Solutions for on-chip modeling of open termination of fringe capacitance
    21.
    发明授权
    Solutions for on-chip modeling of open termination of fringe capacitance 有权
    用于片状电容开放端接的芯片建模解决方案

    公开(公告)号:US08365117B2

    公开(公告)日:2013-01-29

    申请号:US13158562

    申请日:2011-06-13

    IPC分类号: G06F17/50

    CPC分类号: G06F17/5036 G06F17/5081

    摘要: A computer-implemented method of generating a library object for an integrated circuit design is disclosed. In one embodiment, the method includes: analyzing a pair of integrated circuit design objects for fringe capacitance effects between the pair of integrated circuit design objects; and generating the library object accounting for the fringe capacitance effects prior to completion of a layout design for the integrated circuit design.

    摘要翻译: 公开了一种用于生成用于集成电路设计的库对象的计算机实现的方法。 在一个实施例中,该方法包括:分析一对集成电路设计对象,用于一对集成电路设计对象之间的边缘电容效应; 并在完成集成电路设计的布局设计之前生成考虑到边缘电容效应的库对象。

    ON-CHIP HIGH PERFORMANCE SLOW-WAVE COPLANAR WAVEGUIDE STRUCTURES, METHOD OF MANUFACTURE AND DESIGN STRUCTURE
    22.
    发明申请
    ON-CHIP HIGH PERFORMANCE SLOW-WAVE COPLANAR WAVEGUIDE STRUCTURES, METHOD OF MANUFACTURE AND DESIGN STRUCTURE 失效
    片上高性能慢波共晶波形结构,制造方法和设计结构

    公开(公告)号:US20120139667A1

    公开(公告)日:2012-06-07

    申请号:US12959997

    申请日:2010-12-03

    IPC分类号: H01P3/08

    CPC分类号: H01P3/081 H01P3/003 H01P9/00

    摘要: On-chip high performance slow-wave coplanar waveguide structures, method of manufacture and design structures for integrated circuits are provided herein. The structure includes at least one ground and signal layer provided in a same plane as the at least one ground. The signal layer has at least one alternating wide portion and narrow portion with an alternating thickness. The wide portion extends toward the at least one ground.

    摘要翻译: 本文提供片上高性能慢波共面波导结构,集成电路的制造方法和设计结构。 该结构包括设置在与至少一个地面相同的平面中的至少一个接地和信号层。 信号层具有至少一个交替宽的部分和具有交替厚度的窄部分。 宽部分朝向至少一个地面延伸。

    Coplanar waveguide integrated circuits having arrays of shield conductors connected by bridging conductors
    24.
    发明授权
    Coplanar waveguide integrated circuits having arrays of shield conductors connected by bridging conductors 有权
    具有通过桥接导体连接的屏蔽导体阵列的共面波导集成电路

    公开(公告)号:US07812694B2

    公开(公告)日:2010-10-12

    申请号:US12061950

    申请日:2008-04-03

    IPC分类号: H01P3/08

    CPC分类号: H01P3/003

    摘要: Coplanar waveguide structures and design structures for radiofrequency and microwave integrated circuits. The coplanar waveguide structure includes a signal conductor and ground conductors generally coplanar with the signal conductor. The signal conductor is disposed between upper and lower arrays of substantially parallel shield conductors. Conductive bridges, which are electrically isolated from the signal conductor, are located laterally between the signal conductor and each of the ground conductors. Pairs of the conductive bridges connect one of the shield conductors in the first array with one of the shield conductors in the second array to define closed loops encircling the signal line.

    摘要翻译: 射频和微波集成电路的共面波导结构和设计结构。 共面波导结构包括信号导体和与信号导体大致共面的接地导体。 信号导体设置在基本上平行的屏蔽导体的上和下阵列之间。 与信号导体电隔离的导电桥横向位于信号导体和每个接地导体之间。 一对导电桥将第一阵列中的一个屏蔽导体与第二阵列中的一个屏蔽导体连接,以限定围绕信号线的闭环。

    COPLANAR WAVEGUIDE STRUCTURES AND DESIGN STRUCTURES FOR RADIOFREQUENCY AND MICROWAVE INTEGRATED CIRCUITS
    25.
    发明申请
    COPLANAR WAVEGUIDE STRUCTURES AND DESIGN STRUCTURES FOR RADIOFREQUENCY AND MICROWAVE INTEGRATED CIRCUITS 有权
    用于无线电和微波集成电路的共振波导结构和设计结构

