Oilfield thread makeup and breakout verification system and method
    31.
    发明申请
    Oilfield thread makeup and breakout verification system and method 有权
    油田螺纹化妆和爆破验证系统及方法

    公开(公告)号:US20040223533A1

    公开(公告)日:2004-11-11

    申请号:US10836785

    申请日:2004-04-30

    Abstract: The thread engagement verifier system provides for verifying the quality of a threaded connection 12 between upper and lower for tubular member 16, 18. One or more thermal radiation sensors 14 are used in combination with a data acquisition and processing computer 20 and an output device, such as a video display 12. The thermal radiation is generated by sliding friction between the tubular members, and the sensors 14 sense radiation at a plurality of external locations and output heat intensity signals to the computer 20. Torque may also be sensed via a sensor 32 and input to the computer 20.

    Abstract translation: 螺纹接合校验器系统提供用于验证用于管状构件16,18的上部和下部之间的螺纹连接件12的质量。一个或多个热辐射传感器14与数据采集和处理计算机20和输出装置结合使用, 例如视频显示器12.热辐射是通过管状构件之间的滑动摩擦而产生的,并且传感器14感测多个外部位置处的辐射,并将热强度信号输出到计算机20.转矩也可以通过传感器 32并输入到计算机20。

    Method and apparatus for temperature sensing utilizing optical fiber
    32.
    发明申请
    Method and apparatus for temperature sensing utilizing optical fiber 失效
    利用光纤进行温度感测的方法和装置

    公开(公告)号:US20040190588A1

    公开(公告)日:2004-09-30

    申请号:US10397754

    申请日:2003-03-26

    CPC classification number: G01J5/58 G01J5/08 G01J5/0821 G01K11/32 G01K2011/322

    Abstract: A method and apparatus for sensing temperature using optical fiber is provided. In one embodiment, a method for sensing temperature using optical fiber includes launching a polarized optical signal having sufficient intensity to produce Brillouin scattering of the signal into a polarization maintaining optical fiber, receiving a first signal reflected from the launched signal, receiving a second signal reflected from the launched signal; and resolving a metric indicative of temperature from the first and second received signals. The method is particularly useful for sensing temperature in hazardous locations such as down hole gas and oil field applications or other applications where minimization of strain effects to signal transmission is desired.

    Abstract translation: 提供了一种使用光纤检测温度的方法和装置。 在一个实施例中,使用光纤检测温度的方法包括发射具有足够强度的偏振光信号以产生信号到保偏光纤的布里渊散射,接收从发射信号反射的第一信号,接收反射的第二信号 从发射信号; 以及从所述第一和第二接收信号解析指示温度的度量。 该方法特别适用于在诸如井下气体和油田应用等危险场所的感测温度或其他需要最小化对信号传输的应变效应的应用中。

    Apparatus and method for measuring temperature of molten metal
    33.
    发明申请
    Apparatus and method for measuring temperature of molten metal 有权
    用于测量熔融金属温度的装置和方法

    公开(公告)号:US20040174922A1

    公开(公告)日:2004-09-09

    申请号:US10485099

    申请日:2004-01-27

    Abstract: The invention provides a cooling system for protecting an image fiber and an imaging device from thermal influences and a temperature measurement apparatus, for a molten metal, capable of being easily controlled and stably measuring the temperature. The temperature measurement apparatus for a molten metal comprises four connectable portions of a nozzle portion a purge/cooling gas introduction portion, an image fiber fitting portion with a window glass and an image fiber to a double pipe nozzle protection tube. A distance from a nozzle distal end as an introduction portion of thermal radiation light to a light reception portion at an image fiber distal end becomes short so that a greater amount of thermal radiation light can be received.

    Abstract translation: 本发明提供了一种用于保护图像光纤和成像装置免受热影响的冷却系统和用于熔融金属的温度测量装置,其能够容易地控制和稳定地测量温度。 熔融金属的温度测量装置包括喷嘴部分,吹扫/冷却气体导入部分,具有窗玻璃的图像纤维配合部分和图像光纤到双管喷嘴保护管的四个可连接部分。 从作为热辐射光的导入部的喷嘴前端到图像光纤远端的光接收部的距离变短,能够接收到更大量的热辐射光。

    Method for making an infrared detector and infrared detector
    34.
    发明申请
    Method for making an infrared detector and infrared detector 有权
    制作红外探测器和红外探测器的方法

    公开(公告)号:US20040113076A1

    公开(公告)日:2004-06-17

    申请号:US10658042

    申请日:2003-09-09

    Abstract: A detector including a base having a recess formed therein and a diaphragm generally extending across the recess. The detector further includes an infrared sensitive component or a piezoelectric or piezoresistive element located on, above or supported by the diaphragm. The diaphragm includes a material which is generally resistant to liquid chemical etchants and which has a thermal conductivity of less than about 0.005 Wcmnull1Knull1.

