公开(公告)号：US07499091B2

公开(公告)日：2009-03-03

申请号：US10508234

申请日：2003-03-20

申请人： Takashi Abe ,  Ryoji Suzuki ,  Keiji Mabuchi

发明人： Takashi Abe ,  Ryoji Suzuki ,  Keiji Mabuchi

IPC分类号： H04N3/14 ,  H04N5/335

CPC分类号： H04N5/3532 ,  H04N5/3456

摘要： A solid-state imaging device for preventing aging deterioration of image quality due to a thinning out reading mode in addition to a usual all pixel reading operation mode and maintaining a good image quality and a method for driving the same, including an imaging pixel portion 111 formed by arranging a plurality of pixels each including a photo-electric conversion element and a reading circuit of the photo-electric conversion element in a matrix, having an all pixel reading mode for reading pixel signals from all pixels of the imaging pixel portion 111 and a thinning out reading mode for intermittently selecting part of the pixels of the imaging pixel portion 111 for each pixel row or each pixel column or both of them to read out pixel signals, and having drive circuits 112 to 116 having a function of selecting the reading circuit of the imaging pixel portion 111 for each pixel row or each pixel column by a drive signal and receiving as input drive signals also with respect to the pixel rows or pixel columns thinned out at the time of driving by the thinning out reading mode to operate the reading circuit of each pixel.

摘要翻译： 一种固态成像装置，除了通常的全部像素读取操作模式以及保持良好的图像质量以及其驱动方法之外，还可以防止由于稀疏读取模式引起的图像质量的老化劣化，其包括成像像素部分111 通过以矩阵形式布置包括光电转换元件的光电转换元件和读取电路的多个像素，具有用于从成像像素部分111的所有像素读取像素信号的全像素读取模式和 用于间歇地选择每个像素行或每个像素列或两者的成像像素部分111的像素的一部分的稀疏读取模式以读出像素信号，并且具有选择读取功能的驱动电路112至116 通过驱动信号针对每个像素行或每个像素列的成像像素部分111的电路，并且还相对于像素接收作为输入驱动信号 通过稀疏读出模式在驱动时间薄化的EL行或像素列，以操作每个像素的读取电路。

公开(公告)号：US07485903B2

公开(公告)日：2009-02-03

申请号：US10979707

申请日：2004-11-02

申请人： Takashi Abe ,  Ryoji Suzuki ,  Keiji Mabuchi ,  Testuya Iizuka ,  Takahisa Ueno ,  Tsutomu Haruta

发明人： Takashi Abe ,  Ryoji Suzuki ,  Keiji Mabuchi ,  Testuya Iizuka ,  Takahisa Ueno ,  Tsutomu Haruta

IPC分类号： H01L27/148

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14643

摘要： A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. In the solid-state imaging device, a well contact part is formed in an activation region of a photoelectric conversion portion. The well contact part fixes a well in which the photoelectric conversion portion and transistors of the pixel are provided at a predetermined potential.

摘要翻译： 提供了一种固态成像装置，其具有为每个像素实现良好接触的布置。 在固态成像装置中，在光电转换部的激活区域形成阱接触部。 阱接触部分固定在其中以预定电位设置像素的光电转换部分和晶体管的阱。

公开(公告)号：US20070177041A1

公开(公告)日：2007-08-02

申请号：US11728140

申请日：2007-03-23

申请人： Ryoji Suzuki ,  Takahisa Ueno ,  Keiji Mabuchi

发明人： Ryoji Suzuki ,  Takahisa Ueno ,  Keiji Mabuchi

IPC分类号： H04N5/335

CPC分类号： H04N5/3575 ,  H01L27/14612 ,  H04N5/357 ,  H04N5/374

摘要： Each unit pixel includes a photodiode, a reading selection transistor, a reading transistor, an amplifying transistor, a reset transistor, and a horizontal selection transistor, and thus a MOS image sensor of a dot-sequential reading 5-Tr type is formed. The reading selection transistor and the reading transistor are formed with a two-layer gate structure, and gate potential of the reading selection transistor and the reading transistor is set to a negative potential. Thereby, a lower layer of a gate region of the reading transistor and the reading selection transistor is controlled to a negative potential. Thus, depletion in the lower layer region is suppressed to reduce leakage current.

