公开(公告)号：US07259902B2

公开(公告)日：2007-08-21

申请号：US11079345

申请日：2005-03-15

申请人： Kazuki Yoshimura ,  Masahisa Okada

发明人： Kazuki Yoshimura ,  Masahisa Okada

IPC分类号： G02F1/03 ,  G02F1/153

CPC分类号： C03C17/3639 ,  C03C17/36 ,  C03C17/3618 ,  C03C17/3621 ,  C03C17/3663 ,  C03C17/3681 ,  C03C2217/77 ,  C03C2217/94 ,  C03C2218/153 ,  C03C2218/154 ,  E06B9/24 ,  G02B5/0221 ,  G02B5/0284

摘要： A reflective photochromic element having a diffuse reflective surface is provided. A diffuse reflection type photochromic element has a transparent thin film having surface irregularities formed on a transparent base and a reflective photochromic thin film layer having surface irregularities formed on that transparent thin film. A diffuse reflection type photochromic glass material includes the aforementioned diffuse reflection type photochromic element as a constituent unit. A method for manufacturing a diffuse reflection type photochromic unit includes the steps of forming a transparent thin film having surface irregularities integrally or separately on a transparent base and forming a reflective photochromic thin film layer having surface irregularities on that transparent thin film.

摘要翻译： 提供具有漫反射表面的反射光致变色元件。 漫反射型光致变色元件具有在透明基底上形成有表面凹凸的透明薄膜和在该透明薄膜上形成有表面凹凸的反射型光致变色薄膜层。 漫反射型光致变色玻璃材料包括上述漫反射型光致变色元件作为构成单元。 漫反射型光致变色单元的制造方法包括以下步骤：在透明基底上形成具有整体或分开的表面凹凸的透明薄膜，并在该透明薄膜上形成具有表面凹凸的反射光致变色薄膜层。

公开(公告)号：US6083341A

公开(公告)日：2000-07-04

申请号：US172502

申请日：1998-10-14

申请人： Chang Wei ,  George Theodore Dalakos

发明人： Chang Wei ,  George Theodore Dalakos

IPC分类号： B05D1/04 ,  B05D7/24 ,  C03C17/00 ,  C03C17/245 ,  C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  H05H1/24 ,  B05D5/06 ,  B32B31/14

CPC分类号： C23C16/45565 ,  B05D1/62 ,  C03C17/002 ,  C03C17/245 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32348 ,  H01J37/32541 ,  H05H1/24 ,  H05H1/2406 ,  B05D1/045 ,  C03C2218/153 ,  H05H2001/2412

摘要： A method for forming coatings of constant thickness on sheets of dielectric substrate (10), which may be curved, includes the step of adhesively applying foil (12) to one side of the dielectric substrate. An electrode (16) is set at a constant distance (D) from the side (10fs) of the substrate to be coated. If the substrate is curved, the electrode is preferably also curved. The region to be coated is evacuated, gaseous precursor materials are infused into the gap, and voltage is applied between the foil (12) and the electrode (16) sufficient to ionize the precursors to a plasma state, whereupon the deposition occurs. The foil may be applied as an adhesive-backed foil. The adhesive may be electrically conductive.

摘要翻译： 在可以弯曲的电介质基板（10）的板上形成恒定厚度的涂层的方法包括将箔（12）粘合地施加到电介质基板的一侧的步骤。 将电极（16）从被涂布的基板的一侧（10fs）设定为恒定距离（D）。 如果基板是弯曲的，则电极优选也是弯曲的。 待涂覆的区域被抽真空，气体前体材料被注入到间隙中，并且电压施加在箔（12）和电极（16）之间，足以将前体电离成等离子体状态，于是发生沉积。 箔可以作为粘合剂背衬的箔施加。 粘合剂可以是导电的。

公开(公告)号：US5851602A

公开(公告)日：1998-12-22

申请号：US703582

申请日：1996-08-26

申请人： Kam Law ,  Robert Robertson ,  Jeffrey Feng

发明人： Kam Law ,  Robert Robertson ,  Jeffrey Feng

IPC分类号： C03C17/245 ,  C23C16/40 ,  C23C16/509 ,  H01L21/28 ,  H01L21/316 ,  B05D3/06

CPC分类号： C23C16/5096 ,  C03C17/245 ,  C23C16/402 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/28008 ,  H01L21/28158 ,  H01L21/31608 ,  C03C2217/213 ,  C03C2218/153 ,  Y10S148/053

摘要： A plasma enhanced chemical vapor deposition process for depositing conformal silicon oxide thin films useful to make thin film transistors which have stable electrical properties and low charge centers onto a substrate comprising flowing a precursor gas mixture of silane and nitrous oxide, the latter at a high rate, at a pressure of at least about 0.8 torr and a temperature of from about 250.degree. to 350.degree. C. The effective volume of the reaction region between the gas manifold inlet and the substrate during processing is kept small.

