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331.发明申请公开(公告)号：US20220113636A1
公开(公告)日：2022-04-14
申请号：US17428223
申请日：2020-01-03
Applicant: ASML Netherlands B.V.
Inventor： Hans BUTLER , Bas JANSEN , Cornelius Adrianus Lambertus DE HOON
Abstract: The invention relates to an electronic system for an accelerometer having a piezoelectric element and a first mechanical resonance frequency, comprising: a) a damping circuit configured to: —receive an acceleration signal from the piezoelectric element; —electronically dampen an amplitude of the first mechanical resonance frequency; and—generate a damped acceleration signal, b) an extender configured to: —receive the damped acceleration signal; —extend the frequency response; and—output an extended damped acceleration signal, wherein the extender is configured to have a first electronic anti-resonance frequency matching the damped first mechanical resonance frequency, and to have a frequency response between the first electronic anti-resonance frequency and a higher second frequency that is substantially opposite to a corresponding frequency response of the combination of the accelerometer and the damping circuit.
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公开(公告)号：US20220107176A1
公开(公告)日：2022-04-07
申请号：US17487896
申请日：2021-09-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Yan WANG , Jian ZHANG , Zhiwen KANG , Yixiang WANG
Abstract: An inspection apparatus for adjusting a working height for a substrate for multiple target heights is disclosed. The inspection apparatus includes a radiation source configured to provide a radiation beam and a beam splitter configured to split the radiation beam into multiple beamlets that each reflect off a substrate. Each beamlet contains light of multiple wavelengths. The inspection apparatus includes multiple light reflecting components, wherein each light reflecting component is associated with one of the beamlets reflecting off the substrate and is configured to support a different target height for the substrate by detecting a height or a levelness of the substrate based on the beamlet reflecting off the substrate.
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公开(公告)号：US11294289B2
公开(公告)日：2022-04-05
申请号：US16339884
申请日：2017-09-21
Applicant: ASML NETHERLANDS B.V.
Abstract: A method for selecting an optimal set of locations for a measurement or feature on a substrate, the method includes: defining a first candidate solution of locations, defining a second candidate solution with locations based on modification of a coordinate in a solution domain of the first candidate solution, and selecting the first and/or second candidate solution as the optimal solution according to a constraint associated with the substrate.
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公开(公告)号：US20220100102A1
公开(公告)日：2022-03-31
申请号：US17427412
申请日：2020-01-30
Applicant: ASML NETHERLANDS B.V.
IPC: G03F7/20
Abstract: A lithographic apparatus including a projection system having an optical axis and configured to project a radiation beam. The apparatus includes a measurement unit arranged to measure the radiation beam projected by the projection system, the measurement unit having an opening through which the radiation beam passes in use, and a sensing surface extending transverse to the optical axis and arranged to measure the radiation beam passing through the opening. The apparatus is configured to move the sensing surface in a plane transverse to the optical axis between a plurality of measurement positions. The radiation beam defines a view in the plane, and the measurement unit is configured such that the sensing surface captures, in each measurement position, a portion of the view smaller than 100% of the view.
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公开(公告)号：US20220100079A1
公开(公告)日：2022-03-31
申请号：US17418102
申请日：2019-11-18
Applicant: ASML NETHERLANDS B.V.
Inventor： Quan ZHANG , Yong-Ju CHO , Zhangnan ZHU , Boyang HUANG , Been-Der CHEN
Abstract: A method for generating a mask pattern to be employed in a patterning process. The method including obtaining (i) a first feature patch including a first polygon portion of an initial mask pattern, and (ii) a second feature patch including a second polygon portion of the initial mask pattern; adjusting the second polygon portion at a patch boundary between the first feature patch and the second feature patch such that a difference between the first polygon portion and the second polygon portion at the patch boundary is reduced; and combining the first polygon portion and the adjusted second polygon portion at the patch boundary to form the mask pattern.
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Patent Agency Ranking
公开(公告)号：US20220099498A1
公开(公告)日：2022-03-31
申请号：US17425646
申请日：2019-12-19
Applicant: ASML Netherlands B.V.
Inventor： Sietse Thijmen VAN DER POST , Peter Danny VAN VOORST
Abstract: Disclosed is a wavefront sensor for measuring a tilt of a wavefront at an array of locations across a beam of radiation, wherein said wavefront sensor comprises a film, for example of Zirconium, having an indent array comprising an indent at each of said array of locations, such that each indent of the indent array is operable to perform focusing of said radiation. Also disclosed is a radiation source and inspection apparatus comprising such a wavefront sensor.
