公开(公告)号：US20020043630A1

公开(公告)日：2002-04-18

申请号：US09745174

申请日：2000-12-20

Inventor： Hamou Chakor

IPC: H01J037/08 ,  G21K005/10

CPC classification number: H01J27/22 ,  H01J2237/08 ,  H01J2237/31701 ,  H01L21/26513 ,  H01L21/2658

Abstract: A method of aluminum ion generation for an implantation in a semiconductor wafer, including using nitrogen trifluoride as a gas for ionizing a solid alumina element.

Abstract translation: 一种用于在半导体晶片中注入的铝离子生成方法，包括使用三氟化氮作为电离固体氧化铝元件的气体。

公开(公告)号：US20020033442A1

公开(公告)日：2002-03-21

申请号：US09950142

申请日：2001-09-10

Applicant: Stanley Electric Co., Ltd.

Inventor： Yasuo Toko ,  Taiju Takahashi

IPC: G21K005/10 ,  H01J037/08 ,  H01L031/00

CPC classification number: G02F1/133753 ,  G02F1/133788 ,  G02F1/29 ,  G02F2001/133757

Abstract: A photo mask including a slit-shaped light transmission section and a light source are arranged on an outside of a non-treated alignment film of which surface properties change by light radiated thereonto. With a relative positional relationship between the photo mask and the light source kept fixed, the optical alignment-treatment is conducted for the non-treated alignment film to obtain a treated alignment film to be used in a light controlling device employing a layer of liquid crystal. It is thereby possible to obtain a light controlling device of which the apparent refractive index of the liquid crystal layer is not easily influenced by a direction of incidence of light.

Abstract translation: 包含狭缝状光透射部和光源的光掩模配置在未经处理的取向膜的外侧，其表面特性通过光辐射而发生变化。 在光掩模和光源保持固定之间的相对位置关系的情况下，对未处理的取向膜进行光学取向处理，得到处理后的取向膜，用于使用液晶层的光控制装置 。 由此，可以得到不易受光入射方向影响的液晶层的表观折射率的光控制装置。

公开(公告)号：US20020030167A1

公开(公告)日：2002-03-14

申请号：US09836882

申请日：2001-04-17

Inventor： Reuel B. Liebert ,  Bjorn O. Pedersen ,  Matthew Goeckner

IPC: G21K005/10 ,  H01J037/08

CPC classification number: H01J37/32412 ,  H01J37/32935 ,  H01J2237/24405 ,  H01J2237/31703

Abstract: Plasma doping apparatus includes a plasma doping chamber, a platen mounted in the plasma doping chamber for supporting a workpiece such as a semiconductor wafer, a source of ionizable gas coupled to the chamber, an anode spaced from the platen and a pulse source for applying voltage pulses between the platen and the anode. The voltage pulses produce a plasma having a plasma sheath in the vicinity of the workpiece. The voltage pulses accelerate positive ions across the plasma sheath toward the platen for implantation into the workpiece. The plasma doping apparatus includes at least one Faraday cup positioned adjacent to the platen for collecting a sample of the positive ions accelerated across the plasma sheath. The sample is representative of the dose of positive ions implanted into the workpiece. The Faraday cup may include a multi-aperture cover for reducing the risk of discharge within the interior chamber of the Faraday cup. The Faraday cup may be configured to produce a lateral electric field within the interior chamber for suppressing escape of electrons, thereby improving measurement accuracy.

Abstract translation: 等离子体掺杂装置包括等离子体掺杂室，安装在等离子体掺杂室中的压板，用于支撑诸如半导体晶片的工件，耦合到室的可电离气体源，与压板间隔开的阳极和用于施加电压的脉冲源 压板和阳极之间的脉冲。 电压脉冲在工件附近产生具有等离子体护套的等离子体。 电压脉冲加速穿过等离子体护套的正离子朝向台板移动，以便植入工件。 等离子体掺杂装置包括至少一个位于压板附近的法拉第杯，用于收集跨越等离子体鞘加速的正离子的样品。 样品代表植入工件中的正离子剂量。 法拉第杯可以包括一个多孔盖，用于减少在法拉第杯内腔内排放的危险。 法拉第杯可以被配置为在内部室内产生横向电场，以抑制电子逸出，从而提高测量精度。

