公开(公告)号：US08044416B2

公开(公告)日：2011-10-25

申请号：US12093549

申请日：2008-03-25

Applicant: Li Wang ,  Fengyi Jiang ,  Yingwen Tang ,  Junlin Liu

Inventor： Li Wang ,  Fengyi Jiang ,  Yingwen Tang ,  Junlin Liu

IPC: H01L33/30

CPC classification number: H01L33/0079 ,  H01L33/08 ,  H01L33/20 ,  H01L33/44

Abstract: One embodiment of the present invention provides a method for fabricating a high-power light-emitting diode (LED). The method includes etching grooves on a growth substrate, thereby forming mesas on the growth substrate. The method further includes fabricating indium gallium aluminum nitride (InGaAlN)-based LED multilayer structures on the mesas on the growth substrate, wherein a respective mesa supports a separate LED structure. In addition, the method includes bonding the multilayer structures to a conductive substrate. The method also includes removing the growth substrate. Furthermore, the method includes depositing a passivation layer and an electrode layer above the InGaAlN multilayer structures, wherein the passivation layer covers the sidewalls and bottom of the grooves. Moreover, the method includes creating conductive paths which couple a predetermined number of adjacent individual LEDs, thereby allowing the LEDs to share a common power supply and be powered simultaneously to form a high-power LED array.

Abstract translation: 本发明的一个实施例提供一种制造大功率发光二极管（LED）的方法。 该方法包括在生长衬底上蚀刻凹槽，从而在生长衬底上形成台面。 该方法还包括在生长衬底上的台面上制造基于铟镓铝（InGaAlN）的LED多层结构，其中相应的台面支撑单独的LED结构。 此外，该方法包括将多层结构粘合到导电基底上。 该方法还包括去除生长底物。 此外，该方法包括在InGaAlN多层结构上沉积钝化层和电极层，其中钝化层覆盖槽的侧壁和底部。 此外，该方法包括产生耦合预定数量的相邻独立LED的导电路径，从而允许LED共享公共电源并且被同时供电以形成大功率LED阵列。

公开(公告)号：US20110230223A1

公开(公告)日：2011-09-22

申请号：US13125587

申请日：2009-08-18

Applicant: Zhaohua Lu ,  Ying Liu ,  Wei Xia ,  Hongyun Qu ,  Li Wang ,  Kexue Lu

Inventor： Zhaohua Lu ,  Ying Liu ,  Wei Xia ,  Hongyun Qu ,  Li Wang ,  Kexue Lu

IPC: H04W72/04

CPC classification number: H04W72/042 ,  H04W76/30

Abstract: The present invention discloses a method and a base station for adjusting a persistent allocation of resource, wherein the method comprises: a base station sends a resource persistent allocation message to a terminal via a downlink channel, wherein the base station indicates a resource de-allocation by a resource allocation flag in the resource persistent allocation message, and indicates whether a resource hole filling is needed by the resource shifting indicator in the resource persistent allocation message, wherein under the circumstance that the resource hole filling is needed, the location of a de-allocated resource is carried in the resource persistent allocation message; and under the circumstance that no resource hole filling is needed, the identifier of the terminal is carried in the resource persistent allocation message. By using the present invention, the information such as the terminal identifier can be carried optionally by modifying the content carried in the resource persistent allocation message, so that the redundant content in the message is eliminated, the problem that the efficiency of system frequency spectrum is reduced due to the redundant content in the message is avoided, system resources are saved, and system performances are improved.

Abstract translation: 本发明公开了一种用于调整资源的持续分配的方法和基站，其中所述方法包括：基站经由下行链路信道向终端发送资源持续分配消息，其中，所述基站指示资源去分配 通过资源持续分配消息中的资源分配标志，并且指示资源持续分配消息中的资源移动指示符是否需要资源空穴填充，其中在需要资源充填的情况下， 资源持久分配消息中承载了分配资源; 在不需要资源填充的情况下，终端的标识符在资源持久性分配消息中被携带。 通过使用本发明，可以通过修改资源持久性分配消息中携带的内容来选择性地携带诸如终端标识符的信息，从而消除消息中的冗余内容，系统频谱的效率为 避免了消息中冗余内容的减少，节省了系统资源，提高了系统性能。

