公开(公告)号：US20140322634A1

公开(公告)日：2014-10-30

申请号：US14328201

申请日：2014-07-10

Applicant: HOYA CORPORATION

Inventor： Atsushi KOMINATO ,  Osamu NOZAWA ,  Hiroyuki IWASHITA ,  Masahiro HASHIMOTO

IPC: G03F1/50

CPC classification number: G03F1/50 ,  G03F1/58

Abstract: A mask blank for manufacturing a transfer mask adapted to be applied with ArF excimer laser exposure light that has a transparent substrate and a light-shielding film formed into a transfer pattern. The light-shielding film has at least two-layers, one a lower layer composed mainly of a first material containing a transition metal, silicon, and nitrogen, and the other an upper layer composed mainly of a second material containing a transition metal, silicon, and nitrogen. A ratio of a first etching rate of the lower layer to a second etching rate of the upper layer is 1.0 or more and 5.0 or less in etching carried out by supplying a fluorine-containing substance onto a target portion and irradiating charged particles to the target portion. Another ratio satisfies the following formula CN≧−0.00526CMo2−0.640CMo+26.624.

Abstract translation: 用于制造适于施加有形成为转印图案的透明基板和遮光膜的ArF准分子激光曝光光的转印掩模的掩模坯料。 遮光膜具有至少两层，一层主要由含有过渡金属，硅和氮的第一材料构成的下层，另一层是主要由含有过渡金属的第二材料构成的上层，硅 ，和氮气。 在通过向目标部分供给含氟物质并将带电粒子照射到目标物上的蚀刻中，下层的第一蚀刻速率与上层的第二蚀刻速率之比为1.0以上且5.0以下 一部分。 另一比例满足下列公式CN≧-0.00526CMo2-0.640CMo + 26.624。

公开(公告)号：US20190187551A1

公开(公告)日：2019-06-20

申请号：US16327716

申请日：2017-08-02

Applicant: HOYA CORPORATION

Inventor： Hiroyuki IWASHITA ,  Atsushi MATSUMOTO ,  Osamu NOZAWA

IPC: G03F1/32 ,  G03F1/58 ,  H01L21/3065 ,  G03F1/00 ,  G03F1/80

CPC classification number: G03F1/32 ,  G03F1/144 ,  G03F1/26 ,  G03F1/58 ,  G03F1/80 ,  H01L21/3065

Abstract: Provided is a mask blank including a phase shift film having a transmittance of 20% or more difficult to achieve in a phase shift film of a single layer made of a silicon nitride material, and the phase shift film is achieved by using a structure having two or more sets of a stacked structure, each set including a low transmission layer and a high transmission layer disposed in order from a transparent substrate side.The mask blank includes a phase shift film on a transparent substrate. The phase shift film has a function of transmitting exposure light of an ArF excimer laser at a transmittance of 20% or more. The mask blank has two or more sets of a stacked structure, each set including a low transmission layer and a high transmission layer. The low transmission layer is formed of a silicon nitride-based material. The high transmission layer is formed of a silicon oxide-based material. The high transmission layer provided at an uppermost position is thicker than the high transmission layer provided at a position other than the uppermost position. The low transmission layer is thicker than the high transmission layer provided at a position other than the uppermost position.

公开(公告)号：US20160041464A1

公开(公告)日：2016-02-11

申请号：US14920072

申请日：2015-10-22

Applicant: HOYA CORPORATION

Inventor： Masahiro HASHIMOTO ,  Atsushi KOMINATO ,  Hiroyuki IWASHITA ,  Osamu NOZAWA

IPC: G03F1/74 ,  G03F1/80 ,  G03F1/50

CPC classification number: G03F1/74 ,  G03F1/50 ,  G03F1/54 ,  G03F1/80

Abstract: Provided is a mask blank which enables EB defect correction to be suitably applied and which further enables a reduction in the thickness of a light-shielding film. A mask blank 10 is used for producing a transfer mask adapted to be applied with ArF exposure light and has a light-shielding film 2 on a transparent substrate 1. The light-shielding film 2 is composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen. An etching rate of the light-shielding film by a fluorine-containing substance in a state of not being irradiated with charged particles is low enough to at least ensure etching selectivity with respect to an etching rate of the light-shielding film by the fluorine-containing substance in a state of being irradiated with the charged particles.

