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    Formation of carbon and semiconductor nanomaterials using molecular assemblies
    32.
    发明授权
    Formation of carbon and semiconductor nanomaterials using molecular assemblies 有权
    使用分子组装形成碳和半导体纳米材料

    公开(公告)号：US07544546B2

    公开(公告)日：2009-06-09

    申请号：US11433586

    申请日：2006-05-15

    Applicant: Ali Afzali-Ardakani ,  Cherie R. Kagan ,  Laura L. Kosbar

    Inventor： Ali Afzali-Ardakani ,  Cherie R. Kagan ,  Laura L. Kosbar

    IPC: B82B1/00 ,  B82B3/00

    CPC classification number: H01L29/0665 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C30B25/00 ,  C30B29/02 ,  C30B29/60 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/78681 ,  H01L29/78684 ,  Y10S977/762 ,  Y10S977/84 ,  Y10S977/89 ,  Y10S977/932 ,  Y10S977/936 ,  Y10S977/938

    Abstract: The invention is directed to a method of forming carbon nanomaterials or semiconductor nanomaterials. The method comprises providing a substrate and attaching a molecular precursor to the substrate. The molecular precursor includes a surface binding group for attachment to the substrate and a binding group for attachment of metal-containing species. The metal-containing species is selected from a metal cation, metal compound, or metal or metal-oxide nanoparticle to form a metallized molecular precursor. The metallized molecular precursor is then subjected to a heat treatment to provide a catalytic site from which the carbon nanomaterials or semiconductor nanomaterials form. The heating of the metallized molecular precursor is conducted under conditions suitable for chemical vapor deposition of the carbon nanomaterials or semiconductor nanomaterials.

    Abstract translation: 本发明涉及形成碳纳米材料或半导体纳米材料的方法。 该方法包括提供基底并将分子前体附着到基底上。 分子前体包括用于连接到底物的表面结合基团和用于附着含金属的物质的结合基团。 含金属的物质选自金属阳离子，金属化合物或金属或金属氧化物纳米颗粒，以形成金属化的分子前体。 然后对金属化分子前体进行热处理以提供形成碳纳米材料或半导体纳米材料的催化部位。 金属化分子前体的加热在适于碳纳米材料或半导体纳米材料的化学气相沉积的条件下进行。

    FORMATION OF CARBON AND SEMICONDUCTOR NANOMATERIALS USING MOLECULAR ASSEMBLIES
    33.
    发明申请
    FORMATION OF CARBON AND SEMICONDUCTOR NANOMATERIALS USING MOLECULAR ASSEMBLIES 有权
    使用分子组装法制备碳和半导体纳米材料

    公开(公告)号：US20090087972A1

    公开(公告)日：2009-04-02

    申请号：US12199516

    申请日：2008-08-27

    Applicant: Ali Afzali-Ardakani ,  Cherie R. Kagan ,  Laura L. Kosbar

    Inventor： Ali Afzali-Ardakani ,  Cherie R. Kagan ,  Laura L. Kosbar

    IPC: H01L21/28 ,  C01B31/00

    CPC classification number: H01L29/0665 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C30B25/00 ,  C30B29/02 ,  C30B29/60 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/78681 ,  H01L29/78684 ,  Y10S977/762 ,  Y10S977/84 ,  Y10S977/89 ,  Y10S977/932 ,  Y10S977/936 ,  Y10S977/938

    Abstract: The invention is directed to a method of forming carbon nanomaterials or semiconductor nanomaterials. The method comprises providing a substrate and attaching a molecular precursor to the substrate. The molecular precursor includes a surface binding group for attachment to the substrate and a binding group for attachment of metal-containing species. The metal-containing, species is selected from a metal cation, metal compound, or metal or metal-oxide nanoparticle to form a metallized molecular precursor. The metallized molecular precursor is then subjected to a heat treatment to provide a catalytic site from which the carbon nanomaterials or semiconductor nanomaterials form. The heating of the metallized molecular precursor is conducted under conditions suitable for chemical vapor deposition of the carbon nanomaterials or semiconductor nanomaterials.

