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    Method for automatic offset calculation for deposition of an aligned metal pattern onto selective emitter pattern and subsequent monitoring of alignment
    21.
    发明授权
    Method for automatic offset calculation for deposition of an aligned metal pattern onto selective emitter pattern and subsequent monitoring of alignment 失效
    用于自动偏移计算的方法，用于将对准的金属图案沉积到选择性发射器图案上并随后监视对准

    公开(公告)号：US08673793B2

    公开(公告)日：2014-03-18

    申请号：US13358131

    申请日：2012-01-25

    申请人： Andreas Meisel

    发明人： Andreas Meisel

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： H01L31/1804 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L31/022425 ,  H01L31/022441 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method for calculating an offset value for aligned deposition of a second pattern onto a first pattern, comprising steps of: (a) loading a substrate with the first pattern on a surface of the substrate into a pattern recognition device at an original position inside the pattern recognition device; (b) determining a coordinate of a prescribed point of the first pattern by the pattern recognition device; (c) superimposing the second pattern onto the first pattern on the surface of the substrate; (d) bringing back the substrate with the first pattern and the second pattern into the original position inside the pattern recognition device; (e) determining a coordinate of a prescribed point of the second pattern by the pattern recognition device; wherein the prescribed point of the first pattern corresponds to the prescribed point of the second pattern; and (f) calculating the offset value between the first pattern and the second pattern.

    摘要翻译： 一种用于计算用于将第二图案对准沉积到第一图案上的偏移值的方法，包括以下步骤：（a）将基板的表面上的第一图案的基板加载到图案识别装置内部的原始位置 图案识别装置; （b）通过图案识别装置确定第一图案的规定点的坐标; （c）将第二图案叠加在基板的表面上的第一图案上; （d）将具有第一图案和第二图案的基板返回到图案识别装置内部的原始位置; （e）通过图案识别装置确定第二图案的规定点的坐标; 其中所述第一图案的规定点对应于所述第二图案的规定点; 和（f）计算第一图案和第二图案之间的偏移值。

    Methods of forming a floating junction on a solar cell with a particle masking layer
    22.
    发明授权
    Methods of forming a floating junction on a solar cell with a particle masking layer 有权
    在具有颗粒掩蔽层的太阳能电池上形成浮点的方法

    公开(公告)号：US08513104B2

    公开(公告)日：2013-08-20

    申请号：US13172040

    申请日：2011-06-29

    申请人： Malcolm Abbott ,  Maxim Kelman ,  Eric Rosenfeld ,  Elena Rogojina ,  Giuseppe Scardera

    发明人： Malcolm Abbott ,  Maxim Kelman ,  Eric Rosenfeld ,  Elena Rogojina ,  Giuseppe Scardera

    IPC分类号： H01L21/22 ,  H01L21/38

    CPC分类号： H01L21/2255 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method of forming a floating junction on a substrate is disclosed. The method includes providing the substrate doped with boron atoms, the substrate comprising a front surface and a rear surface. The method also includes depositing a set of masking particles on the rear surface in a set of patterns; and heating the substrate in a baking ambient to a first temperature and for a first time period in order to create a particle masking layer. The method further includes exposing the substrate to a phosphorous deposition ambient at a second temperature and for a second time period, wherein a front surface PSG layer, a front surface phosphorous diffusion, a rear surface PSG layer, and a rear surface phosphorous diffusion are formed, and wherein a first phosphorous dopant surface concentration in the substrate proximate to the set of patterns is less than a second dopant surface concentration in the substrate not proximate to the set of patterns. The method also includes exposing the substrate to a set of etchants for a third time period, wherein the front surface PSG layer and the rear surface PSG layer are substantially removed; depositing a front surface SiNx layer and a rear surface SiNx layer; and forming a rear metal contact on the rear surface through the rear surface SiNx layer proximate to the set of patterns.

    摘要翻译： 公开了一种在衬底上形成浮点的方法。 该方法包括提供掺杂有硼原子的衬底，该衬底包括前表面和后表面。 该方法还包括在一组图案中的后表面上沉积一组掩模颗粒; 以及在烘烤环境中将基底加热到第一温度并且持续第一时间段以便产生颗粒掩蔽层。 该方法还包括在第二温度和第二时间段内将衬底暴露于磷沉积环境中，其中形成前表面PSG层，前表面磷扩散层，后表面PSG层和后表面磷扩散层 ，并且其中靠近所述图案集合的所述衬底中的第一磷掺杂剂表面浓度小于所述衬底中不接近所述图案集合的第二掺杂剂表面浓度。 该方法还包括将衬底暴露于一组第三时间的蚀刻剂，其中基本上去除了前表面PSG层和后表面PSG层; 沉积前表面SiNx层和后表面SiNx层; 以及通过靠近所述一组图案的后表面SiNx层在后表面上形成后金属接触。

