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31.发明授权公开(公告)号：US11335710B2
公开(公告)日：2022-05-17
申请号：US16936447
申请日：2020-07-23
Inventor： Qinghe Wang , Tongshang Su , Yongchao Huang , Yingbin Hu , Yang Zhang , Haitao Wang , Ning Liu , Guangyao Li , Zheng Wang , Yu Ji , Jinliang Hu , Wei Song , Jun Cheng , Liangchen Yan
Abstract: A thin film transistor, a display panel and a preparation method thereof and a display apparatus are provided. The thin film transistor includes: a substrate; a gate metal located on a side of the substrate; a gate insulating layer located on a side of the gate metal away from the substrate; an active layer located on a side of the gate insulating layer away from the substrate; a first metal oxide and a second metal oxide which are located on a side of the active layer away from the substrate and are arranged on a same layer; and a source metal and a drain metal which are located on sides of the first metal oxide and the second metal oxide away from the substrate and are arranged in a same layer.
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公开(公告)号：US11329115B2
公开(公告)日：2022-05-10
申请号：US16620653
申请日：2019-03-22
Inventor： Wei Song , Liangchen Yan , Ce Zhao , Heekyu Kim , Yuankui Ding , Leilei Cheng , Yingbin Hu , Wei Li , Yang Zhang
IPC: H01L27/32 , H01L51/00 , H01L51/56 , H01L29/417 , H01L29/786
Abstract: The present disclosure relates to a pixel structure. The pixel structure may include a base substrate; a first insulating island on a side of the base substrate; a first electrode on a side of the first insulating island opposite front the base substrate; a second electrode on the base substrate and at a peripheral area of the first insulating island; an active layer electrically connected to the first electrode and the second electrode; a second insulating layer on a side of the active layer opposite from the base substrate; a gate electrode on a side of the second insulating layer opposite from the base substrate; and a third insulating layer on a side of the gate electrode opposite from the base substrate.
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公开(公告)号：US20210335929A1
公开(公告)日：2021-10-28
申请号：US16333340
申请日：2018-11-16
Inventor： Wei Li , Jingjing Xia , Bin Zhou , Jun Liu , Yingbin Hu , Guangyao Li , Wei Song , Tongshang Su
Abstract: A display substrate includes a base substrate; and a single pixel definition layer on the base substrate defining a plurality of subpixel apertures. The single pixel definition layer includes a plurality of hydrophobic particles dispersed in a main body for enhancing hydrophobicity of a portion of the single pixel definition layer.
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公开(公告)号：US20210265392A1
公开(公告)日：2021-08-26
申请号：US17054823
申请日：2020-04-16
Inventor： Wei Song , Ce Zhao , Yuankui Ding , Ming Wang , Yingbin Hu , Qinghe Wang , Wei Li , Liusong Ni
IPC: H01L27/12 , H01L29/24 , H01L29/786 , H01L21/02 , H01L29/66
Abstract: This disclosure discloses an array substrate, and a production method, a display panel, and a display apparatus thereof. Particularly, this disclosure proposes a method of producing an array substrate, having the following steps: providing a substrate having a drive transistor region and a switch transistor region thereon; forming an preset layer for active layer on a side of the substrate; patterning the preset layer for active layer to form a drive active layer and a switch active layer, wherein an orthographic projection of the drive active layer on the substrate is located in the drive transistor region, an orthographic projection of the switch active layer on the substrate is located in the switch transistor region, and a carrier concentration in the drive active layer is less than a carrier concentration in the switch active layer.
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公开(公告)号：US11081501B2
公开(公告)日：2021-08-03
申请号：US16395660
申请日：2019-04-26
Inventor： Wei Song , Ce Zhao , Bin Zhou , Dongfang Wang , Yuankui Ding , Jun Liu , Yingbin Hu , Wei Li
IPC: H01L29/786 , H01L27/12 , H01L21/3213 , H01L29/40 , H01L29/66 , H01L21/02 , H01L21/473 , H01L21/44 , H01L29/417
Abstract: A thin film transistor and a method of fabricating the same, an array substrate and a method of fabricating the same, and a display device are provided, the method of fabricating a thin film transistor includes: forming an active layer on a base substrate; forming a metal layer on the active layer; and processing the metal layer to form a source electrode, a drain electrode, and a metal oxide layer, the metal oxide layer covering the source electrode, the drain electrode, and the active layer, the source electrode and the drain electrode being spaced apart and insulated from each other by the metal oxide layer.
