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公开(公告)号：US20180012908A1
公开(公告)日：2018-01-11
申请号：US15712265
申请日：2017-09-22
Applicant: FUJIFILM Corporation
Inventor： Yoshihisa USAMI
CPC classification number: H01L27/124 , G02F1/1345 , G02F1/1368 , G09F9/00 , G09F9/30 , G09G3/20 , G09G3/2092 , G09G3/3208 , G09G3/3611 , G09G2300/0404 , G09G2300/0426 , G09G2310/0205 , G09G2310/0218 , G09G2310/0297 , H01L27/1262 , H01L27/283
Abstract: In a matrix device having two or more systems of electrode groups such as X and Y systems, the one or more electrode groups are grouped into groups each consisting of a plurality of pixel electrodes, connection wires are branched off and connected to the pixel electrodes so that the same signal is not supplied to the pixel electrodes of the same group but the same signal is supplied to one pixel electrode of two or more groups, switching elements are provided corresponding to the individual pixel electrodes, and a gate electrode and a gate insulating film of the switching elements are used in common in the same group. Accordingly, in the matrix device and manufacturing of the matrix device, the number of connection wires and driver ICs is reduced.
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公开(公告)号：US20170315222A1
公开(公告)日：2017-11-02
申请号：US15648682
申请日：2017-07-13
Applicant: FUJIFILM Corporation
Inventor： Seigo NAKAMURA , Yoshihisa USAMI
CPC classification number: G01S13/42 , A61B5/107 , G01R29/08 , H01L51/107 , H01L51/448 , H01L51/5253 , H04L5/0035 , H04L5/0048 , H04L5/0073 , H04L27/2655 , H05B33/04 , Y02E10/549
Abstract: After an electroconductive projection is formed on an electrode of an electronic element, a gas barrier film on which an adhesive layer and a contact hole are formed is laminated and pressure-bonded onto a substrate on which the electronic element is formed. Alternatively, after a gas barrier film on which an adhesive layer and a contact hole are formed is laminated on a substrate on which an electronic element is formed and an electroconductive projection is formed on the electrode inside the contact hole, the substrate and the gas barrier film are pressure-bonded to each other, and the contact hole is filled with an electroconductive material. In this manner, there are provided a method of manufacturing an electronic device; and an electronic device to which a take-out wire used to reliably connect the electronic device to an external device using a small contact hole can be connected even in a case where the electronic device is small.
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公开(公告)号：US20160356635A1
公开(公告)日：2016-12-08
申请号：US15244429
申请日：2016-08-23
Applicant: FUJIFILM CORPORATION
Inventor： Yoshihisa USAMI
IPC: G01D18/00
CPC classification number: G01D18/00 , G01D21/00 , H04Q9/00 , H04Q2209/40 , H04Q2209/70 , H04W84/18
Abstract: A sensing system includes: a sensor tag including a sensor that measures a physical quantity or a chemical quantity, a memory that stores an expiration date and a correction coefficient value of the sensor, and individual recognition information, and a transmission unit that transmits a measurement value of the sensor and the individual recognition information to the calculator; a center including a storage unit that stores an accurate expiration date and an accurate correction coefficient value for each piece of individual recognition information, and a transmission unit that transmits the accurate expiration date and coefficient value depending on the individual recognition information to the calculator; and a calculator including a transmission unit that transmits the individual recognition information to the center, a reception unit that receives the individual recognition information, the measurement value, and the accurate expiration date and correction coefficient value, a determination unit that determines whether the accurate expiration date from the center has elapsed, and a processing unit that corrects the measurement value using the correction coefficient value.
Abstract translation: 感测系统包括：包括测量物理量或化学物质的传感器的传感器标签，存储传感器的到期日期和校正系数值的存储器以及个体识别信息，以及发送单元， 传感器的值和个体识别信息到计算器; 包括存储单元的中心，其存储每个单独的识别信息的准确的到期日期和精确的校正系数值;以及发送单元，其根据个体识别信息将准确的到期日期和系数值发送到计算器; 以及计算器，包括将各个识别信息发送到中心的发送单元，接收单独的识别信息的接收单元，测量值和准确的有效期限和校正系数值;确定单元，确定准确到期 已经过去了中心的日期，以及使用校正系数值来校正测量值的处理单元。
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34.发明申请METHOD OF FORMING ORGANIC SEMICONDUCTOR FILM AND ORGANIC SEMICONDUCTOR FILM FORMING DEVICE 审中-公开形成有机半导体膜和有机半导体膜形成装置的方法公开(公告)号：US20160336512A1
公开(公告)日：2016-11-17
申请号：US15218104
申请日：2016-07-25
Applicant: FUJIFILM CORPORATION
Inventor： Kouki TAKAHASHI , Yoshihisa USAMI
CPC classification number: H01L51/0003 , B05C11/08 , H01L51/0011 , H01L51/0028
Abstract: Provided is a method of forming an organic semiconductor film which uses a shielding member for covering a solution, including: obtaining a state in which a solution that is in contact with the shielding member and contains an organic semiconductor material and a solvent is present, between the substrate and the shielding member positioned parallel to and separated from the substrate, in a predetermined position on the substrate placed on a stage; and moving the stage and the shielding member relative to each other in a predetermined direction. In this manner, an organic semiconductor film having a large area and excellent crystallinity is formed in a desired position on the substrate.
