METHODS AND APPARATUS FOR VOLTAGE SENSING AND REPORTING
    22.
    发明申请
    METHODS AND APPARATUS FOR VOLTAGE SENSING AND REPORTING 有权
    电压感应报告方法与装置

    公开(公告)号:US20120176847A1

    公开(公告)日:2012-07-12

    申请号:US13424936

    申请日:2012-03-20

    申请人: David R. Resnick

    发明人: David R. Resnick

    IPC分类号: G11C5/14 G11C7/00

    摘要: Semiconductor devices comprising at least one voltage sensor for sensing an operating voltage associated with an operational circuit of the semiconductor device. The at least one voltage sensor is configured to generate a signal indicative of a state of the operating voltage. Methods of monitoring a voltage in a semiconductor device include determining a magnitude of an operating voltage for an operational circuit in a semiconductor device. A signal may be generated indicating a state of the operating voltage.

    摘要翻译: 半导体器件包括用于感测与半导体器件的操作电路相关联的工作电压的至少一个电压传感器。 所述至少一个电压传感器被配置为产生指示所述工作电压的状态的信号。 监测半导体器件中的电压的方法包括确定半导体器件中的操作电路的工作电压的大小。 可以产生指示工作电压的状态的信号。

    VOLTAGE DETECTOR CIRCUIT
    23.
    发明申请
    VOLTAGE DETECTOR CIRCUIT 审中-公开
    电压检测电路

    公开(公告)号:US20110210758A1

    公开(公告)日:2011-09-01

    申请号:US13020299

    申请日:2011-02-03

    申请人: Longyue Zhang

    发明人: Longyue Zhang

    IPC分类号: G01R27/08

    CPC分类号: G01R19/16552

    摘要: A voltage detector circuit of the present invention includes a power supply voltage monitor that generates a monitored voltage resulting from dividing a power supply voltage, which is supplied from a first terminal, based on a resistance ratio between first and second resistors coupled between first and second terminals, a power supply voltage rising ramp detector that generates a boost signal which is enabled, if the power supply voltage rises faster than a preset rapidity to trigger operation switching, a resistance switching circuit that makes a third resistor coupled in parallel with the first resistor and a fourth resistor coupled in parallel with the second resistor active during a period when the boost signal is enabled, and a comparator that compares the monitored voltage with a reference voltage, and that outputs a voltage detection signal.

    摘要翻译: 本发明的电压检测器电路包括电源电压监视器,该电源电压监视器基于在第一和第二电阻之间耦合的第一和第二电阻之间的电阻比,产生由第一端子提供的电源电压分压所产生的监视电压 端子,电源电压上升斜坡检测器,其产生升压信号,所述升压信号在使能时,如果所述电源电压上升速度高于预设的速度以触发操作切换,则使所述第三电阻器与所述第一电阻器并联耦合的电阻切换电路 以及在所述升压信号使能的时段期间与所述第二电阻器并联耦合的第四电阻器以及将所监视的电压与参考电压进行比较并且输出电压检测信号的比较器。

    METHODS AND SYTEMS TO DETECT VOLTAGE CHANGES WITHIN INTEGRATED CIRCUITS
    24.
    发明申请
    METHODS AND SYTEMS TO DETECT VOLTAGE CHANGES WITHIN INTEGRATED CIRCUITS 有权
    在集成电路中检测电压变化的方法和动作

    公开(公告)号:US20110074398A1

    公开(公告)日:2011-03-31

    申请号:US12566956

    申请日:2009-09-25

    IPC分类号: G01R19/17

    摘要: Methods and systems to detect droop events on-chip, which may include a sensor circuit located adjacent to a voltage node to convert a corresponding voltage to a digital count or value indicative of the voltage. The sensor circuit may include an n-stage ring oscillator and an asynchronous counter. The sensor circuit may include circuitry to capture and convert a phase associated with a count to a binary fractional value to increase voltage resolution. Multiple counts associated with the node may be evaluated at the node to identify minimum and maximum counts and corresponding time stamps. More complex evaluation and control circuitry may be shared amongst a plurality of sensor circuits and may include circuitry to generate and compare counts to one or more variable thresholds, circuitry to average counts over time, and memory to store state values associated with the sensors.

