Abstract:
The present invention provides a method and an apparatus for forming an oriented nanowire material as well as a method for forming a conductive structure, which can be used to solve the problem of imperfect process for forming oriented nanowire material in prior art. The method for forming an oriented nanowire material of the present invention comprises: forming a liquid film in a closed frame by a dispersion containing nanowires; expanding the closed frame in a first direction so that the liquid film expands in the first direction along with the closed frame; contracting the closed frame in the first direction so that the liquid film contracts in the first direction along with the closed frame; transferring the contracted liquid film to a substrate; and curing the liquid film to form an oriented nanowire material on the substrate.
Abstract:
A touch panel and a method for fabricating the same are disclosed. The method for fabricating the touch panel forms a pattern of a protruding structure on a base substrate by using a negative photoresist material, and the pattern of the protruding structure formed thereon is a pattern having a cross section which gradually increases from the base substrate to the outside surface and is similar to an inverted trapezoidal. Thereafter patterns of a touch electrode and dummy electrode insulated from each other are formed by using the pattern of the formed protruding structure as a mask. As the pattern of the touch electrode and the dummy electrode are disconnected through level difference of the protruding structure, the patterns of the touch electrode and the dummy electrode overlay the whole base substrate from the top view, allowing the whole surface of the touch panel to have the same optical property.
Abstract:
A thin film transistor and a preparation method therefor, an array substrate and a display apparatus. The thin film transistor comprises an active layer (4), an etched barrier layer (5) disposed on the active layer (4), and a source and drain (6) disposed on the etched barrier layer (5). The source and drain (6) are disposed on a same layer in a spaced manner. First via holes (7) are formed in the etched barrier layer (5), second via holes (8) are formed in positions in the active layer (4) corresponding to the first via holes (7). The source and drain (6) are connected to the active layer (4) through the first via holes (7) formed in the etched barrier layer (5) and the second via holes (8) formed in the active layer (4). Because two second via holes are formed in the active layer, a design value L1 of the channel region length of the active layer is shortened and a metal oxide semiconductor array substrate with a narrow channel is formed and the charge rate is high, which helps to improve the display effect.
Abstract:
Disclosed are a display panel, a manufacturing method thereof, and a displaying device. The display panel comprises a pixel layer, a support layer, a lens unit and a cover plate which are stacked in sequence. The support layer is located on a luminescent layer of the pixel layer. The lens unit comprises a lens layer, wherein the lens layer comprises a lens area and a non-lens area, and the lens area comprises multiple lenses arranged in an array. The display panel further comprises a polarization unit disposed on a light path between the pixel layer and the lens layer and configured to filter out light emitted from the pixel layer to the non-lens area.
Abstract:
A base support plate includes a support plate body. A support surface of the support plate body is configured to support a flexible base of a flexible display panel. The base support plate further includes a plurality of micro-structures disposed on the support surface of the support plate body, and the plurality of micro-structures are configured to diffuse incident light and transmit the incident light to the flexible base.
Abstract:
The present disclosure relates to a light-emitting diode (LED), including: a grating layer; and a light reflecting layer, wherein a light-emitting component is disposed between the grating layer and the light reflecting layer; and wherein the grating layer is configured to let linearly polarized light perpendicular to a grating direction of the grating layer in light emitted from the light-emitting component transmit through the grating layer, and reflect linearly polarized light parallel to the grating direction of the grating layer in the light emitted from the light-emitting component.
Abstract:
A metal wire grid polarization plate and a manufacturing method thereof, a display panel and a display device are provided. The metal wire grid polarization plate includes a substrate, a light absorption wire grid and a metal wire grid. The light absorption wire grid is disposed on a side of the substrate, and the metal wire grid covers the light absorption wire grid.
Abstract:
A reflective display device includes a reflective display panel and a white organic light-emitting diode (WOLED) front light source at a light emitting side of the reflective display panel. The WOLED front light source is a single-sided light emitting component, and a light emitting side of the WOLED front light source is oriented towards the reflective display panel.
Abstract:
A wire-grid polarizing element comprising a base substrate, and a carbon nanotube wire-grid and a metal wire-grid which are disposed on the base substrate, wherein the metal wire-grid and the carbon nanotube wire-grid are laminated in a direction perpendicular to the base substrate, and the carbon nanotube wire-grid comprises a plurality of carbon nanotubes having the same axial direction.
Abstract:
The present disclosure provides a method of fabricating a graphene touch sensor, a graphene sensor and a touch-sensitive display device. The method comprises: forming a graphene layer on a substrate; forming a metal layer on the graphene layer; coating a photoresist layer on the metal layer; exposing the photoresist layer by using a gray-scale reticle and developing the exposed photoresist layer to obtain a photoresist completely removed region, a photoresist partially remained region, and a photoresist completely remained region; removing the metal layer located in the photoresist completely removed region; removing the graphene layer located in the photoresist completely removed region; removing the metal layer located in the photoresist partially remained region; coating a protective film on the graphene layer located in the photoresist partially remained region; striping off the remainder photoresist. The embodiment of the present disclosure avoids the alkaline developing solution and the alkaline stripping solution from contacting the graphene film to degrade the conduction of the graphene, thereby increasing yield and reducing cost.