-
公开(公告)号：US11639465B2
公开(公告)日：2023-05-02
申请号：US16202182
申请日：2018-11-28
发明人： Markus Seibald , Dominik Baumann , Tim Fiedler , Stefan Lange , Hubert Huppertz , Daniel Dutzler , Thorsten Schroeder , Daniel Bichler , Gudrun Plundrich , Simon Peschke , Gregor Hoerder , Gina Maya Achrainer , Klaus Wurst
摘要： A phosphor is specified. The phosphor has the general molecular formula:
(MA)a(MB)b(MC)c(MD)d(TA)e(TB)f(TC)g(TD)h(TE)i(TF)j(XA)k(XB)l(XC)m(XD)n:E. In this case, MA is selected from a group of monovalent metals, MB is selected from a group of divalent metals, MC is selected from a group of trivalent metals, MD is selected from a group of tetravalent metals, TA is selected from a group of monovalent metals, TB is selected from a group of divalent metals, TC is selected from a group of trivalent metals, TD is selected from a group of tetravalent metals, TE is selected from a group of pentavalent elements, TF is selected from a group of hexavalent elements, XA is selected from a group of elements which comprises halogens, XB is selected from a group of elements which comprises O, S and combinations thereof, -E=Eu, Ce, Yb and/or Mn, XC═N and XD=C. The following furthermore hold true: a+b+c+d=t; e+f+g+h+i+j=u; k+l+m+n=v; a+2b+3c+4d+e+2f+3g+4h+5i+6j−k−2l−3m−4n=w; 0.8≤t≤1; 3.5≤u≤4; 3.5≤v≤4; (−0.2)≤w≤0.2 and 0≤m 0.125 v.-
公开(公告)号：US20230086879A1
公开(公告)日：2023-03-23
申请号：US17483514
申请日：2021-09-23
发明人： Darshan Kundaliya , Alan Lenef , Thomas Dreeben
IPC分类号： H01L33/58 , H01L33/50 , H01L33/60 , H01S5/02257
摘要： In an embodiment a semiconductor light source includes an optoelectronic semiconductor chip configured to emit radiation and a cover body arranged on the optoelectronic semiconductor chip, wherein the cover body comprises a light-transmissive base body, wherein the light-transmissive base body comprises a plurality of recesses with inclined side faces, the recesses start at an emission side of the light-transmissive base body remote from the optoelectronic semiconductor chip and narrow towards the optoelectronic semiconductor chip, wherein a mirror coating is provided at top regions of the recesses next to the emission side, and wherein bottom regions of the recesses closest to the optoelectronic semiconductor chip are free of the mirror coating.
-
公开(公告)号：US20230080796A1
公开(公告)日：2023-03-16
申请号：US17759246
申请日：2021-01-13
发明人： Britta Goeoetz , Markus Burger
IPC分类号： H01L33/50 , H01L25/075 , H01L27/146 , H01L33/60
摘要： In an embodiment a component includes a semiconductor chip, a converter layer and a grid structure, wherein the semiconductor chip is configured to generate electromagnetic radiation, wherein the converter layer is configured to convert at least one portion of the electromagnetic radiation, wherein the grid structure is configured to suppress lateral optical crosstalk, the grid structure having a grid frame and openings enclosed by the grid frame, wherein the grid structure only adjoins the converter layer, wherein the openings of the grid structure are free of a material of the converter layer, and wherein optical elements are arranged in the openings.
-
公开(公告)号：US11588076B2
公开(公告)日：2023-02-21
申请号：US16606226
申请日：2018-04-17
发明人： Ion Stoll , Alexander Baumgartner , Alexander Wilm
IPC分类号： C09K11/77 , C09K11/66 , C09K11/08 , H01L33/50 , C12M1/00 , H01L33/28 , H01L33/32 , H01S5/323
摘要： A radiation-emitting optoelectronic component may include a semiconductor chip or a semiconductor laser which, in operation of the component, emits a primary radiation in the UV region or in the blue region of the electromagnetic spectrum. The optoelectronic component may further include a conversion element comprising a first phosphor configured to convert the primary radiation at least partly to a first secondary radiation having a peak wavelength in the green region of the electromagnetic spectrum between 475 nm and 500 nm inclusive. The first phosphor may be or include BaSi4Al3N9, SrSiAl2O3N2, BaSi2N2O2, ALi3XO4, M*(1−x*−y*−z*) Z*z*[A*a*B*b*C*c*D*d*E*e*N4-n*On*], and combinations thereof.
-
公开(公告)号：US20230042041A1
公开(公告)日：2023-02-09
申请号：US17792679
申请日：2020-12-18
发明人： Karlheinz ARNDT , Matthias GOLDBACH , Simon JEREBIC , Matthias HOFMANN , Markus BOSS , Constantin HETZER , Harald JAEGER , Jens EBERHARD , Sebastian STOLL
摘要： The Invention relates to a housing for an optoelectronic semiconductor component, comprising: a housing main body, which has a chip mounting side, at least two electrical conducting structures in and/or on the housing main body, and a plurality of drainage structures on the chip mounting side. The electrical conducting structures form, on the chip mounting side, electrical contact surfaces for at least one optoelectronic semiconductor chip and the drainage structure are designed as means for feeding a liquid potting material to the electrical contact surfaces.
