Transparent display device and method of manufacturing transparent display devices

    公开(公告)号:US11152439B2

    公开(公告)日:2021-10-19

    申请号:US16419881

    申请日:2019-05-22

    Abstract: A transparent display substrate, a transparent display device, and a method of manufacturing a transparent display device, the substrate including a base substrate including a pixel area and a transmission area; a pixel circuit on the pixel area of the base substrate; an insulation layer covering the pixel circuit on the base substrate; a pixel electrode selectively disposed on the pixel area of the base substrate, the pixel electrode being electrically connected to the pixel circuit at least partially through the insulation layer; and a transmitting layer structure selectively disposed on the transmission area of the base substrate, the transmitting layer structure including at least an inorganic material, the inorganic material consisting essentially of silicon oxynitride.

    Organic light emitting display panel

    公开(公告)号:US11017707B2

    公开(公告)日:2021-05-25

    申请号:US16719380

    申请日:2019-12-18

    Abstract: An OLED panel may include a substrate including a first region and a second region disposed along a first direction. A plurality of first pixels are disposed in the first region on the substrate, the first pixels each having a first area, the first pixels each comprising a first unit pixel, a second unit pixel disposed along a second direction from the first unit pixel, and a transmission portion disposed along the first direction from the first unit pixel and the second unit pixel. A plurality of second pixels are disposed in the second region on the substrate, the second pixels each having a second area less than the first area, the second pixels each comprising a third unit pixel. The first unit pixel, the second unit pixel, and the third unit pixel may have substantially the same shape as each other.

    Display device
    33.
    发明授权

    公开(公告)号:US10739659B2

    公开(公告)日:2020-08-11

    申请号:US15706473

    申请日:2017-09-15

    Abstract: A display device may include a first substrate, an encapsulation substrate overlapping the substrate, a display unit disposed between the first substrate and the encapsulation substrate, a first electrode disposed between the display unit and the encapsulation substrate and having a first reflectance, a second electrode overlapping the first electrode and having a second reflectance greater than the first reflectance, and an electrochromic unit disposed between the first electrode and the second electrode.

    Organic light emitting display panel

    公开(公告)号:US10529269B2

    公开(公告)日:2020-01-07

    申请号:US16504138

    申请日:2019-07-05

    Abstract: An OLED panel may include a substrate including a first region and a second region disposed along a first direction. A plurality of first pixels are disposed in the first region on the substrate, the first pixels each having a first area, the first pixels each comprising a first unit pixel, a second unit pixel disposed along a second direction from the first unit pixel, and a transmission portion disposed along the first direction from the first unit pixel and the second unit pixel. A plurality of second pixels are disposed in the second region on the substrate, the second pixels each having a second area less than the first area, the second pixels each comprising a third unit pixel. The first unit pixel, the second unit pixel, and the third unit pixel may have substantially the same shape as each other.

    Display device
    36.
    发明授权

    公开(公告)号:US10418431B2

    公开(公告)日:2019-09-17

    申请号:US15416653

    申请日:2017-01-26

    Abstract: A display device may include a light emitting element, a buffer layer, a gate insulation layer, and a switching element. A refractive index of the gate insulation layer may be equal to a refractive index of the buffer layer. The switching element may be electrically connected to the light emitting element and may include an active layer and a gate electrode. The active layer may be positioned between the buffer layer and the gate insulation layer and may directly contact at least one of the buffer layer and the gate insulation layer. The gate insulation layer may be positioned between the active layer and the gate electrode and may directly contact at least one of the active layer and the gate electrode.

    Organic light emitting display panel

    公开(公告)号:US10347165B2

    公开(公告)日:2019-07-09

    申请号:US15640877

    申请日:2017-07-03

    Abstract: An OLED panel may include a substrate including a first region and a second region disposed along a first direction. A plurality of first pixels are disposed in the first region on the substrate, the first pixels each having a first area, the first pixels each comprising a first unit pixel, a second unit pixel disposed along a second direction from the first unit pixel, and a transmission portion disposed along the first direction from the first unit pixel and the second unit pixel. A plurality of second pixels are disposed in the second region on the substrate, the second pixels each having a second area less than the first area, the second pixels each comprising a third unit pixel. The first unit pixel, the second unit pixel, and the third unit pixel may have substantially the same shape as each other.

    THIN FILM TRANSISTOR AND METHOD FOR FABRICATING THE SAME
    40.
    发明申请
    THIN FILM TRANSISTOR AND METHOD FOR FABRICATING THE SAME 有权
    薄膜晶体管及其制造方法

    公开(公告)号:US20150243793A1

    公开(公告)日:2015-08-27

    申请号:US14620907

    申请日:2015-02-12

    Abstract: A thin film transistor includes a gate electrode, a gate insulating layer, an oxide semiconductor layer, an oxide buffer layer, a protective layer, and source and drain electrodes. The gate electrode is formed on a substrate. The gate insulating layer is formed on the substrate. The oxide semiconductor layer is formed on the gate insulating layer and includes a source, a channel and a drain region. The oxide buffer layer is formed on the oxide semiconductor layer, and has a carrier concentration lower than that of the oxide semiconductor layer. The protective layer is formed on the oxide buffer layer and the gate insulating layer, and has contact holes formed therein so that the oxide buffer layer in the source and drain regions are exposed therethrough. The source and drain electrodes are coupled with the oxide buffer layer in the source and drain regions through the contact holes.

    Abstract translation: 薄膜晶体管包括栅电极,栅极绝缘层,氧化物半导体层,氧化物缓冲层,保护层以及源极和漏极。 栅电极形成在基板上。 栅极绝缘层形成在基板上。 氧化物半导体层形成在栅极绝缘层上并且包括源极,沟道和漏极区。 氧化物缓冲层形成在氧化物半导体层上,其载流子浓度低于氧化物半导体层的载流子浓度。 保护层形成在氧化物缓冲层和栅极绝缘层上,并且在其中形成有接触孔,使得源极和漏极区域中的氧化物缓冲层暴露在其中。 源电极和漏电极通过接触孔与源区和漏区中的氧化物缓冲层耦合。

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