Abstract:
A transparent display substrate, a transparent display device, and a method of manufacturing a transparent display device, the substrate including a base substrate including a pixel area and a transmission area; a pixel circuit on the pixel area of the base substrate; an insulation layer covering the pixel circuit on the base substrate; a pixel electrode selectively disposed on the pixel area of the base substrate, the pixel electrode being electrically connected to the pixel circuit at least partially through the insulation layer; and a transmitting layer structure selectively disposed on the transmission area of the base substrate, the transmitting layer structure including at least an inorganic material, the inorganic material consisting essentially of silicon oxynitride.
Abstract:
An OLED panel may include a substrate including a first region and a second region disposed along a first direction. A plurality of first pixels are disposed in the first region on the substrate, the first pixels each having a first area, the first pixels each comprising a first unit pixel, a second unit pixel disposed along a second direction from the first unit pixel, and a transmission portion disposed along the first direction from the first unit pixel and the second unit pixel. A plurality of second pixels are disposed in the second region on the substrate, the second pixels each having a second area less than the first area, the second pixels each comprising a third unit pixel. The first unit pixel, the second unit pixel, and the third unit pixel may have substantially the same shape as each other.
Abstract:
A display device may include a first substrate, an encapsulation substrate overlapping the substrate, a display unit disposed between the first substrate and the encapsulation substrate, a first electrode disposed between the display unit and the encapsulation substrate and having a first reflectance, a second electrode overlapping the first electrode and having a second reflectance greater than the first reflectance, and an electrochromic unit disposed between the first electrode and the second electrode.
Abstract:
An OLED panel may include a substrate including a first region and a second region disposed along a first direction. A plurality of first pixels are disposed in the first region on the substrate, the first pixels each having a first area, the first pixels each comprising a first unit pixel, a second unit pixel disposed along a second direction from the first unit pixel, and a transmission portion disposed along the first direction from the first unit pixel and the second unit pixel. A plurality of second pixels are disposed in the second region on the substrate, the second pixels each having a second area less than the first area, the second pixels each comprising a third unit pixel. The first unit pixel, the second unit pixel, and the third unit pixel may have substantially the same shape as each other.
Abstract:
A transparent organic light emitting display device may include a transparent base substrate, a semiconductor device disposed on the transparent base substrate, a display structure electrically connected to the semiconductor device, and a protection layer including a blue dye disposed on the display structure. The protection layer may improve the transparency of the transparent base substrate by calibrating discoloration of the transparent base substrate. Thus, the transparent display device including the protection layer may ensure an enhanced transparency. Further, the transparent display device may have an enhanced mechanical strength and an increased heat resistance because of the transparent base substrate.
Abstract:
A display device may include a light emitting element, a buffer layer, a gate insulation layer, and a switching element. A refractive index of the gate insulation layer may be equal to a refractive index of the buffer layer. The switching element may be electrically connected to the light emitting element and may include an active layer and a gate electrode. The active layer may be positioned between the buffer layer and the gate insulation layer and may directly contact at least one of the buffer layer and the gate insulation layer. The gate insulation layer may be positioned between the active layer and the gate electrode and may directly contact at least one of the active layer and the gate electrode.
Abstract:
An OLED panel may include a substrate including a first region and a second region disposed along a first direction. A plurality of first pixels are disposed in the first region on the substrate, the first pixels each having a first area, the first pixels each comprising a first unit pixel, a second unit pixel disposed along a second direction from the first unit pixel, and a transmission portion disposed along the first direction from the first unit pixel and the second unit pixel. A plurality of second pixels are disposed in the second region on the substrate, the second pixels each having a second area less than the first area, the second pixels each comprising a third unit pixel. The first unit pixel, the second unit pixel, and the third unit pixel may have substantially the same shape as each other.
Abstract:
A display device may include a first substrate, a lower barrier layer disposed on a rear surface of the first substrate, an upper barrier layer disposed on a front surface of the first substrate, a display structure disposed on the upper barrier layer, and a second substrate disposed on the display structure.
Abstract:
An organic light emitting display includes a pixel circuit to supply current to an organic light emitting device. The pixel circuit includes a switching transistor and a driving transistor. The switching transistor includes a first insulating layer between a first gate electrode and an oxide semiconductor layer. The driving transistor includes a second gate electrode on an active layer. The first insulating layer is between the active layer and the second gate electrode.
Abstract:
A thin film transistor includes a gate electrode, a gate insulating layer, an oxide semiconductor layer, an oxide buffer layer, a protective layer, and source and drain electrodes. The gate electrode is formed on a substrate. The gate insulating layer is formed on the substrate. The oxide semiconductor layer is formed on the gate insulating layer and includes a source, a channel and a drain region. The oxide buffer layer is formed on the oxide semiconductor layer, and has a carrier concentration lower than that of the oxide semiconductor layer. The protective layer is formed on the oxide buffer layer and the gate insulating layer, and has contact holes formed therein so that the oxide buffer layer in the source and drain regions are exposed therethrough. The source and drain electrodes are coupled with the oxide buffer layer in the source and drain regions through the contact holes.