    METHODS AND APPARATUS FOR ALIGNING A SET OF PATTERNS ON A SILICON SUBSTRATE
    24.
    发明申请
    METHODS AND APPARATUS FOR ALIGNING A SET OF PATTERNS ON A SILICON SUBSTRATE 失效
    用于对准硅基板上的一组图案的方法和装置

    公开(公告)号：US20120083054A1

    公开(公告)日：2012-04-05

    申请号：US13239814

    申请日：2011-09-22

    申请人： Andreas Meisel ,  Michael Burrows ,  Homer Antoniadis

    发明人： Andreas Meisel ,  Michael Burrows ,  Homer Antoniadis

    IPC分类号： H01L21/66

    CPC分类号： H01L31/1804 ,  H01L22/12 ,  H01L31/022425 ,  Y02E10/547 ,  Y02P70/521

    摘要： The disclosure relates to a method of aligning a set of patterns on a substrate, which includes depositing on the substrate's surface a set of silicon nanoparticles, which includes a set of ligand molecules including a set of carbon atoms. The method involves forming a first set of regions where the nanoparticles are deposited, while the remaining portions of the substrate surface define a second set of regions. The method also includes densifying the set of nanoparticles into a thin film to form a set of silicon-organic zones on the substrate's surface, wherein the first and the second set of regions have respectively first and second reflectivity values, such that the ratio of the second reflectivity value to the first reflectivity value is greater than about 1.1.

    摘要翻译： 本公开涉及一种在衬底上对准一组图案的方法，其包括在衬底表面上沉积一组硅纳米颗粒，其包括一组包含一组碳原子的配体分子。 该方法包括形成沉积纳米颗粒的第一组区域，而衬底表面的其余部分限定第二组区域。 该方法还包括将该组纳米颗粒致密化成薄膜以在基底表面上形成一组硅 - 有机区域，其中第一和第二组区域分别具有第一和第二反射率值，使得 第一反射率值的第二反射率值大于约1.1。

    METHODS OF FORMING A METAL CONTACT ON A SILICON SUBSTRATE
    25.
    发明申请
    METHODS OF FORMING A METAL CONTACT ON A SILICON SUBSTRATE 失效
    在硅基底上形成金属接触的方法

    公开(公告)号：US20120058632A1

    公开(公告)日：2012-03-08

    申请号：US13172035

    申请日：2011-06-29

    申请人： Malcolm Abbott ,  Daniel Kray

    发明人： Malcolm Abbott ,  Daniel Kray

    IPC分类号： H01L21/22 ,  B82Y99/00

    CPC分类号： H01L31/022425 ,  Y02E10/50

    摘要： A method of forming a metal contact on a silicon substrate is disclosed. The method includes depositing a nanoparticle ink on a substrate surface in a pattern, the nanoparticle ink comprising set of nanoparticles and a set of solvents. The method also includes heating the substrate in a baking ambient to a first temperature and for a first time period in order to create a densified nanoparticle layer with a nanoparticle layer thickness of greater than about 50 nm. The method further includes depositing an SiNx layer on the substrate surface, SiNx layer having a SiNx layer thickness of between about 50 nm and about 110 nm; exposing the substrate to an etchant that is selective to the densified nanoparticle layer for a second time period and at a second temperature in order to create a via; and forming a metal contact in the via, wherein an ohmic contact is formed with the silicon substrate.

    摘要翻译： 公开了一种在硅衬底上形成金属接触的方法。 该方法包括以图案沉积在衬底表面上的纳米颗粒油墨，纳米颗粒油墨包含一组纳米颗粒和一组溶剂。 该方法还包括将烘烤环境中的衬底加热到​​第一温度并且持续第一时间段，以便产生具有大于约50nm的纳米颗粒层厚度的致密的纳米颗粒层。 该方法还包括在衬底表面上沉积SiNx层，SiNx层的厚度为约50nm至约110nm; 将所述衬底暴露于对所述致密纳米颗粒层选择性的蚀刻剂，所述蚀刻剂在第二时间段和第二温度下以形成通孔; 以及在所述通孔中形成金属接触，其中与所述硅衬底形成欧姆接触。

    Methods and apparatus for aligning a set of patterns on a silicon substrate
    26.
    发明授权
    Methods and apparatus for aligning a set of patterns on a silicon substrate 有权
    用于在硅衬底上对准一组图案的方法和装置

    公开(公告)号：US08048814B2

    公开(公告)日：2011-11-01

    申请号：US12468540

    申请日：2009-05-19

    申请人： Andreas Meisel ,  Michael Burrows ,  Homer Antoniadis

    发明人： Andreas Meisel ,  Michael Burrows ,  Homer Antoniadis

    IPC分类号： H01L21/47

    CPC分类号： H01L31/1804 ,  H01L22/12 ,  H01L31/022425 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method of aligning a set of patterns on a substrate, the substrate including a substrate surface, is disclosed. The method includes depositing a set of silicon nanoparticles on the substrate surface, the set of nanoparticles including a set of ligand molecules including a set of carbon atoms, wherein a first set of regions is formed where the silicon nanoparticles are deposited and the remaining portions of the substrate surface define a second set of regions. The method also includes densifying the set of silicon nanoparticles into a thin film wherein a set of silicon-organic zones are formed on the substrate surface, wherein the first set of regions has a first reflectivity value and the second set of regions has a second reflectivity value. The method further includes illuminating the substrate surface with an illumination source, wherein the ratio of the second reflectivity value to the first reflectivity value is greater than about 1.1.

