公开(公告)号：US20150091119A1

公开(公告)日：2015-04-02

申请号：US14565773

申请日：2014-12-10

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Duli Mao ,  Hsin-Chih Tai ,  Howard E. Rhodes

IPC: G02B5/20 ,  H01L27/146 ,  G02B1/10

CPC classification number: G02B5/201 ,  G02B1/105 ,  G02B1/14 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14685

Abstract: Embodiments of an apparatus including a color filter arrangement formed on a substrate having a pixel array formed therein. The color filter arrangement includes a clear filter having a first clear hard mask layer and a second clear hard mask layer formed thereon, a first color filter having the first clear hard mask layer and the second hard mask layer formed thereon, a second color filter having the first clear hard mask layer formed thereon, and a third color filter having no clear hard mask layer formed thereon. Other embodiments are disclosed and claimed.

Abstract translation: 包括形成在其上形成有像素阵列的基板上的滤色器装置的装置的实施例。 滤色器装置包括具有形成在其上的第一透明硬掩模层和第二透明硬掩模层的透明滤光器，具有形成在其上的第一透明硬掩模层和第二硬掩模层的第一滤色器，具有第二透明硬掩模层的第二滤色器， 形成在其上的第一透明硬掩模层和形成有透明硬掩模层的第三滤色器。 公开和要求保护其他实施例。

公开(公告)号：US08957359B2

公开(公告)日：2015-02-17

申请号：US13651092

申请日：2012-10-12

Applicant: OmniVision Technologies, Inc.

Inventor： Gang Chen ,  Duli Mao ,  Hsin-Chih Tai ,  Howard E. Rhodes

IPC: H01L27/146

CPC classification number: H01L27/14612 ,  H04N5/3559

Abstract: Embodiments of the invention describe providing a compact solution to provide high dynamic range imaging (HDRI or simply HDR) for an imaging pixel by utilizing a control node for resetting a floating diffusion node to a reference voltage value and for selectively transferring an image charge from a photosensitive element to a readout node. Embodiments of the invention further describe control node to have to a plurality of different capacitance regions to selectively increase the overall capacitance of the floating diffusion node. This variable capacitance of the floating diffusion node increases the dynamic range of the imaging pixel, thereby providing HDR for the host imaging system, as well as increasing the signal-to-noise ratio (SNR) of the imaging system.

Abstract translation: 本发明的实施例描述了提供一种紧凑的解决方案，以通过利用用于将浮动扩散节点复位到参考电压值的控制节点和用于选择性地传输图像电荷的方法来为成像像素提供高动态范围成像（HDRI或简单的HDR） 感光元件到读出节点。 本发明的实施例进一步描述控制节点必须具有多个不同的电容区域以选择性地增加浮动扩散节点的整体电容。 浮动扩散节点的这种可变电容增加了成像像素的动态范围，从而为主机成像系统提供了HDR，并且提高了成像系统的信噪比（SNR）。

公开(公告)号：US20140239152A1

公开(公告)日：2014-08-28

申请号：US13775747

申请日：2013-02-25

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Duli Mao ,  Hsin-Chih Tai

IPC: H01L27/146

CPC classification number: H01L27/14605 ,  H01L27/14603 ,  H01L27/14607 ,  H01L27/14612 ,  H01L27/14641

Abstract: An image sensor includes a first pixel unit horizontally adjacent to a second pixel unit. Each pixel unit includes plurality of photodiodes and a shared floating diffusion region. A first pixel transistor region of the first pixel unit has a plurality of pixel transistors. A second pixel transistor region of the second pixel unit is horizontally adjacent to the first pixel transistor region and also has a plurality of pixel transistors. A transistor layout of the second pixel transistor region is a minor image of a transistor layout of the first pixel transistor region.

Abstract translation: 图像传感器包括与第二像素单元水平相邻的第一像素单元。 每个像素单元包括多个光电二极管和共享的浮动扩散区域。 第一像素单元的第一像素晶体管区域具有多个像素晶体管。 第二像素单元的第二像素晶体管区域与第一像素晶体管区域水平相邻并且还具有多个像素晶体管。 第二像素晶体管区域的晶体管布局是第一像素晶体管区域的晶体管布局的次要图像。

公开(公告)号：US08816462B2

公开(公告)日：2014-08-26

申请号：US13660774

申请日：2012-10-25

Applicant: OmniVision Technologies, Inc.

