公开(公告)号：US07910489B2

公开(公告)日：2011-03-22

申请号：US11357548

申请日：2006-02-17

Applicant: Ji Soo Kim ,  Peter Cirigliano ,  Sangheon Lee ,  Dongho Heo ,  Daehan Choi ,  S. M. Reza Sadjadi

Inventor： Ji Soo Kim ,  Peter Cirigliano ,  Sangheon Lee ,  Dongho Heo ,  Daehan Choi ,  S. M. Reza Sadjadi

IPC: H01L21/302

CPC classification number: H01L21/31116 ,  H01L21/30655

Abstract: A method for etching features into an etch layer disposed below a photoresist mask without an intermediate hardmask is provided. A plurality of etch cycles are provided. Each etch cycle comprises providing a deposition etch phase that etches features into the etch layer and deposits polymer on sidewalls of the features and over the photoresist and providing a cleaning phase that removes polymer deposited on the sidewalls.

Abstract translation: 提供了一种用于将特征蚀刻到设置在光刻胶掩模下方而不具有中间硬掩模的蚀刻层中的方法。 提供多个蚀刻循环。 每个蚀刻循环包括提供沉积蚀刻阶段，其将特征蚀刻到蚀刻层中并将聚合物沉积在特征的侧壁上并在光致抗蚀剂上方，并提供去除沉积在侧壁上的聚合物的清洁相。

公开(公告)号：US07442649B2

公开(公告)日：2008-10-28

申请号：US11094559

申请日：2005-03-29

Applicant: Jisoo Kim ,  Sangheon Lee ,  Binet A. Worsham ,  Robert Charatan ,  S.M. Reza Sadjadi

Inventor： Jisoo Kim ,  Sangheon Lee ,  Binet A. Worsham ,  Robert Charatan ,  S.M. Reza Sadjadi

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L21/31116

Abstract: A method for etching a dielectric layer over a substrate is provided. A photoresist mask is formed over the dielectric layer. The substrate is placed in a plasma processing chamber. An etchant gas comprising NF3 is provided into the plasma chamber. A plasma is formed from the NF3 gas. The dielectric layer is etched through the photoresist mask with the plasma from the NF3 gas.

Abstract translation: 提供了一种在衬底上蚀刻电介质层的方法。 在电介质层上形成光致抗蚀剂掩模。 将基板放置在等离子体处理室中。 包含NF 3 N的蚀刻剂气体被提供到等离子体室中。 从NF 3 N气体形成等离子体。 通过来自NF 3 N 3气体的等离子体通过光致抗蚀剂掩模蚀刻电介质层。

公开(公告)号：US20070193973A1

公开(公告)日：2007-08-23

申请号：US11357548

申请日：2006-02-17

Applicant: Ji Kim ,  Peter Cirigliano ,  Sangheon Lee ,  Dongho Heo ,  Daehan Choi ,  S. Sadjadi

Inventor： Ji Kim ,  Peter Cirigliano ,  Sangheon Lee ,  Dongho Heo ,  Daehan Choi ,  S. Sadjadi

IPC: C23F1/00 ,  C03C15/00

CPC classification number: H01L21/31116 ,  H01L21/30655

Abstract: A method for etching features into an etch layer disposed below a photoresist mask without an intermediate hardmask is provided. A plurality of etch cycles are provided. Each etch cycle comprises providing a deposition etch phase that etches features into the etch layer and deposits polymer on sidewalls of the features and over the photoresist and providing a cleaning phase that removes polymer deposited on the sidewalls.

Abstract translation: 提供了一种用于将特征蚀刻到设置在光刻胶掩模下方而不具有中间硬掩模的蚀刻层中的方法。 提供多个蚀刻循环。 每个蚀刻循环包括提供沉积蚀刻阶段，其将特征蚀刻到蚀刻层中并将聚合物沉积在特征的侧壁上并在光致抗蚀剂上方，并提供去除沉积在侧壁上的聚合物的清洁相。

公开(公告)号：US07250371B2

公开(公告)日：2007-07-31

申请号：US10648953

申请日：2003-08-26

Applicant: Sean S. Kang ,  Sangheon Lee ,  Wan-Lin Chen ,  Eric A. Hudson ,  S. M. Reza Sadjadi ,  Gan Ming Zhao

