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88 条记录 (耗时 0.022 秒)

    Method of fabricating silicon-based MEMS devices
    43.
    发明授权
    Method of fabricating silicon-based MEMS devices 有权
    制造硅基MEMS器件的方法

    公开(公告)号：US07459329B2

    公开(公告)日：2008-12-02

    申请号：US11254774

    申请日：2005-10-21

    申请人： Luc Ouellet ,  Robert Antaki

    发明人： Luc Ouellet ,  Robert Antaki

    IPC分类号： H01L21/00

    CPC分类号： B81C1/00666 ,  B81B2207/015 ,  B81C2201/0167

    摘要： A method of fabricating a silicon-based microstructure is disclosed, which involves depositing electrically conductive amorphous silicon doped with first and second dopants to produce a structure having a residual mechanical stress of less than +/=100 Mpa. The dopants can either be deposited in successive layers to produce a laminated structure with a residual mechanical stress of less than +/=100Mpa or simultaneously to produce a laminated structure having a mechanical stress of less than +/=100Mpa.

    摘要翻译： 公开了一种制造硅基微结构的方法，其包括沉积掺杂有第一和第二掺杂剂的导电非晶硅，以产生具有小于+ / = 100Mpa的残余机械应力的结构。 掺杂剂可以连续沉积以产生具有小于+ 100 = 100Mpa的残余机械应力或同时产生机械应力小于+ 100％的层压结构。

    Hermetic wafer-level packaging for MEMS devices with low-temperature metallurgy
    45.
    发明授权
    Hermetic wafer-level packaging for MEMS devices with low-temperature metallurgy 有权
    具有低温冶金的MEMS器件的密封晶圆级封装

    公开(公告)号：US07291513B2

    公开(公告)日：2007-11-06

    申请号：US11004973

    申请日：2004-12-07

    申请人： Luc Ouellet ,  Karine Turcotte

    发明人： Luc Ouellet ,  Karine Turcotte

    IPC分类号： H01L21/00

    CPC分类号： B81C1/00269 ,  B81C2203/0118 ,  B81C2203/019

    摘要： A method is disclosed for making a wafer-level package for a plurality of MEMS devices. The method involves preparing a MEMS wafer and a lid wafer, each having respective bonding structures. The lid and MEMS wafers are then bonded together through the bonding structures. The wafers are substantially free of alkali metals and/or chlorine. IN a preferred embodiment, each wafer has a seed layer, a structural underlayer and an anti-oxidation layer. A solder layer, normally formed on the lid wafer, bonds the two wafers together.

    摘要翻译： 公开了一种用于制造用于多个MEMS器件的晶片级封装的方法。 该方法包括制备各自具有各自的结合结构的MEMS晶片和盖晶片。 然后，盖和MEMS晶片通过结合结构结合在一起。 晶片基本上不含碱金属和/或氯。 在优选实施例中，每个晶片具有种子层，结构底层和抗氧化层。 通常形成在盖晶片上的焊料层将两个晶片结合在一起。

    METHOD OF FABRICATING SILICON-BASED MEMS DEVICES
    46.
    发明申请
    METHOD OF FABRICATING SILICON-BASED MEMS DEVICES 有权
    制造硅基MEMS器件的方法

    公开(公告)号：US20050233492A1

    公开(公告)日：2005-10-20

    申请号：US10459619

    申请日：2003-06-12

    申请人： Luc Ouellet ,  Robert Antaki

    发明人： Luc Ouellet ,  Robert Antaki

    IPC分类号： B81B3/00 ,  B81C1/00 ,  H01L21/00

    CPC分类号： B81C1/00666 ,  B81B2207/015 ,  B81C2201/0167

    摘要： A method of fabricating a silicon-based microstructure is disclosed, which involves depositing electrically conductive amorphous silicon doped with first and second dopants to produce a structure having a residual mechanical stress of less than +/=100 Mpa. The dopants can either be deposited in successive layers to produce a laminated structure with a residual mechanical stress of less than +/=100 Mpa or simultaneously to produce a laminated structure having a mechanical stress of less than +/=100 Mpa.

