公开(公告)号：US20190163047A1

公开(公告)日：2019-05-30

申请号：US16318216

申请日：2017-06-22

Applicant: HOYA CORPORATION

Inventor： Takenori KAJIWARA ,  Ryo OHKUBO ,  Hiroaki SHISHIDO ,  Osamu NOZAWA

IPC: G03F1/32 ,  G03F1/80 ,  G03F1/74 ,  H01L21/033

Abstract: A mask blank having fast repair rate of EB defect repair and high repair rate ratio to EB defect repair relative to a transparent substrate that includes a phase shift film on a transparent substrate, the phase shift film has a structure including three sets or more of a set of a stacked structure including a high transmitting layer and a low transmitting layer, the high transmitting layer and the low transmitting layer are made of a material consisting of silicon and nitrogen, or a material consisting of silicon, nitrogen, oxygen, and one or more elements selected from a metalloid element and a non-metallic element, the high transmitting layer includes 50 atom % or more nitrogen content and has a thickness of 12 nm or less, and the low transmitting layer includes less than 50 atom % nitrogen content and has a thickness less than the high transmitting layer.

公开(公告)号：US20190146327A1

公开(公告)日：2019-05-16

申请号：US16201344

申请日：2018-11-27

Applicant: HOYA CORPORATION

Inventor： Osamu NOZAWA ,  Hiroaki SHISHIDO ,  Kazuya SAKAI

IPC: G03F1/32 ,  H01L21/027 ,  G03F1/26 ,  G03F7/20

Abstract: Provided is a mask blank in which uniformity of the composition and optical characteristics of a phase-shift film in the in-plane direction and direction of film thickness is high, uniformity of the composition and optical characteristics of the phase-shift film between a plurality of substrates is also high, and defectivity is low even if a silicon-based material is applied to the material that forms the phase-shift film.A mask blank is provided in which a phase-shift film is provided on a transparent substrate, the phase-shift film having a function to transmit ArF exposure light therethrough at a predetermined transmittance and generate a predetermined amount of phase shift in the ArF exposure light that is transmitted therethrough, wherein the phase-shift film comprises a structure in which a low transmission layer and a high transmission layer are laminated, the low transmission layer and the high transmission layer are formed from a material consisting of silicon and nitrogen or a material consisting of silicon, nitrogen and one or more elements selected from semi-metallic elements, non-metallic elements and noble gases, and the low transmission layer has a relatively low nitrogen content in comparison with the high transmission layer.

公开(公告)号：US20190004419A1

公开(公告)日：2019-01-03

申请号：US16125900

申请日：2018-09-10

Applicant: HOYA CORPORATION

Inventor： Osamu NOZAWA ,  Ryo Ohkubo ,  Hiroaki Shishido ,  Yasushi Okubo

IPC: G03F1/42 ,  G03F7/20 ,  G03F1/48 ,  G03F1/32 ,  C23C14/06 ,  G03F1/80 ,  C23C14/34

Abstract: A mask blank is provided, by which an alignment mark can be formed between a transparent substrate and a laminated structure of a light semitransmissive film, etching stopper film, and light shielding film during manufacture of a transfer mask. The mask blank 100 comprises a structure in which the light semitransmissive film 2, etching stopper film 3, light shielding film 4, and etching mask film 5 are laminated in said order on the transparent substrate 1; the light semitransmissive film 2 and light shielding film 3 are made of a material which can be dry etched with a fluorine-based gas; the etching stopper film and etching mask film are made of a material containing chromium; and when a thickness of the etching stopper film is Ds, an etching rate of the etching stopper film with respect to an oxygen-containing chlorine-based gas is Vs, a thickness of the etching mask film is Dm, and an etching rate of the etching mask film with respect to the oxygen-containing chlorine-based gas is Vm, a relationship: (Dm/Vm)>(Ds/Vs) is satisfied.

