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    发明申请

    公开(公告)号:US20250017093A1

    公开(公告)日:2025-01-09

    申请号:US18607908

    申请日:2024-03-18

    Abstract: A method for manufacturing a display device includes providing a display substrate including a base substrate having a pixel region and including a first surface and a second surface, which are placed opposite to each other, providing a donor substrate including a base layer and a transfer layer disposed on the base layer and including an organic material such that the transfer layer is spaced apart from the base substrate by a distance, aligning the donor substrate and the display substrate such that the transfer layer faces the first surface of the base substrate, and transferring the transfer layer to the display substrate by irradiating a laser toward the donor substrate on the second surface of the base substrate.

    MULTIAXIAL ARTIFICIAL MUSCLE TISSUE, AND METHOD AND STRUCTURE FOR FORMING SAME

    公开(公告)号:US20240350710A1

    公开(公告)日:2024-10-24

    申请号:US18034443

    申请日:2021-11-01

    Abstract: A multiaxial artificial muscle tissue is provided. The multiaxial artificial muscle tissue according to an embodiment of the present invention is a multiaxial artificial muscle tissue contractible or stretchable about a plurality of axes and comprises: a first module formed by gelling a hydrogel including muscle cells and extending in a first axial direction so as to be contractible or stretchable in the first axial direction; and a second module formed by gelling the hydrogel and extending in a second axial direction to be contractible or stretchable in the second axial direction, wherein a portion of the hydrogel and a portion of the hydrogel which constitute the first module and the second module, respectively, are integrated with each other such that a portion of the first module and a portion of the second module are connected to each other.

    ANTI-AMBIPOLAR TRANSISTOR HAVING VERTICAL STRUCTURE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20240347643A1

    公开(公告)日:2024-10-17

    申请号:US18632104

    申请日:2024-04-10

    CPC classification number: H01L29/78642 H01L29/66742

    Abstract: An anti-ambipolar transistor in which a turn-on operation is performed at a specific gate voltage and a method of manufacturing the same are disclosed. A vertically stacked structure including a first semiconductor layer and a second semiconductor layer, which are disposed perpendicular to the surface of a substrate, is formed, and then a gate dielectric layer and a gate electrode, which completely surround the side of the vertically stacked structure, are formed. Through the vertical structure, an electric field is generated in a direction parallel to the substrate, and a drain-source current is applied in a direction perpendicular to the surface of the substrate. This ensures the integration of the transistor and efficient operation of the transistor.

    SYSTEMS AND METHODS FOR NOISE-RESISTANT QUANTUM COMMUNICATION USING HYPERENTANGLEMENT

    公开(公告)号:US20240338466A1

    公开(公告)日:2024-10-10

    申请号:US18700030

    申请日:2022-11-10

    CPC classification number: G06F21/606 G06N10/60

    Abstract: A system for noise-resistant quantum communication using hyperentanglement includes a quantum system that includes a plurality of qubits, a processor, and a memory. The memory includes instructions stored thereon, which, when executed by the processor, cause the quantum system to access a signal of a quantum system that includes a plurality of qubits and obtain hyperentanglement of the plurality of qubits via an entanglement source. The hyperentanglement of the plurality of qubits is in at least two dimensions, including a first dimension and a second dimension. The instructions, when executed, further cause the quantum system to transmit the hyperentangled plurality of qubits via a communication channel; perform a communication of the signal with the first dimension of the at least two dimensions; and filter results of the communicated signal based on the second dimension of the at least two dimensions.

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