Abstract translation: 提供一种形成有机半导体膜的方法，该有机半导体膜使用屏蔽部件覆盖溶液，包括：获得与屏蔽部件接触并且含有有机半导体材料和溶剂的溶液存在的状态， 所述基板和所述屏蔽构件在放置在台架上的所述基板上的预定位置平行于所述基板分离; 并且使所述工作台和所述屏蔽部件沿预定方向相对于彼此移动。 以这种方式，在基板上的期望位置形成具有大面积和优异结晶度的有机半导体膜。
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公开(公告)号：US20160133795A1
公开(公告)日：2016-05-12
申请号：US14995641
申请日：2016-01-14
Applicant: FUJIFILM Corporation
Inventor： Yoshihisa USAMI
CPC classification number: H01L33/44 , H01L24/00 , H01L25/0753 , H01L33/38 , H01L51/0021 , H01L51/0024 , H01L51/56 , H01L2224/95 , H01L2924/0002 , H01L2933/0016 , H01L2933/0025 , H01L2933/005 , H05B33/10
Abstract: Provided is a method of manufacturing a light-emitting device, the method including: a step of providing a conductive material on both surfaces of a base material in which a plurality of light-emitting elements each including a first electrode and a second electrode facing each other are formed, and cutting out the light-emitting elements together with the conductive material from the base material, to thereby obtain the light-emitting elements in each of which the first electrode and the second electrode are provided with conductive members having substantially the same sizes as those of the first electrode and the second electrode; a step of mixing the light-emitting elements with a binder having an insulating property to obtain a coating liquid, and applying the coating liquid onto a first substrate having a conductive layer formed thereon, to thereby form a coating layer; a step of laminating a second substrate having a conductive layer formed thereon on the first substrate so that the coating layer is interposed between the first and second substrates; and a step of applying pressure in a lamination direction in which the first substrate and the second substrate are laminated on each other, and holding the substrates at a preset temperature for a preset period of time in a state where the pressure is applied.
Abstract translation: 提供一种制造发光器件的方法，该方法包括：在基材的两个表面上设置导电材料的步骤，其中多个发光元件各自包括面向每个的第一电极和第二电极 另外形成，并且从基材与导电材料一起切割发光元件，从而获得发光元件，其中第一电极和第二电极中的每一个具有基本相同的导电构件 尺寸与第一电极和第二电极的尺寸一样; 将发光元件与具有绝缘性的粘合剂混合以获得涂布液的步骤，并将涂布液涂布到其上形成有导电层的第一基板上，从而形成涂层; 将在其上形成有导电层的第二基板层压在第一基板上以使涂层插入在第一和第二基板之间的步骤; 以及在施加了第一基板和第二基板的层叠方向上施加压力的步骤，并且在施加压力的状态下将基板保持在预设的温度下一段预定的时间。
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Patent Agency Ranking
公开(公告)号：US20150372234A1
公开(公告)日：2015-12-24
申请号：US14842574
申请日：2015-09-01
Applicant: FUJIFILM Corporation
Inventor： Masaru KINOSHITA , Yoshihisa USAMI
CPC classification number: H01L51/0013 , H01L27/3244 , H01L51/003 , H01L51/0031 , H01L51/0545 , H01L51/5012
Abstract: In the method for producing an organic semiconductor element having a semiconductor layer according to the present invention, an optical system for irradiating a laser beam with a wavelength of at least 4 μm and a donor substrate prepared by forming an organic semiconductor film on a surface of a supporting member having a laser beam transmittance of at least 50% are used; and the donor substrate and a substrate to be treated serving as a semiconductor element are opposite one another; the laser beam is irradiated from the supporting member side; the laser beam is scanned while modulating in accordance with the semiconductor layer to be formed; and the organic semiconductor film is transferred to the substrate to be treated so as to form the semiconductor layer.
Abstract translation: 在根据本发明的具有半导体层的有机半导体元件的制造方法中，用于照射波长至少为4μm的激光的光学系统和通过在有机半导体膜的表面上形成有机半导体膜而制备的供体基板 使用具有至少50％的激光束透射率的支撑构件; 并且施主衬底和用作半导体元件的被处理衬底彼此相对; 从支撑构件侧照射激光束; 在根据要形成的半导体层进行调制的同时扫描激光束; 并将有机半导体膜转移到待处理的基板上以形成半导体层。
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公开(公告)号：US20150372233A1
公开(公告)日：2015-12-24
申请号：US14842445
申请日：2015-09-01
Applicant: FUJIFILM Corporation
Inventor： Yoshihisa USAMI
CPC classification number: H01L51/0012 , H01L51/00 , H01L51/0002 , H01L51/0007 , H01L51/0014 , H01L51/003 , H01L51/0558 , H01L51/56
Abstract: In the present invention, an organic semiconductor film is formed by using a cover member which is disposed on a substrate for forming the organic semiconductor film and forms a space relative to the substrate, filling the space between the cover member and the substrate with a solution, and drying the filled solution, wherein the cover member has a control surface on which an uppermost part most separated from the substrate and a descending part provided on both sides in the y-direction of the uppermost part so as to descend from the uppermost part toward the substrate are formed.