摘要翻译： 一种等离子体增强化学气相沉积工艺，用于沉积具有稳定电性能和低电荷中心的薄膜晶体管的共形氧化硅薄膜，该薄膜晶体管具有稳定的电性能和低电荷中心，包括使硅烷和一氧化二氮的前体气体混合物高速流动 在至少约0.8托的压力和约250℃至350℃的温度下进行。加工期间气体歧管入口和基底之间的反应区域的有效体积保持较小。

公开(公告)号：US5789284A

公开(公告)日：1998-08-04

申请号：US536977

申请日：1995-09-29

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Akiharu Miyanaga ,  Satoshi Teramoto

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Akiharu Miyanaga ,  Satoshi Teramoto

IPC分类号： H01L21/20 ,  H01L29/786 ,  H01L21/00 ,  H01L21/326 ,  H01L21/84

CPC分类号： H01L21/2022 ,  C03C17/3482 ,  H01L29/78675 ,  C03C2218/152 ,  C03C2218/153

摘要： An object of the present invention is to provide a technology of reducing a nickel element in the silicon film which is crystallized by using nickel. An extremely small amount of nickel is introduced into an amorphous silicon film which is formed on the glass substrate. Then this amorphous silicon film is crystallized by heating. At this time, the nickel element remains in the crystallized silicon film. Then an amorphous silicon film is formed on the surface of the silicon film crystallized with the action of nickel. Then the amorphous silicon film is further heat treated. By carrying out this heat treatment, the nickel element is dispersed from the crystallized silicon film into the amorphous silicon film with the result that the nickel density in the crystallized silicon film is lowered.

公开(公告)号：US5288527A

公开(公告)日：1994-02-22

申请号：US795383

申请日：1991-11-21

申请人： Didier Jousse ,  Pablo Vilato ,  Jean-Claude Bruyere ,  Brigette Reynes

发明人： Didier Jousse ,  Pablo Vilato ,  Jean-Claude Bruyere ,  Brigette Reynes

IPC分类号： C03C17/22 ,  C23C16/34 ,  B05D3/06 ,  B05D5/12

CPC分类号： C23C16/345 ,  C03C17/225 ,  C03C2217/281 ,  C03C2218/153

摘要： A method for preparing silicon nitride films with improved properties and characterized by a limited concentration of hydrogen atoms, a high index of refraction, resistance to attack by a hydrofluoric solution, prevention of diffusion of alkalines and oxygen, and good dielectric properties such as optical gap. The process of preparation uses plasma CVD with ammonia. The invention can be applicable to flat screens, TFT transistors and functional glazings.

摘要翻译： 一种制备具有改进性能的氮化硅膜的方法，其特征在于有限的氢原子浓度，高的折射率，耐氢氟酸的侵蚀性，防止碱和氧的扩散，以及良好的介电性质如光学间隙 。 制备过程使用等离子体CVD与氨。 本发明可适用于平板屏幕，TFT晶体管和功能性玻璃。

公开(公告)号：US4753716A

公开(公告)日：1988-06-28

申请号：US023267

申请日：1987-03-09

申请人： Charles L. Beatty ,  John R. Eyler ,  Clifford H. Watson

发明人： Charles L. Beatty ,  John R. Eyler ,  Clifford H. Watson

IPC分类号： C03C17/22 ,  C04B41/50 ,  C23C18/14 ,  C01B33/00 ,  C04B35/52 ,  C04B35/58

CPC分类号： C23C18/14 ,  C03C17/22 ,  C03C17/225 ,  C04B41/5066 ,  C03C2217/281 ,  C03C2217/282 ,  C03C2218/153 ,  C03C2218/32

摘要： A process for the selective conversion of a polymer coating to a ceramic material is disclosed. This process initially involves the provision of a polymer film which has been generated by R. F. plasma vapor phase polymerization of a monomer comprising an inorganic (i.e. silicon) or an organometallic constituent on a receptive substrate. The polymer is thereafter selectively exposed to a coherent or focused energy source (i.e. CO.sub.2 laser) at the appropriate wavelength and power output to effect in situ conversion of a polymer film to a ceramic deposit which is substantially devoid of carbonaceous impurities. This process is also unique for its ability to provide a ceramic deposit that is firmly adherent on a variety of receptive substrates. The degree of adherence is far superior to ceramic coatings derived by chemical vapor deposition (CVD) techniques. The process lends itself to the formation of ceramic patterns which have application in the microelectronics industry.

摘要翻译： 公开了一种将聚合物涂层选择性转化为陶瓷材料的方法。 该方法最初涉及提供聚合物膜，其通过R.F.等离子体气相聚合产生聚合物膜，该聚合物膜包含无机（即硅）或有机金属成分的单体在接受性底物上。 此后，聚合物以适当的波长和功率输出选择性地暴露于相干或聚焦的能源（即CO 2激光），以使聚合物膜原位转化成基本上不含碳质杂质的陶瓷沉积物。 该工艺也是独特的，因为其提供牢固粘附在各种接受性基材上的陶瓷沉积物的能力。 粘附度远远优于通过化学气相沉积（CVD）技术得到的陶瓷涂层。 该方法适用于微电子工业中应用的陶瓷图案的形成。

公开(公告)号：US11875976B2

公开(公告)日：2024-01-16

申请号：US16933146

申请日：2020-07-20

申请人： AGC FLAT GLASS NORTH AMERICA, INC. ,  AGC GLASS EUROPE ,  ASAHI GLASS CO., LTD.