公开(公告)号：US20180149961A1

公开(公告)日：2018-05-31

申请号：US15576937

申请日：2016-09-27

Applicant: HOYA CORPORATION

Inventor： Osamu NOZAWA ,  Takenori KAJIWARA ,  Hiroaki SHISHIDO

IPC: G03F1/32

CPC classification number: G03F1/32 ,  G03F1/54

Abstract: A mask blank with a phase shift film and a light shielding film, laminated on a transparent substrate. The phase shift film transmits ArF exposure light at a transmittance (τ) 2%≥τ≤30% and generates a phase difference (ΔΦ) of 150°≥ΔΦ≤200°, and is formed from a material containing Si and not substantially containing Cr, and has a lower layer (L) and an upper layer (U) laminated from the transparent substrate side. A refractive index n for layer L is below the transparent substrate while n for layer U is higher, and the layer L has an extinction coefficient k higher than layer U. The light shielding film includes a layer in contact with the phase shift film that is formed from a material containing Cr, has a n lower than layer U, and has an extinction coefficient k higher than layer U.

公开(公告)号：US20180031963A1

公开(公告)日：2018-02-01

申请号：US15554335

申请日：2016-01-19

Applicant: HOYA CORPORATION

Inventor： Atsushi KOMINATO ,  Osamu NOZAWA

IPC: G03F1/32 ,  H01L21/027 ,  G03F7/20

CPC classification number: G03F1/32 ,  C23C14/06 ,  C23C14/0676 ,  C23C14/5806 ,  G03F1/54 ,  G03F1/74 ,  G03F7/2006 ,  H01L21/0275

Abstract: A mask blank including a phase shift film is provided, wherein the phase shift film has a predetermined transmittance and a predetermined phase difference with respect to exposure light of an ArF excimer laser, and it is relatively easy to detect an etching end point for detecting a boundary between the phase shift film and a transparent substrate upon the EB defect repair.The phase shift film has a function to transmit the exposure light of the ArF excimer laser at a transmittance of not less than 10% and not more than 20%, and a function to generate a phase difference of not less than 150 degrees and not more than 190 degrees between the exposure light transmitted through the phase shift film and the exposure light transmitted through the air for the same distance as a thickness of the phase shift film. The phase shift film is made of a material containing a metal, silicon, nitrogen, and oxygen. A ratio of the metal content to the total content of the metal and silicon in the phase shift film is not less than 5% and not more than 10%, the oxygen content in the phase shift film is 10 atom % or more, and the silicon content in the phase shift film is three times or more the oxygen content.

公开(公告)号：US20170285458A1

公开(公告)日：2017-10-05

申请号：US15503415

申请日：2015-10-07

Applicant: HOYA CORPORATION

Inventor： Hiroaki SHISHIDO ,  Osamu NOZAWA ,  Takenori KAJIWARA

IPC: G03F1/32 ,  G03F1/58 ,  G03F1/80 ,  G03F7/20 ,  H01L21/027 ,  C23C14/00 ,  C23C14/06 ,  C23C14/18 ,  C23C14/10 ,  G03F7/34 ,  C23C14/34

CPC classification number: G03F1/32 ,  C23C14/0057 ,  C23C14/06 ,  C23C14/0641 ,  C23C14/0664 ,  C23C14/0676 ,  C23C14/10 ,  C23C14/185 ,  C23C14/3407 ,  C23C14/3464 ,  C23C14/5806 ,  C23C14/584 ,  G03F1/58 ,  G03F1/80 ,  G03F7/2006 ,  G03F7/34 ,  H01L21/027

Abstract: A mask blank with phase shift film where changes in transmittance and phase shift to an exposure light of an ArF excimer laser are suppressed. The film transmits light of an ArF excimer laser at a transmittance of 2% or more and less than 10% and generates a phase difference of 150 degrees or more and 190 degrees or less between the exposure light transmitted through the phase shift film and the exposure light transmitted through the air for the same distance as a thickness of the phase shift film. The film has a stacked lower layer and upper layer, the lower layer containing metal and silicon and substantially free of oxygen. The upper layer containing metal, silicon, nitrogen, and oxygen. The lower layer is thinner than the upper layer, and the ratio of metal to metal and silicon of the upper layer is less than the lower layer.