公开(公告)号：US07986994B2

公开(公告)日：2011-07-26

申请号：US10727008

申请日：2003-12-03

Applicant: Robert W. Stadler ,  Li Wang

Inventor： Robert W. Stadler ,  Li Wang

IPC: A61N1/365

CPC classification number: A61B5/0538 ,  A61B5/0537 ,  A61B5/4875 ,  A61B5/686 ,  A61B5/7275 ,  A61N1/362 ,  A61N1/3627 ,  A61N1/36521 ,  G06F12/0862 ,  G06F12/0877

Abstract: A method and apparatus for detection of changes in impedance a patient that includes generating measured impedances, generating an adaptive baseline trend of the measured impedances corresponding to a first time period, generating a short term trend of the measured impedances corresponding to a second time period less than the first time period, and generating a metric of impedance change between the adaptive baseline trend and one of a most recent measured impedance and the short term trend of the measured impedances.

Abstract translation: 一种用于检测患者阻抗变化的方法和装置，包括产生测量的阻抗，产生对应于第一时间段的所测量的阻抗的自适应基线趋势，产生对应于第二时间段的所测量的阻抗的短期趋势 并且产生自适应基线趋势与最近测量的阻抗之一和所测量的阻抗的短期趋势之间的阻抗变化的度量。

公开(公告)号：US20110172728A1

公开(公告)日：2011-07-14

申请号：US12962245

申请日：2010-12-07

Applicant: Li Wang

Inventor： Li Wang

IPC: A61N1/39

CPC classification number: A61N1/3756 ,  A61B5/0452 ,  A61B5/0472 ,  A61N1/362 ,  A61N1/3627 ,  A61N1/365 ,  A61N1/3682 ,  A61N1/3684

Abstract: Embodiments of close loop optimization of atrio-ventricular (A-V) delay interval and/or inter-ventricular (V-V) timing are disclosed. An implantable medical device includes a housing that supports a processing means adapted for implantation in a patient. There can be two or more electrodes electrically coupled to the processing means where the two or more electrodes can be used for sensing a patient's cardiac signals, which include a far-field EGM. The processing means can determine a width of a P-wave from the sensed far-field EGM. Also included can be a means for delivering an adapted cardiac pacing therapy based upon the width of the P-wave, including revised A-V delay and/or V-V temporal intervals.

Abstract translation: 公开了房室（A-V）延迟间隔和/或心室间（V-V）定时的闭环优化的实施例。 可植入医疗装置包括支撑适于植入患者体内的处理装置的外壳。 可以有两个或更多个电极耦合到处理装置的电极，其中两个或更多个电极可用于感测患者的心脏信号，其包括远场EGM。 处理装置可以从感测的远场EGM确定P波的宽度。 还包括可以用于基于P波的宽度（包括修正的A-V延迟和/或V-V时间间隔）递送适应的心脏起搏治疗的手段。

公开(公告)号：US20110142944A1

公开(公告)日：2011-06-16

申请号：US12969395

申请日：2010-12-15

Applicant: Yuqing Wang ,  Li Wang ,  Xun Zhang

Inventor： Yuqing Wang ,  Li Wang ,  Xun Zhang

IPC: A61K9/14 ,  A61K36/88 ,  A61P11/00 ,  A61P37/02

CPC classification number: A61K9/2077 ,  A61K9/1611 ,  A61K9/1635 ,  A61K9/1652 ,  A61K36/19

Abstract: A pharmaceutical formulation containing 50-90% by weight a powdered extract of Andrographis paniculata and 5-50% by weight a powdered blocking agent. The formulation may further contain a pore-forming agent, a filler, a lubricant, or a glidant. Also described are a method for preparing this pharmaceutical formulation and a method for treating inflammatory disease, immunological disease, or respiratory disease with it.

Abstract translation: 一种药物制剂，其含有50-90重量％的穿心莲的粉末提取物和5-50重量％的粉末封闭剂。 制剂还可以含有成孔剂，填料，润滑剂或助流剂。 还描述了制备该药物制剂的方法和用它治疗炎性疾病，免疫疾病或呼吸系统疾病的方法。

公开(公告)号：US20110140081A1

公开(公告)日：2011-06-16

申请号：US13059913

申请日：2008-08-19

Applicant: Fengyi Jiang ,  Li Wang

Inventor： Fengyi Jiang ,  Li Wang

IPC: H01L33/06 ,  H01L33/00

CPC classification number: H01L33/0079 ,  H01L33/44

Abstract: A method for fabricating a semiconductor light-emitting device includes fabricating a multilayer semiconductor structure on a first substrate, wherein the multilayer semiconductor structure comprises a first doped semiconductor layer, an MQW active layer, a second doped semiconductor layer, and a first passivation layer. The method further involves patterning and etching part of the first passivation layer to expose the first doped semiconductor layer. A first electrode is then formed, which is coupled to the first doped semiconductor layer. Next, the multilayer structure is bonded to a second substrate; and the first substrate is removed. A second electrode is formed, which is coupled to the second doped semiconductor layer. Further, a second passivation layer is formed, which substantially covers the sidewalls of multilayer structure and part of the surface of the second doped semiconductor layer which is not covered by the second electrode.