摘要翻译： 每个单位像素包括光电二极管，读选择晶体管，读晶体管，放大晶体管，复位晶体管和水平选择晶体管，因此形成点序读取5-Tr型的MOS图像传感器。 读取选择晶体管和读取晶体管形成为双层栅极结构，读取选择晶体管和读取晶体管的栅极电位被设置为负电位。 由此，读取晶体管的栅极区域的下层和读取选择晶体管被控制为负电位。 因此，抑制下层区域的耗尽以减少漏电流。

公开(公告)号：US07209171B2

公开(公告)日：2007-04-24

申请号：US10286313

申请日：2002-11-01

申请人： Ryoji Suzuki ,  Takahisa Ueno ,  Keiji Mabuchi

发明人： Ryoji Suzuki ,  Takahisa Ueno ,  Keiji Mabuchi

IPC分类号： H04N3/14 ,  H04N9/64 ,  H01L27/148 ,  H01L31/062

CPC分类号： H04N5/3575 ,  H01L27/14612 ,  H04N5/357 ,  H04N5/374

摘要： Each unit pixel includes a photodiode, a reading selection transistor, a reading transistor, an amplifying transistor, a reset transistor, and a horizontal selection transistor, and thus a MOS image sensor of a dot-sequential reading 5-Tr type is formed. The reading selection transistor and the reading transistor are formed with a two-layer gate structure, and gate potential of the reading selection transistor and the reading transistor is set to a negative potential. Thereby, a lower layer of a gate region of the reading transistor and the reading selection transistor is controlled to a negative potential. Thus, depletion in the lower layer region is suppressed to reduce leakage current.

公开(公告)号：US06423993B1

公开(公告)日：2002-07-23

申请号：US09499449

申请日：2000-02-07

申请人： Ryoji Suzuki ,  Takahisa Ueno ,  Hirofumi Sumi ,  Keiji Mabuchi

发明人： Ryoji Suzuki ,  Takahisa Ueno ,  Hirofumi Sumi ,  Keiji Mabuchi

IPC分类号： H01L31062

CPC分类号： H01L27/1463 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14689

摘要： A solid-state image-sensing device has pn-junction sensor parts isolated corresponding to pixels by a device isolation layer. The solid-state image-sensing device includes a first-conductivity-type second semiconductor well region formed between a first-conductivity-type first semiconductor well region and the device isolation layer. When the device is operating, a depletion layer of each sensor part spreads to the first semiconductor well region, which is beneath each of the sensor parts.

摘要翻译： 固态图像感测装置具有通过器件隔离层对应于像素的pn结传感器部分。 固体摄像装置包括形成在第一导电型第一半导体阱区域和器件隔离层之间的第一导电型第二半导体阱区域。 当设备运行时，每个传感器部分的耗尽层扩散到位于每个传感器部件下方的第一半导体阱区域。

公开(公告)号：US09402038B2

公开(公告)日：2016-07-26

申请号：US13482631

申请日：2012-05-29

申请人： Keiji Mabuchi

发明人： Keiji Mabuchi

IPC分类号： H04N5/217 ,  H04N5/335 ,  H01L27/00 ,  H01J40/14 ,  H04N5/353 ,  H04N5/359 ,  H04N5/3745

CPC分类号： H04N5/353 ,  H04N5/359 ,  H04N5/3591 ,  H04N5/37457

摘要： A solid-state imaging device includes: a pixel array section including an array of pixels in a two-dimensional matrix, the pixels including a photoelectric conversion section configured to generate signal charges in accordance with an amount of light, a discharge section configured to receive an overflow of signal charges exceeding a saturation amount of charges during an exposure period, at least a first charge accumulation section configured to receive the signal charges generated by the photoelectric conversion section after the exposure period, and a second charge accumulation section configured to receive the signal charges exceeding the saturation amount of charges, and a plurality of pixel transistors reading the signal charges; and a scanning section configured to scan the pixels so that accumulation periods for all the pixels are simultaneous in an accumulation period of the signal charges, and to selectively scan the pixels in sequence.

