公开(公告)号：US09806692B2

公开(公告)日：2017-10-31

申请号：US14836782

申请日：2015-08-26

申请人： KYOCERA Corporation

发明人： Tetsuya Kishino

IPC分类号： H01Q1/50 ,  H03H9/25 ,  H03H9/00 ,  H03H9/02 ,  H03H9/72

CPC分类号： H03H9/25 ,  H01Q1/50 ,  H03H9/0033 ,  H03H9/02614 ,  H03H9/02913 ,  H03H9/02992 ,  H03H9/725

摘要： An acoustic wave element of the present disclosures has a piezoelectric substrate and an acoustic wave resonator S1 on a main surface of the piezoelectric substrate. The acoustic wave resonator S1 is one being divided into a first IDT electrode and a second IDT electrode which are electrically connected to the first IDT electrode. The first IDT electrode includes a first comb-shaped electrode on the signal input side and a second comb-shaped electrode on the signal output side. The second IDT electrode includes a third comb-shaped electrode on the signal input side and a fourth comb-shaped electrode on the signal output side. The direction of arrangement of the third comb-shaped electrode and the fourth comb-shaped electrode from the third comb-shaped electrode toward the fourth comb-shaped electrode is different from the direction of arrangement from the first comb-shaped electrode toward the second comb-shaped electrode.

公开(公告)号：US09520859B2

公开(公告)日：2016-12-13

申请号：US14666430

申请日：2015-03-24

申请人： Murata Manufacturing Co., Ltd.

发明人： Kenji Inate

IPC分类号： H03H9/72 ,  H03H9/10 ,  H03H3/08 ,  H03H9/02 ,  H01L41/22 ,  H03H9/25 ,  H03H9/05

CPC分类号： H03H9/725 ,  H01L41/22 ,  H01L2224/11 ,  H03H3/08 ,  H03H9/02913 ,  H03H9/0576 ,  H03H9/1092 ,  H03H9/25 ,  Y10T29/42

摘要： In an elastic wave device, a first electrode structure and a second electrode structure are provided on a piezoelectric substrate. The first electrode structure and the second electrode structure define first and second elastic wave element portions, respectively. A support frame on the piezoelectric substrate surrounds the first elastic wave element portion and the second elastic wave element portion. The support frame includes a dividing wall portion that divides the first elastic wave element portion and the second elastic wave element portion. A conductive shield electrode is provided in a groove provided in the dividing wall portion.

摘要翻译： 在弹性波装置中，在压电基板上设置第一电极结构和第二电极结构。 第一电极结构和第二电极结构分别限定第一和第二弹性波元件部分。 压电基板上的支撑框架包围第一弹性波形元件部分和第二弹性波形元件部分。 支撑框架包括分割第一弹性波元件部分和第二弹性波元件部分的分隔壁部分。 导电屏蔽电极设置在设置在分隔壁部分中的槽中。

公开(公告)号：US20160049920A1

公开(公告)日：2016-02-18

申请号：US14836782

申请日：2015-08-26

申请人： KYOCERA Corporation

发明人： Tetsuya KISHINO

IPC分类号： H03H9/25 ,  H01Q1/50 ,  H03H9/02 ,  H03H9/72

CPC分类号： H03H9/25 ,  H01Q1/50 ,  H03H9/0033 ,  H03H9/02614 ,  H03H9/02913 ,  H03H9/02992 ,  H03H9/725

摘要： An acoustic wave element of the present disclosures has a piezoelectric substrate and an acoustic wave resonator S1 on a main surface of the piezoelectric substrate. The acoustic wave resonator S1 is one being divided into a first IDT electrode and a second IDT electrode which are electrically connected to the first IDT electrode. The first IDT electrode includes a first comb-shaped electrode on the signal input side and a second comb-shaped electrode on the signal output side. The second IDT electrode includes a third comb-shaped electrode on the signal input side and a fourth comb-shaped electrode on the signal output side. The direction of arrangement of the third comb-shaped electrode and the fourth comb-shaped electrode from the third comb-shaped electrode toward the fourth comb-shaped electrode is different from the direction of arrangement from the first comb-shaped electrode toward the second comb-shaped electrode.