Abstract translation: 一种制造半导体发光器件的方法包括在第一衬底上制造多层半导体结构，其中所述多层半导体结构包括第一掺杂半导体层，MQW有源层，第二掺杂半导体层和第一钝化层。 该方法还包括图案化和蚀刻第一钝化层的一部分以暴露第一掺杂半导体层。 然后形成第一电极，其耦合到第一掺杂半导体层。 接着，将多层结构体接合到第二基板上; 并且去除第一衬底。 形成第二电极，其耦合到第二掺杂半导体层。 此外，形成第二钝化层，其基本上覆盖多层结构的侧壁和第二掺杂半导体层的未被第二电极覆盖的部分表面。

公开(公告)号：US20110084377A1

公开(公告)日：2011-04-14

申请号：US12709952

申请日：2010-02-22

Applicant: Jack Chang Chien ,  KH Ong ,  Weili Wang ,  Li Wang ,  XingZhi Liang ,  Shicai Ma

Inventor： Jack Chang Chien ,  KH Ong ,  Weili Wang ,  Li Wang ,  XingZhi Liang ,  Shicai Ma

IPC: H01L23/498 ,  H01L21/50 ,  B32B38/10

CPC classification number: H01L21/67132 ,  H01L23/3107 ,  H01L25/0657 ,  H01L2224/48091 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2225/06565 ,  Y10T156/1132 ,  Y10T156/1179 ,  Y10T156/1944 ,  Y10T156/1983 ,  H01L2924/00014

Abstract: A system is disclosed for ejecting a semiconductor die from a tape to which the die is affixed during the wafer dicing process. In embodiments, the system includes an ejector tool including a support table, ejector pins and a pick-up arm. The support table is connected to a vacuum source for creating a negative pressure at an interface between the tape and support table. The support table further includes an aperture with one or more chamfered sidewalls. The vacuum source is connected to the aperture so that, upon placement of the tape on the support table with a die centered over the aperture, the vacuum source pulls a portion of the tape around the edges of the semiconductor die away from the die and into the space created by the chamfered edges.

Abstract translation: 公开了一种系统，用于在晶片切割过程期间从模具固定到的带上弹出半导体管芯。 在实施例中，系统包括具有支撑台，顶针和拾取臂的顶出器工具。 支撑台连接到真空源，用于在带和支撑台之间的界面处产生负压。 支撑台还包括具有一个或多个倒角侧壁的孔。 真空源连接到孔口，使得当带子以孔为中心的模具放置在支撑台上时，真空源将半导体管芯的边缘周围的一部分带离开模具并且进入 由倒角边缘产生的空间。

公开(公告)号：US07833783B2

公开(公告)日：2010-11-16

申请号：US11485240

申请日：2006-07-12

Applicant: Deborah Haines ,  Gordon Allan ,  John Ellis ,  Brian Meehan ,  Edward Clark ,  Lori Hassard ,  John Harding ,  Catherine Elisabeth Charreyre ,  Gilles Emile Chappuis ,  Francis McNeilly ,  Li Wang ,  Lorne A. Babiuk ,  Andrew A. Potter ,  Philip Willson

Inventor： Deborah Haines ,  Gordon Allan ,  John Ellis ,  Brian Meehan ,  Edward Clark ,  Lori Hassard ,  John Harding ,  Catherine Elisabeth Charreyre ,  Gilles Emile Chappuis ,  Francis McNeilly ,  Li Wang ,  Lorne A. Babiuk ,  Andrew A. Potter ,  Philip Willson

IPC: C12N15/00 ,  A61K39/12

CPC classification number: C07K14/005 ,  A61K38/00 ,  A61K39/00 ,  A61K39/12 ,  A61K48/00 ,  A61K2039/51 ,  A61K2039/53 ,  A61K2039/552 ,  A61K2039/70 ,  C12N7/00 ,  C12N15/86 ,  C12N2750/10022 ,  C12N2750/10034 ,  C12N2750/10043 ,  C12Q1/701

Abstract: The cloning of a novel PCVII viral genome is described as is expression of proteins derived from the PCVII genome. These proteins can be used in vaccine compositions for the prevention and treatment of PCVII infections, as well as in diagnostic methods for determining the presence of PCVII infections in a vertebrate subject. Polynucleotides derived from the viral genome can be used as diagnostic primers and probes.