    公开(公告)号:US20090251232A1

    公开(公告)日:2009-10-08

    申请号:US12061950

    申请日:2008-04-03

    IPC分类号: H01P3/00 H01P3/08

    CPC分类号: H01P3/003

    摘要: Coplanar waveguide structures and design structures for radiofrequency and microwave integrated circuits. The coplanar waveguide structure includes a signal conductor and ground conductors generally coplanar with the signal conductor. The signal conductor is disposed between upper and lower arrays of substantially parallel shield conductors. Conductive bridges, which are electrically isolated from the signal conductor, are located laterally between the signal conductor and each of the ground conductors. Pairs of the conductive bridges connect one of the shield conductors in the first array with one of the shield conductors in the second array to define closed loops encircling the signal line.

    摘要翻译: 射频和微波集成电路的共面波导结构和设计结构。 共面波导结构包括信号导体和与信号导体大致共面的接地导体。 信号导体设置在基本上平行的屏蔽导体的上和下阵列之间。 与信号导体电隔离的导电桥横向位于信号导体和每个接地导体之间。 一对导电桥将第一阵列中的一个屏蔽导体与第二阵列中的一个屏蔽导体连接,以限定围绕信号线的闭环。

    T-connections, methodology for designing T-connections, and compact modeling of T-connections
    26.
    发明授权
    T-connections, methodology for designing T-connections, and compact modeling of T-connections 失效
    T型连接,T型连接的设计方法和T型连接的紧凑建模

    公开(公告)号:US08413098B2

    公开(公告)日:2013-04-02

    申请号:US12431887

    申请日:2009-04-29

    IPC分类号: G06F17/50

    摘要: T-connections, methodology for designing T-connections, and compact modeling of T-connections. The T-connections include an electrically conductive T-junction comprising a body and first, second and third integral arms projecting from mutually perpendicular sides of the body, each arm of the three integral arms having a same first width abutting the body and a same length extending away from the body; an electrically conductive step-junction comprising a first section having the first width and an integral and abutting second section having a second width, the second width different from the first width, the first section smoothly abutting and integral with the first arm of the T-junction; and wherein top surfaces of the T-junction and the step-junction are coplanar.

    摘要翻译: T型连接,T型连接的设计方法和T型连接的紧凑建模。 T形连接件包括一个导电T形接头,它包括主体和从本体的相互垂直的侧面突出的第一,第二和第三整体臂,三个整体臂的每个臂具有与主体相邻的相同的第一宽度和相同的长度 远离身体; 导电性阶梯结,其包括具有第一宽度的第一部分和具有第二宽度的整体和邻接的第二部分,所述第二宽度不同于所述第一宽度,所述第一部分平滑地抵接并与所述第二部分 交界处 并且其中T形结和台阶结的顶表面是共面的。

    METHODS OF FABRICATING COPLANAR WAVEGUIDE STRUCTURES
    27.
    发明申请
    METHODS OF FABRICATING COPLANAR WAVEGUIDE STRUCTURES 有权
    制备共振波导结构的方法

    公开(公告)号:US20090249610A1

    公开(公告)日:2009-10-08

    申请号:US12061861

    申请日:2008-04-03

    IPC分类号: H01P11/00

    摘要: Methods for fabricating a coplanar waveguide structure. The method may include forming first and second ground conductors and a signal conductor in a coplanar arrangement between the first and second ground conductors, forming a first coplanar array of substantially parallel shield conductors above the signal conductor and the first and second ground conductors, and forming a second coplanar array of substantially parallel shield conductors below the signal conductor and the first and second ground conductors. The method further includes forming a first plurality of conductive bridges located laterally between the signal conductor and the first ground conductor, and forming a second plurality of conductive bridges located laterally between the signal conductor and the second ground conductor. Each of the first plurality of conductive bridges connects one of the shield conductors in the first array with one of the shield conductors in the second array. Each of the second plurality of conductive bridges connects one of the shield conductors in the first array with one of the shield conductors in the second array.

