公开(公告)号：US11729533B2

公开(公告)日：2023-08-15

申请号：US17430842

申请日：2019-11-14

Applicant: Sony Semiconductor Solutions Corporation

Inventor： Takashi Moue ,  Yosuke Ueno

IPC: H03M1/06 ,  H04N25/772 ,  H04N25/57 ,  H04N25/75 ,  H04N25/709

CPC classification number: H04N25/772 ,  H04N25/57 ,  H04N25/709 ,  H04N25/75

Abstract: A solid-state image sensor includes: an input transistor configured to output, from a drain, a drain voltage according to an input voltage input to a source in a case where the input voltage substantially coincides with a predetermined reference voltage input to a gate; and an output transistor configured to output a signal indicating whether or not a difference between the input voltage input to a source and the drain voltage input to a gate exceeds a predetermined threshold voltage as a comparison result between the input voltage and the reference voltage.

公开(公告)号：US11722794B2

公开(公告)日：2023-08-08

申请号：US17371381

申请日：2021-07-09

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Manuel H. Innocent ,  Jeffery Beck

IPC: H04N25/59 ,  H04N25/57 ,  H04N25/75 ,  H04N25/585 ,  H04N25/50

CPC classification number: H04N25/59 ,  H04N25/50 ,  H04N25/57 ,  H04N25/585 ,  H04N25/75

Abstract: An image sensor may include an array of image pixels. The array of image pixel may be coupled to control circuitry and readout circuitry. One or more image pixels in the array may each include a photodiode and a floating diffusion region. The floating diffusion region may be coupled to a charge storage structure for a low conversion gain configuration and can be coupled to a charge storage structure for a medium conversion gain configuration. The medium conversion gain charge storage structure may be activated when transferring photodiode charge to the floating diffusion region for a high conversion gain configuration. The control circuitry may control each pixel to perform a high conversion gain readout operation, a medium conversion gain readout operation, and a low conversion gain readout operation. If desired, the medium conversion gain readout operation may be omitted.

公开(公告)号：US11722784B2

公开(公告)日：2023-08-08

申请号：US17834558

申请日：2022-06-07

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yoshiaki Satou ,  Yasuo Miyake ,  Yasunori Inoue ,  Tokuhiko Tamaki

IPC: H04N23/743 ,  H04N25/53 ,  H04N25/534 ,  H04N25/57 ,  H04N25/587 ,  H04N25/59 ,  H04N25/70 ,  H04N25/76 ,  H01L27/146 ,  H04N5/262 ,  H04N23/62 ,  H04N23/10 ,  H04N23/73 ,  G03B7/08 ,  H04N23/63

CPC classification number: H04N23/743 ,  G03B7/08 ,  H04N23/10 ,  H04N23/73 ,  H04N25/53 ,  H04N25/534 ,  H04N25/57 ,  H04N25/587 ,  H04N25/59 ,  H04N25/70 ,  H04N25/76 ,  H01L27/14632 ,  H04N5/2621 ,  H04N23/631

Abstract: An imaging device including pixels and processing circuitry, where the pixels capture a first image in a first exposure period within a frame period and capture a second image in a second exposure period within the frame period to generate multiple-exposure image data that include the first image and the second image in a multiplexed state, the second exposure period being different from the first exposure period, the second image being different from the first image in brightness or color, and the processing circuitry detects an image of a moving subject from the multiple-exposure image data.