Inventor： Howard E. Rhodes ,  Dajiang Yang ,  Gang Chen ,  Duli Mao ,  Vincent Venezia

IPC: H01L27/146

CPC classification number: H01L31/0224 ,  H01L27/14609 ,  H01L27/1462 ,  H01L27/14643 ,  H01L31/103

Abstract: An image sensor pixel includes a photodiode region having a first polarity doping type disposed in a semiconductor layer. A pinning surface layer having a second polarity doping type is disposed over the photodiode region in the semiconductor layer. The second polarity is opposite from the first polarity. A first polarity charge layer is disposed proximate to the pinning surface layer over the photodiode region. An contact etch stop layer is disposed over the photodiode region proximate to the first polarity charge layer. The first polarity charge layer is disposed between the pinning surface layer and the contact etch stop layer such that first polarity charge layer cancels out charge having a second polarity that is induced in the contact etch stop layer. A passivation layer is also disposed over the photodiode region between the pinning surface layer and the contact etch stop layer.

Abstract translation: 图像传感器像素包括设置在半导体层中的具有第一极性掺杂型的光电二极管区域。 具有第二极性掺杂型的钉扎表面层设置在半导体层中的光电二极管区域的上方。 第二极性与第一极性相反。 第一极性电荷层设置在光电二极管区域附近的钉扎表面层附近。 接触蚀刻停止层设置在靠近第一极性电荷层的光电二极管区域的上方。 第一极性电荷层设置在钉扎表面层和接触蚀刻停止层之间，使得第一极性电荷层抵消在接触蚀刻停止层中感应的具有第二极性的电荷。 钝化层也设置在钉扎表面层和接触蚀刻停止层之间的光电二极管区域之上。

公开(公告)号：US20140084135A1

公开(公告)日：2014-03-27

申请号：US13625458

申请日：2012-09-24

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Duli Mao ,  Hsin-Chih Tai

IPC: H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/1464 ,  H01L31/09 ,  H01L31/1013 ,  H04N5/222 ,  H04N5/2251 ,  H04N5/247 ,  H04N5/376

Abstract: A monolithic backside-sensor-illumination (BSI) image sensor has a sensor array is tiled with a multiple-pixel cells having a first pixel sensor primarily sensitive to red light, a second pixel sensor primarily sensitive to red and green light, and a third pixel sensor having panchromatic sensitivity, the pixel sensors laterally adjacent each other. The image sensor determines a red, a green, and a blue signal comprising by reading the red-sensitive pixel sensor of each multiple-pixel cell to determine the red signal, reading the sensor primarily sensitive to red and green light to determine a yellow signal and subtracting the red signal to determine a green signal. The image sensor reads the panchromatic-sensitive pixel sensor to determine a white signal and subtracts the yellow signal to provide the blue signal.

Abstract translation: 单片背面传感器照明（BSI）图像传感器具有传感器阵列，其具有具有主要对红光敏感的第一像素传感器的多像素单元，对红色和绿色光敏感的第二像素传感器，以及第三像素传感器 像素传感器具有全色灵敏度，像素传感器横向相邻。 图像传感器确定红色，绿色和蓝色信号，其包括通过读取每个多像素单元的红色敏感像素传感器来确定红色信号，读取对红色和绿色光敏感的传感器以确定黄色信号 并减去红色信号以确定绿色信号。 图像传感器读取全色敏感像素传感器以确定白色信号，并减去黄色信号以提供蓝色信号。

公开(公告)号：US12062670B2

公开(公告)日：2024-08-13

申请号：US17243024

申请日：2021-04-28

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Hui Zang ,  Yuanliang Liu ,  Keiji Mabuchi ,  Gang Chen ,  Bill Phan ,  Duli Mao ,  Takeshi Takeda