摘要翻译： 本公开的声波元件在压电基板的主表面上具有压电基板和声波谐振器S1。 声波谐振器S1是分别被电连接到第一IDT电极的第一IDT电极和第二IDT电极。 第一IDT电极包括信号输入侧的第一梳状电极和信号输出侧的第二梳状电极。 第二IDT电极包括信号输入侧的第三梳状电极和信号输出侧的第四梳状电极。 第三梳状电极和第四梳状电极从第三梳状电极朝向第四梳状电极的布置方向与从第一梳状电极朝向第二梳状体的布置方向不同 形电极。

公开(公告)号：US09041487B2

公开(公告)日：2015-05-26

申请号：US13379617

申请日：2010-06-25

申请人： Hiroyuki Tanaka

发明人： Hiroyuki Tanaka

IPC分类号： H03H9/72 ,  H03H9/64 ,  H03H9/00 ,  H03H9/02

CPC分类号： H03H9/0038 ,  H03H9/0042 ,  H03H9/02913 ,  H03H9/6436 ,  H03H9/725

摘要： An SAW filter and a duplexer excellent in electrical characteristics will be provided. An SAW filter has a piezoelectric substrate 40, a surface acoustic wave element 10 having a first IDT electrode 1 on the piezoelectric substrate 40, a first signal line 31 electrically connected to the first IDT electrode 1, and a ring-shaped reference potential line 9 which has a first intersecting portion intersecting with the first signal line 31 through an insulation member 41 and surrounds the surface acoustic wave element 10.

摘要翻译： 将提供优异的电气特性的SAW滤波器和双工器。 SAW滤波器具有压电基板40，在压电基板40上具有第一IDT电极1的表面声波元件10，与第一IDT电极1电连接的第一信号线31和环状基准电位线9 其具有通过绝缘构件41与第一信号线31相交的第一相交部分并且包围声表面波元件10。

公开(公告)号：US20150036304A1

公开(公告)日：2015-02-05

申请号：US14326071

申请日：2014-07-08

申请人： TAIYO YUDEN CO., LTD.

发明人： Motoi YAMAUCHI ,  Osamu KAWACHI

IPC分类号： H05K1/11 ,  H05K1/02

CPC分类号： H01L21/561 ,  H01L23/04 ,  H01L24/95 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/12042 ,  H01L2924/15174 ,  H01L2924/15787 ,  H01L2924/181 ,  H03H9/02913 ,  H03H9/1007 ,  H03H9/1085 ,  H03H2009/0019 ,  H05K1/0209 ,  H05K1/0216 ,  H05K1/0243 ,  H05K1/141 ,  H05K3/284 ,  H05K3/303 ,  H05K3/3436 ,  H05K2201/0305 ,  H05K2201/049 ,  H05K2201/068 ,  H05K2201/10068 ,  H05K2201/10371 ,  H05K2201/10537 ,  H05K2201/1056 ,  H05K2201/10674 ,  H05K2203/1316 ,  H01L2924/00

摘要： An electronic device includes: a wiring substrate; a plurality of device chips that are flip-chip mounted on an upper surface of the wiring substrate through bumps, have gaps which expose the bumps between the device chips and the upper surface of the wiring substrate, and include at least one device chip that has a substrate having a thermal expansion coefficient more than a thermal expansion coefficient of the wiring substrate; a junction substrate that is joined to the plurality of device chips, and has a thermal expansion coefficient equal to or less than the thermal expansion coefficient of the substrate included in the at least one device chip; and a sealer that covers the junction substrate, and seals the plurality of device chips.

摘要翻译： 电子设备包括：布线基板; 通过凸块倒装安装在布线基板的上表面上的多个器件芯片具有露出器件芯片与布线基板的上表面之间的凸块的间隙，并且包括至少一个器件芯片， 具有大于所述布线基板的热膨胀系数的热膨胀系数的基板; 连接到所述多个器件芯片的接合衬底，并且具有等于或小于所述至少一个器件芯片中包括的衬底的热膨胀系数的热膨胀系数; 以及覆盖接合基板的密封件，并且密封多个器件芯片。

公开(公告)号：US08421555B2

公开(公告)日：2013-04-16

申请号：US12658012

申请日：2010-02-01

申请人： Susumu Yoshimoto

发明人： Susumu Yoshimoto

IPC分类号： H03H9/72 ,  H03H9/64

CPC分类号： H03H9/02913 ,  H03H9/0057 ,  H03H9/02921 ,  H03H9/64 ,  H03H9/6476 ,  H03H9/6483 ,  H03H9/725

摘要： To provide a receiving side filter of a duplexer and a duplexer capable of preventing a leakage of an electric field and a magnetic field to the outside. In a receiving side filter having a longitudinal mode resonator type filter including cross finger electrodes and reflectors respectively formed on a piezoelectric substrate and an unbalanced input signal path and balanced output ports respectively provided on an input side and on an output side of the longitudinal mode resonator type filter, and used on a receiving side of a duplexer, a shield electrode connected to a ground electrode side of the cross finger electrode is disposed to surround a periphery of the receiving side filter so that an electric field and a magnetic field leaked to the outside from the receiving side filter are short-circuited by the shield electrode.

