公开(公告)号：US20140154823A1

公开(公告)日：2014-06-05

申请号：US13704156

申请日：2012-11-14

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiang Liu ,  Jianshe Xue

IPC: H01L27/12

CPC classification number: H01L27/1288 ,  H01L27/1225 ,  H01L29/7869

Abstract: Embodiments of the invention provide a manufacturing method of a TFT array substrate. The TFT array substrate is formed to comprise a plurality of scanning lines, a plurality of data lines and a plurality of pixel units defined by intersecting these scanning lines and these data lines with each other. Each of the pixel units comprises a TFT and a pixel electrode. The TFT is formed to comprise a gate electrode, a gate insulating layer, a metal oxide semiconductor layer used as an active layer, an etch stopping layer formed on a portion of the surface of the metal oxide semiconductor layer, a source electrode and a drain electrode. In this method, the metal oxide semiconductor layer, the source electrode and the drain electrode are formed by a same patterning process.

Abstract translation: 本发明的实施例提供一种TFT阵列基板的制造方法。 TFT阵列基板形成为包括多条扫描线，多条数据线和通过将这些扫描线和这些数据线相交而定义的多个像素单元。 每个像素单元包括TFT和像素电极。 TFT形成为包括栅电极，栅极绝缘层，用作有源层的金属氧化物半导体层，形成在金属氧化物半导体层的表面的一部分上的蚀刻停止层，源电极和漏极 电极。 在该方法中，金属氧化物半导体层，源电极和漏电极通过相同的图案化工艺形成。

公开(公告)号：US20140151608A1

公开(公告)日：2014-06-05

申请号：US14095443

申请日：2013-12-03

Applicant: Boe Technology Group Co., Ltd.

Inventor： Yonglian Qi ,  Chuanxiang Xu ,  Shi Shu ,  Jianshe Xue

IPC: H01B1/02 ,  H01B1/04

CPC classification number: H01B1/02 ,  H01B1/04

Abstract: The invention provides a conductive graphene-metal composite material, which is a composite of monolayer graphene nanoflakes and metal or metal oxide. The monolayer graphene nanoflakes of the invention are made by exfoliating graphite, and have a good combination with metal material by adopting an ultrasonic treatment or a mechanical agitation treatment. The graphene is uniformly dispersed therein and forms a conductive network, which can improve the electrochemical activity efficiently and reduce the resistance against the transfer of the charges efficiently. Use of the graphene-metal composite electrode reduces the costs of processes and facilities, on the premise of good properties. It can be used to replace the ITO conductive layer of the liquid crystal display.

Abstract translation: 本发明提供一种导电石墨烯 - 金属复合材料，其是单层石墨烯纳米片与金属或金属氧化物的复合材料。 本发明的单层石墨烯纳米片是通过剥离石墨制成的，并且通过采用超声波处理或机械搅拌处理与金属材料组合良好。 石墨烯均匀地分散在其中并形成导电网络，可以有效地提高电化学活性，并有效降低电荷转移的阻力。 在良好的性能的前提下，使用石墨烯 - 金属复合电极可以降低工艺和设备的成本。 可用于替代液晶显示器的ITO导电层。

公开(公告)号：US20140124784A1

公开(公告)日：2014-05-08

申请号：US13877745

申请日：2012-10-17

Applicant: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD. ,  BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jaemoon Chung ,  Qiuping Huang ,  Seong Sil Im ,  Dongseob Kim ,  Chao-Huan Hsu ,  Huawei Xu ,  Zhengwei Chen ,  Jianshe Xue

IPC: H01L29/49 ,  H01L27/12

CPC classification number: H01L29/4908 ,  H01L21/28008 ,  H01L21/3205 ,  H01L23/53228 ,  H01L23/53238 ,  H01L27/124 ,  H01L29/42384 ,  H01L29/458 ,  H01L2924/0002 ,  Y10T428/12826 ,  Y10T428/265 ,  Y10T428/31678 ,  H01L2924/00

Abstract: Embodiments of the invention provide a conductive structure, a thin film transistor, an array substrate, and a display device. The conductive structure comprises a copper layer formed of copper or copper alloy; a blocking layer for preventing copper ions of the copper layer from diffusing outward; and a diffusion prevention layer for preventing exterior ions from diffusing to the copper layer and disposed between the copper layer and the blocking layer. The multilayer conductive structure according to an embodiment of the invention can prevent exterior ions from diffusing into a copper layer and prevent copper ions from diffusing outward to reduce ions diffusion that adversely impacts the electricity performance and chemical corrosion resistance of the copper metal layer, and meanwhile can enhance adhesiveness of the conductive structure, which may be helpful for etching/patterning of the multilayer conductive structure.

Abstract translation: 本发明的实施例提供导电结构，薄膜晶体管，阵列基板和显示装置。 导电结构包括由铜或铜合金形成的铜层; 用于防止铜层的铜离子向外扩散的阻挡层; 以及用于防止外部离子扩散到铜层并设置在铜层和阻挡层之间的扩散防止层。 根据本发明的实施例的多层导电结构可以防止外部离子扩散到铜层中，并且防止铜离子向外扩散以减少不利地影响铜金属层的电性能和耐化学腐蚀性的离子扩散，同时 可以提高导电结构的粘附性，这有助于多层导电结构的蚀刻/图案化。