摘要翻译： 固态成像装置包括：像素阵列部，包括二维矩阵中的像素阵列，所述像素包括被配置为根据光量产生信号电荷的光电转换部，被配置为接收的放电部 信号电荷的溢出在曝光期间超过电荷的饱和量，至少第一电荷蓄积部被配置为在曝光期后接收由光电转换部生成的信号电荷，第二电荷累积部被配置为接收 信号电荷超过饱和电荷量，以及读取信号电荷的多个像素晶体管; 以及扫描部，被配置为扫描像素，使得所有像素的累积周期在信号电荷的累积周期中同时进行，并且依次选择性地扫描像素。

公开(公告)号：US20160165162A1

公开(公告)日：2016-06-09

申请号：US14925333

申请日：2015-10-28

申请人： Keiji Mabuchi ,  Eiichi FUNATSU ,  Kasai Masanori

发明人： Keiji Mabuchi ,  Eiichi FUNATSU ,  Kasai Masanori

IPC分类号： H04N5/378 ,  H04N5/225 ,  H04N5/369 ,  H04N5/376

CPC分类号： H04N5/378 ,  H04N5/2253 ,  H04N5/3559 ,  H04N5/365 ,  H04N5/3698 ,  H04N5/37213 ,  H04N5/374 ,  H04N5/376 ,  H04N5/3765

摘要： A CMOS sensor has unit pixels each structured by a light receiving element and three transistors, to prevent against the phenomenon of saturation shading and the reduction of dynamic range. The transition time (fall time), in switching off the voltage on a drain line shared in all pixels, is given longer than the transition time in turning of any of the reset line and the transfer line. For this reason, the transistor constituting a DRN drive buffer is made proper in its W/L ratio. Meanwhile, a control resistance or current source is inserted on a line to the GND, to make proper the operation current during driving. This reduces saturation shading amount. By making a reset transistor in a depression type, the leak current to a floating diffusion is suppressed to broaden the dynamic range.

摘要翻译： CMOS传感器具有由光接收元件和三个晶体管构成的单位像素，以防止饱和阴影现象和动态范围的减小。 在关闭所有像素中共享的漏极线上的电压时，转换时间（下降时间）的长度大于转动任何复位线和传输线的转换时间。 因此，构成DRN驱动缓冲器的晶体管的W / L比是合适的。 同时，将控制电阻或电流源插入到GND的一条线上，以使驱动期间的操作电流正确。 这样可以减少饱和度遮蔽量。 通过使抑制型复位晶体管成为抑制浮动扩散的漏电流，扩大动态范围。

公开(公告)号：US09179073B2

公开(公告)日：2015-11-03

申请号：US13426719

申请日：2012-03-22

申请人： Keiji Mabuchi

发明人： Keiji Mabuchi

IPC分类号： H04N5/235 ,  H04N5/355 ,  H04N5/378

CPC分类号： H04N5/378 ,  H04N5/2351 ,  H04N5/35545

摘要： A solid-state imaging device is provided that includes a pixel array section having pixels which detect a physical quantities that are arranged in two dimensions of a matrix; an Analog-Digital (AD) converting section that performs AD conversion for a plurality of channels of analog pixel signals which are read-out from the pixel array section; and a control section that sets quantized units AD-converted by the AD conversion section according to a gain setting of the unit pixel signal, where the control section determines a grayscale number of digital outputs AD-converted for at least one channel of the unit pixel signals according to the gain setting of the pixel signal.