Abstract translation: 在本发明中，通过使用盖构件形成有机半导体膜，所述盖构件设置在用于形成有机半导体膜的基板上并相对于基板形成空间，用溶液填充盖构件和基板之间的空间 并干燥填充的溶液，其中盖构件具有控制表面，在该控制表面上与基板最分离的最上部分和设置在最上部的y方向上的两侧上的下降部分从最上部分下降 形成基板。
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公开(公告)号：US20150364686A1
公开(公告)日：2015-12-17
申请号：US14835317
申请日：2015-08-25
Applicant: FUJIFILM CORPORATION
Inventor： Yoshiki MAEHARA , Yoshihisa USAMI
IPC: H01L51/00
CPC classification number: H01L51/0026 , H01L51/0003 , H01L51/0558
Abstract: A method for forming an organic semiconductor film includes: forming a solution film by applying a solution containing an organic semiconductor material and a solvent to at least a part of a substrate; and drying the solution film by irradiating at least a part of the solution film with electromagnetic waves with a wavelength of at least 8 μm and an energy density of from 0.1 to 10 J/cm2 on the surface of the solution film before the solution film dries. An organic semiconductor film having good crystallinity can be formed by the method.
Abstract translation: 形成有机半导体膜的方法包括：通过将含有有机半导体材料和溶剂的溶液施加到基板的至少一部分来形成溶液膜; 通过在溶液膜干燥之前，在溶液膜的表面上照射波长至少为8μm，能量密度为0.1〜10J / cm 2的电磁波的溶液膜的至少一部分来干燥溶液膜 。 可以通过该方法形成具有良好结晶度的有机半导体膜。
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公开(公告)号：US20150075069A1
公开(公告)日：2015-03-19
申请号：US14554305
申请日：2014-11-26
Applicant: FUJIFILM Corporation
Inventor： Mitsuyoshi ICHIHASHI , Yoshihisa USAMI
CPC classification number: A01G9/14 , A01G7/045 , F21V9/14 , F21Y2115/10 , G02B27/286 , Y02P60/146
Abstract: According to the present invention, provided is a system for irradiating a target object selectively with specific circularly polarized light, comprising a polarization-state control member that controls the polarization state of light to thereby generate circularly polarized light; and a circularly polarized light-reflecting member, wherein the circularly polarized light-reflecting member is disposed at a position on which the circularly polarized light emitted from the polarization-state control member can be incident; the circularly polarized light-reflecting member generates reflected light that selectively comprises circularly polarized light of the same sense as the incident circularly polarized light from the polarization-state control member; and the circularly polarized light-reflecting member is disposed such that the target object can be irradiated with at least a part of the reflected light.
Abstract translation: 根据本发明，提供一种用于以特定的圆偏振光选择性地照射目标物体的系统，包括控制光的偏振状态从而产生圆偏振光的偏振状态控制部件; 圆偏光反射构件，其中所述圆偏振光反射构件设置在从所述偏振态控制构件发射的圆偏振光可以入射的位置; 圆偏振光反射部件产生选择性地包含与来自偏光状态控制部件的入射圆偏振光相同感光度的圆偏振光的反射光; 并且圆偏振光反射部件设置成使得目标物体能够被至少一部分反射光照射。
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公开(公告)号：US20210351363A1
公开(公告)日：2021-11-11
申请号：US17382961
申请日：2021-07-22
Applicant: FUJIFILM Corporation , The University of Tokyo
Inventor： Eiji FUKUZAKI , Tetsuya WATANABE , Yoshihisa USAMI , Yukio TANI , Toshihiro OKAMOTO , Junichi TAKEYA
IPC: H01L51/00 , C07D471/22 , C07D471/06 , H01L29/786 , C07D491/22 , H01L51/10
Abstract: Provided are an organic thin film transistor, an organic semiconductor film, a compound, an organic thin film transistor-forming composition, and a method of manufacturing the organic thin film transistor. The organic thin film transistor includes the organic semiconductor film. The organic semiconductor film includes a compound represented by a specific formula. The organic semiconductor film, the compound, and the organic thin film transistor-forming composition can be preferably used in the organic thin film transistor. The method of manufacturing the organic thin film transistor includes a step of forming an organic semiconductor film by applying the organic thin film transistor-forming composition to a substrate.
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