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公开(公告)号：US11287752B2
公开(公告)日：2022-03-29
申请号：US16625135
申请日：2018-06-07
Applicant: ASML Netherlands B.V.
Inventor： Adrianus Hendrik Koevoets , Cornelis Adrianus De Meijere , Willem Michiel De Rapper , Sjoerd Nicolaas Lambertus Donders , Jan Groenewold , Alain Louis Claude Leroux , Maxim Aleksandrovich Nasalevich , Andrey Nikipelov , Johannes Adrianus Cornelis Maria Pijnenburg , Jacobus Cornelis Gerardus Van Der Sanden
IPC: G03F7/20
Abstract: A lithographic apparatus comprising a projection system configured to project a patterned radiation beam to form an exposure area on a substrate, a cooling apparatus located in use above the substrate adjacent to the exposure area, the cooling apparatus being configured to remove heat from the substrate during use, a plasma vessel located below the cooling apparatus with its opening facing towards the cooling apparatus, and a gas supply for supplying gas to the plasma vessel and an aperture for receipt of a radiation beam. In use, supplied gas and a received radiation beam react to form a plasma within the plasma vessel that is directed towards a surface of the cooling apparatus which faces the opening of the plasma vessel.
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公开(公告)号：US20220091514A1
公开(公告)日：2022-03-24
申请号：US17424991
申请日：2019-12-18
Applicant: ASML NETHERLANDS B.V.
Inventor： Roy WERKMAN , David Frans Simon DECKERS , Bijoy RAJASEKHARAN , Ignacio Salvador VAZQUEZ RODARTE , Sarathi ROY
Abstract: A method of determining a control parameter for a lithographic process is disclosed, the method includes: defining a substrate model for representing a process parameter fingerprint across a substrate, the substrate model being defined as a combination of basis functions including at least one basis function suitable for representing variation of the process parameter fingerprint between substrates and/or batches of substrates; receiving measurements of the process parameter across at least one substrate; calculating substrate model parameters using the measurements and the basis functions; and determining the control parameter based on the substrate model parameters and the similarity of the at least one basis function to a process parameter fingerprint variation between substrates and/or batches of substrates.
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公开(公告)号：US11281113B2
公开(公告)日：2022-03-22
申请号：US17053255
申请日：2019-05-21
Applicant: ASML NETHERLANDS B.V.
Inventor： Danying Li , Chi-Hsiang Fan , Abdalmohsen Elmalk , Youping Zhang , Jay Jianhui Chen , Kui-Jun Huang
IPC: G03F7/20
Abstract: A method for determining a stack configuration for a substrate subjected to a patterning process. The method includes obtaining (i) measurement data of a stack configuration with location information on a printed substrate, (ii) a substrate model configured to predict a stack characteristic based on a location of the substrate, and (iii) a stack map including a plurality of stack configurations based on the substrate model. The method iteratively determines values of model parameters of the substrate model based on a fitting between the measurement data and the plurality of stack configurations of the stack map, and predicts an optimum stack configuration at a particular location based on the substrate model using the values of the model parameters.
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公开(公告)号：US11281110B2
公开(公告)日：2022-03-22
申请号：US16973395
申请日：2019-05-20
Applicant: ASML NETHERLANDS B.V.
Inventor： Jeroen Van Dongen , Wim Tjibbo Tel , Sarathi Roy , Yichen Zhang , Andrea Cavalli , Bart Laurens Sjenitzer , Simon Philip Spencer Hastings
IPC: G03F7/20
Abstract: A method of determining a sampling control scheme and/or a processing control scheme for substrates processed by a device. The method uses a fingerprint model and an evolution model to generate the control scheme. The fingerprint model is based on fingerprint data for a processing parameter of at least one substrate processed by a device, and the evolution model represents variation of the fingerprint data over time. The fingerprint model and the evolution model are analyzed and a sampling and/or processing control scheme is generated using the analysis. The sampling control scheme provides an indication for where and when to take measurements on substrates processed by the device. The processing control scheme provides an indication for how to control the processing of the substrate. Also, there is provided a method of determining which of multiple devices contributed to a fingerprint of a processing parameter.
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