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    DISPLAY DEVICE
    32.
    发明申请
    DISPLAY DEVICE 有权
    显示设备

    公开(公告)号：US20140210777A1

    公开(公告)日：2014-07-31

    申请号：US14152143

    申请日：2014-01-10

    Applicant: Japan Display Inc.

    Inventor： Keiichi SAITO ,  Hideyuki Takahashi ,  Takashi Nakamura ,  Satoru Tomita ,  Masahiro Tada ,  Hirotaka Hayashi ,  Takashi Okada ,  Yoshiro Aoki ,  Takanori Tsunashima

    IPC: G06F3/041 ,  G06F3/044

    CPC classification number: G06F3/0412 ,  G06F3/0416 ,  G06F3/044

    Abstract: According to one embodiment, a display device includes a display pixel allocated at a matrix state in a display area, an image-reading device which detects strength of capacitive coupling by a dielectric material coming close to or making contact with the display area, and a control portion which controls each transistor of the image-reading device. The image-reading device includes a detection electrode which forms capacitance between the detection electrode and the dielectric material, a pre-charge gate line, a coupling pulse line, a readout gate line, a pre-charge line and a readout line. These lines supply a signal which drives the image-reading device. The image-reading device further includes a pre-charge transistor, an amplification transistor, a readout transistor, a compensation transistor, and a power-source switching transistor.

    Abstract translation: 根据一个实施例，显示装置包括在显示区域中以矩阵状态分配的显示像素，图像读取装置，其通过接近或与显示区域接触的电介质材料来检测电容耦合的强度，以及 控制部分，其控制图像读取装置的每个晶体管。 图像读取装置包括在检测电极和电介质材料之间形成电容的检测电极，预充电栅极线，耦合脉冲线，读出栅极线，预充电线和读出线。 这些线路提供驱动图像读取装置的信号。 图像读取装置还包括预充电晶体管，放大晶体管，读出晶体管，补偿晶体管和电源开关晶体管。

    Detection device
    33.
    发明授权
    Detection device 有权

    公开(公告)号：US12302683B2

    公开(公告)日：2025-05-13

    申请号：US17890642

    申请日：2022-08-18

    Applicant: Japan Display Inc.

    Inventor： Kento Himoto ,  Takashi Nakamura

    IPC: H10K39/32 ,  A61B5/00 ,  G06V10/143 ,  G06V40/12 ,  G06V40/13 ,  G06V40/145

    Abstract: A detection device includes a substrate, a plurality of photodiodes provided on the substrate, a plurality of transistors provided correspondingly to the respective photodiodes, a plurality of gate lines that extend in a first direction, a plurality of signal lines that extend in a second direction intersecting the first direction, a plurality of lower electrodes that are provided between the transistors and the photodiodes in a direction orthogonal to the substrate, and are provided correspondingly to the respective photodiodes, an upper electrode provided so as to extend across the photodiodes, and a reflective layer provided between the substrate and each of the photodiodes in the direction orthogonal to the substrate. Each of the lower electrodes has a smaller area than an area defined by the gate lines and the signal lines, and the reflective layer is provided between the lower electrodes adjacent to each other in a plan view.

    Display device
    36.
    发明授权
    Display device 有权

    公开(公告)号：US10103178B2

    公开(公告)日：2018-10-16

    申请号：US15049385

    申请日：2016-02-22

    Applicant: Japan Display Inc.

    Inventor： Masahiro Tada ,  Takashi Nakamura

    IPC: H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L33/00 ,  G02F1/1333 ,  H01L21/00 ,  H01L21/84 ,  H01L27/12 ,  H01L27/32 ,  H01L29/786

    Abstract: A display device according to one embodiment, includes a thin-film transistor. The thin-film transistor includes a semiconductor layer including a channel region, first and second high-concentration impurity regions on both sides of the channel region, low-concentration impurity regions on both sides of the channel region, gate electrodes, first and second electrodes, and a light-shielding electrode opposing the channel region and the entire first high-concentration impurity region via an insulating layer, to produce a capacitance between itself and the first high-concentration impurity region.

    Display device and display device provided with sensor
    37.
    发明授权
    Display device and display device provided with sensor 有权

    公开(公告)号：US09891748B2

    公开(公告)日：2018-02-13

    申请号：US15059450

    申请日：2016-03-03

    Applicant: Japan Display Inc.

    Inventor： Takashi Nakamura ,  Masahiro Tada ,  Takanori Tsunashima ,  Hirotaka Hayashi ,  Kazuhide Mochizuki

    IPC: G06F3/041 ,  G06F3/044

    CPC classification number: G06F3/0416 ,  G06F3/0412 ,  G06F3/044

    Abstract: According to one embodiment, a display device includes plural display pixels arranged in a matrix, plural gate lines, plural source lines and a control circuit which controls by applying intermittent driving and a column-inversion drive scheme, an operation in which drive signals are supplied to the gate lines and the source lines, and an image signal is supplied to the display pixels and held thereby, wherein the display pixels each include a liquid crystal in which alignment of liquid crystal molecules is changed by a voltage between pixel electrodes and a common electrode, and the control circuit applies in a signal stop period in the intermittent driving, a voltage corresponding to a gradation higher than or equal to white gradation to the source lines in a case where a display mode of the liquid crystal is a normally-black mode.

    Thin film semiconductor device
    40.
    发明授权
    Thin film semiconductor device 有权
    薄膜半导体器件

    公开(公告)号：US09536907B2

    公开(公告)日：2017-01-03

    申请号：US14734253

    申请日：2015-06-09

    Applicant: Japan Display Inc.

    Inventor： Masahiro Tada ,  Takashi Nakamura

    IPC: H01L29/786 ,  H01L27/12

    CPC classification number: H01L27/124 ,  H01L29/78609 ,  H01L29/78633 ,  H01L29/78645 ,  H01L29/78675

    Abstract: According to one embodiment, provided is a thin film transistor with which it is possible to reduce the leakage current and thereby, for a liquid crystal display device, to ensure a good display quality. The thin film transistor includes a semiconductor layer, gate electrodes, first light-blocking electrodes, and second light-blocking electrodes. The first light-blocking electrodes are disposed opposite to the gate electrodes with respect to the semiconductor layer and opposed to channel regions to block light incident into the channel regions. The second light-blocking electrodes are disposed opposite to the semiconductor layer with respect to the gate electrodes, arranged to block light incident into the channel regions, and electrically connected with one of a signal line and a pixel electrode.

    Abstract translation: 根据一个实施例，提供了一种薄膜晶体管，通过该薄膜晶体管可以减小漏电流，从而可以降低液晶显示装置，以确保良好的显示质量。 薄膜晶体管包括半导体层，栅电极，第一遮光电极和第二遮光电极。 第一遮光电极相对于半导体层与栅电极相对设置，并且与沟道区相对，以阻挡入射到沟道区的光。 第二遮光电极相对于栅电极与半导体层相对配置，被布置成阻挡入射到沟道区中的光，并且与信号线和像素电极之一电连接。

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