Abstract translation: 提供了能够适当地应用EB缺陷校正的掩模坯料，并且还能够减少遮光膜的厚度。 掩模坯料10用于制造适于施加ArF曝光光的转印掩模，并且在透明基板1上具有遮光膜2.遮光膜2主要由含有过渡金属的材料构成， 硅和选自氧和氮的至少一种或多种元素。 在不被带电粒子照射的状态下，通过含氟物质的遮光膜的蚀刻速度低到至少确保相对于由氟系物形成的遮光膜的蚀刻速度的蚀刻选择性， 在被照射带电粒子的状态下含有物质。

公开(公告)号：US20140057199A1

公开(公告)日：2014-02-27

申请号：US13944251

申请日：2013-07-17

Applicant: HOYA CORPORATION

Inventor： Hiroyuki IWASHITA ,  Hiroaki Shishido ,  Atsushi Kominato ,  Masahiro Hashimoto ,  Morio Hosoya

IPC: G03F1/22 ,  H01L21/027

CPC classification number: G03F1/22 ,  G03F1/46 ,  G03F1/54 ,  G03F1/80 ,  H01L21/0274

Abstract: A photomask blank for producing a photomask to which an ArF excimer laser light is applied. The blank includes a light transmissive substrate on which a thin film having a multilayer structure is provided. The thin film has a light-shielding film in which a back-surface antireflection layer, a light-shielding layer and a front-surface antireflection layer are laminated in this order. The light-shielding layer comprises chromium and nitrogen, and the chromium content is more than 50 atomic %. The front-surface antireflection layer and the back-surface antireflection layer each has an amorphous structure made of a material comprising chromium, nitrogen, oxygen and carbon. The chromium content ratio of the front-surface antireflection layer and the back-surface antireflection layer is 40 atomic % or less. A first sum of nitrogen content and oxygen content of the back-surface antireflection layer is less than a second sum of nitrogen content and oxygen content of the front-surface antireflection layer.

Abstract translation: 一种用于制造施加了ArF准分子激光的光掩模的光掩模坯料。 该坯料包括其上设置有多层结构的薄膜的透光基板。 该薄膜具有依次层叠有背面防反射层，遮光层和前表面防反射层的遮光膜。 遮光层包含铬和氮，铬含量大于50原子％。 前表面抗反射层和背面防反射层各自具有由包含铬，氮，氧和碳的材料制成的非晶结构。 前表面抗反射层和背面防反射层的铬含量比例为40原子％以下。 背面防反射层的氮含量和氧含量的第一个总和小于前表面抗反射层的氮含量和氧含量的第二和。

公开(公告)号：US20140087292A1

公开(公告)日：2014-03-27

申请号：US14094467

申请日：2013-12-02

Applicant: HOYA CORPORATION

Inventor： Masahiro HASHIMOTO ,  Atsushi KOMINATO ,  Hiroyuki IWASHITA ,  Osamu NOZAWA

IPC: G03F1/50 ,  G03F1/80

CPC classification number: G03F1/74 ,  G03F1/50 ,  G03F1/54 ,  G03F1/80

Abstract: Provided is a mask blank which enables EB defect correction to be suitably applied and which further enables a reduction in the thickness of a light-shielding film. A mask blank 10 is used for producing a transfer mask adapted to be applied with ArF exposure light and has a light-shielding film 2 on a transparent substrate 1. The light-shielding film 2 is composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen. An etching rate of the light-shielding film by a fluorine-containing substance in a state of not being irradiated with charged particles is low enough to at least ensure etching selectivity with respect to an etching rate of the light-shielding film by the fluorine-containing substance in a state of being irradiated with the charged particles.

Abstract translation: 提供了能够适当地应用EB缺陷校正的掩模坯料，并且还能够减少遮光膜的厚度。 掩模坯料10用于制造适于施加ArF曝光光的转印掩模，并且在透明基板1上具有遮光膜2.遮光膜2主要由含有过渡金属的材料构成， 硅和选自氧和氮的至少一种或多种元素。 在不被带电粒子照射的状态下，通过含氟物质的遮光膜的蚀刻速度低至少能够确保相对于由氟系物形成的遮光膜的蚀刻速度的蚀刻选择性， 在被照射带电粒子的状态下含有物质。