    Abstract translation: 一种检测器,包括具有形成在其中的凹部的基部和通常延伸穿过凹部的隔膜。 检测器还包括位于隔膜上方或由隔膜支撑的红外敏感元件或压电或压阻元件。 隔膜包括通常耐液体化学蚀刻剂并且具有小于约0.005Wcm -1 K -1的热导率的材料。

    Universal EUV in-band intensity detector

    公开(公告)号:US20040099808A1

    公开(公告)日:2004-05-27

    申请号:US10301080

    申请日:2002-11-21

    Inventor: Kurt W. Berger

    CPC classification number: G01J1/429 G21K1/06

    Abstract: Extreme ultraviolet light is detected using a universal in-band detector for detecting extreme ultraviolet radiation that includes: (a) an EUV sensitive photodiode having a diode active area that generates a current responsive to EUV radiation; (b) one or more mirrors that reflects EUV radiation having a defined wavelength(s) to the diode active area; and (c) a mask defining a pinhole that is positioned above the diode active area, wherein EUV radiation passing through the pinhole is restricted substantially to illuminating the diode active area.

    Method for predicting temperature, test wafer for use in temperature prediction, and method for evaluating lamp heating system

    公开(公告)号:US20040047394A1

    公开(公告)日:2004-03-11

    申请号:US10638062

    申请日:2003-08-11

    CPC classification number: G01K11/00

    Abstract: A test wafer for use in wafer temperature prediction is prepared. The test wafer includes: first semiconductor layer formed in a crystalline state; second semiconductor layer formed in an amorphous state on the first semiconductor layer; and light absorption film formed over the second semiconductor layer. Next, the test wafer is loaded into a lamp heating system and then irradiating the test wafer with a light emitted from the lamp, thereby heating the second semiconductor layer through the light absorption film. Thereafter, a recovery rate, at which a part of the second semiconductor layer recovers from the amorphous state to the crystalline state at the interface with the first semiconductor layer, is calculated. Then, a temperature of the test wafer that has been irradiated with the light is measured according to a relationship between the recovery rate and a temperature corresponding to the recovery rate.

    Temperature measuring method, heat treating device and method, computer program, and radiation thermometer
    37.
    发明申请
    Temperature measuring method, heat treating device and method, computer program, and radiation thermometer 失效
    温度测量方法,热处理装置和方法,计算机程序和辐射温度计

    公开(公告)号:US20040004989A1

    公开(公告)日:2004-01-08

    申请号:US10399758

    申请日:2003-04-22

    Inventor: Takashi Shigeoka

    Abstract: A method of temperature measurement for measuring a temperature of an object to be measured that is heated by a heating source in a multiplex-reflection environment by using two radiation thermometers provided at a measurement part separated from the object to be measured is provided. In the method, two of the radiation thermometers have a rod that is embedded in the measurement part and can receive radiation light from the object to be measured, and an optical fiber connected to the rod; numerical apertures of the radiation thermometers are different; the multiplex-reflection environment is formed between a surface of the measurement part facing the object to be measured and the measurement part; a radiation rate null of the object to be measured based on a result of a measurement of two of the thermometers and the temperature of the object to be measured is calculated by the following equations nullnull1null(1nullNAnullN1)N2/(D1/D2) nulleffnull(1nullnull)nullnullnullnullnullnull/null1nullFnullrnull(1nullnull)nullwherein D1 represents a diameter of the rod of the radiation thermometers, NA represents the numerical aperture, D2 represents a distance between the object to be measured and the surface of the measurement part, r represents a reflectivity of the surface of the measurement part, F represents a view factor, null represents a multiplex reflection coefficient, nulleff represents an effective radiation rate of the object to be measured, and N1 and N2 are parameters.

    Abstract translation: 提供一种温度测量方法,用于通过使用设置在与待测量物体分离的测量部分处的两个辐射温度计来测量在多重反射环境中由加热源加热的待测物体的温度。 在该方法中,辐射温度计中的两个具有嵌入测量部分中的杆,并且可以接收来自被测量物体的辐射光和连接到杆的光纤; 辐射温度计的数值孔径不同; 所述多重反射环境形成在所述测量部件的面向被测量物体的表面与所述测量部件之间; 通过以下等式计算基于两个温度计的测量结果和待测量物体的温度的被测量物体的辐射速率ε:α= 1-(1-NA.N1) epsiloneff =(1-α).epsilon + alpha.epsilon / {1-Fr(1-epsilon)}其中D1表示辐射温度计的棒的直径,NA表示数值孔径, D2表示测量对象与测量部的表面之间的距离,r表示测量部的表面的反射率,F表示视点因子,á表示多重反射系数,å表示有效辐射率 要测量的对象,N1和N2是参数。

    Temperature distribution measuring method and apparatus
    38.
    发明申请
    Temperature distribution measuring method and apparatus 失效
    温度分布测量方法及装置

    公开(公告)号:US20040001525A1

    公开(公告)日:2004-01-01

    申请号:US10184957

    申请日:2002-07-01

    CPC classification number: G01J5/0003 G01J5/602

    Abstract: Method and apparatus for measuring a surface temperature of an object body, by calculating a temperature at each picture element of an image of the object body, on the basis of a radiant intensity ratio at each pair of corresponding picture elements of a first and a second image which are obtained with respective radiations having respective first and second wavelengths which are selected from a light emitted from the surface of the body, by a first filter which permits transmission therethrough a radiation having the first wavelength which is selected according to a radiant-intensity curve corresponding to a wavelength of a black body at a lower limit of a temperature measurement range, and which is within a high radiant-intensity range in which the radiant intensity is higher than a radiant intensity at a normal room temperature, and a second filter which permits transmission therethrough a radiation having the second wavelength which is selected within the high radiant-intensity range, such that the second wavelength is different from the first wavelength by a predetermined difference which is not larger than {fraction (1/12)} of the first wavelength and which is not smaller than a sum of half widths of the first and second wavelengths.