Inventor： Sean S. Kang ,  Sangheon Lee ,  Wan-Lin Chen ,  Eric A. Hudson ,  S. M. Reza Sadjadi ,  Gan Ming Zhao

IPC: H01L21/311

CPC classification number: H01L21/76802 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76816

Abstract: A feature in a layer is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls, where the photoresist features have a first critical dimension. A conformal layer is deposited over the sidewalls of the photoresist features to reduce the critical dimensions of the photoresist features. Features are etched into the layer, wherein the layer features have a second critical dimension, which is less than the first critical dimension.

Abstract translation: 提供了一个图层中的一个特征。 在该层上形成光致抗蚀剂层。 光致抗蚀剂层被图案化以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征，其中光致抗蚀剂特征具有第一临界尺寸。 在光致抗蚀剂特征的侧壁上沉积保形层以减少光致抗蚀剂特征的临界尺寸。 将特征蚀刻到层中，其中层特征具有小于第一临界尺寸的第二临界尺寸。

公开(公告)号：US20060266478A1

公开(公告)日：2006-11-30

申请号：US11142509

申请日：2005-05-31

Applicant: Sangheon Lee ,  Dae-Han Choi ,  Jisoo Kim ,  Peter Cirigliano ,  Zhisong Huang ,  Robert Charatan ,  S.M. Reza Sadjadi

Inventor： Sangheon Lee ,  Dae-Han Choi ,  Jisoo Kim ,  Peter Cirigliano ,  Zhisong Huang ,  Robert Charatan ,  S.M. Reza Sadjadi

IPC: H01L21/306 ,  C23F1/00

CPC classification number: C23F4/00 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76816 ,  Y10S438/947

Abstract: A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer.

公开(公告)号：US09732457B2

公开(公告)日：2017-08-15

申请号：US12976390

申请日：2010-12-22

Applicant: Changoh Kim ,  Jaehyun Kim ,  Jaewon Chang ,  Jongmin Lee ,  Sangheon Lee ,  Youngho Kim

Inventor： Changoh Kim ,  Jaehyun Kim ,  Jaewon Chang ,  Jongmin Lee ,  Sangheon Lee ,  Youngho Kim

IPC: D06F35/00 ,  D06F33/02 ,  D06F39/00 ,  D06F39/08

CPC classification number: D06F35/006 ,  D06F33/02 ,  D06F35/005 ,  D06F35/007 ,  D06F39/003 ,  D06F39/083 ,  D06F39/088

Abstract: Provided are a washing method and washing machine. In the washing method, an eco-rinsing process where a drum rotates in a state where at least a portion of laundry is pressed against the inner wall of the drum and wash water is sprayed into the drum is performed. A spinning process where the spraying of the wash water is stopped and the wash water is removed from the laundry by accelerating the drum is performed. Here, at least a portion of the laundry remains pressed against the wall of the drum in the eco-rinsing process and the spinning process.

公开(公告)号：US08959689B2

公开(公告)日：2015-02-24

申请号：US12917776

申请日：2010-11-02

Applicant: Wooyoung Kim ,  Youngho Kim ,  Jaehyun Kim ,  Moonhee Hong ,  Changoh Kim ,  Kyungchul Woo ,  Myonghun Im ,  Sangheon Lee ,  Jaewon Chang ,  Sooyoung Oh ,  Jongmin Lee

Inventor： Wooyoung Kim ,  Youngho Kim ,  Jaehyun Kim ,  Moonhee Hong ,  Changoh Kim ,  Kyungchul Woo ,  Myonghun Im ,  Sangheon Lee ,  Jaewon Chang ,  Sooyoung Oh ,  Jongmin Lee

IPC: D06F39/00 ,  D06F39/08 ,  D06F35/00

Abstract: Provided is a method for washing laundry in a washing machine, wherein the washing machine includes a tub and a drum disposed inside the tub, the method comprising: supplying wash water into the tub; rotating the drum such that the laundry is attached the drum and spraying the wash water changed to whirling water into the drum; and draining the wash water from the tub.