    摘要翻译： 公开了一种在衬底上对准一组图案的方法，该衬底包括衬底表面。 该方法包括在衬底表面上沉积一组硅纳米颗粒，所述纳米颗粒组包括一组包含一组碳原子的配体分子，其中形成第一组区域，其中沉积硅纳米颗粒，其余部分 衬底表面限定第二组区域。 所述方法还包括将所述一组硅纳米颗粒致密化成薄膜，其中在基底表面上形成一组硅 - 有机区，其中所述第一组区具有第一反射率值，并且所述第二组区具有第二反射率 值。 该方法还包括用照明源照射衬底表面，其中第二反射率值与第一反射率值的比值大于约1.1。

    Method of forming a passivated densified nanoparticle thin film on a substrate
    27.
    发明申请
    Method of forming a passivated densified nanoparticle thin film on a substrate 失效
    在基材上形成钝化的致密纳米颗粒薄膜的方法

    公开(公告)号：US20110053352A1

    公开(公告)日：2011-03-03

    申请号：US12926252

    申请日：2010-11-04

    申请人： Dmitry Poplavskyy ,  Maxim Kelman ,  Mason Terry

    发明人： Dmitry Poplavskyy ,  Maxim Kelman ,  Mason Terry

    IPC分类号： H01L21/20 ,  B82Y30/00

    CPC分类号： H01L21/02601 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02524 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02628 ,  Y10S977/892

    摘要： A method for forming a passivated densified nanoparticle thin film on a substrate in a chamber is disclosed. The method includes depositing a nanoparticle ink on a first region on the substrate, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30° C. and about 400° C., and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed. The method further includes flowing an oxidizer gas into the chamber; and heating the porous compact to a second temperature between about 600° C. and about 1000° C., and for a second time period of between about 5 seconds and about 1 hour; wherein the passivated densified nanoparticle thin film is formed.

    摘要翻译： 公开了一种在室中的基板上形成钝化的致密纳米颗粒薄膜的方法。 该方法包括在衬底上的第一区域上沉积纳米颗粒油墨，纳米颗粒油墨包括一组IV族半导体颗粒和溶剂。 该方法还包括将纳米颗粒油墨加热到约30℃至约400℃之间的第一温度和约1分钟至约60分钟的第一时间，其中基本上除去溶剂，并且将多孔 形成紧凑。 该方法还包括使氧化剂气体流入室中; 并将所述多孔压块加热至约600℃至约1000℃的第二温度和约5秒至约1小时的第二时间段; 其中形成钝化的致密纳米颗粒薄膜。

    METHODS OF ETCHING SILICON-CONTAINING FILMS ON SILICON SUBSTRATES
    28.
    发明申请
    METHODS OF ETCHING SILICON-CONTAINING FILMS ON SILICON SUBSTRATES 失效
    在硅衬底上蚀刻含硅薄膜的方法

    公开(公告)号：US20110028000A1

    公开(公告)日：2011-02-03

    申请号：US12889958

    申请日：2010-09-24

    申请人： Elena Rogojina ,  Eric Rosenfeld ,  Dmitry Poplavskyy

    发明人： Elena Rogojina ,  Eric Rosenfeld ,  Dmitry Poplavskyy

    IPC分类号： H01L21/306

    CPC分类号： H01L21/30604 ,  H01L21/2255 ,  H01L31/068 ,  Y02E10/547

    摘要： A method for selectively etching a silicon-containing film on a silicon substrate is disclosed. The method includes depositing a silicon-containing film on the silicon substrate. The method further includes baking the silicon-containing film to create a densified silicon-containing film, wherein the densified film has a first thickness. The method also includes exposing the silicon substrate to an aqueous solution comprising NH4F and HF in a ratio of between about 6:1 and about 100:1, at a temperature of between about 20° C. and about 50° C., and for a time period of between about 30 seconds and about 5 minutes; wherein between about 55% and about 95% of the densified silicon-containing film is removed.

    摘要翻译： 公开了一种在硅衬底上选择性地蚀刻含硅膜的方法。 该方法包括在硅衬底上沉积含硅膜。 该方法还包括烘烤含硅膜以产生致密的含硅膜，其中致密化膜具有第一厚度。 该方法还包括将硅衬底暴露于包含NH 4 F和HF的水溶液中，其比例为约6:1至约100:1，温度为约20℃至约50℃，而对于 约30秒至约5分钟的时间; 其中除去致密化的含硅膜的约55％至约95％。