公开(公告)号：US20160086794A9

公开(公告)日：2016-03-24

申请号：US13920944

申请日：2013-06-18

Applicant: Applied Materials, Inc.

Inventor： Siu F. CHENG ,  Jacob JANZEN ,  Deenesh PADHI ,  Bok Hoen KIM

IPC: H01L21/027 ,  H01L21/3065

CPC classification number: H01L21/0273 ,  C23C16/26 ,  H01L21/02118 ,  H01L21/02274 ,  H01L21/3065

Abstract: Embodiments described herein generally relate to the fabrication of integrated circuits and more particularly to nitrogen doped amorphous carbon layers and processes for depositing nitrogen doped amorphous carbon layers on a semiconductor substrate. In one embodiment, a method of forming a nitrogen doped amorphous carbon layer on a substrate is provided. The method comprises positioning a substrate in a substrate processing chamber, introducing a nitrogen containing hydrocarbon source into the processing chamber, introducing a hydrocarbon source into the processing chamber, introducing a plasma-initiating gas into the processing chamber, generating a plasma in the processing chamber, and forming a nitrogen doped amorphous carbon layer on the substrate.

Abstract translation: 本文描述的实施例通常涉及集成电路的制造，更具体地涉及氮掺杂非晶碳层以及用于在半导体衬底上沉积氮掺杂的非晶碳层的工艺。 在一个实施例中，提供了在衬底上形成氮掺杂非晶碳层的方法。 该方法包括将基板定位在基板处理室中，将含氮烃源引入处理室，将烃源引入处理室，将等离子体起始气体引入处理室，在处理室中产生等离子体 ，并在衬底上形成氮掺杂的无定形碳层。

公开(公告)号：US20150279676A1

公开(公告)日：2015-10-01

申请号：US14736848

申请日：2015-06-11

Applicant: Applied Materials, Inc.

Inventor： Sungjin KIM ,  Deenesh PADHI ,  Sung Hyun HONG ,  Bok Hoen KIM ,  Derek R. WITTY

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/02

CPC classification number: H01L21/0337 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/0338 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/32139

Abstract: A method of forming a nitrogen-doped amorphous carbon layer on a substrate in a processing chamber is provided. The method generally includes depositing a predetermined thickness of a sacrificial dielectric layer over a substrate, forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate, depositing conformally a predetermined thickness of a nitrogen-doped amorphous carbon layer on the patterned features and the exposed upper surface of the substrate, selectively removing the nitrogen-doped amorphous carbon layer from an upper surface of the patterned features and the upper surface of the substrate using an anisotropic etching process to provide the patterned features filled within sidewall spacers formed from the nitrogen-doped amorphous carbon layer, and removing the patterned features from the substrate.

Abstract translation: 提供了一种在处理室中的衬底上形成氮掺杂非晶碳层的方法。 该方法通常包括在衬底上沉积预定厚度的牺牲电介质层，通过去除牺牲介电层的部分以暴露衬底的上表面，在衬底上形成图案化特征，共形地沉积氮掺杂的预定厚度 在图案化特征上的无定形碳层和衬底的暴露的上表面，使用各向异性蚀刻工艺从图案化特征的上表面和衬底的上表面选择性地去除氮掺杂非晶碳层，以提供图案化特征 填充在由氮掺杂非晶碳层形成的侧壁间隔物内，并且从衬底去除图案化特征。