摘要:
Disclosed are systems, devices, circuits, components, mechanisms, and processes in which a switching mechanism can be coupled between components. The switching mechanism is configured to have an on state or an off state, where the on state allows current to pass along a current path. A monitoring mechanism has one or more sensing inputs coupled to sense an electrical characteristic at the current path. The electrical characteristic can be a current, voltage, and/or power by way of example. The monitoring mechanism is configured to output a reporting signal indicating the sensed electrical characteristic. The monitoring mechanism can be integrated with the switching mechanism on a chip.
摘要:
Semiconductor devices comprising at least one voltage sensor for sensing an operating voltage associated with an operational circuit of the semiconductor device. The at least one voltage sensor is configured to generate a signal indicative of a state of the operating voltage. Methods of monitoring a voltage in a semiconductor device include determining a magnitude of an operating voltage for an operational circuit in a semiconductor device. A signal may be generated indicating a state of the operating voltage.
摘要:
A voltage detector circuit of the present invention includes a power supply voltage monitor that generates a monitored voltage resulting from dividing a power supply voltage, which is supplied from a first terminal, based on a resistance ratio between first and second resistors coupled between first and second terminals, a power supply voltage rising ramp detector that generates a boost signal which is enabled, if the power supply voltage rises faster than a preset rapidity to trigger operation switching, a resistance switching circuit that makes a third resistor coupled in parallel with the first resistor and a fourth resistor coupled in parallel with the second resistor active during a period when the boost signal is enabled, and a comparator that compares the monitored voltage with a reference voltage, and that outputs a voltage detection signal.
摘要:
Methods and systems to detect droop events on-chip, which may include a sensor circuit located adjacent to a voltage node to convert a corresponding voltage to a digital count or value indicative of the voltage. The sensor circuit may include an n-stage ring oscillator and an asynchronous counter. The sensor circuit may include circuitry to capture and convert a phase associated with a count to a binary fractional value to increase voltage resolution. Multiple counts associated with the node may be evaluated at the node to identify minimum and maximum counts and corresponding time stamps. More complex evaluation and control circuitry may be shared amongst a plurality of sensor circuits and may include circuitry to generate and compare counts to one or more variable thresholds, circuitry to average counts over time, and memory to store state values associated with the sensors.
摘要:
Provided is a circuit for detecting power supply voltage drop having a small circuit scale. An NMOS transistor (12) generates a source voltage based on a voltage obtained by subtracting an absolute value of a threshold voltage and an overdrive voltage from a power supply voltage with reference to the power supply voltage. An NMOS transistor (17) is turned on/off based on the source voltage of the NMOS transistor (12). A PMOS transistor (15) generates a source voltage based on a voltage obtained by adding an absolute value of a threshold voltage and an overdrive voltage to a ground voltage with reference to the ground voltage. A PMOS transistor (19) is turned on/off based on the source voltage of the PMOS transistor (15).
摘要:
A semiconductor device 10a includes a normal circuit 11 and a voltage fluctuation detection circuit 12a connected to a power supply 100 in common with the normal circuit 11. The voltage fluctuation detection circuit 12a includes an inverting amplifier 13a, a switching element 14, which is connected between input and output terminals of the inverting amplifier 13a, and a capacitance element 15 connected to the input terminal of the inverting amplifier 13a. After the normal circuit 11 and the switching element 14 are set to an operating state and ON state, respectively, when the switching element 14 is set to OFF state at an arbitrary time, charge corresponding to a power supply voltage Vc0 at that time accumulates in the capacitance element 15. After the normal circuit 11 is set to a suspended state, a potential VDD of the power supply 100 is set to an arbitrary value, and the inverting amplifier 13a compares the value of a power supply voltage Vc with the voltage value Vc0 corresponding to the charge held in the capacitance element 15.
摘要:
A semiconductor integrated circuit includes one or more voltage drop detection circuits located at one or more measurement points within the integrated circuit to detect drops in the power supply potential at those points. The voltage drop detection circuits output signals indicating whether the power supply potential is within tolerance, or whether the power supply potential has fallen and corrective action is required. Being located near the measurement points, the voltage drop detection circuits can measure the power supply potential without being disturbed by electrical noise elsewhere in the semiconductor integrated circuit. The signals output by the voltage detection circuits can be reliably brought to external terminals despite the presence of such noise, because the output signals are bi-level signals.
摘要:
An apparatus for detecting temperature/voltage variations of a semiconductor integrated circuit includes an oscillator configured to generate an oscillation signal whose frequency is varied according to temperature/voltage variations, and a code generator configured to generate a code signal using the oscillation signal, wherein the code signal is used as a criterion for detecting the temperature/voltage variations in a circuit construction exterior of the apparatus for detecting the temperature/voltage variations.
摘要:
A circuit can include a comparator, a resistor divider, a control circuit, and a multiplexer. The comparator compares an internal supply voltage of the circuit to a selected reference voltage. The resistor divider generates reference voltages. The control circuit receives an output signal of the comparator and generates a select signal. The multiplexer transmits one of the reference voltages from the resistor divider to the comparator as the selected reference voltage in response to the select signal.
摘要:
The status of multiple on-chip power supply systems is indicated for use in modifying chip test flow and diagnosing chip failure. Digital compliance signals are received, each compliance signal associated with one of multiple on-chip power supplies. Each power supply has an associated compliance level, and each compliance signal indicates whether its associated power supply is operating at the associated compliance level. The compliance signals are converted into a power supply status signal indicating status of the compliance signals associated with the power supply. The power supply status signal is output. If a power supply is operating at its associated compliance level, the output power supply status signal indicates that the power supply is passing. If the power supply is not operating at its associated compliance level, the output power supply status signal indicates that the power supply is failing. If a power supply is failing, a memory test may be aborted, simplifying chip failure diagnosis.