公开(公告)号：US08794039B2

公开(公告)日：2014-08-05

申请号：US12917737

申请日：2010-11-02

Applicant: Wooyoung Kim ,  Youngho Kim ,  Jaehyun Kim ,  Moonhee Hong ,  Changoh Kim ,  Kyungchul Woo ,  Myonghun Im ,  Sangheon Lee ,  Jaewon Chang ,  Sooyoung Oh ,  Jongmin Lee

Inventor： Wooyoung Kim ,  Youngho Kim ,  Jaehyun Kim ,  Moonhee Hong ,  Changoh Kim ,  Kyungchul Woo ,  Myonghun Im ,  Sangheon Lee ,  Jaewon Chang ,  Sooyoung Oh ,  Jongmin Lee

IPC: B08B3/00

Abstract: Provided is a washing machine. The washing machine includes a cabinet, a drum, and a whirling nozzle. The cabinet defines the exterior. The drum is provided in the cabinet, and rotates with laundry held therein. The whirling nozzle changes wash water into whirling water to spray the whirling water into the drum.

公开(公告)号：US08357434B1

公开(公告)日：2013-01-22

申请号：US11304223

申请日：2005-12-13

Applicant: Dae-han Choi ,  Jisoo Kim ,  Eric Hudson ,  Sangheon Lee ,  Conan Chiang ,  S. M. Reza Sadjadi

Inventor： Dae-han Choi ,  Jisoo Kim ,  Eric Hudson ,  Sangheon Lee ,  Conan Chiang ,  S. M. Reza Sadjadi

IPC: H05H1/24

CPC classification number: H01L21/0338 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32724 ,  H01J37/32834

Abstract: A method for depositing a conformal film on a substrate in a plasma processing chamber of a plasma processing system, the substrate being disposed on a chuck, the chuck being coupled to a cooling apparatus, is disclosed. The method includes flowing a first gas mixture into the plasma processing chamber at a first pressure, wherein the first gas mixture includes at least carbon, and wherein the first gas mixture has a condensation temperature. The method also includes cooling the chuck below the condensation temperature using the cooling apparatus thereby allowing at least some of the first gas mixture to condense on a surface of the substrate. The method further includes venting the first gas mixture from the processing chamber; flowing a second gas mixture into the plasma processing chamber, the second gas mixture being different in composition from the first gas mixture; and striking a plasma to form the conformal film.

Abstract translation: 公开了一种在等离子体处理系统的等离子体处理室中的基板上沉积保形膜的方法，该基板设置在卡盘上，该卡盘与冷却装置连接。 该方法包括在第一压力下将第一气体混合物流入等离子体处理室，其中第一气体混合物至少包括碳，并且其中第一气体混合物具有冷凝温度。 该方法还包括使用冷却装置将夹盘冷却至冷凝温度以下，从而允许至少一些第一气体混合物在基板的表面上冷凝。 该方法还包括从处理室排出第一气体混合物; 将第二气体混合物流入等离子体处理室，第二气体混合物的组成与第一气体混合物不同; 并冲击等离子体以形成保形膜。

公开(公告)号：US20120007503A1

公开(公告)日：2012-01-12

申请号：US13177016

申请日：2011-07-06

Applicant: Hyungjoon Kim ,  Sang Jean Jeon ,  Yury Tolmachev ,  Vasily Pashkovskiy ,  Sangheon Lee ,  Yunkwang Jeon

Inventor： Hyungjoon Kim ,  Sang Jean Jeon ,  Yury Tolmachev ,  Vasily Pashkovskiy ,  Sangheon Lee ,  Yunkwang Jeon

IPC: H05H1/24

CPC classification number: H05H1/46 ,  H01J37/3211 ,  H05H2001/4667

Abstract: At least two antenna coils are electrically connected in parallel to each other to generate uniform high density plasma, and capacitors are installed between the respective antenna coils and a ground to minimize an antenna voltage, thereby minimizing the effect of capacitive plasma coupling due to the antenna voltage.

Abstract translation: 至少两个天线线圈彼此并联电连接以产生均匀的高密度等离子体，并且电容器安装在各个天线线圈和地之间以最小化天线电压，从而最小化由天线引起的电容等离子体耦合的影响 电压。