摘要翻译： 提供一种固态成像装置，其包括像素阵列部分，该像素阵列部分具有检测布置在矩阵的二维中的物理量的像素; 模拟数字（AD）转换部分，对从像素阵列部分读出的多个模拟像素信号进行AD转换; 以及控制部分，其根据单位像素信号的增益设置来设置由AD转换部分AD转换的量化单元，其中控制部分确定对于单位像素的至少一个通道AD转换的数字输出的灰度级数 信号根据像素信号的增益设置。

公开(公告)号：US09041827B2

公开(公告)日：2015-05-26

申请号：US11655201

申请日：2007-01-19

申请人： Hiroki Sato ,  Keiji Mabuchi ,  Nobuo Nakamura ,  Tetsuya Iizuka

发明人： Hiroki Sato ,  Keiji Mabuchi ,  Nobuo Nakamura ,  Tetsuya Iizuka

IPC分类号： H04N5/228 ,  H04N5/335 ,  H04N3/14

CPC分类号： H04N5/335

摘要： The invention makes it possible to perform effective A/D conversion on pixel signals read from a pixel array part, to achieve a reduction in power consumption and reductions in the size and the price of an image pickup device as well as simplification of the construction of the device, and to realize a high-quality image output. The device includes an pixel array part having a plurality of unit pixels, a CDS (correlated double sampling) circuit, and an A/D converter. A pixel signal read from a pixel array part via a signal line is subjected to CDS processing (noise elimination processing) in the CDS circuit, and then this pixel signal is inputted into the A/D converter which performs A/D conversion on the pixel signal. The A/D converter includes a ΔΣ modulator and a digital filter to perform highly accurate A/D conversion. The invention can also be applied to a construction in which an A/D converter is provided at the front stage of the CDS circuit.

摘要翻译： 本发明使得可以对从像素阵列部分读取的像素信号进行有效的A / D转换，以实现图像拾取装置的功耗的降低和尺寸和价格的降低以及简化的 该设备，并实现高质量的图像输出。 该装置包括具有多个单位像素的像素阵列部分，CDS（相关双采样）电路和A / D转换器。 经由信号线从像素阵列部分读取的像素信号在CDS电路中进行CDS处理（噪声消除处理），然后将该像素信号输入到对像素进行A / D转换的A / D转换器 信号。 A / D转换器包括＆Dgr＆amp; 调制器和数字滤波器，以执行高精度的A / D转换。 本发明也可以应用于在CDS电路的前级设置A / D转换器的结构。

公开(公告)号：US08934038B2

公开(公告)日：2015-01-13

申请号：US13450236

申请日：2012-04-18

申请人： Keiji Mabuchi ,  Koichi Shiono

发明人： Keiji Mabuchi ,  Koichi Shiono

IPC分类号： H04N3/14 ,  H04N5/335 ,  H04N5/345 ,  H04N5/343 ,  H04N5/347 ,  H04N5/376 ,  H04N9/04 ,  H04N5/374

CPC分类号： H04N5/343 ,  H01L27/14605 ,  H01L27/14621 ,  H01L27/14643 ,  H01L27/14812 ,  H04N5/3456 ,  H04N5/3458 ,  H04N5/347 ,  H04N5/374 ,  H04N5/3765 ,  H04N5/378 ,  H04N9/045 ,  H04N9/04511 ,  H04N2209/045

摘要： There is used an XY address type solid-state image pickup element (for example, a MOS type image sensor) in which two rows and two columns are made a unit, and color filters having a color coding of repetition of the unit (repetition of two verticals (two horizontals) are arranged, and when a thinning-out read mode is specified, a clock frequency of a system is changed to 1/9, and on the basis of the changed clock frequency, a pixel is selected every three pixels in both a row direction and a column direction to successively read out a pixel signal.

摘要翻译： 使用其中两行和两列成为一个单元的XY地址类型的固态图像拾取元件（例如，MOS型图像传感器），以及具有单元重复的颜色编码的滤色器（重复 布置两个垂直线（两个水平线），当指定了稀疏读出模式时，系统的时钟频率变为1/9，并且基于改变的时钟频率，每3个像素选择一个像素 在行方向和列方向上，以连续地读出像素信号。