-
公开(公告)号：US20230028464A1
公开(公告)日：2023-01-26
申请号：US17784855
申请日：2020-12-09
发明人： Alexander Tonkikh
摘要： In an embodiment an optoelectronic device includes an epitaxial layer stack having at least a first epitaxial layer and a second epitaxial layer arranged above the first epitaxial layer, wherein the following layers are embedded in the epitaxial layer stack a first semiconductor layer of a first conductivity type, an active layer arranged above the first semiconductor layer and configured to generate light, and a second semiconductor layer of a second conductivity type arranged above the active layer, wherein an interface between the first epitaxial layer and the second epitaxial layer extends at least partially through the first semiconductor layer and/or the second semiconductor layer, and wherein the active layer is embedded in a non-doped barrier layer, the barrier layer covering one or more side surfaces of the active layer.
-
37.发明申请公开(公告)号：US20230008186A1
公开(公告)日：2023-01-12
申请号：US17781932
申请日：2020-11-30
发明人： Daniel RICHTER
IPC分类号： H04N9/31
摘要： A projection apparatus includes a light source for emitting light with an initial spectral distribution, an optical element, and a projection surface. The optical element is arranged in a beam path of light emitted from the light source between the light source and the projection surface. The optical element includes a number of pixels. The pixels of the optical element are each configured to convert light with the initial spectral distribution into light with a predetermined final spectral distribution different from the initial spectral distribution.
-
公开(公告)号：US20230006118A1
公开(公告)日：2023-01-05
申请号：US17782545
申请日：2020-11-30
发明人： Hermann Nuss , Andreas Dobner , Bjoern Hoxhold , Andreas Waldschik , Erwin Beer , Bernd Boehm , Ludwig Hofbauer , Stefan Merl , Stefan Rass , Matthias Stark
IPC分类号： H01L33/62 , H01L25/075 , H01L33/00
摘要： In an embodiment an optoelectronic device includes a carrier and a plurality of semiconductor chips fastened on the carrier by a connector, wherein each semiconductor chip has at least one contact pad on a main surface facing away from the carrier, wherein each contact pad is contacted electrically by an interconnecting track, and wherein the interconnecting track is guided over an edge of the main surface of the semiconductor chip onto the carrier.
-
公开(公告)号：US20220406954A1
公开(公告)日：2022-12-22
申请号：US17790523
申请日：2021-01-08
IPC分类号： H01L31/107 , H01L31/109 , H01L31/118
摘要： A semiconductor photodiode (600) comprises a top side (602) with an active surface area (604) for light entry, a bottom side (606), a bulk structure (610) made of a single semiconductor material, the bulk structure comprising a p-type layer (612a) and an n-type layer (612b), which together form the p-n junction (612) of the photodiode, wherein one of the two layers of the p-n junction is an upper p-n junction layer (612a) and the other one is a lower p-n junction layer (612b), wherein the upper p-n junction layer (612a) is located proximate to the active surface area (604), and a semiconductor light absorption layer (614), wherein the light absorption layer (614) defines the active surface area (604) and is arranged on top of the bulk structure (610), above the upper p-n junction layer (612a), and the semiconductor material of the light absorption layer (614) is different from the semiconductor material of the bulk structure (610), the light absorption layer (614) and the upper p-n junction layer (612a) thus forming a heterojunction, and the photodiode (600) further comprises a precursor layer (620) arranged between the bulk structure (610) and the light absorption layer (614), the light absorption layer (614) being grown on the precursor layer.
-
公开(公告)号：US20220399314A1
公开(公告)日：2022-12-15
申请号：US17769407
申请日：2020-12-14
发明人： Laura Kreiner , Jens Mueller
IPC分类号： H01L25/075 , H01L33/00 , H01L21/66
摘要： In an embodiment a method for producing a lighting device includes providing a wafer assemblage having a semiconductor layer sequence arranged on a carrier substrate, separating the wafer assemblage into a plurality of first optoelectronic semiconductor chips, each comprising a section of the semiconductor layer sequence and of the carrier substrate, transferring at least some of the first optoelectronic semiconductor chips to a first auxiliary carrier, wherein the first auxiliary carrier has contact pads on a main surface, wherein the contact pads are surrounded and delimited in each case by a contour, and wherein each of the first optoelectronic semiconductor chips is arranged on a contact pad, cutting, on the first auxiliary carrier, to size the first optoelectronic semiconductor chips in order to adapt the first optoelectronic semiconductor chips to a predefined shape such that the each first optoelectronic semiconductor chip lies completely within the contour of an assigned contact pad, and transferring the first optoelectronic semiconductor chips from the first auxiliary carrier to a carrier.
-
-
-
-
-
-
-
-
-
搜索结果
2569 条记录 (耗时 0.038 秒)