    Abstract translation: 本发明涉及形成碳纳米材料或半导体纳米材料的方法。 该方法包括提供基底并将分子前体附着到基底上。 分子前体包括用于连接到底物的表面结合基团和用于附着含金属的物质的结合基团。 含金属的物质选自金属阳离子，金属化合物或金属或金属氧化物纳米颗粒，以形成金属化的分子前体。 然后对金属化分子前体进行热处理以提供形成碳纳米材料或半导体纳米材料的催化部位。 金属化分子前体的加热在适于碳纳米材料或半导体纳米材料的化学气相沉积的条件下进行。

    RADIATION SENSITIVE SELF-ASSEMBLED MONOLAYERS AND USES THEREOF
    35.
    发明申请
    RADIATION SENSITIVE SELF-ASSEMBLED MONOLAYERS AND USES THEREOF 有权
    辐射敏感自组装单体及其用途

    公开(公告)号：US20080318157A1

    公开(公告)日：2008-12-25

    申请号：US12199607

    申请日：2008-08-27

    Applicant: Ali Afzali-Ardankani ,  Cherie R. Kagan ,  Laura L. Kosbar ,  Sally A. Swanson ,  Charan Srinivasan

    Inventor： Ali Afzali-Ardankani ,  Cherie R. Kagan ,  Laura L. Kosbar ,  Sally A. Swanson ,  Charan Srinivasan

    IPC: G03F7/004 ,  G03F7/20

    CPC classification number: C23C22/02 ,  B82Y10/00 ,  G03F7/165 ,  G03F7/405

    Abstract: The invention is directed to a radiation sensitive compound comprising a surface binding group proximate to one end of the compound for attachment to a substrate, and a metal binding group proximate to an opposite end of the compound. The metal binding group is not radiation sensitive. The radiation sensitive compound also includes a body portion disposed between the surface binding group and the metal binding group, and a radiation sensitive group positioned in the body portion or adjacent to the metal binding group. The surface binding group is capable of attaching to a substrate selected from a metal, a metal oxide, or a semiconductor material.

    Abstract translation: 本发明涉及一种辐射敏感化合物，其包含接近化合物一端的表面结合基团，用于连接至底物，以及靠近化合物相对端的金属结合基团。 金属结合组不辐射敏感。 辐射敏感化合物还包括设置在表面结合基团和金属结合基团之间的主体部分和位于主体部分中或与金属结合基团相邻的辐射敏感组。 表面结合基团能够附着于选自金属，金属氧化物或半导体材料的基板。

    Process for preparing a film having alternating monolayers of a metal-metal bonded complex monolayer and an organic monolayer by layer-by layer growth
    36.
    发明授权
    Process for preparing a film having alternating monolayers of a metal-metal bonded complex monolayer and an organic monolayer by layer-by layer growth 失效
    通过逐层生长制备具有金属 - 金属键合复合单层和有机单层的交替单层的膜的方法

    公开(公告)号：US07445815B2

    公开(公告)日：2008-11-04

    申请号：US11684506

    申请日：2007-03-09

    Applicant: Cherie R. Kagan ,  Chun Lin

    Inventor： Cherie R. Kagan ,  Chun Lin

    IPC: B05D1/36 ,  B05D7/02 ,  B05D7/14

    CPC classification number: B82Y30/00 ,  B05D1/185 ,  B05D7/52 ,  B82Y40/00 ,  Y10T428/12493 ,  Y10T428/261 ,  Y10T428/31504 ,  Y10T428/31536 ,  Y10T428/31663

    Abstract: The present invention provides a process for preparing a thin film having alternating monolayers of a metal-metal bonded complex monolayer and an organic monolayer by layer-by-layer growth. The process comprises the steps of: (1) applying onto a surface of a substrate a first linker compound to produce a primer layer; (2) applying onto said primer layer a layer of a metal-metal bonded complex to produce a metal-metal bonded complex monolayer on said primer layer;(3) applying onto said metal-metal bonded complex monolayer a second linker compound; and optionally(4) sequentially repeating steps (2) and (3) at least once to produce said layer-by-layer grown thin film having alternating monolayers of a metal-metal bonded complex monolayer and an organic monolayer.