摘要翻译： 提供能够防止电场和磁场泄漏到外部的双工器和双工器的接收侧滤波器。 在具有纵向模式谐振器型滤波器的接收侧滤波器中，所述纵向模式谐振器型滤波器包括分别形成在压电基板上的交叉指状电极和反射器以及分别设置在纵向模式谐振器的输入侧和输出侧上的不平衡输入信号路径和平衡输出端口 并且在双工器的接收侧使用，连接到交叉指状电极的接地电极侧的屏蔽电极被设置为围绕接收侧滤波器的周边，使得电场和磁场泄漏到 从接收侧滤波器外侧被屏蔽电极短路。

公开(公告)号：US20120098618A1

公开(公告)日：2012-04-26

申请号：US13379617

申请日：2010-06-25

申请人： Hiroyuki Tanaka

发明人： Hiroyuki Tanaka

IPC分类号： H03H9/72 ,  H03H9/64

CPC分类号： H03H9/0038 ,  H03H9/0042 ,  H03H9/02913 ,  H03H9/6436 ,  H03H9/725

摘要： An SAW filter and a duplexer excellent in electrical characteristics will be provided. An SAW filter has a piezoelectric substrate 40, a surface acoustic wave element 10 having a first IDT electrode 1 on the piezoelectric substrate 40, a first signal line 31 electrically connected to the first IDT electrode 1, and a ring-shaped reference potential line 9 which has a first intersecting portion intersecting with the first signal line 31 through an insulation member 41 and surrounds the surface acoustic wave element 10.

摘要翻译： 将提供优异的电气特性的SAW滤波器和双工器。 SAW滤波器具有压电基板40，在压电基板40上具有第一IDT电极1的表面声波元件10，与第一IDT电极1电连接的第一信号线31和环状基准电位线9 其具有通过绝缘构件41与第一信号线31相交的第一相交部分并且包围声表面波元件10。

公开(公告)号：US20100207708A1

公开(公告)日：2010-08-19

申请号：US12773110

申请日：2010-05-04

申请人： Kazumasa HARUTA

发明人： Kazumasa HARUTA

IPC分类号： H03H9/17

CPC分类号： H03H9/0038 ,  H03H9/02913 ,  H03H9/02992 ,  H03H9/14594

摘要： An acoustic wave filter device has a balance-unbalance conversion function and has an increased out-of-band attenuation. The acoustic wave filter device includes a 5-IDT-type longitudinally coupled resonator-type acoustic wave filter unit including IDTs that are connected between an unbalanced terminal and first and second balanced terminals, and the IDTs and are connected to the first and second balanced terminals, respectively, that is arranged between the unbalanced terminal and the first and second balanced terminals. A second ground wiring that connects the end portions of the unbalanced-side IDT on the side connected to the ground potential to a ground terminal is separated from a first ground wiring. The second ground wiring includes first and second branched wiring portions, and the first and second branched wiring portions are arranged so as to sandwich an area in which the IDTs are provided.

摘要翻译： 声波滤波器装置具有平衡不平衡转换功能，并且具有增加的带外衰减。 声波滤波器装置包括连接在不平衡端子和第一和第二平衡端子之间的IDT的5-IDT型纵向耦合谐振器型声波滤波器单元和IDT并连接到第一和第二平衡端子 分别设置在不平衡端子与第一和第二平衡端子之间。 将与接地电位连接的一侧的不平衡侧IDT的端部与接地端子连接的第二接地配线与第一接地配线分离。 第二接地布线包括第一和第二分支布线部分，并且第一和第二分支布线部分布置成夹着设置有IDT的区域。

公开(公告)号：US07449978B2

公开(公告)日：2008-11-11

申请号：US11845990

申请日：2007-08-28

申请人： Kunio Yamaguchi ,  Ryouhei Kimura ,  Atsushi Tanaka ,  Kenyu Morozumi

发明人： Kunio Yamaguchi ,  Ryouhei Kimura ,  Atsushi Tanaka ,  Kenyu Morozumi

IPC分类号： H03H9/64 ,  H05K5/04 ,  H05K9/00

CPC分类号： H05K1/0243 ,  H03H9/0259 ,  H03H9/02913 ,  H05K1/111 ,  H05K2201/09063 ,  H05K2201/09281 ,  H05K2201/09336 ,  H05K2201/10083