    摘要翻译: 检测片上下垂事件的方法和系统,其可以包括位于电压节点附近的传感器电路,以将相应的电压转换为指示电压的数字计数或值。 传感器电路可以包括n级环形振荡器和异步计数器。 传感器电路可以包括用于捕获并将与计数相关联的相位转换成二进制分数值以增加电压分辨率的电路。 可以在节点处评估与节点相关联的多个计数,以识别最小和最大计数以及相应的时间戳。 可以在多个传感器电路之间共享更复杂的评估和控制电路,并且可以包括用于生成和比较与一个或多个可变阈值的计数,用于平均随时间的计数的电路以及用于存储与传感器相关联的状态值的存储器的电路。

    Circuit for detecting power supply voltage drop
    25.
    发明授权
    Circuit for detecting power supply voltage drop 有权
    用于检测电源电压降的电路

    公开(公告)号:US07868622B2

    公开(公告)日:2011-01-11

    申请号:US12188766

    申请日:2008-08-08

    IPC分类号: G01R31/08

    摘要: Provided is a circuit for detecting power supply voltage drop having a small circuit scale. An NMOS transistor (12) generates a source voltage based on a voltage obtained by subtracting an absolute value of a threshold voltage and an overdrive voltage from a power supply voltage with reference to the power supply voltage. An NMOS transistor (17) is turned on/off based on the source voltage of the NMOS transistor (12). A PMOS transistor (15) generates a source voltage based on a voltage obtained by adding an absolute value of a threshold voltage and an overdrive voltage to a ground voltage with reference to the ground voltage. A PMOS transistor (19) is turned on/off based on the source voltage of the PMOS transistor (15).

    摘要翻译: 提供了一种用于检测具有小电路规模的电源电压降的电路。 NMOS晶体管(12)基于通过从电源电压中减去阈值电压的绝对值和过驱动电压获得的电压来产生源极电压。 NMOS晶体管(17)基于NMOS晶体管(12)的源极电压导通/截止。 PMOS晶体管(15)基于通过将接地电压加到接地电压上的阈值电压和过驱动电压的绝对值而获得的电压来产生源极电压。 PMOS晶体管(19)根据PMOS晶体管(15)的源极电压导通/截止。

    Semiconductor device
    26.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US07777512B2

    公开(公告)日:2010-08-17

    申请号:US12042956

    申请日:2008-03-05

    IPC分类号: G01R31/317 G06F11/273

    CPC分类号: G01R31/2884 G01R19/16552

    摘要: A semiconductor device 10a includes a normal circuit 11 and a voltage fluctuation detection circuit 12a connected to a power supply 100 in common with the normal circuit 11. The voltage fluctuation detection circuit 12a includes an inverting amplifier 13a, a switching element 14, which is connected between input and output terminals of the inverting amplifier 13a, and a capacitance element 15 connected to the input terminal of the inverting amplifier 13a. After the normal circuit 11 and the switching element 14 are set to an operating state and ON state, respectively, when the switching element 14 is set to OFF state at an arbitrary time, charge corresponding to a power supply voltage Vc0 at that time accumulates in the capacitance element 15. After the normal circuit 11 is set to a suspended state, a potential VDD of the power supply 100 is set to an arbitrary value, and the inverting amplifier 13a compares the value of a power supply voltage Vc with the voltage value Vc0 corresponding to the charge held in the capacitance element 15.

    摘要翻译: 半导体器件10a包括正常电路11和与普通电路11相同的电源100连接的电压波动检测电路12a。电压波动检测电路12a包括反相放大器13a,开关元件14,其连接 在反相放大器13a的输入和输出端之间,连接到反相放大器13a的输入端的电容元件15。 在正常电路11和开关元件14分别设定为工作状态和接通状态之后,当在任意时刻将开关元件14设定为断开状态时,与此时的电源电压Vc0对应的电荷累积在 电容元件15.在正常电路11被设置为暂停状态之后,电源100的电位VDD被设定为任意值,并且反相放大器13a将电源电压Vc的值与电压值 Vc0对应于保持在电容元件15中的电荷。

    Semiconductor integrated circuit with voltage drop detector
    27.
    发明授权
    Semiconductor integrated circuit with voltage drop detector 失效
    具有电压降检测器的半导体集成电路

    公开(公告)号:US07649373B2

    公开(公告)日:2010-01-19

    申请号:US11878034

    申请日:2007-07-20

    申请人: Yasuhiro Tokunaga

    发明人: Yasuhiro Tokunaga

    IPC分类号: G01R31/26

    CPC分类号: G01R19/16552

    摘要: A semiconductor integrated circuit includes one or more voltage drop detection circuits located at one or more measurement points within the integrated circuit to detect drops in the power supply potential at those points. The voltage drop detection circuits output signals indicating whether the power supply potential is within tolerance, or whether the power supply potential has fallen and corrective action is required. Being located near the measurement points, the voltage drop detection circuits can measure the power supply potential without being disturbed by electrical noise elsewhere in the semiconductor integrated circuit. The signals output by the voltage detection circuits can be reliably brought to external terminals despite the presence of such noise, because the output signals are bi-level signals.

