公开(公告)号：US20100146756A1

公开(公告)日：2010-06-17

申请号：US12712442

申请日：2010-02-25

Applicant: Tae-kyung LEE ,  Jae-woo Chung ,  Kyo-yeol Lee ,  Hwa-sun Lee ,  Seung-mo Lim ,  Jae-chang Lee

Inventor： Tae-kyung LEE ,  Jae-woo Chung ,  Kyo-yeol Lee ,  Hwa-sun Lee ,  Seung-mo Lim ,  Jae-chang Lee

IPC: H01L41/22

CPC classification number: B41J2/14233 ,  B41J2002/14491 ,  Y10T29/42 ,  Y10T29/49002 ,  Y10T29/49005 ,  Y10T29/4908

Abstract: A piezoelectric actuator of an inkjet head and a method of forming the piezoelectric actuator. The piezoelectric actuator is formed on a vibration plate to provide a driving force to each of a plurality of pressure chambers. The piezoelectric actuator includes a lower electrode formed on the vibration plate, a piezoelectric layer formed on the lower electrode at a position corresponding to each of the pressure chambers, a supporting pad formed on the lower electrode, the supporting pad contacting one end of the piezoelectric layer and extending away from the one end of the piezoelectric layer, and an upper electrode extending from a top surface of the piezoelectric layer to a top surface of the supporting pad. The upper electrode is bonded to a driving circuit above the supporting pad to receive a voltage from the driving circuit. The piezoelectric layer may have substantially the same length as the pressure chamber. The supporting pad may be formed of a photosensitive polymer and may have substantially the same height as the piezoelectric layer. The upper electrode may include a first portion formed on the piezoelectric layer and a second portion formed on the supporting pad, and the second portion may be wider than the first portion.

Abstract translation: 喷墨头的压电致动器和形成压电致动器的方法。 压电致动器形成在振动板上以向多个压力室中的每一个提供驱动力。 压电致动器包括形成在振动板上的下电极，形成在下电极上的与每个压力室对应的位置处的压电层，形成在下电极上的支撑焊盘，支撑焊盘接触压电体的一端 并且离开压电层的一端延伸，以及从压电层的顶表面延伸到支撑衬垫的顶表面的上电极。 上电极接合到支撑焊盘上方的驱动电路，以接收来自驱动电路的电压。 压电层可以具有与压力室大致相同的长度。 支撑垫可以由光敏聚合物形成，并且可以具有与压电层基本相同的高度。 上部电极可以包括形成在压电层上的第一部分和形成在支撑垫上的第二部分，并且第二部分可以比第一部分更宽。

公开(公告)号：US07592618B2

公开(公告)日：2009-09-22

申请号：US11356122

申请日：2006-02-17

Applicant: Yoon-ho Khang ,  Eun-hyu Lee ,  Kyo-yeol Lee ,  Joo-hyun Lee ,  Seong-il Im

Inventor： Yoon-ho Khang ,  Eun-hyu Lee ,  Kyo-yeol Lee ,  Joo-hyun Lee ,  Seong-il Im

IPC: H01L33/00

CPC classification number: H05B33/14 ,  C09K11/02 ,  C09K11/59 ,  C09K11/592 ,  Y10S977/95 ,  Y10S977/952 ,  Y10T428/259

Abstract: The nanoparticle electroluminescence device includes: a front electrode formed of a transparent conductive material; a rear electrode formed of a conductive material; and an emitting layer interposed between the front electrode and the rear electrode and comprising a plurality of nanoparticles having a core/shell structure comprising a core formed of silicon and a shell formed of silicon oxide or silicon nitride on the surface of the core.

Abstract translation: 纳米颗粒电致发光器件包括：由透明导电材料形成的前电极; 由导电材料形成的后电极; 以及插入在前电极和后电极之间的发射层，并且包括多个纳米颗粒，其具有包含由硅形成的芯和在芯的表面上由氧化硅或氮化硅形成的壳的芯/壳结构。

公开(公告)号：US07504280B2

公开(公告)日：2009-03-17

申请号：US11357221

申请日：2006-02-21

Applicant: Yoon-ho Khang ,  Kyo-yeol Lee ,  Eun-hye Lee ,  Joo-hyun Lee

Inventor： Yoon-ho Khang ,  Kyo-yeol Lee ,  Eun-hye Lee ,  Joo-hyun Lee

IPC: H01L51/40

CPC classification number: H01L21/28273 ,  B82Y10/00 ,  H01L29/42332 ,  H01L29/7881 ,  Y10S438/962

Abstract: Provided is a nonvolatile memory device and a method of manufacturing the same. The nonvolatile memory device includes a semiconductor substrate on which a source, a drain, and a channel region are formed, a tunneling oxide film formed on the channel region, a floating gate formed of a fullerene material on the tunneling oxide, a blocking oxide film formed on the floating gate, and a gate electrode formed on the blocking oxide film.