公开(公告)号：US20020014597A1

公开(公告)日：2002-02-07

申请号：US09957896

申请日：2001-09-21

Applicant: Korea Institute of Science and Technology

Inventor： Seok-Keun Koh ,  Hyung Jin Jung ,  Won Kook Choi ,  Jung Cho

IPC: G21K005/10 ,  H01J037/08

CPC classification number: H01J37/3277 ,  C23C16/4417 ,  C23C16/486 ,  D06B19/00 ,  H01J37/317 ,  H01J2237/338

Abstract: An apparatus for surface modification of a polymer, metal and ceramic material using an ion beam (IB) is disclosed, which is capable of supplying and controlling a voltage (220) applied to a material to be surface-modified so that an ion beam (IB) energy irradiated to the material is controlled, differentiating the degree of the vacuum of a reaction gas in a portion of a vacuum chamber in which the ion beam is irradiated from that in a portion in which the ion beam is generated, and also being applicable for both-side irradiating processing and continuous processing.

Abstract translation: 公开了一种使用离子束（IB）对聚合物，金属和陶瓷材料进行表面改性的装置，其能够提供和控制施加到待表面改性的材料上的电压（220），使得离子束 IB）照射到材料上的能量被控制，区分离子束被照射的真空室的一部分中的反应气体的真空度与产生离子束的部分的反应气体的真空度，并且也是 适用于双面照射处理和连续加工。

公开(公告)号：US20020003208A1

公开(公告)日：2002-01-10

申请号：US09083706

申请日：1998-05-22

Inventor： VADIM G. DUDNIKOV

IPC: H01S001/00 ,  H01S003/00 ,  H05H003/02 ,  G21K005/10 ,  H01J037/08

CPC classification number: G21K1/14 ,  H01J37/3002 ,  H01J2237/0041 ,  H01J2237/31701

Abstract: A device is provided for treating a workpiece with positively charged ions. The device includes an apparatus including an ion source for producing a positive ion beam and directing the positive ion beam toward a surface of a work piece. The device further includes a source for introducing negative ions into the beam path in at least one selected region downstream of the ion source.

Abstract translation: 提供一种用于用带正电荷的离子处理工件的装置。 该装置包括一种包括用于产生正离子束并将正离子束朝向工件表面引导的离子源的装置。 该装置还包括用于在离子源的下游的至少一个选定区域中将负离子引入光束路径的源。

公开(公告)号：US20040212288A1

公开(公告)日：2004-10-28

申请号：US10855245

申请日：2004-05-27

Inventor： Viktor Kanarov ,  Alan V. Hayes ,  Rustam Yevtukhov ,  Daniel Yakovlevitch

IPC: H05H001/00 ,  H01J037/08

CPC classification number: H01J27/024 ,  H01J27/022 ,  H01J37/08 ,  H01J37/3053 ,  H01J2237/061 ,  H01J2237/3151

Abstract: A charged particle apparatus, with multiple electrically conducting semispheric grid electrodes, the grid electrodes mounted in a dielectric mounting ring, with hidden areas or regions to maintain electrical isolation between the grid electrodes as sputter deposits form on the grid electrodes and mounting ring. The grid electrodes are mounted to the mounting ring with slots and fastening pins that allow sliding thermal expansion and contraction between the grid electrodes and mounting ring while substantially maintaining alignment of grid openings and spacing between the grid electrodes. Asymmetric fastening pins facilitate the sliding thermal expansion while restraining the grid electrodes. Electrical contactors supply and maintain electrical potentials of the grid electrodes with spring loaded sliding contacts, without substantially affecting the thermal characteristics of the grid electrodes.

公开(公告)号：US20040144932A1

公开(公告)日：2004-07-29

申请号：US10703165

申请日：2003-11-07

Inventor： Adrian Murrell ,  Peter Michael Banks ,  Andrew Allen ,  Neil L. Clarke ,  Matthew Peter Dobson

IPC: H01J037/08

CPC classification number: H01J37/08 ,  H01J37/3171

Abstract: The invention relates to an ion source for an ion implanter in which source material for providing desired ions is provided in the form of a plate or liner which can be fitted into the reactant chamber of the ion source.

公开(公告)号：US20040119028A1

公开(公告)日：2004-06-24

申请号：US10326297

申请日：2002-12-19

Applicant: 3M Innovative Properties Company

Inventor： Fred Boyle McCormick ,  Robert Charles Fitzer ,  Hung Thien Tran

IPC: G21K005/10 ,  H01J037/08

CPC classification number: H01L27/3239 ,  H01L27/3281 ,  H01L51/0015 ,  H01L51/5036 ,  H01L51/5246 ,  H01L51/5262 ,  H01L2251/5346

Abstract: Disclosed herein are methods of laser patterning organic light emitting diodes by permanently changing the light emissivity of the diodes.

