公开(公告)号：US09377679B2

公开(公告)日：2016-06-28

申请号：US14418629

申请日：2013-07-27

Applicant: HOYA CORPORATION

Inventor： Kazuhiro Hamamoto ,  Tatsuo Asakawa ,  Osamu Maruyama ,  Tsutomu Shoki

IPC: G03F1/24 ,  G03F1/48

CPC classification number: G03F1/24 ,  G03F1/48

Abstract: This invention provides a reflective mask blank capable of preventing peeling-off of a multilayer reflective film due to cleaning or the like in a mask manufacturing process or during mask use. The reflective mask blank includes a multilayer reflective film, a protective film, an absorber film, and a resist film formed in this order on a substrate. Assuming that a distance from the center of the substrate to an outer peripheral end of the multilayer reflective film is L(ML), that a distance from the center of the substrate to an outer peripheral end of the protective film is L(Cap), that a distance from the center of the substrate to an outer peripheral end of the absorber film is L(Abs), and that a distance from the center of the substrate to an outer peripheral end of the resist film is L(Res), L(Abs)>L(Res)>L(Cap)≧L(ML) and the outer peripheral end of the resist film is located inward of an outer peripheral end of the substrate.

Abstract translation: 本发明提供了一种能够防止在掩模制造工艺中或在掩模使用期间由于清洁等而剥离多层反射膜的反射掩模板。 反射掩模坯料包括在基板上依次形成的多层反射膜，保护膜，吸收膜和抗蚀剂膜。 假设从基板的中心到多层反射膜的外周端的距离为L（ML），则从基板的中心到保护膜的外周端的距离为L（Cap）， 从基板的中心到吸收膜的外周端的距离为L（Abs），并且从基板的中心到抗蚀剂膜的外周端的距离为L（Res），L （Ab）> L（Res）> L（Cap）≥L（ML），并且抗蚀剂膜的外周端位于衬底的外周端的内侧。

公开(公告)号：US20150079501A1

公开(公告)日：2015-03-19

申请号：US14369414

申请日：2013-03-21

Applicant: HOYA CORPORATION

Inventor： Tsutomu Shoki ,  Kazuhiro Hamamoto

IPC: G03F1/42 ,  G03F1/24

CPC classification number: G03F1/24 ,  G03F1/42 ,  G03F1/80

Abstract: Disclosed is a method for producing a substrate with a multilayer reflective film for EUV lithography including a multilayer reflective film disposed on a principal surface of a substrate, the method including a multilayer reflective film formation step of forming the multilayer reflective film on the principal surface of the substrate in such a manner that the multilayer reflective film has a slope region in which the film thickness is decreased in a direction from the inside to the outside of the substrate on a peripheral portion of the principal surface, and a fiducial mark formation step of forming fiducial marks in the slope region by removing at least a portion of the multilayer reflective film, the fiducial marks serving as references for a defective location indicated by defect information with respect to the surface of the substrate with the multilayer reflective film.

Abstract translation: 公开了一种用于制造具有用于EUV光刻的多层反射膜的基板的方法，其包括设置在基板的主表面上的多层反射膜，该方法包括：多层反射膜形成步骤，在多层反射膜的主表面上形成多层反射膜 基板，使得多层反射膜具有在主表面的周边部分上从基板的内侧向外侧的方向上的膜厚度减小的倾斜区域，以及基板的基准标记形成步骤 通过去除多层反射膜的至少一部分来形成斜坡区域中的基准标记，所述基准标记作为相对于具有所述多层反射膜的所述基板的表面的缺陷信息指示的缺陷位置的参考。

公开(公告)号：US12111566B2

公开(公告)日：2024-10-08

申请号：US18483453

申请日：2023-10-09

Applicant: HOYA CORPORATION

Inventor： Yohei Ikebe ,  Tsutomu Shoki

IPC: G03F1/32 ,  G03F1/24 ,  G03F7/20

CPC classification number: G03F1/32 ,  G03F1/24 ,  G03F7/2004

Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that the phase-shift film has a thin film comprising a metal-containing material that contains: ruthenium (Ru); and at least one element from among chromium (Cr), nickel (Ni), (Co), aluminum (Al), silicon (Si), titanium (Ti), vanadium (V), germanium (Ge), niobium (Nb), molybdenum (Mo), tin (Sn), tellurium (Te), hafnium (Hf), tungsten (W), and rhenium (Re).

公开(公告)号：US12019366B2

公开(公告)日：2024-06-25

申请号：US17603529

申请日：2020-06-18

Applicant: HOYA CORPORATION

Inventor： Masanori Nakagawa ,  Tsutomu Shoki

IPC: G03F1/24 ,  G03F1/46

CPC classification number: G03F1/24 ,  G03F1/46

Abstract: Provided is a reflective mask blank for manufacturing a reflective mask capable of suppressing peeling of an absorber pattern when EUV exposure is performed in an atmosphere comprising a hydrogen gas.
A reflective mask blank comprises: a substrate; a multilayer reflective film on the substrate; and an absorber film on the multilayer reflective film. The absorber film comprises an absorption layer and a reflectance adjustment layer. The absorption layer comprises tantalum (Ta), boron (B), nitrogen (N), and at least one additive element selected from hydrogen (H) and deuterium (D). A content of the boron (B) in the absorption layer is more than 5 atomic %. A content of the additive element in the absorption layer is 0.1 atomic % or more and 30 atomic % or less.

