公开(公告)号：US20240347643A1

公开(公告)日：2024-10-17

申请号：US18632104

申请日：2024-04-10

Applicant: POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION

Inventor： Byoung Hun LEE ,  Yongsu LEE ,  Hae-Won LEE

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/78642 ,  H01L29/66742

Abstract: An anti-ambipolar transistor in which a turn-on operation is performed at a specific gate voltage and a method of manufacturing the same are disclosed. A vertically stacked structure including a first semiconductor layer and a second semiconductor layer, which are disposed perpendicular to the surface of a substrate, is formed, and then a gate dielectric layer and a gate electrode, which completely surround the side of the vertically stacked structure, are formed. Through the vertical structure, an electric field is generated in a direction parallel to the substrate, and a drain-source current is applied in a direction perpendicular to the surface of the substrate. This ensures the integration of the transistor and efficient operation of the transistor.