    摘要翻译： 公开了一种制造硅基微结构的方法，其包括沉积掺杂有第一和第二掺杂剂的导电非晶硅，以产生具有小于+ / = 100Mpa的残余机械应力的结构。 掺杂剂可以连续沉积以产生具有小于+ / = 100Mpa的残余机械应力或同时产生具有小于+ / = 100Mpa的机械应力的层压结构的层压结构。

    Method of making a functional device with deposited layers subject to high temperature anneal
    48.
    发明授权
    Method of making a functional device with deposited layers subject to high temperature anneal 失效
    制造具有进行高温退火的沉积层的功能器件的方法

    公开(公告)号：US06724967B2

    公开(公告)日：2004-04-20

    申请号：US09799491

    申请日：2001-03-07

    申请人： Luc Ouellet ,  Annie Dallaire

    发明人： Luc Ouellet ,  Annie Dallaire

    IPC分类号： G02B610

    CPC分类号： G02B6/132 ,  G02B2006/12169 ,  Y10S438/97 ,  Y10S438/976

    摘要： A method is disclosed for making a device having one or more deposited layers and subject to a post deposition high temperature anneal. Opposing films having similar mechanical properties are deposited on the front and back faces of a wafer, which is subsequently subjected a high temperature anneal. The opposing films tend to cancel out stress-induced warping of the wafer during the subsequent anneal.

    摘要翻译： 公开了一种用于制造具有一个或多个沉积层并经受后沉积高温退火的器件的方法。 具有相似机械性能的相反的膜沉积在晶片的正面和背面上，随后经受高温退火。 相反的电影倾向于在随后的退火期间抵消晶片的应力引起的翘曲。

    Method of aligning structures on opposite sides of a wafer
    49.
    发明授权
    Method of aligning structures on opposite sides of a wafer 有权
    对准晶片相对两侧的结构的方法

    公开(公告)号：US06555441B2

    公开(公告)日：2003-04-29

    申请号：US09923367

    申请日：2001-08-08

    申请人： Luc Ouellet

    发明人： Luc Ouellet

    IPC分类号： H01L2176

    CPC分类号： B81C99/007 ,  B81C1/00396 ,  B81C1/00404 ,  Y10S438/975

    摘要： A method is disclosed for aligning structures on first and second opposite sides of a wafer. First one or more transparent islands are formed on the first side of the wafer at an alignment location. The transparent islands have an exposed front side and a rear side embedded in the wafer. At least one alignment mark is formed on the front side of the transparent island. An anisotropic etch is performed through the second side of said the to form an opening substantially reaching the back side of the transparent island. A precise alignment is then carried out on the alignment mark through the opening and the transparent island. In this way a very precise alignment can be carried out on the back side of the wafer for manufacturing MEMS structures.

    摘要翻译： 公开了一种用于对准晶片的第一和第二相对侧上的结构的方法。 在对准位置处，在晶片的第一侧上形成第一个或多个透明岛。 透明岛具有暴露的前侧和嵌入在晶片中的后侧。 在透明岛的前侧形成至少一个对准标记。 通过所述第二侧进行各向异性蚀刻，以形成基本上到达透明岛的背面的开口。 然后通过开口和透明岛在对准标记上进行精确对准。 以这种方式，可以在用于制造MEMS结构的晶片的背面上执行非常精确的对准。

    Reactive PVD with NEG pump
    50.
    发明授权
    Reactive PVD with NEG pump 失效
    反应PVD与NEG泵

    公开(公告)号：US5778682A

    公开(公告)日：1998-07-14

    申请号：US666257

    申请日：1996-06-20

    申请人： Luc Ouellet

    发明人： Luc Ouellet

    IPC分类号： C23C14/06 ,  C23C14/56 ,  H01J7/18 ,  H01J37/18 ,  H01L21/203 ,  B01D8/00

    CPC分类号： H01J37/32834 ,  C23C14/0641 ,  C23C14/564 ,  H01J37/18 ,  H01J7/183 ,  Y10S417/901

    摘要： An apparatus for carrying out reactive physical vapor deposition on a substrate to form a nitride layer, comprises a vacuum chamber, a substrate support in the vacuum chamber, a target over the substrate support made of a refractory or noble metal, for example titanium and tantalum, a gas inlet for supplying nitrogen gas to the vacuum chamber, and a non-evaporable getter pump for serving as the primary pumping means in the vacuum chamber during the reactive physical vapor deposition of a nitride of the metal onto the substrate. The non-evaporable getter pump consists of a material insensitive to nitrogen, such as an alloy of zirconium and iron.

    摘要翻译： 用于在衬底上进行反应性物理气相沉积以形成氮化物层的装置包括真空室，真空室中的衬底支撑体，由耐火材料或贵金属制成的衬底支架上的靶，例如钛和钽 用于向真空室供应氮气的气体入口和用于在金属氮化物反应物理气相沉积到衬底上的真空室中用作初级泵送装置的非蒸发性吸气泵。 非蒸发性吸气泵由对氮气不敏感的材料组成，例如锆和铁的合金。