Abstract:
A system for separating solids from a slurry containing liquids and solids including an elongated plate having spaced apart openings therethrough, a pair of superposed endless screens supported for sliding movement on the upper surface of the plate. A pond of the slurry is formed over a portion of the run of the screens. A vacuum chamber is provided on the side of the plate opposite the side supporting the screens to draw liquid from the pond through the screens. A roll nip is provided to engage the screens to apply pressure to material on the screens at the nip. Various screen constructions and operating parameters are also disclosed.
Abstract:
A method utilizing the phenomenon of plug flow for removing solids from liquid. Liquid with suspended solids, such as paper mill effluent, is passed through a conduit under conditions of plug flow. This produces a moving plug containing the suspended particles, with the liquid along the wall of the conduit being relatively free of suspended particles. The wall is made liquid permeable, and liquid is forced through the wall as the liquid moves along the conduit. Preferably the wall is made relatively impermeable to a substantial portion of the suspended solids to assure that relatively pure liquid flows through the wall, leaving the solids concentrated in the remaining liquid flowing through the conduit. Liquid with concentrated solids is recirculated.
Abstract:
A system for use in papermaking including at least two members one of which is movable relative to the other and in frictional engagement therewith wherein at least one of the members comprises an elongated flexible composite including a plurality of ceramic segments, each segment having at least two opposite surfaces that are flat and parallel. The segments are aligned in stacked relationship with their flat faces in abutting face-to-face relation and forced toward each other in the direction of their composite length with a force which is sufficient to maintain the segments in compression when subjected to conditions of thermal change and/or flexing of the member during use. The ceramic member is provided with a smooth elongated working surface which defines an area of contact between the members of the system. Systems including a papermaking foil or suction device in a papermaking process, or a doctor blade are disclosed. A method for making the ceramic member is disclosed.
Abstract:
Fibers are air laid on a twin-wire machine to form a composite pad. A pair of endless foraminous carriers are passed through a forming chamber where fibers suspended in air are directed between the carriers. A layer of fibers is built up on each of the carriers by applying pressure differential across the carriers in the chamber to force air from the suspension through the carriers. In one form of the invention the air is directed through the respective carriers in different patterns to form a respective fiber layers of different cross section. The carriers converge within the chamber in their direction of motion to join the facing surfaces of the respective layers to form a composite pad of non-uniform cross section. According to one aspect of the invention, excess fibers are removed from the facing surfaces just prior to their being joined.
Abstract:
An expandable chuck for rotatably supporting a longitudinal roll, such as a tissue supply roll for a folding machine, having a hollow cylindrical core. Pneumatically inflatable tube members are mounted on spaced wheel members, which are in turn mounted on a cylindrical sleeve rotatably mounted on a support shaft. The tube members are pneumatically interconnected and the chuck is fully controllable from either end for insertion in or removal from the core of a roll by valve and vent means adjacent each end of the chuck.
Abstract:
Dielectric waveguide-to-transmission line transition structures are disclosed which can be used to interface low loss dielectric waveguides with integrated electric circuits for operation in millimeter wave frequency ranges on the order of 100 GHz. Numerous transition designs are presented for interfacing signal propagation in rectangular or cylindrical coplanar metallic transmission lines to signal propagation in dielectric waveguides. In one embodiment of the present invention, a transition structure is provided which includes a first transition section for interfacing a dielectric waveguide to a microstrip transmission line, and a second transition section for interfacing the microstrip transmission line to a coplanar transmission line. In other embodiments of the present invention, the dielectric waveguide interfaces directly to a coplanar transmission line. One embodiment employs a "T" junction for splitting a vertically polarized incoming signal in a dielectric waveguide into two horizontally polarized signals for propagation along a coplanar transmission line. Power splitter and polarization rotation structures are also provided in which either signals from a pair of dielectric waveguides can be combined in a single coplanar transmission line or the polarization of a signal can be changed prior to entering a transition structure.
Abstract:
This invention relates to ultra-thin semiconductor films which can be in the submicron range formed from semiconductor materials such as silicon, germanium and gallium arsenide. The films are formed by creating a thin slightly damaged surface on the polished reverse side of a film (e.g., a wafer) of the semiconductor by low dose ion implantation and then etching the semiconductor material on the front side of the film to remove the semiconductor material down to the ion implanted damaged layer. While the implanted ions can be chosen from functionally desirable ions which upon annealing remain in the film to alter the original electrical characteristics, the implanted ions can also be chosen so that upon annealing, the resultant ultra-thin semiconductor film has the same electrical characteristics as the original semiconductor material.The ion implantation changes the etching characteristics of the ion implanted layer. Thus, when the partially damaged semiconductor material is exposed to an etchant the etching rate in the damaged region is decreased by a factor of several thousand as compared to the undamaged semiconductor material.
Abstract:
A field-effect transistor (FET) and a corresponding method for its fabrication, the transistor having a source and a gate located at opposite faces of an active channel region formed in a substrate, the source being substantially shorter in effective length than the gate and located symmetrically with respect to the gate. The transistor also has two drains, located one at each end of the channel region, and charge carriers flow from the source to the drains in two paths, under control of the same gate. Electrical contact with the source is made from beneath the substrate, while contact with the gate and drains is made from above. The resulting device has a large incremental transconductance and relatively small parasitic impedances, and therefore can operate at much higher frequencies than conventional FET's.