    Abstract translation: 基于第一和第二对象的每对相应图像元素的辐射强度比,通过计算物体的图像的每个像素的温度来测量物体的表面温度的方法和装置 图像,其通过具有第一和第二波长的各自的辐射而获得,所述第一和第二波长从从所述主体的表面发射的光中选择,所述第一滤光器允许透射通过所述第一波长的辐射,所述辐射根据辐射强度 对应于在温度测量范围的下限处的黑体的波长的曲线,并且其处于辐射强度高于正常室温下的辐射强度的高辐射强度范围内;以及第二滤波器 其允许通过其中在高辐射强度运行中选择的具有第二波长的辐射 使得第二波长与第一波长不同的预定差异不大于{分数(第一波长的1/12,并且不小于第一和第二波长的半宽度的总和)。

    Temperature-measuring device
    39.
    发明申请
    Temperature-measuring device 审中-公开
    温度测量装置

    公开(公告)号:US20030231694A1

    公开(公告)日:2003-12-18

    申请号:US10394206

    申请日:2003-03-24

    Inventor: Akihiro Ohsawa

    Abstract: At the time when a temperature of a semiconductor wafer or the like is measured by light without contacting to it, its temperature is measured with high precision without suffering from an influence of changes in temperature of a light source, an influence of a bent degree or the like of an optical fiber or an influence of a displacement of an optical system such as a lens or the like. Light output from the light source is irradiated to the semiconductor wafer through an optical fiber for irradiated light. The light reflected from the semiconductor wafer is output as reflected light through an optical fiber for the reflected light. An optical fiber for reference light having substantially the same route as those of the optical fiber for irradiated light and the optical fiber for reflected light is disposed. The light output from the light source is output as the reference light through the optical fiber for reference light without being irradiated to or reflected from the semiconductor wafer. And, a temperature of the semiconductor wafer is measured according to the reflected light output from the optical fiber for reflected light and the reference light output from the optical fiber for reference light.

    Abstract translation: 当半导体晶片等的温度通过光而不与其接触时,其温度以高精度测量,而不受光源温度变化的影响,弯曲度的影响或 光纤的类似物或诸如透镜等的光学系统的位移的影响。 从光源输出的光通过用于照射光的光纤照射到半导体晶片。 从半导体晶片反射的光作为反射光通过反射光的光纤输出。 布置具有与用于照射光的光纤基本相同的路径的参考光的光纤和用于反射光的光纤。 从光源输出的光作为参考光通过用于参考光的光纤输出,而不照射或从半导体晶片反射。 并且,根据从用于反射光的光纤的反射光和从用于参考光的光纤输出的参考光来测量半导体晶片的温度。

    Color corrected laser illumination system for night vision applications
    40.
    发明申请
    Color corrected laser illumination system for night vision applications 有权
    用于夜视应用的彩色校正激光照明系统

    公开(公告)号:US20030230715A1

    公开(公告)日:2003-12-18

    申请号:US10064116

    申请日:2002-06-12

    CPC classification number: G02B27/1086 G02B23/12

    Abstract: A lighting system for night vision applications including a near infrared light source, a visible light source, a beamsplitter and an optical element. The beamsplitter is arranged to reflect light emitting from either the near infrared light source or the visible light source and transmit light emitting from the other of the near infrared light source or visible light source so as to produce a color-corrected light source. The optical element is disposed a predetermined distance from the color-corrected light source. The optical element includes an input surface for receiving light from the color-corrected light source and an output surface for emitting the received light in a desired emission pattern. In one embodiment, each of the near infrared light source and visible light source is associated with respective first and second optical elements. The first and second optical elements are arranged such that the emission patterns of each optical element are substantially identical and overlapping to form a single color-corrected light emission pattern.

    Abstract translation: 一种用于夜视应用的照明系统,包括近红外光源,可见光源,分束器和光学元件。 分束器被配置为反射从近红外光源或可见光源发射的光,并且发射从近红外光源或可见光源中的另一个发射的光,以便产生色彩校正的光源。 光学元件设置在距色彩校正光源预定距离处。 光学元件包括用于接收来自颜色校正的光源的光的输入表面和用于以期望的发射图案发射接收的光的输出表面。 在一个实施例中,近红外光源和可见光源中的每一个与相应的第一和第二光学元件相关联。 第一和第二光学元件布置成使得每个光学元件的发射图案基本上相同并重叠以形成单个颜色校正的发光图案。

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