Abstract translation: 这里公开的是通过永久地改变二极管的光发射率来激发有机发光二极管图案的方法。

公开(公告)号：US20040061079A1

公开(公告)日：2004-04-01

申请号：US09739670

申请日：2000-12-20

Inventor： Justin Thompson ,  Olivier Schuepbach

IPC: H01J037/08 ,  G21K005/10

CPC classification number: C03C25/12 ,  B29C35/10 ,  B29C2035/0827 ,  H01J65/044

Abstract: The present invention is an apparatus for curing an article that is passing through the apparatus, wherein the article is being cured by ultraviolet radiation curing. The present invention most commonly applies to the field of fiber optics, and the manufacture of optical fibers and fiber optic cables or ribbons. The present invention comprises a hollow tubular UV light emitting device (bulb) and a UV transparent tube where the bulb is disposed around the tube creating a space between the tube and the bulb. The article to be cured passes through the center of the tube along with an inert gas, where the inert gas is either cooled or heated depending on the application of the apparatus. A UV transparent cooling medium is passed through the space between the tube and the bulb to provide cooling for the apparatus, preventing heat damage from the bulb. Shielding coatings are employed on either the surface of the tube or the inner surface of the bulb to prevent harmful and unwanted radiation from the bulb from reaching the article to be cured. Further, a dichroic reflector is employed outside of the bulb to reflect UV radiation back into the bulb while allowing other radiation emitted by the bulb to escape, while the exterior of the bulb is being cooled by an additional cooling medium passing over the exterior of the bulb. The present invention greatly improves temperature control and operational efficiency of the UV curing process over prior art devices.

Abstract translation: 本发明是一种用于固化穿过该装置的制品的装置，其中通过紫外线辐射固化使制品固化。 本发明最普遍地应用于光纤领域以及光纤和光纤电缆或带的制造。 本发明包括中空管状UV发光器件（灯泡）和UV透明管，其中灯泡设置在管周围，在管和灯泡之间形成空间。 待固化的制品与惰性气体一起穿过管的中心，根据设备的应用，惰性气体被冷却或加热。 UV透明冷却介质通过管和灯泡之间的空间，为设备提供冷却，防止来自灯泡的热损坏。 在管的表面或灯泡的内表面上使用屏蔽涂层，以防止来自灯泡的有害和不期望的辐射到达待固化的物品。 此外，在灯泡外部使用二向色反射器以将UV辐射反射回灯泡，同时允许由灯泡发射的其它辐射逸出，同时灯泡的外部被另外的冷却介质冷却通过外部的 灯泡。 本发明大大提高了UV固化工艺的温度控制和操作效率。

公开(公告)号：US20040038539A1

公开(公告)日：2004-02-26

申请号：US10636525

申请日：2003-08-08

Inventor： Richard D. Holscher

IPC: H01L021/311 ,  G21K005/10 ,  H01J037/08 ,  H01L023/58

CPC classification number: H01L21/76808 ,  H01L21/31144 ,  Y10S438/942

Abstract: An apparatus, system and method for fabricating a wafer utilizing a dual damascene process are described. A wafer-in-process, having conductive plugs within a first dielectric layer, a hard mask over the first dielectric layer, vias in a second dielectric layer which overlies the hard mask, and a photoresist material within the vias is further processed by a photolithographic device having transparent portions and radiant energy inhibiting portions. The photolithographic device is registered to the wafer-in-process to prevent radiant energy from being directly transmitted into the photoresist material overlaying the vias. This prevents the exposure of a portion of the photoresist material at a lower portion of the vias, thus protecting the hard mask layer and/or the conductive plugs from damage during a subsequent etching process. The exposed photoresist material is then removed.

Abstract translation: 描述了利用双镶嵌工艺制造晶片的装置，系统和方法。 具有在第一电介质层内的导电插塞，第一介电层上的硬掩模，覆盖在硬掩模上的第二电介质层中的通孔和通孔内的光致抗蚀剂材料的晶片在工艺中进一步通过光刻 具有透明部分和辐射能量抑制部分的装置。 光刻设备被注册到处理中的晶片，以防止辐射能直接传输到覆盖通孔的光致抗蚀剂材料中。 这防止在通孔的下部暴露一部分光致抗蚀剂材料，从而在随后的蚀刻工艺期间保护硬掩模层和/或导电塞不被损坏。 然后去除曝光的光致抗蚀剂材料。