公开(公告)号：US11678086B2

公开(公告)日：2023-06-13

申请号：US17180563

申请日：2021-02-19

Applicant: CANON KABUSHIKI KAISHA

Inventor： Kohichi Nakamura

IPC: H04N25/75 ,  H04N25/583 ,  H04N25/79 ,  H04N25/771 ,  H04N25/57

CPC classification number: H04N25/75 ,  H04N25/583 ,  H04N25/771 ,  H04N25/79 ,  H04N25/57

Abstract: A photoelectric conversion apparatus includes a pixel, an A/D conversion portion and an output circuit. The pixel includes first and second photoelectric conversion portions and an accumulation portion configured to accumulate a signal charge in a location other than the photoelectric conversion portions. The A/D conversion portion is configured to perform A/D conversions on signals based on signal charges generated in the photoelectric conversions. The output circuit reads out first and second signals based on first and second signal charges accumulated in the first and second photoelectric conversion portions during an electric charge accumulation period and a third signal based on a third signal charge generated in the second photoelectric conversion portion and accumulated in the accumulation portion during the electric charge accumulation period. Conversion periods for analog-to-digital conversion to be performed on at least two of the first, second, or third signals have different lengths.

公开(公告)号：US11671718B1

公开(公告)日：2023-06-06

申请号：US17653751

申请日：2022-03-07

Applicant: Snap Inc.

Inventor： Sagi Katz ,  Netanel Kligler ,  Gilad Refael

IPC: H04N25/57

CPC classification number: H04N25/57

Abstract: A method for increasing a dynamic range of a dual-pixel image sensor is described. The method includes detecting an intensity level of a full pixel from a plurality of pixels of an optical sensor, one or more full pixels of the plurality of pixels includes at least two sub-pixels, detecting an intensity level of one or more sub-pixels, detecting that the intensity level of the full pixel of the optical sensor has reached a saturation level of the full pixel, and in response to detecting that the intensity level of the full pixel of the optical sensor has reached the saturation level of the full pixel, computing an extrapolated intensity level of the full pixel based on the intensity level of the one or more sub-pixels.

公开(公告)号：US11647300B2

公开(公告)日：2023-05-09

申请号：US17247321

申请日：2020-12-07

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Seong Yeol Mun

IPC: H04N25/57 ,  H01L27/146 ,  H04N25/702 ,  H04N25/76 ,  H04N25/13 ,  H04N25/585 ,  H04N25/77

CPC classification number: H04N25/57 ,  H01L27/14603 ,  H01L27/14643 ,  H01L27/14683 ,  H04N25/702 ,  H04N25/76

Abstract: A pixel array for a high definition (HD) image sensor is disclosed. The pixel array includes a number of split pixel cells each including a first photodiode and a second photodiode that is more sensitive to incident light than the first photodiode. The first photodiode can be used to sense bright or high intensity light conditions, while the second photodiode can be used to sense low to medium intensity light conditions. In the disclosed pixel array, the sensitivity of one or more photodiodes is reduced by application of a light attenuation layer over the first photodiode of each split pixel cell. In accordance with methods of the disclosure, the light attenuation layer can be formed prior to the formation of a metal, optical isolation grid structure. This can lead to better control of the thickness and uniformity of light attenuation layer.

公开(公告)号：US12125740B2

公开(公告)日：2024-10-22

申请号：US18500386

申请日：2023-11-02

Applicant: SONY GROUP CORPORATION

Inventor： Kyohei Mizuta

IPC: H01L21/768 ,  H01L21/822 ,  H01L27/04 ,  H01L27/146 ,  H04N25/57 ,  H04N25/621 ,  H04N25/76

CPC classification number: H01L21/768 ,  H01L21/822 ,  H01L27/04 ,  H01L27/146 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14656 ,  H04N25/57 ,  H04N25/621 ,  H04N25/76

Abstract: The present technology relates to an imaging device capable of preventing a decrease of sensitivity of the imaging device in a case where a capacitance element is provided in a pixel, a method of manufacturing an imaging device, and an electronic device. The imaging device includes, in a pixel, a photoelectric conversion element and a capacitance element accumulating an electric charge generated by the photoelectric conversion element. The capacitance element includes a first electrode including a plurality of trenches, a plurality of second electrodes each having a cross-sectional area smaller than a contact connected to a gate electrode of a transistor in the pixel, and buried in each of the trenches, and a first insulating film disposed between the first electrode and the second electrode in each of the trenches. The present technology can be applied, for example, to a backside irradiation-type CMOS image sensor.

