发明申请
- 专利标题： METHODS OF ETCHING SILICON-CONTAINING FILMS ON SILICON SUBSTRATES
- 专利标题（中）： 在硅衬底上蚀刻含硅薄膜的方法
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申请号： US12889958申请日： 2010-09-24
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公开(公告)号： US20110028000A1公开(公告)日： 2011-02-03
- 发明人: Elena Rogojina , Eric Rosenfeld , Dmitry Poplavskyy
- 申请人： Elena Rogojina , Eric Rosenfeld , Dmitry Poplavskyy
- 专利权人： Innovalight, Inc.
- 当前专利权人： Innovalight, Inc.
- 主分类号： H01L21/306
- IPC分类号： H01L21/306
摘要：
A method for selectively etching a silicon-containing film on a silicon substrate is disclosed. The method includes depositing a silicon-containing film on the silicon substrate. The method further includes baking the silicon-containing film to create a densified silicon-containing film, wherein the densified film has a first thickness. The method also includes exposing the silicon substrate to an aqueous solution comprising NH4F and HF in a ratio of between about 6:1 and about 100:1, at a temperature of between about 20° C. and about 50° C., and for a time period of between about 30 seconds and about 5 minutes; wherein between about 55% and about 95% of the densified silicon-containing film is removed.
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