    摘要翻译: 半导体集成电路包括位于集成电路内的一个或多个测量点处的一个或多个电压降检测电路,以检测这些点处的电源电位的下降。 电压降检测电路输出指示电源电位是否在容许范围内的信号,还是电源电位是否下降并且需要校正动作。 位于测量点附近,电压降检测电路可以测量电源电位,而不会受到半导体集成电路其他地方的电噪声的干扰。 由于输出信号是双电平信号,由电压检测电路输出的信号可以被可靠地带到外部端子,尽管存在这种噪声。

    APPARATUS AND METHOD FOR DETECTING TEMPERATURE/VOLTAGE VARIATION OF SEMICONDUCTOR INTEGRATED CIRCUIT
    28.
    发明申请
    APPARATUS AND METHOD FOR DETECTING TEMPERATURE/VOLTAGE VARIATION OF SEMICONDUCTOR INTEGRATED CIRCUIT 审中-公开
    用于检测半导体集成电路的温度/电压变化的装置和方法

    公开(公告)号:US20090326843A1

    公开(公告)日:2009-12-31

    申请号:US12346547

    申请日:2008-12-30

    申请人: Choung Ki Song

    发明人: Choung Ki Song

    IPC分类号: G01R19/00

    摘要: An apparatus for detecting temperature/voltage variations of a semiconductor integrated circuit includes an oscillator configured to generate an oscillation signal whose frequency is varied according to temperature/voltage variations, and a code generator configured to generate a code signal using the oscillation signal, wherein the code signal is used as a criterion for detecting the temperature/voltage variations in a circuit construction exterior of the apparatus for detecting the temperature/voltage variations.

    摘要翻译: 一种用于检测半导体集成电路的温度/电压变化的装置包括:振荡器,其被配置为产生其频率根据温度/电压变化而变化的振荡信号;以及代码发生器,其被配置为使用所述振荡信号生成代码信号,其中, 代码信号被用作检测用于检测温度/电压变化的装置的电路结构外部的温度/电压变化的标准。

    Techniques For Measuring Voltages in a Circuit
    29.
    发明申请
    Techniques For Measuring Voltages in a Circuit 有权
    电路中测量电压的技术

    公开(公告)号:US20090261862A1

    公开(公告)日:2009-10-22

    申请号:US12105262

    申请日:2008-04-17

    申请人: Andy Nguyen Ling Yu

    发明人: Andy Nguyen Ling Yu

    IPC分类号: H03K5/22

    CPC分类号: G01R19/16552

    摘要: A circuit can include a comparator, a resistor divider, a control circuit, and a multiplexer. The comparator compares an internal supply voltage of the circuit to a selected reference voltage. The resistor divider generates reference voltages. The control circuit receives an output signal of the comparator and generates a select signal. The multiplexer transmits one of the reference voltages from the resistor divider to the comparator as the selected reference voltage in response to the select signal.

    摘要翻译: 电路可以包括比较器,电阻分压器,控制电路和多路复用器。 比较器将电路的内部电源电压与选定的参考电压进行比较。 电阻分压器产生参考电压。 控制电路接收比较器的输出信号并产生选择信号。 复用器响应于选择信号,将参考电压中的一个从电阻分压器传送到比较器作为选择的参考电压。

    SYSTEM AND METHOD FOR INDICATING STATUS OF AN ON-CHIP POWER SUPPLY SYSTEM
    30.
    发明申请
    SYSTEM AND METHOD FOR INDICATING STATUS OF AN ON-CHIP POWER SUPPLY SYSTEM 有权
    用于表示片上电源系统的状态的系统和方法

    公开(公告)号:US20090158092A1

    公开(公告)日:2009-06-18

    申请号:US11958680

    申请日:2007-12-18

    IPC分类号: G06F11/07 G06F11/30

    摘要: The status of multiple on-chip power supply systems is indicated for use in modifying chip test flow and diagnosing chip failure. Digital compliance signals are received, each compliance signal associated with one of multiple on-chip power supplies. Each power supply has an associated compliance level, and each compliance signal indicates whether its associated power supply is operating at the associated compliance level. The compliance signals are converted into a power supply status signal indicating status of the compliance signals associated with the power supply. The power supply status signal is output. If a power supply is operating at its associated compliance level, the output power supply status signal indicates that the power supply is passing. If the power supply is not operating at its associated compliance level, the output power supply status signal indicates that the power supply is failing. If a power supply is failing, a memory test may be aborted, simplifying chip failure diagnosis.

    摘要翻译: 多片式电源系统的状态被指示用于修改芯片测试流程和诊断芯片故障。 接收数字符合性信号,每个合规信号与多个片上电源之一相关联。 每个电源具有相关的合规级别,并且每个合规信号指示其相关联的电源是否以相关联的合规级别运行。 合规信号被转换成指示与电源相关联的符合性信号的状态的电源状态信号。 输出电源状态信号。 如果电源工作在相关的合规级别,则输出电源状态信号表示电源正在通过。 如果电源不在其相关的合规级别运行,则输出电源状态信号表示电源出现故障。 如果电源出现故障,可能会中断内存测试,从而简化了芯片故障诊断。