    Abstract translation: 本发明提供了通过逐层生长制备具有金属 - 金属键合复合单层和有机单层的交替单层的薄膜的方法。 该方法包括以下步骤：（1）在基材的表面上施加第一接头化合物以产生底漆层; （2）在所述底漆层上施加一层金属 - 金属键合复合物，以在所述底漆层上产生金属 - 金属键合复合单层;（3）在所述金属 - 金属键合复合单层上施加第二接头化合物; 和任选地（4）顺序地重复步骤（2）和（3）至少一次以产生具有金属 - 金属键合复合单层和有机单层的交替单层的逐层生长薄膜。

    PROCESS FOR PREPARING A FILM HAVING ALTERNATING MONOLAYERS OF A METAL-METAL BONDED COMPLEX MONOLAYER AND AN ORGANIC MONOLAYER BY LAYER-BY LAYER GROWTH
    37.
    发明申请
    PROCESS FOR PREPARING A FILM HAVING ALTERNATING MONOLAYERS OF A METAL-METAL BONDED COMPLEX MONOLAYER AND AN ORGANIC MONOLAYER BY LAYER-BY LAYER GROWTH 有权
    金属复合复合单体和有机单层的替代单层膜的制备方法由层间增长

    公开(公告)号：US20090075097A1

    公开(公告)日：2009-03-19

    申请号：US12179846

    申请日：2008-07-25

    Applicant: Cherie R. Kagan ,  Chun Lin

    Inventor： Cherie R. Kagan ,  Chun Lin

    IPC: B32B9/04

    CPC classification number: B82Y30/00 ,  B05D1/185 ,  B05D7/52 ,  B82Y40/00 ,  Y10T428/12493 ,  Y10T428/261 ,  Y10T428/31504 ,  Y10T428/31536 ,  Y10T428/31663

    Abstract: The present invention provides a process for preparing a thin film having alternating monolayers of a metal-metal bonded complex monolayer and an organic monolayer by layer-by-layer growth. The process comprises the steps of: (1) applying onto a surface of a substrate a first linker compound to produce a primer layer; (2) applying onto said primer layer a layer of a metal-metal bonded complex to produce a metal-metal bonded complex monolayer on said primer layer; (3) applying onto said metal-metal bonded complex monolayer a second linker compound; and optionally (4) sequentially repeating steps (2) and (3) at least once to produce said layer-by-layer grown thin film having alternating monolayers of a metal-metal bonded complex monolayer and an organic monolayer.

    Abstract translation: 本发明提供了通过逐层生长制备具有金属 - 金属键合复合单层和有机单层的交替单层的薄膜的方法。 该方法包括以下步骤：（1）在基材的表面上施加第一接头化合物以产生底漆层; （2）在所述底漆层上施加一层金属 - 金属键合复合物，以在所述底漆层上产生金属 - 金属键合复合单层; （3）在所述金属键合复合单层上施加第二接头化合物; 和任选地（4）顺序地重复步骤（2）和（3）至少一次以产生具有金属 - 金属键合复合单层和有机单层的交替单层的逐层生长薄膜。

    Active devices using threads
    38.
    发明授权
    Active devices using threads 失效
    主动设备使用线程

    公开(公告)号：US06437422B1

    公开(公告)日：2002-08-20

    申请号：US09852078

    申请日：2001-05-09

    Applicant: Paul M. Solomon ,  Jane Margaret Shaw ,  Cherie R. Kagan ,  Christos Dimitrios Dimitrakopoulos ,  Tak Hung Ning