公开(公告)号：US11880130B2

公开(公告)日：2024-01-23

申请号：US17946709

申请日：2022-09-16

Applicant: HOYA CORPORATION

Inventor： Yohei Ikebe ,  Tsutomu Shoki ,  Takahiro Onoue ,  Hirofumi Kozakai

IPC: G03F1/24 ,  G03F1/26

CPC classification number: G03F1/24 ,  G03F1/26

Abstract: Provided are a reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask. The reflective mask blank is characterized in that the phase shift film is composed of a material comprised of an alloy having two or more types of metal so that reflectance of the surface of the phase shift film is more than 3% to not more than 20% and so as to have a phase difference of 170 degrees to 190 degrees, and when a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k>α*n+β is defined as Group A and a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k

公开(公告)号：US11815806B2

公开(公告)日：2023-11-14

申请号：US17990049

申请日：2022-11-18

Applicant: HOYA CORPORATION

Inventor： Yohei Ikebe ,  Tsutomu Shoki

IPC: G03F1/32 ,  G03F1/24 ,  G03F7/20

CPC classification number: G03F1/32 ,  G03F1/24 ,  G03F7/2004

Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that the phase-shift film has a thin film comprising a metal-containing material that contains: ruthenium (Ru); and at least one element from among chromium (Cr), nickel (Ni), (Co), aluminum (Al), silicon (Si), titanium (Ti), vanadium (V), germanium (Ge), niobium (Nb), molybdenum (Mo), tin (Sn), tellurium (Te), hafnium (Hf), tungsten (W), and rhenium (Re).

公开(公告)号：US11281090B2

公开(公告)日：2022-03-22

申请号：US16754306

申请日：2018-10-16

Applicant: HOYA CORPORATION

Inventor： Kazuhiro Hamamoto ,  Tsutomu Shoki ,  Yohei Ikebe

IPC: G03F1/24 ,  G03F1/42

Abstract: A substrate with a multilayer reflective film, a reflective mask blank, a reflective mask and a method of manufacturing a semiconductor device can prevent contamination of the surface of the multilayer reflective film even in the case of having formed reference marks on the multilayer reflective film. A substrate with a multilayer reflective film contains a substrate, a multilayer reflective film that reflects EUV light formed on the substrate, and a protective film formed on the multilayer reflective film. Reference marks are formed to a concave shape on the surface of the protective film. A surface layer of the reference marks contains an element that is the same as at least one of the elements contained in the protective film. A shrink region, where at least a portion of the plurality of films contained in the multilayer reflective film are shrunk, is formed at the bottom of the reference marks.

公开(公告)号：US11262647B2

公开(公告)日：2022-03-01

申请号：US16756727

申请日：2018-10-16

Applicant: HOYA CORPORATION

Inventor： Kazuhiro Hamamoto ,  Tsutomu Shoki

IPC: G03F1/24 ,  G03F1/42 ,  G03F7/20

Abstract: A substrate with a multilayer reflective film, a reflective mask blank, a reflective mask and a method of manufacturing a semiconductor device that can prevent contamination of the surface of the multilayer reflective film even in the case of having formed reference marks on the multilayer reflective film. A substrate with a multilayer reflective film contains a substrate and a multilayer reflective film that reflects EUV light formed on the substrate. Reference marks are formed to a concave shape on the surface of the substrate with the multilayer reflective film. The reference marks have grooves or protrusions roughly in the center. The shape of the grooves or protrusions when viewed from overhead is similar or roughly similar to the shape of the reference marks.

公开(公告)号：US11187972B2

公开(公告)日：2021-11-30

申请号：US16343505

申请日：2017-10-18

Applicant: HOYA CORPORATION

Inventor： Yohei Ikebe ,  Tsutomu Shoki

IPC: G03F1/24 ,  G03F7/20

Abstract: The present invention provides a reflective mask blank and reflective mask capable of reducing the shadowing effect of EUV lithography and forming a fine pattern. As a result, a semiconductor device can be more stably manufactured with high transfer accuracy. The reflective mask blank comprises a multilayer reflective film, an absorber film and an etching mask film on a substrate in that order, wherein the absorber film is made of a material containing nickel (Ni), and the etching mask film is made of a material containing chromium (Cr) or a material containing silicon (Si).

公开(公告)号：US10996554B2

公开(公告)日：2021-05-04

申请号：US16796395

申请日：2020-02-20

Applicant: HOYA CORPORATION

Inventor： Takumi Kobayashi ,  Kazuhiro Hamamoto ,  Tatsuo Asakawa ,  Tsutomu Shoki

IPC: G03F1/40 ,  G03F1/24 ,  G03F1/54

Abstract: A substrate with an electrically conductive film for fabricating a reflective mask is obtained that is capable of preventing positional shift of the reflective mask during pattern transfer. Provided is a substrate with an electrically conductive film used in lithography, the substrate with an electrically conductive film having an electrically conductive film formed on one of the main surfaces of a mask blank substrate, and a coefficient of static friction of the surface of the electrically conductive film is not less than 0.25.