发明人： John Chambers ,  Peter Maschwitz ,  Yuping Lin ,  Herb Johnson

IPC分类号： H01J37/32 ,  C03C17/245 ,  C23C16/50

CPC分类号： H01J37/32559 ,  C03C17/245 ,  C23C16/50 ,  H01J37/32596 ,  C03C2218/153 ,  H01J2237/3321

摘要： The present invention relates generally to a plasma source utilizing a macro-particle reduction coating and method of using a plasma source utilizing a macro-particle reduction for deposition of thin film coatings and modification of surfaces. More particularly, the present invention relates to a plasma source comprising one or more plasma-generating electrodes, wherein a macro-particle reduction coating is deposited on at least a portion of the plasma-generating surfaces of the one or more electrodes to shield the plasma-generating surfaces of the electrodes from erosion by the produced plasma and to resist the formation of particulate matter, thus enhancing the performance and extending the service life of the plasma source.

公开(公告)号：US20240010552A1

公开(公告)日：2024-01-11

申请号：US18471939

申请日：2023-09-21

申请人： Schott AG

发明人： Yakup Gönüllü ,  Thorsten Schneider ,  Nikolaus Schultz ,  Thorsten Damm

IPC分类号： C03C17/34 ,  G02B5/28

CPC分类号： C03C17/3482 ,  G02B5/289 ,  G02B5/281 ,  C03C2217/91 ,  C03C2218/153

摘要： A coating for a glass substrate is a multilayer coating including at least one silicon layer. The at least one silicon layer has a carbon content gradient over its layer thickness.

公开(公告)号：US20180044229A1

公开(公告)日：2018-02-15

申请号：US15730448

申请日：2017-10-11

申请人： Asahi Glass Company, Limited

发明人： Hiroshi HANEKAWA ,  Nobutaka AOMINE ,  Yuki AOSHIMA ,  Hirotomo KAWAHARA ,  Kazunobu MAESHIGE

IPC分类号： C03C17/245 ,  C03C17/34 ,  G02B5/20 ,  G02B5/08 ,  C23C16/40 ,  C03C17/36 ,  G02B1/11

CPC分类号： C03C17/245 ,  C03C17/3411 ,  C03C17/36 ,  C03C17/366 ,  C03C2217/73 ,  C03C2218/152 ,  C03C2218/153 ,  C23C16/40 ,  G02B1/11 ,  G02B5/08 ,  G02B5/208

摘要： A method of producing a glass substrate having a first layer formed on a surface of the substrate by low-temperature CVD includes preparing the glass substrate and forming the first layer on the glass substrate by the low-temperature CVD. In the glass substrate after forming the first layer, an integrated value after a baseline correction in a wavenumber range of 2600 cm−1 to 3800 cm−1 in a peak due to OH groups obtained by an FTIR measurement on the first layer is 9.0 or less, and the C content of the first layer is 1.64 at % or less.

公开(公告)号：US20170320771A1

公开(公告)日：2017-11-09

申请号：US15656800

申请日：2017-07-21

申请人： CORNING INCORPORATED

发明人： Kaveh Adib ,  Robert Alan Bellman ,  Shandon Dee Hart ,  Guangli Hu ,  Robert George Manley ,  Prantik Mazumder ,  Chandan Kumar Saha

IPC分类号： C03C17/34 ,  C03C23/00 ,  B32B17/06 ,  C03C3/083 ,  C03C15/00 ,  C03C21/00 ,  C03C17/245 ,  C03C17/36 ,  G06F3/041 ,  C03C17/22

CPC分类号： C03C17/3452 ,  B32B17/064 ,  C03C3/083 ,  C03C15/00 ,  C03C17/22 ,  C03C17/245 ,  C03C17/3417 ,  C03C17/3435 ,  C03C17/36 ,  C03C17/3607 ,  C03C17/3621 ,  C03C21/002 ,  C03C23/0055 ,  C03C2217/213 ,  C03C2217/214 ,  C03C2217/241 ,  C03C2217/425 ,  C03C2217/78 ,  C03C2217/948 ,  C03C2218/153 ,  C03C2218/17 ,  C03C2218/31 ,  C03C2218/32 ,  G06F3/041 ,  Y10T428/24983

摘要： One or more aspects of the disclosure pertain to an article including a film disposed on a glass substrate, which may be strengthened, where the interface between the film and the glass substrate is modified, such that the article has an improved average flexural strength, and the film retains key functional properties for its application. Some key functional properties of the film include optical, electrical and/or mechanical properties. In one or more embodiments, the interface exhibits an effective adhesion energy of about less than about 4 J/m2. In some embodiments, the interface is modified by the inclusion of a crack mitigating layer containing an inorganic material between the glass substrate and the film.