    Inventor： Paul M. Solomon ,  Jane Margaret Shaw ,  Cherie R. Kagan ,  Christos Dimitrios Dimitrakopoulos ,  Tak Hung Ning

    IPC: H01L2906

    CPC classification number: D02G3/441 ,  H01L29/0657 ,  H01L51/0036 ,  H01L51/0512 ,  H02N2/18

    Abstract: Active devices that have either a thread or a ribbon geometry. The thread geometry includes single thread active devices and multiple thread devices. Single thread devices have a central core that may contain different materials depending upon whether the active device is responsive to electrical, light, mechanical, heat, or chemical energy. Single thread active devices include FETs, electro-optical devices, stress transducers, and the like. The active devices include a semiconductor body that for the single thread devices is a layer about the core of the thread. For the multiple thread devices, the semiconductor body is either a layer on one or more of the threads or an elongated body disposed between two of the threads. For example, a FET is formed of three threads, one of which carries a gate insulator layer and a semiconductor layer and the other two of which are electrically conductive and serve as the source and drain. The substrates or threads are preferably flexible and can be formed in a fabric.

    Abstract translation: 具有螺纹或带状几何形状的活动设备。 螺纹几何包括单线程有源器件和多线程器件。 单线设备具有中心芯，其可以包含不同的材料，这取决于有源器件是否响应于电，光，机械，热或化学能量。 单线有源器件包括FET，电光器件，应力传感器等。 有源器件包括用于单线器件是围绕线芯的层的半导体本体。 对于多线器件，半导体本体是一个或多个螺纹上的层或设置在两个螺纹之间的细长体。 例如，FET由三条线构成，其中一条带有栅极绝缘体层和半导体层，另外两条导电并用作源极和漏极。 基材或丝线优选是柔性的并且可以在织物中形成。

    Thin film transistors with organic-inorganic hybrid materials as semiconducting channels
    40.
    发明授权
    Thin film transistors with organic-inorganic hybrid materials as semiconducting channels 有权
    具有有机 - 无机杂化材料的薄膜晶体管作为半导体通道

    公开(公告)号：US06180956B2

    公开(公告)日：2001-01-30

    申请号：US09261515

    申请日：1999-03-03

    Applicant: Konstantinos Chondroudis ,  Christos D. Dimitrakopoulos ,  Cherie R. Kagan ,  Ioannis Kymissis ,  David B. Mitzi

    Inventor： Konstantinos Chondroudis ,  Christos D. Dimitrakopoulos ,  Cherie R. Kagan ,  Ioannis Kymissis ,  David B. Mitzi

    IPC: H01L3524

    CPC classification number: H01L51/0541 ,  H01L51/0077 ,  H01L51/0545 ,  H01L51/0566

    Abstract: An FET structure in accordance with the invention employs an organic-inorganic hybrid material as the semiconducting channel between source and drain electrodes of the device. The organic-inorganic material combines the advantages of an inorganic, crystalline solid with those of an organic material. The inorganic component forms an extended, inorganic one-, two-, or three-dimensional network to provide the high carrier mobilities characteristic of inorganic, crystalline solids. The organic component facilitates the self-assembly of these materials and enables the materials to be deposited by simple, low temperature processing conditions such as spin-coating, dip-coating, or thermal evaporation. The organic component is also used to tailor the electronic properties of the inorganic framework by defining the dimensionality of the inorganic component and the electronic coupling between inorganic units.

    Abstract translation: 根据本发明的FET结构使用有机 - 无机混合材料作为器件的源极和漏极之间的半导体沟道。 有机 - 无机材料结合无机，结晶固体与有机材料的优点。 无机组分形成扩展的无机一维，二维或三维网络，以提供无机，结晶固体特征的高载流子迁移率。 有机组分有助于这些材料的自组装，并且能够通过简单的低温加工条件（例如旋涂，浸涂或热蒸发）来沉积材料。 有机组分也用于通过限定无机组分的维度和无机单元之间的电子偶合来定制无机骨架的电子性质。

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