摘要： In a fitting region for a SAW filter which includes langasite as its piezoelectric element, there are included an input side terminal electrode and an output side terminal electrode which are connected to an input terminal and to an output terminal of the SAW filter. To each of the terminal electrodes, at a position which is separated by just a predetermined distance from the fitting region of the SAW filter, there is connected a micro strip line which extends in mutually opposite directions along a direction which is parallel to the transmission direction of a frequency signal within the SAW filter. A slit is provided in the fitting region of the SAW filter and extends in a direction which intersects the transmission direction of the frequency signal within the SAW filter. A plurality of through holes are provided in the printed substrate and electrically connect together its surface and its rear surface which is grounded. Furthermore, there is provided a protective member which has a conductive surface and which is in contact with the surface of said filter, and said conductive surface of said protective member which is in contact with the surface of said filter is set so as to be of the same size as the surface of said filter, or so as to be smaller than it.

摘要翻译： 在包括硅灰石作为其压电元件的SAW滤波器的嵌合区域中，包括连接到SAW滤波器的输入端子和输出端子的输入侧端子电极和输出侧端子电极。 对于每个端子电极，在与SAW滤波器的嵌合区域分开只有预定距离的位置处连接有沿着与传输方向平行的方向在相互相反的方向上延伸的微带线 的SAW滤波器内的频率信号。 在SAW滤波器的装配区域中设置有狭缝，并且在与SAW滤波器内的频率信号的传输方向相交的方向上延伸。 多个通孔设置在印刷基板中，并将其表面及其背面接地电连接在一起。 此外，提供了具有导电表面并与所述过滤器的表面接触的保护构件，并且与所述过滤器的表面接触的所述保护构件的所述导电表面被设定为 与所述过滤器的表面相同的尺寸，或者比其小。

公开(公告)号：US07221244B2

公开(公告)日：2007-05-22

申请号：US11237056

申请日：2005-09-28

申请人： John C. Estes ,  Rodolfo Lucero ,  Anthony M. Pavio

发明人： John C. Estes ,  Rodolfo Lucero ,  Anthony M. Pavio

IPC分类号： H03H11/00

CPC分类号： H03H9/0557 ,  H01P1/203 ,  H03H9/02913 ,  H05K1/0218 ,  H05K1/0237 ,  H05K1/0243 ,  H05K1/16 ,  H05K1/181 ,  H05K1/185 ,  H05K2201/09618 ,  H05K2201/09972 ,  H05K2201/10371 ,  Y10T29/4913 ,  Y10T29/49137 ,  Y10T29/49146 ,  Y10T29/49165 ,  Y10T29/53174 ,  Y10T29/53178

摘要： An exemplary system and method for providing differential adjustment of the height of a multilayer substrate in localized areas for improved Q-factor performance of RF devices is disclosed as comprising inter alia: a multilayer substrate (200); an RF component (210) embedded in the substrate (200); a surface mounted component (220); and an RF shield (260) disposed next to the surface mounted component (220), wherein the height of the shield (260) does not extend substantially beyond the height of the surface mounted component (220). Disclosed features and specifications may be variously controlled, configured, adapted or otherwise optionally modified to further improve or otherwise optimize Q, RF performance and/or material characteristics. Exemplary embodiments of the present invention representatively provide for high-performance, high-quality RF devices that may be readily incorporated with existing technologies for the improvement of frequency response, device package form factors, weights and/or other manufacturing, device or material performance metrics.

摘要翻译： 公开了一种用于在局部区域中对多层基板的高度进行差分调整以提高RF器件的Q因子性能的示例性系统和方法，其特别包括：多层衬底（200）; 嵌入在所述基板（200）中的RF部件（210）; 表面安装部件（220）; 以及靠近所述表面安装部件（220）设置的RF屏蔽件（260），其中所述屏蔽件（260）的高度基本上不超过所述表面安装部件（220）的高度。 公开的特征和规范可以被不同地控制，配置，适配或以其他方式任意地修改，以进一步改善或者优化Q，RF性能和/或材料特性。 本发明的示例性实施例代表性地提供了可以容易地与用于改进频率响应，设备包装形状因子，重量和/或其他制造，设备或材料性能度量的现有技术结合的高性能，高质量的RF设备 。