a first surface of the substrate is provided. The surface of the substrate is then pretreated to enhance the surface of the substrate for the flowable deposition of amorphous silicon that follows. A flowable deposition process is then performed to deposit a flowable silicon layer over the surface of the substrate. Methods described herein generally improve overall etch selectivity by the conformal silicon deposition and the flowable silicon deposition process to realize seam-free gapfilling between features with high quality amorphous silicon film.

公开(公告)号：US20190393034A1

公开(公告)日：2019-12-26

申请号：US16430136

申请日：2019-06-03

Applicant: Applied Materials, Inc.

Inventor： Eswaranand VENKATASUBRAMANIAN ,  Pramit MANNA ,  Abhijit B. MALLICK ,  Srinivas GANDIKOTA

IPC: H01L21/033 ,  H01J37/317 ,  H01L21/67 ,  H01L21/02 ,  H01L21/311

Abstract: Embodiments of the present disclosure generally relate to techniques for deposition of high-density films for patterning applications. In one embodiment, a method of processing a substrate is provided. The method includes depositing a carbon hardmask over a film stack formed on a substrate, wherein the substrate is positioned on an electrostatic chuck disposed in a process chamber, implanting ions into the carbon hardmask, wherein depositing the carbon hardmask and implanting ions into the carbon hardmask are performed in the same process chamber, and repeating depositing the carbon hardmask and implanting ions into the carbon hardmask in a cyclic fashion until a pre-determined thickness of the carbon hardmask is reached.

公开(公告)号：US20190074218A1

公开(公告)日：2019-03-07

申请号：US16184117

申请日：2018-11-08

Applicant: Applied Materials, Inc.

Inventor： Pramit MANNA ,  Rui CHENG ,  Kelvin CHAN ,  Abhijit Basu MALLICK

IPC: H01L21/768 ,  C23C16/46 ,  C23C16/34 ,  C23C16/16 ,  H01L21/285 ,  C23C16/04

Abstract: Methods for forming thin films in high aspect ratio feature definitions are provided. In one implementation, a method of processing a substrate in a process chamber is provided. The method comprises flowing a metal organic containing precursor gas comprising a ligand into an interior processing volume of a process chamber, flowing a precursor gas comprising the ligand into the processing volume and thermally decomposing the metal-containing precursor gas comprising the ligand and the precursor gas comprising the ligand in the interior processing volume to deposit a metal-containing layer over at least one or more sidewalls and a bottom surface of a feature definition in and below a surface of a dielectric layer on the substrate.