Abstract translation: 新型PCVII病毒基因组的克隆描述为源自PCVII基因组的蛋白质的表达。 这些蛋白质可用于预防和治疗PCVII感染的疫苗组合物中，以及用于确定脊椎动物受试者中PCVII感染存在的诊断方法。 衍生自病毒基因组的多核苷酸可用作诊断引物和探针。

公开(公告)号：US07829359B2

公开(公告)日：2010-11-09

申请号：US12093512

申请日：2008-03-26

Applicant: Yingwen Tang ,  Li Wang ,  Fengyi Jiang

Inventor： Yingwen Tang ,  Li Wang ,  Fengyi Jiang

IPC: H01L21/00

CPC classification number: H01L33/405 ,  H01L33/0079

Abstract: One embodiment of the present invention provides a method for fabricating a highly reflective electrode in a light-emitting device. During the fabrication process, a multilayer semiconductor structure is fabricated on a growth substrate, wherein the multilayer semiconductor structure includes a first doped semiconductor layer, a second doped semiconductor layer, and/or a multi-quantum-wells (MQW) active layer. The method further includes the followings operations: forming a contact-assist metal layer on the first doped semiconductor layer, annealing the multilayer structure to activate the first doped semiconductor layer, removing the contact-assist metal layer, forming a reflective ohmic-contact metal layer on the first doped semiconductor layer, forming a bonding layer coupled to the reflective ohmic-contact metal layer, bonding the multilayer structure to a conductive substrate, removing the growth substrate, forming a first electrode coupled to the conductive substrate, and forming a second electrode on the second doped semiconductor layer.

Abstract translation: 本发明的一个实施例提供一种在发光器件中制造高反射电极的方法。 在制造过程中，在生长衬底上制造多层半导体结构，其中多层半导体结构包括第一掺杂半导体层，第二掺杂半导体层和/或多量子阱（MQW）有源层。 该方法还包括以下操作：在第一掺杂半导体层上形成接触辅助金属层，退火多层结构以激活第一掺杂半导体层，去除接触辅助金属层，形成反射欧姆接触金属层 在所述第一掺杂半导体层上形成与所述反射欧姆接触金属层耦合的接合层，将所述多层结构接合到导电基板，去除所述生长衬底，形成耦合到所述导电衬底的第一电极，以及形成第二电极 在第二掺杂半导体层上。

公开(公告)号：US07803613B2

公开(公告)日：2010-09-28

申请号：US11485525

申请日：2006-07-12

Applicant: Deborah Haines ,  Gordon Allan ,  John Ellis ,  Brian Meehan ,  Edward Clark ,  Lori Hassard ,  John Harding ,  Catherine Elisabeth Charreyre ,  Gilles Emile Chappuis ,  Francis McNeilly ,  Li Wang ,  Lorne A. Babiuk ,  Andrew A. Potter ,  Philip Willson

Inventor： Deborah Haines ,  Gordon Allan ,  John Ellis ,  Brian Meehan ,  Edward Clark ,  Lori Hassard ,  John Harding ,  Catherine Elisabeth Charreyre ,  Gilles Emile Chappuis ,  Francis McNeilly ,  Li Wang ,  Lorne A. Babiuk ,  Andrew A. Potter ,  Philip Willson

IPC: C12N5/00 ,  A61K39/12

CPC classification number: C07K14/005 ,  A61K38/00 ,  A61K39/00 ,  A61K39/12 ,  A61K48/00 ,  A61K2039/51 ,  A61K2039/53 ,  A61K2039/552 ,  A61K2039/70 ,  C12N7/00 ,  C12N15/86 ,  C12N2750/10022 ,  C12N2750/10034 ,  C12N2750/10043 ,  C12Q1/701

Abstract: The cloning of a novel PCVII viral genome is described as is expression of proteins derived from the PCVII genome. These proteins can be used in vaccine compositions for the prevention and treatment of PCVII infections, as well as in diagnostic methods for determining the presence of PCVII infections in a vertebrate subject. Polynucleotides derived from the viral genome can be used as diagnostic primers and probes.