IPC: H01L27/146

CPC classification number: H01L27/14607 ,  H01L27/14612 ,  H01L27/1463

Abstract: An image sensor comprises a first photodiode region and circuitry. The first photodiode region is disposed within a semiconductor substrate proximate to a first side of the semiconductor substrate to form a first pixel. The first photodiode region includes a first segment coupled to a second segment. The circuitry includes at least a first electrode associated with a first transistor. The first electrode is disposed, at least in part, between the first segment and the second segment of the first photodiode region such that the circuity is at least partially surrounded by the first photodiode region when viewed from the first side of the semiconductor substrate.

公开(公告)号：US11862678B2

公开(公告)日：2024-01-02

申请号：US16905625

申请日：2020-06-18

Applicant: OmniVision Technologies, Inc.

Inventor： Yuanwei Zheng ,  Sing-Chung Hu ,  Gang Chen ,  Dyson Tai ,  Lindsay Grant

IPC: H01L27/146 ,  H01L29/06

CPC classification number: H01L29/0653 ,  H01L27/1463 ,  H01L27/14612 ,  H01L27/14643 ,  H01L27/14689

Abstract: A pixel-array substrate includes a semiconductor substrate with a pixel array, a back surface, and a front surface, and a guard ring formed of a doped semiconductor, enclosing the pixel array, and extending into the semiconductor substrate from the front surface, the back surface forming a trench extending into the semiconductor substrate, the trench overlapping the guard ring. A method for reducing leakage current into a pixel-array includes doping a semiconductor substrate to form a guard ring that extends into the semiconductor substrate from a front surface, encloses a pixel array, excludes a periphery region, and resists a flow of electric current, and forming, into a back surface of the semiconductor substrate, a trench that penetrates into the back surface and overlaps the guard ring, the guard ring and the trench configured to resist the flow of electric current between the pixel array and the periphery region.

公开(公告)号：US11810940B2

公开(公告)日：2023-11-07

申请号：US17080797

申请日：2020-10-26

Applicant: OmniVision Technologies, Inc.

Inventor： Hui Zang ,  Gang Chen

IPC: H01L27/146 ,  H01L31/102

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L31/102

Abstract: A pointed-trench pixel-array substrate includes a floating diffusion region and a photodiode region formed in a semiconductor substrate. The semiconductor substrate includes, between a top surface and a back surface thereof, a sidewall surface and a bottom surface defining a trench extending into the semiconductor substrate away from a planar region of the top surface surrounding the trench. In a cross-sectional plane perpendicular to the top surface and intersecting the floating diffusion region, the photodiode region, and the trench, (i) the bottom surface is V-shaped and (ii) the trench is located between the floating diffusion region and the photodiode region.

公开(公告)号：US11621336B2

公开(公告)日：2023-04-04

申请号：US17326095

申请日：2021-05-20

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Hui Zang ,  Gang Chen

IPC: H01L29/423 ,  H01L29/66 ,  H01L27/146 ,  H01L29/78

Abstract: Transistors include a pyramid-shaped gate trench defined by a triangular shape or a trapezoidal shape in a channel width plane and a trapezoidal shape in a channel length plane. Side wall portions of the pyramid-shaped gate trench form a channel having a triangular shape or a trapezoidal shape in the channel width plane. Advantageously, such transistors increase transconductance without increasing pixel width. Devices, image sensors, and pixels incorporating such transistors are also provided, in addition to methods of manufacturing the same.

公开(公告)号：US11588033B2

公开(公告)日：2023-02-21

申请号：US17326112

申请日：2021-05-20

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Hui Zang ,  Gang Chen

IPC: H01L29/423 ,  H01L27/146 ,  H01L29/78 ,  H01L29/66

Abstract: Transistors having nonplanar electron channels in the channel width plane have one or more features that cause the different parts of the nonplanar electron channel to turn on at substantially the same threshold voltage. Advantageously, such transistors have substantially uniform threshold voltage across the nonplanar electron channel. Devices, image sensors, and pixels incorporating such transistors are also provided, in addition to methods of manufacturing the same.