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Patent Agency Ranking
公开(公告)号：US20210135012A1
公开(公告)日：2021-05-06
申请号：US16971085
申请日：2019-11-01
Inventor： Wei Song , Liangchen Yan , Ce Zhao , Heekyu Kim , Yuankui Ding , Leilei Cheng , Yingbin Hu , Wei Li , Guangyao Li , Qinghe Wang
IPC: H01L29/786 , H01L27/12 , H01L29/24 , H01L21/02 , H01L29/66
Abstract: The present disclosure is related to a thin film transistor. The thin film transistor may include an active layer; a gate insulating layer on the active layer; and a gate and a plurality of metal films on the gate insulating layer. The plurality of metal films may be spaced apart from the gate, and insulated from the gate and the active layer.
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公开(公告)号：US11616113B2
公开(公告)日：2023-03-28
申请号：US16966847
申请日：2020-01-03
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
IPC: H01L27/32 , G02F1/1362 , H01L51/56
Abstract: A method of manufacturing a display substrate includes: providing a base substrate; and forming a base insulating layer, a first conductive layer and an interlayer insulating layer that are sequentially stacked on top of one another at a side of the base substrate. The first conductive layer includes at least one break face, the base insulating layer includes a portion extending outward with respect to each of the at least one break face, and the break face and the corresponding portion extending outward constitute an unevenness portion having a stepped shape. The interlayer insulating layer covers at least the unevenness portion(s). Forming the interlayer insulating layer, includes: forming a first insulating sub-layer and a second insulating sub-layer that are sequentially stacked on top of one another; and forming one of the first insulating sub-layer and the second insulating sub-layer by curing a flowable insulating material.
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公开(公告)号：US11315783B2
公开(公告)日：2022-04-26
申请号：US16487552
申请日：2019-02-20
Inventor： Yuankui Ding , Heekyu Kim , Liangchen Yan , Ce Zhao , Bin Zhou , Yingbin Hu , Wei Song , Dongfang Wang
Abstract: A method of fabricating a display substrate is provided. The method includes forming a conductive layer on a base substrate; and performing a chemical vapor deposition process to form an oxide layer on a side of an exposed surface of the conductive layer away from the base substrate, the exposed surface of the conductive layer including copper, the oxide layer formed to include an oxide of a target element M. The chemical vapor deposition process is performed using a mixture of a first reaction gas including oxygen and a second reaction gas including the target element M, at a reaction temperature in a range of 200 Celsius degrees to 280 Celsius degrees. A mole ratio of oxygen element to the target element M in the mixture of the first reaction gas and the second reaction gas is in a range of 40:1 to 60:1.
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公开(公告)号：US11309428B2
公开(公告)日：2022-04-19
申请号：US16706160
申请日：2019-12-06
Inventor： Wei Song , Ce Zhao , Yuankui Ding , Ming Wang , Jun Liu , Yingbin Hu , Wei Li , Liusong Ni
IPC: H01L29/78 , H01L29/786 , H01L27/12 , H01L27/32
Abstract: The present disclosure provides a transistor and a manufacturing method thereof, a display substrate and a display device. The transistor includes: a base structure; an active layer on the base structure; and a gate electrode, a source electrode and a drain electrode that are all located on a side of the active layer distal to the base structure. The active layer includes a first region corresponding to an orthographic projection of the gate electrode on the base structure and a second region outside the orthographic projection. A surface of the base structure in contact with the active layer in the first region is not in the same plane as a surface of the base structure in contact with the active layer in the second region. The active layer in the first region has substantially the same thickness as a thickness of the active layer in the second region.
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公开(公告)号：US20220077255A1
公开(公告)日：2022-03-10
申请号：US17417334
申请日：2020-11-05
Inventor： Wei Li , Jingjing XIA , Bin Zhou , Yang Zhang , Guangyao Li , Wei Song , Xuanang Wang , Qinghe Wang , Liusong Ni , Jun Liu , Liangchen Yan , Ming Wang , Jingang Fang
Abstract: The present disclosure provides an array substrate, a method for manufacturing the array substrate, a display panel and a display device. The array substrate includes: a substrate; a planarization layer on a side of the substrate; a pixel defining layer configured to define a pixel opening region and located on a side of the planarization layer away from the substrate; an anode in the pixel opening region and on a side of the planarization layer away from the substrate. The array substrate further includes an intermediate insulation layer between the planarization layer and the pixel defining layer. The intermediate insulation layer has a chemical polarity between a chemical polarity of the planarization layer and a chemical polarity of the pixel defining layer.
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