Abstract translation: 提供一种非易失性存储器件及其制造方法。 非易失性存储器件包括其上形成有源极，漏极和沟道区的半导体衬底，在沟道区上形成的隧道氧化物膜，在隧道氧化物上由富勒烯材料形成的浮动栅，阻挡氧化膜 形成在浮置栅极上，以及形成在该阻挡氧化膜上的栅电极。

公开(公告)号：US20080122319A1

公开(公告)日：2008-05-29

申请号：US11877717

申请日：2007-10-24

Applicant: Kyo-yeol LEE ,  Hwa-sun Lee ,  Seung-mo Lim ,  Tae-kyung Lee ,  Jae-woo Chung

Inventor： Kyo-yeol LEE ,  Hwa-sun Lee ,  Seung-mo Lim ,  Tae-kyung Lee ,  Jae-woo Chung

IPC: H01L41/24 ,  B05D5/12 ,  H01L41/187

CPC classification number: H01L41/43 ,  H01L41/0815 ,  H01L41/319

Abstract: A method of forming a high density thick piezoelectric layer and a piezoelectric device the same. The method of forming the thick piezoelectric layer includes: forming a seed layer on a substrate by coating a sol including a piezoelectric material; primary heat-treating the seed layer; forming the thick piezoelectric layer by coating a paste that includes a piezoelectric material on the seed layer using a screen printing method; and secondary heat-treating the thick piezoelectric layer at a temperature higher than the primary heat-treating temperature. The piezoelectric material included in the sol has a composition identical or similar to the composition of the piezoelectric material included in the paste. The density of the thick piezoelectric layer is increased by particles of the piezoelectric material that penetrate into the thick piezoelectric layer from the seed layer in the secondary heat-treating, and thus, a high density thick piezoelectric layer can be formed.

Abstract translation: 形成高密度厚压电层的方法及其压电装置。 形成厚压电层的方法包括：通过涂布包括压电材料的溶胶在基板上形成种子层; 初级热处理种子层; 通过使用丝网印刷法在种子层上涂布包含压电材料的糊料来形成厚的压电层; 并且在比第一热处理温度高的温度下对厚的压电层进行二次热处理。 包含在溶胶中的压电材料具有与糊料中包含的压电材料的组成相同或相似的组成。 通过在二次热处理中从种子层渗透到厚压电体层中的压电体的粒子，能够增加厚的压电体层的密度，能够形成高密度的厚的压电体层。

公开(公告)号：US20060237866A1

公开(公告)日：2006-10-26

申请号：US11268482

申请日：2005-11-08

Applicant: Kyo-yeol Lee ,  Yoon-ho Khang

Inventor： Kyo-yeol Lee ,  Yoon-ho Khang

IPC: H01L21/00 ,  B29B9/00 ,  A61K9/14 ,  C23C16/00

CPC classification number: B01J19/088 ,  B01J2219/0849 ,  B01J2219/0875 ,  B01J2219/0894 ,  B82Y30/00

Abstract: Provided are an apparatus and method for producing nanoparticles by gas-to-particle conversion. Products obtained by decomposing a precursor and initial aggregated products thereof have the same polarities due to gas discharge so that decomposition products or initial aggregated products thereof are aggregated to produce nanoparticles with a narrow size distribution.

Abstract translation: 提供了一种通过气体 - 粒子转化生产纳米颗粒的装置和方法。 通过分解前体和其初始聚集产物而获得的产物由于气体排放而具有相同的极性，使得分解产物或其初始聚集产物被聚集以产生具有窄尺寸分布的纳米颗粒。

公开(公告)号：US06933213B2

公开(公告)日：2005-08-23

申请号：US10086892

申请日：2002-03-04

Applicant: Kyo-yeol Lee

Inventor： Kyo-yeol Lee

IPC: C30B29/38 ,  C30B25/02 ,  C30B25/18 ,  H01L21/18 ,  H01L21/20 ,  H01L21/205

CPC classification number: C30B25/02 ,  C30B25/18 ,  C30B29/40 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02664 ,  H01L33/0062 ,  H01L33/0079

Abstract: Provided is a compound semiconductor substrate fabrication method involving: preparing a base substrate; forming a first buffer layer on the prepared base substrate; forming a semiconductor layer on the first buffer layer; and removing the base substrate.

Abstract translation: 提供一种化合物半导体基板的制造方法，其包括：准备基板; 在所制备的基底基底上形成第一缓冲层; 在所述第一缓冲层上形成半导体层; 并移除基底。