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公开(公告)号：US20180321365A1
公开(公告)日：2018-11-08
申请号：US16035552
申请日：2018-07-13
发明人： Kailiang Chen , Tyler S. Ralston , Keith G. Fife
IPC分类号： G01S7/521 , G01S7/52 , G01S15/89 , H03K17/687
CPC分类号： G01S7/521 , G01S7/52017 , G01S7/5202 , G01S7/52047 , G01S7/5208 , G01S15/8915 , H03K17/6874
摘要： Circuitry for ultrasound devices is described. A multilevel pulser is described, which can provide bipolar pulses of multiple levels. The multilevel pulser includes a pulsing circuit and pulser and feedback circuit. Symmetric switches are also described. The symmetric switches can be positioned as inputs to ultrasound receiving circuitry to block signals from the receiving circuitry.
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公开(公告)号：US10082565B2
公开(公告)日：2018-09-25
申请号：US15087914
申请日：2016-03-31
发明人： Kailiang Chen , Tyler S. Ralston , Keith G. Fife
CPC分类号： G01S7/52022 , A61B7/04 , G01S7/52017 , G01S7/5202 , G01S7/52047 , G01S7/5208 , G01S7/521 , G01S15/8915 , G01S15/8977
摘要： Circuitry for ultrasound devices is described. A multilevel pulser is described, which can provide bipolar pulses of multiple levels. The multilevel pulser includes a pulsing circuit and pulser and feedback circuit. Symmetric switches are also described. The symmetric switches can be positioned as inputs to ultrasound receiving circuitry to block signals from the receiving circuitry.
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公开(公告)号：US10082488B2
公开(公告)日：2018-09-25
申请号：US14957443
申请日：2015-12-02
发明人： Kailiang Chen , Tyler S. Ralston
CPC分类号： G01N29/11 , G01N29/0654 , G01N29/44 , G01N2291/015 , G01N2291/02475 , H03H7/25
摘要： An ultrasound device, including a profile generator, an encoder configured to receive a profile signal from the profile generator, and an attenuator configured to receive a signal representing an output of an ultrasound sensor and coupled to the encoder to receive a control signal from the encoder, the attenuator including a plurality of attenuator stages, the attenuator configured to produce an output signal that is an attenuated version of the input signal.
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公开(公告)号：US20180133756A1
公开(公告)日：2018-05-17
申请号：US15868989
申请日：2018-01-11
发明人： Jonathan M. Rothberg , Keith G. Fife , Tyler S. Ralston , Gregory L. Charvat , Nevada J. Sanchez
摘要： CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided.
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35.发明申请公开(公告)号：US20180070925A1
公开(公告)日：2018-03-15
申请号：US15263939
申请日：2016-09-13
发明人： Kailiang Chen , Keith G. Fife
CPC分类号： A61B8/56 , A61B8/5207 , A61B8/54 , G01S7/52033 , H03M1/0617 , H03M1/1245 , H03M1/129
摘要： A time gain compensation (TGC) circuit for an ultrasound device includes a first amplifier having an integrating capacitor and a control circuit configured to generate a TGC control signal that controls an integration time of the integrating capacitor, thereby controlling a gain of the first amplifier. The integration time is an amount of time an input signal is coupled to the first amplifier before the input signal is isolated from the first amplifier.
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公开(公告)号：US20170322293A1
公开(公告)日：2017-11-09
申请号：US15659134
申请日：2017-07-25
发明人： Kailiang Chen , Tyler S. Ralston , Keith G. Fife
IPC分类号： G01S7/521 , H03K17/687
CPC分类号： G01S7/521 , G01S7/52017 , G01S7/5202 , G01S7/52047 , G01S7/5208 , G01S15/8915 , H03K17/6874
摘要： Circuitry for ultrasound devices is described. A multilevel pulser is described, which can provide bipolar pulses of multiple levels. The multilevel pulser includes a pulsing circuit and pulser and feedback circuit. Symmetric switches are also described. The symmetric switches can be positioned as inputs to ultrasound receiving circuitry to block signals from the receiving circuitry.
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公开(公告)号：US20170315099A1
公开(公告)日：2017-11-02
申请号：US15648187
申请日：2017-07-12
CPC分类号： G01N29/2406 , A61B8/4483 , B06B1/0292 , B81B7/007 , B81B2201/0271 , B81C1/00238 , B81C1/00301 , B81C2201/019 , B81C2203/036 , B81C2203/0792 , H01L2224/4813 , H01L2924/0002 , H01L2924/146 , H01L2924/1461
摘要： Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.
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公开(公告)号：US20170299705A1
公开(公告)日：2017-10-19
申请号：US15637668
申请日：2017-06-29
IPC分类号： G01S7/52 , A61B5/01 , A61B8/08 , A61B8/13 , A61N7/02 , A61N7/00 , A61B17/32 , A61B8/00 , A61B90/00
CPC分类号： A61B5/015 , A61B8/08 , A61B8/13 , A61B8/4209 , A61B8/4245 , A61B8/4254 , A61B8/4263 , A61B8/4477 , A61B8/4488 , A61B8/4494 , A61B8/483 , A61B8/5207 , A61B8/56 , A61B8/565 , A61B2017/320069 , A61B2090/378 , A61B2562/164 , A61N7/00 , A61N7/02 , A61N2007/0078
摘要： Apparatus and methods are described that include ultrasound imaging devices, which may operate in a transmissive ultrasound imaging modality, and which may be used to detect properties of interest of a subject such as index of refraction, density and/or speed of sound. Devices suitable for performing high intensity focused ultrasound (HIFU), as well as HIFU and ultrasound imaging, are also described.
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公开(公告)号：US20170299704A1
公开(公告)日：2017-10-19
申请号：US15637638
申请日：2017-06-29
IPC分类号： G01S7/52 , A61B5/01 , A61B8/08 , A61B8/13 , A61N7/02 , A61N7/00 , A61B17/32 , A61B8/00 , A61B90/00
CPC分类号： A61B5/015 , A61B8/08 , A61B8/13 , A61B8/4209 , A61B8/4245 , A61B8/4254 , A61B8/4263 , A61B8/4477 , A61B8/4488 , A61B8/4494 , A61B8/483 , A61B8/5207 , A61B8/56 , A61B8/565 , A61B2017/320069 , A61B2090/378 , A61B2562/164 , A61N7/00 , A61N7/02 , A61N2007/0078
摘要： Apparatus and methods are described that include ultrasound imaging devices, which may operate in a transmissive ultrasound imaging modality, and which may be used to detect properties of interest of a subject such as index of refraction, density and/or speed of sound. Devices suitable for performing high intensity focused ultrasound (HIFU), as well as HIFU and ultrasound imaging, are also described.
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40.发明授权公开(公告)号：US09738514B2
公开(公告)日：2017-08-22
申请号：US15291697
申请日：2016-10-12
发明人： Jonathan M. Rothberg , Keith G. Fife , Tyler S. Ralston , Gregory L. Charvat , Nevada J. Sanchez
CPC分类号： B81C1/00301 , B06B1/02 , B06B1/0292 , B81B7/007 , B81C1/00134 , B81C1/00158 , B81C1/00246 , B81C2201/0195 , B81C2203/0735 , B81C2203/0771 , G01N29/2406 , H01L29/84 , H04R19/005
摘要： Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.
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