公开(公告)号：US20160041464A1

公开(公告)日：2016-02-11

申请号：US14920072

申请日：2015-10-22

Applicant: HOYA CORPORATION

Inventor： Masahiro HASHIMOTO ,  Atsushi KOMINATO ,  Hiroyuki IWASHITA ,  Osamu NOZAWA

IPC: G03F1/74 ,  G03F1/80 ,  G03F1/50

CPC classification number: G03F1/74 ,  G03F1/50 ,  G03F1/54 ,  G03F1/80

Abstract: Provided is a mask blank which enables EB defect correction to be suitably applied and which further enables a reduction in the thickness of a light-shielding film. A mask blank 10 is used for producing a transfer mask adapted to be applied with ArF exposure light and has a light-shielding film 2 on a transparent substrate 1. The light-shielding film 2 is composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen. An etching rate of the light-shielding film by a fluorine-containing substance in a state of not being irradiated with charged particles is low enough to at least ensure etching selectivity with respect to an etching rate of the light-shielding film by the fluorine-containing substance in a state of being irradiated with the charged particles.

Abstract translation: 提供了能够适当地应用EB缺陷校正的掩模坯料，并且还能够减少遮光膜的厚度。 掩模坯料10用于制造适于施加ArF曝光光的转印掩模，并且在透明基板1上具有遮光膜2.遮光膜2主要由含有过渡金属的材料构成， 硅和选自氧和氮的至少一种或多种元素。 在不被带电粒子照射的状态下，通过含氟物质的遮光膜的蚀刻速度低到至少确保相对于由氟系物形成的遮光膜的蚀刻速度的蚀刻选择性， 在被照射带电粒子的状态下含有物质。

公开(公告)号：US20250053077A1

公开(公告)日：2025-02-13

申请号：US18711293

申请日：2022-11-25

Applicant: HOYA CORPORATION

Inventor： Osamu NOZAWA ,  Yasutaka HORIGOME

IPC: G03F1/50 ,  H01L21/027

Abstract: Provided is a mask blank having a structure in which a pattern-forming thin film, a first hard mask film, and a second hard mask film are stacked in this order on a main surface of a substrate. The pattern-forming thin film contains at least one element selected from silicon and transition metals. The first hard mask film contains chromium. The second hard mask film contains tantalum. The tantalum of the second hard mask film contains tantalum that is unsaturated with oxygen. The thickness of the pattern-forming thin film is 20 nm or more. The thickness of the first hard mask film is 15 nm or less. The thickness of the second hard mask film is 10 nm or less.

公开(公告)号：US20250044677A1

公开(公告)日：2025-02-06

申请号：US18918951

申请日：2024-10-17

Applicant: HOYA CORPORATION

Inventor： Hiroaki SHISHIDO ,  Ryo OHKUBO ,  Osamu NOZAWA

IPC: G03F1/32

Abstract: The present invention addresses the problem of providing a mask blank that makes it possible to further miniaturize a mask pattern or a hard mask pattern and improving the pattern quality, and to resolve this problem, a mask blank (100) has a structure in which a thin film (3) for pattern formation and a hard mask film (4) are laminated in this order on a transparent substrate (1), wherein the hard mask film (4) is configured so that a narrow spectrum of Si2p obtained by analysis by X-ray photoelectron spectroscopy has a maximum peak at a binding energy of 103 eV or more, a maximum peak of a narrow spectrum of N1s obtained by analysis by X-ray photoelectron spectroscopy is equal to or less than a detection lower limit value, and the content ratio (atomic %) of silicon and oxygen is less than Si:O=1:2.

公开(公告)号：US20230314929A1

公开(公告)日：2023-10-05

申请号：US18114452

申请日：2023-02-27

Applicant: HOYA CORPORATION

Inventor： Hitoshi MAEDA ,  Osamu NOZAWA

IPC: G03F1/32 ,  G03F1/54

CPC classification number: G03F1/32 ,  G03F1/54

Abstract: A mask blank comprises: a light-transmissive substrate; and a phase shift film formed on the light-transmissive substrate, in which the phase shift film includes a lower layer containing hafnium and oxygen and an upper layer formed on the lower layer and containing silicon, oxygen, and nitrogen, a total content of hafnium and oxygen in the lower layer is 95 atom % or more, and a content of nitrogen in the upper layer is 15 atom % or more.