公开(公告)号：US10467133B2

公开(公告)日：2019-11-05

申请号：US15064185

申请日：2016-03-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Amitai Perlstein ,  Eun Chu Oh ,  Amir Bennatan ,  Junjin Kong ,  Hong Rak Son

IPC: G06F12/02

Abstract: A storage device is provided as follows. A nonvolatile memory device includes blocks, each block having sub-blocks erased independently. A memory controller performs a garbage collection operation on the nonvolatile memory device by selecting a garbage collection victim sub-block among the sub-blocks and erasing the selected garbage collection victim sub-block to generate a free sub-block. The memory controller selects the garbage collection victim sub-block using valid page information of each sub-block and valid page information of memory cells adjacent to each sub-block.

公开(公告)号：US09881671B2

公开(公告)日：2018-01-30

申请号：US15044301

申请日：2016-02-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Chu Oh ,  Young-Geon Yoo ,  Jun Jin Kong ,  Hong-Rak Son ,  Han-Shin Shin

IPC: G11C13/00 ,  G11C11/16 ,  G11C11/56 ,  G06F11/10

CPC classification number: G11C13/004 ,  G06F11/1048 ,  G11C11/1655 ,  G11C11/1673 ,  G11C11/5607 ,  G11C11/5657 ,  G11C11/5664 ,  G11C11/5678 ,  G11C11/5685 ,  G11C13/0026 ,  G11C13/0069 ,  G11C2013/0054 ,  G11C2213/72

Abstract: A method is for operating a resistive memory system including a resistive memory device implemented as multi-level memory cells. The method includes setting levels of reference voltages used to determine resistance states of the multi-level memory cells, and reading data of the multi-level memory cells based on the reference voltages. A difference between the reference voltages used to determine a relatively high resistance state is greater than a difference between the reference voltages used to determine a relatively low resistance state.