公开(公告)号：US20240340542A1

公开(公告)日：2024-10-10

申请号：US18745223

申请日：2024-06-17

Applicant: NIKON CORPORATION

Inventor： Takashi SHIONOYA ,  Toshiyuki Kanbara ,  Naoki Sekiguchi

IPC: H04N23/84 ,  G06T3/4015 ,  G06T5/50 ,  G06T5/70 ,  H04N23/10 ,  H04N23/12 ,  H04N23/67 ,  H04N23/73 ,  H04N23/76 ,  H04N25/53 ,  H04N25/533 ,  H04N25/57 ,  H04N25/583 ,  H04N25/60 ,  H04N25/704

CPC classification number: H04N23/843 ,  G06T3/4015 ,  G06T5/50 ,  G06T5/70 ,  H04N23/10 ,  H04N23/12 ,  H04N23/73 ,  H04N23/76 ,  H04N25/53 ,  H04N25/533 ,  H04N25/57 ,  H04N25/583 ,  H04N25/60 ,  H04N25/704 ,  H04N23/67

Abstract: An image capturing device includes: an image capturing element having a first image capturing region that captures an image of a photographic subject and outputs a first signal, and a second image capturing region that captures an image of the photographic subject and outputs a second signal; a setting unit that sets an image capture condition for the first image capturing region to an image capture condition that is different from an image capture condition for the second image capturing region; a correction unit that performs correction upon the second signal, for employment in interpolation of the first signal; and a generation unit that generates an image of the photographic subject that has been captured by the first image capturing region by employing a signal generated by interpolating the first signal according to the second signal as corrected by the correction unit.

公开(公告)号：US20240259714A1

公开(公告)日：2024-08-01

申请号：US18418788

申请日：2024-01-22

Applicant: MobilEye Vision Technologies Ltd.

Inventor： Gabriel Bowers

IPC: H04N25/78 ,  H04N25/57 ,  H04N25/63

CPC classification number: H04N25/78 ,  H04N25/57 ,  H04N25/63

Abstract: For example, a pixel processor may be configured to receive signed digital pixel data corresponding to a plurality of pixels of a pixel array, the signed digital pixel data including a plurality of pixel-read values over a signed range, the plurality of pixel-read values including a plurality of negative pixel-read values over a negative sub-range, and a plurality of positive pixel-read values over a positive sub-range; and to generate unsigned digital pixel data over an unsigned range based on the signed digital pixel data, the unsigned digital pixel data including a first plurality of unsigned digital pixel values over a first sub-range of the unsigned range, and a second plurality of unsigned digital pixel values over a second sub-range of the unsigned range. For example, the first plurality of unsigned digital pixel values may be based on a black level scaling factor applied to the plurality of negative pixel-read values.

公开(公告)号：US12021094B2

公开(公告)日：2024-06-25

申请号：US18077127

申请日：2022-12-07

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Sanshiro Shishido ,  Masashi Murakami ,  Kazuko Nishimura

IPC: H01L27/146 ,  H04N25/57 ,  H04N25/585 ,  H04N25/75 ,  H04N25/76 ,  H04N23/50 ,  H04N23/55

CPC classification number: H01L27/14612 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/14643 ,  H04N25/57 ,  H04N25/585 ,  H04N25/75 ,  H04N25/76 ,  H04N23/50 ,  H04N23/55

Abstract: An imaging device that includes a semiconductor substrate; a first photoelectric converter that is located in the semiconductor substrate and that generates a first signal charge by photoelectric conversion; a first node to which the first signal charge is input; a capacitor having a first terminal coupled to the first node; a second photoelectric converter that is located in the semiconductor substrate and that generates a second signal charge by photoelectric conversion; a second node to which the second signal charge is input; a transistor having a gate coupled to the second node; and a switch element coupled between the first node and the second node, where a number of saturation charges of a first imaging cell including the first photoelectric converter and the capacitor is greater than a number of saturation charges of a second imaging cell including the second photoelectric converter.