Data processing unit, data processing method, and program product for determining a transshipment method
    34.
    发明授权
    Data processing unit, data processing method, and program product for determining a transshipment method 有权
    数据处理单元,数据处理方法和用于确定转运方法的程序产品

    公开(公告)号:US08165905B2

    公开(公告)日:2012-04-24

    申请号:US10866038

    申请日:2004-06-14

    Inventor: Masashi Yamamoto

    CPC classification number: G06Q10/08 G06Q10/0631 G06Q10/087

    Abstract: A data processing unit, a data processing method, and a program product for determining a transhipment method are provided. The data processing unit may include a solution search processor for performing solution search processing of a plurality of physical objects. In the data processing unit, a data representation of a loading state of an object may have a corresponding variable which takes as a value an identification number of a heap at a predetermined physical location. The data representation of the loading state may include a coordinate value indicating a loading order of the object in the heap. The data processing unit may also include an initial condition inputter. The solution search processor may perform the solution search processing by constructing a search tree.

    Abstract translation: 提供了一种用于确定转运方法的数据处理单元,数据处理方法和程序产品。 数据处理单元可以包括用于执行多个物理对象的解决方案搜索处理的解决方案搜索处理器。 在数据处理单元中,对象的加载状态的数据表示可以具有对应的变量,该变量将预定物理位置的堆的识别号作为值。 加载状态的数据表示可以包括指示堆中对象的加载顺序的坐标值。 数据处理单元还可以包括初始条件输入器。 解决方案搜索处理器可以通过构建搜索树来执行解决方案搜索处理。

    Nitride semiconductor device comprising bonded substrate and fabrication method of the same
    35.
    发明授权
    Nitride semiconductor device comprising bonded substrate and fabrication method of the same 有权
    包含键合衬底的氮化物半导体器件及其制造方法

    公开(公告)号:US08030665B2

    公开(公告)日:2011-10-04

    申请号:US12113030

    申请日:2008-04-30

    Abstract: A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 and p-type nitride semiconductor layers 7 to 8 are laminated to form a stack of nitride semiconductor on the first face of the substrate 1. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer 8. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate 1 for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer 9 and the second bonding layer 11 are faced with each other and, then, pressed with heat to bond together. After that, the substrate 1 for growing nitride semiconductor is removed from the stack of nitride semiconductor so that a nitride semiconductor device is provided.

    Abstract translation: 用于生长氮化物半导体的衬底1具有第一面和第二面,其热膨胀系数大于氮化物半导体的热膨胀系数。 至少n型氮化物半导体层3至5,有源层6和p型氮化物半导体层7至8层叠以在衬底1的第一面上形成氮化物半导体层。第一接合层包括更多 在p型氮化物半导体层8上形成一层以上的金属层。具有第一面和第二面的支撑基板的热膨胀系数大于氮化物半导体的热膨胀系数,并且等于或小于基板1的热膨胀系数 用于生长氮化物半导体。 在支撑基板的第一面上形成包括多于一个金属层的第二粘接层。 第一接合层9和第二接合层11彼此面对,然后被加热压合以结合在一起。 之后,从氮化物半导体堆叠中去除用于生长氮化物半导体的衬底1,从而提供氮化物半导体器件。

    Driving assist system for vehicle
    36.
    发明授权
    Driving assist system for vehicle 有权
    车辆驾驶辅助系统

    公开(公告)号:US07873474B2

    公开(公告)日:2011-01-18

    申请号:US11798670

    申请日:2007-05-16

    Abstract: A mapping block locates the own vehicle and another vehicle on a map DB. Another-vehicle intersection detecting block detects intersections located on a traveling path of another vehicle. An own-vehicle intersection detecting block detects intersections located in front of the own vehicle. A collision-intersection identifying block identifies an intersection that is identical to each other as the possible collision intersection by comparing the intersections detected. An information providing block conducts information provision based on calculations of an arriving time of another vehicle by using a distance to the possible collision intersection and a vehicle speed. Accordingly, the collision possibility with another vehicle can be accurately determined.

    Abstract translation: 映射块将自己的车辆和另一车辆定位在地图DB上。 另一车辆相交检测块检测位于另一车辆的行进路径上的交叉路口。 本车交叉路口检测块检测位于本车辆前方的交叉点。 冲突交叉识别块通过比较检测到的交点来识别彼此相同的交点作为可能的碰撞交点。 信息提供块通过使用距离可能的碰撞交点的距离和车速,基于对另一车辆的到达时间的计算来进行信息提供。 因此,可以准确地确定与另一车辆的碰撞可能性。

    PIN Photodiode and Light Reception Device
    37.
    发明申请
    PIN Photodiode and Light Reception Device 审中-公开
    PIN光电二极管和光接收设备

    公开(公告)号:US20100289103A1

    公开(公告)日:2010-11-18

    申请号:US12086480

    申请日:2006-12-13

    CPC classification number: H01L31/105

    Abstract: Among photodiodes used in an optical system for applying light to the entire chip, the conventional PIN photodiode has a problem that light should be applied only to a light reception surface in order to prevent degradation of light response and that positioning of the optical system is difficult. Moreover, in the mesa type PIN photodiode not requiring positioning of an optical system, disconnection failure is often caused by the mesa step. The present invention is made to solve the aforementioned problems, and its object is to provide a PIN photodiode having an improved light response and causing less disconnection failure of metal wiring and a light reception device using the PIN photodiode. The PIN photodiode of the present invention has a structure that the light reception surface is surrounded by a groove of a predetermined depth.

    Abstract translation: 在用于向整个芯片施加光的光学系统中使用的光电二极管中,常规的PIN光电二极管具有光仅应用于光接收表面的问题,以防止光响应的劣化,并且光学系统的定位困难 。 此外,在不需要定位光学系统的台面型PIN光电二极管中,通常由台面台阶引起断开故障。 本发明是为了解决上述问题而提出的,其目的在于提供一种PIN光电二极管,该光电二极管具有改善的光响应,并且导致金属布线的断开不良和使用PIN光电二极管的光接收装置。 本发明的PIN光电二极管具有光接收表面被预定深度的槽包围的结构。

Patent Agency Ranking