INSPECTION TOOL AND METHOD OF DETERMINING A DISTORTION OF AN INSPECTION TOOL

    公开(公告)号:US20220270848A1

    公开(公告)日:2022-08-25

    申请号:US17668275

    申请日:2022-02-09

    Abstract: A method of determining a distortion of a field of view of a scanning electron microscope is described. The method may include: providing a sample including substantially parallel lines extending in a first direction; performing scans across the field of view of the sample along respective scan-trajectories extending in a scan direction; the scan direction being substantially perpendicular to the first direction; detecting a response signal of the sample caused by the scanning of the sample; determining a distance between a first line segment of a line and a second line segment of the line, whereby each of the first line segment and the second line segment are crossed by scan trajectories, based on the response signal; performing the previous step for multiple locations within the field of view; and determining the distortion across the field of view, based on the determined distances at the multiple locations.

    Method for process metrology
    308.
    发明授权

    公开(公告)号:US11385551B2

    公开(公告)日:2022-07-12

    申请号:US16330417

    申请日:2017-08-16

    Abstract: A method of evaluating a patterning process, the method including: obtaining the result of a first measurement of a first metrology target; obtaining the result of a second measurement of a second metrology target, the second metrology target having a structural difference from the first metrology target that generates a sensitivity difference and/or an offset, of a process parameter of the patterning process between the first and second metrology targets; and determining a value pertaining to the patterning process based on the results of the first and second measurements.

    Process window identifier
    309.
    发明授权

    公开(公告)号:US11379648B2

    公开(公告)日:2022-07-05

    申请号:US16993685

    申请日:2020-08-14

    Abstract: A method for determining an overlapping process window (OPW) of an area of interest on a portion of a design layout for a device manufacturing process for imaging the portion onto a substrate, the method including: obtaining a plurality of features in the area of interest; obtaining a plurality of values of one or more processing parameters of the device manufacturing process; determining existence of defects, probability of the existence of defects, or both in imaging the plurality of features by the device manufacturing process under each of the plurality of values; and determining the OPW of the area of interest from the existence of defects, the probability of the existence of defects, or both.

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