Abstract:
Methods and systems for detecting defects on a wafer are provided. One method includes acquiring output for a wafer generated by an inspection system. Different dies are printed on the wafer with different process conditions. The different process conditions correspond to different failure modes for the wafer. The method also includes comparing the output generated for a first of the different dies printed with the different process conditions corresponding to a first of the different failure modes with the output generated for a second of the different dies printed with the different process conditions corresponding to a second of the different failure modes opposite to the first of the different failure modes. In addition, the method includes detecting defects on the wafer based on results of the comparing step.
Abstract:
Various embodiments for generating a defect sample for electron beam review are provided. One method includes combining, on a defect-by-defect basis, one or more first attributes for defects determined by optical inspection of a wafer on which the defects were detected with one or more second attributes for the defects determined by optical review of the wafer thereby generating combined attributes for the defects. The method also includes separating the defects into bins based on the combined attributes for the defects. The bins correspond to different defect classifications. In addition, the method includes sampling one or more of the defects for the electron beam review based on the bins into which the defects have been separated thereby generating a defect review sample for the electron beam review.
Abstract:
Methods and systems for classifying defects detected on a wafer are provided. One method includes inputting information for defects detected on a wafer into each of at least two defect classifiers included in a composite defect classifier. Such a method also includes, for at least one of the defects that is assigned to two or more bins in the composite defect classifier, determining a bin for the at least one of the defects based on a rank assigned to the two or more bins. The rank is assigned to the two or more bins based on one or more characteristics determined for the two or more bins, and the one or more characteristics are determined based on a comparison of predetermined defect classifications for defects in a training set and defect classifications determined for the defects in the training set by the at least two defect classifiers.
Abstract:
Methods and systems for determining wafer inspection coordinates for fixed location(s) on a wafer are provided. One system includes an illumination subsystem configured to direct light to a spot on an edge of a wafer. The spot extends beyond the edge of the wafer. The system also includes a stage that rotates the wafer thereby causing the spot to be scanned over the edge of the wafer. The system also includes a detector configured to detect light from the spot while the spot is being scanned over the edge and to generate output responsive thereto. The system further includes a computer processor configured to determine wafer inspection coordinates of two or more locations on the edge of the wafer based on the output and to determine wafer inspection coordinates of fixed location(s) on the wafer based on the wafer inspection coordinates of the two or more locations on the edge.
Abstract:
Methods and systems for detection of selected defects in relatively noisy inspection data are provided. One method includes applying a spatial filter algorithm to inspection data acquired across an area on a substrate to determine a first portion of the inspection data that has a higher probability of being a selected type of defect than a second portion of the inspection data. The selected type of defect includes a non-point defect. The inspection data is generated by combining two or more raw inspection data corresponding to substantially the same locations on the substrate. The method also includes generating a two-dimensional map illustrating the first portion of the inspection data. The method further includes searching the two-dimensional map for an event that has spatial characteristics that approximately match spatial characteristics of the selected type of defect and determining if the event corresponds to a defect having the selected type.
Abstract:
Various embodiments for classifying defects detected on a wafer are provided. One method includes acquiring an electron beam image generated by a defect review tool for a location of a defect detected on a wafer by a wafer inspection tool. The method also includes determining a classification of the defect based on at least the electron beam image and without input from a user. The method may also include feeding back the classification results to the wafer inspection tool and optimizing the parameters of the tool to maximize sensitivity to the defects of interest.
Abstract:
Systems and methods for inspecting a wafer are provided. One system includes an illumination subsystem configured to illuminate the wafer; a collection subsystem configured to collect light scattered from the wafer and to preserve the polarization of the scattered light; an optical element configured to separate the scattered light collected in different segments of the collection numerical aperture of the collection subsystem, where the optical element is positioned at a Fourier plane or a conjugate of the Fourier plane of the collection subsystem; a polarizing element configured to separate the scattered light in one of the different segments into different portions of the scattered light based on polarization; and a detector configured to detect one of the different portions of the scattered light and to generate output responsive to the detected light, which is used to detect defects on the wafer.
Abstract:
Methods and systems for detecting defects on a wafer are provided. One method includes creating a searchable database for a design for a wafer, which includes assigning values to different portions of the design based on patterns in the different portions of the design and storing the assigned values in the searchable database. Different portions of the design having substantially the same patterns are assigned the same values in the searchable database. The searchable database is configured such that searching of the database can be synchronized with generation of output for the wafer by one or more detectors of a wafer inspection system. Therefore, as the wafer is being scanned, design information for the output can be determined as fast as the output is generated, which enables multiple, desirable design based inspection capabilities.
Abstract:
Systems and methods for determining a position of output of an inspection system in design data space are provided. One method includes merging more than one feature in design data for a wafer into a single feature that has a periphery that encompasses all of the features that are merged. The method also includes storing information for the single feature without the design data for the features that are merged. The information includes a position of the single feature in design data space. The method further includes aligning output of an inspection system for the wafer to the information for the single feature such that positions of the output in the design data space can be determined based on the position of the single feature in the design data space.
Abstract:
Methods for inspecting a wafer and/or predicting one or more characteristics of a device being formed on a wafer are provided. One method includes acquiring images for multiple die printed on a wafer, each of which is printed by performing a double patterning lithography process on the wafer and which include two or more die printed at nominal values of overlay for the double patterning lithography process and one or more die printed at modulated values of the overlay; comparing the images acquired for the multiple die printed at the nominal values to the images acquired for the multiple die printed at the modulated values; and detecting defects in the multiple die printed at the modulated values based on results of the comparing step.