    摘要翻译: 制造共面波导结构的方法。 该方法可以包括在第一和第二接地导体之间的共面布置中形成第一和第二接地导体和信号导体,在信号导体和第一和第二接地导体之上形成基本上平行的屏蔽导体的第一共面阵列,并形成 在信号导体和第一和第二接地导体下面的基本上平行的屏蔽导体的第二共面阵列。 该方法还包括形成位于信号导体和第一接地导体之间横向定位的第一多个导电桥,以及形成位于信号导体和第二接地导体之间横向定位的第二多个导电桥。 第一多个导电桥中的每一个将第一阵列中的一个屏蔽导体与第二阵列中的屏蔽导体中的一个连接。 第二多个导电桥中的每一个将第一阵列中的一个屏蔽导体与第二阵列中的屏蔽导体中的一个连接。

    Methods of fabricating coplanar waveguide structures
    28.
    发明授权
    Methods of fabricating coplanar waveguide structures 有权
    制造共面波导结构的方法

    公开(公告)号:US08028406B2

    公开(公告)日:2011-10-04

    申请号:US12061861

    申请日:2008-04-03

    IPC分类号: H05K3/10 H01P11/00 H01P3/00

    摘要: Methods for fabricating a coplanar waveguide structure. The method may include forming first and second ground conductors and a signal conductor in a coplanar arrangement between the first and second ground conductors, forming a first coplanar array of substantially parallel shield conductors above the signal conductor and the first and second ground conductors, and forming a second coplanar array of substantially parallel shield conductors below the signal conductor and the first and second ground conductors. The method further includes forming a first plurality of conductive bridges located laterally between the signal conductor and the first ground conductor, and forming a second plurality of conductive bridges located laterally between the signal conductor and the second ground conductor. Each of the first plurality of conductive bridges connects one of the shield conductors in the first array with one of the shield conductors in the second array. Each of the second plurality of conductive bridges connects one of the shield conductors in the first array with one of the shield conductors in the second array.

    摘要翻译: 制造共面波导结构的方法。 该方法可以包括在第一和第二接地导体之间的共面布置中形成第一和第二接地导体和信号导体,在信号导体和第一和第二接地导体之上形成基本上平行的屏蔽导体的第一共面阵列,并形成 在信号导体和第一和第二接地导体下面的基本上平行的屏蔽导体的第二共面阵列。 该方法还包括形成位于信号导体和第一接地导体之间横向定位的第一多个导电桥,以及形成位于信号导体和第二接地导体之间横向定位的第二多个导电桥。 第一多个导电桥中的每一个将第一阵列中的一个屏蔽导体与第二阵列中的屏蔽导体中的一个连接。 第二多个导电桥中的每一个将第一阵列中的一个屏蔽导体与第二阵列中的屏蔽导体中的一个连接。

    T-CONNECTIONS, METHODOLOGY FOR DESIGNING T-CONNECTIONS, AND COMPACT MODELING OF T-CONNECTIONS
    29.
    发明申请
    T-CONNECTIONS, METHODOLOGY FOR DESIGNING T-CONNECTIONS, AND COMPACT MODELING OF T-CONNECTIONS 失效
    T型连接,T型连接方法和T型连接的紧凑型建模

    公开(公告)号:US20100276809A1

    公开(公告)日:2010-11-04

    申请号:US12431887

    申请日:2009-04-29

    摘要: T-connections, methodology for designing T-connections, and compact modeling of T-connections. The T-connections include an electrically conductive T-junction comprising a body and first, second and third integral arms projecting from mutually perpendicular sides of the body, each arm of the three integral arms having a same first width abutting the body and a same length extending away from the body; an electrically conductive step-junction comprising a first section having the first width and an integral and abutting second section having a second width, the second width different from the first width, the first section smoothly abutting and integral with the first arm of the T-junction; and wherein top surfaces of the T-junction and the step-junction are coplanar.

    摘要翻译: T型连接,T型连接的设计方法和T型连接的紧凑建模。 T形连接件包括一个导电T形接头,它包括主体和从本体的相互垂直的侧面突出的第一,第二和第三整体臂,三个整体臂的每个臂具有与主体相邻的相同的第一宽度和相同的长度 远离身体; 导电性阶梯结,其包括具有第一宽度的第一部分和具有第二宽度的整体和邻接的第二部分,所述第二宽度不同于所述第一宽度,所述第一部分平滑地抵接并与所述第二部分 交界处 并且其中T形结和台阶结的顶表面是共面的。

    Tunable dielectric radio frequency microelectromechanical system capacitive switch
    30.
    发明申请
    Tunable dielectric radio frequency microelectromechanical system capacitive switch 有权
    可调介质射频微机电系统电容开关

    公开(公告)号:US20060208823A1

    公开(公告)日:2006-09-21

    申请号:US11374815

    申请日:2006-03-14

    IPC分类号: H01P5/04

    摘要: The invention is a tunable RF MEMS switch developed with a BST dielectric at the contact interface. BST has a very high dielectric constant (>300) making it very appealing for RF MEMS capacitive switches. The tunable dielectric constant of BST provides a possibility of making linearly tunable MEMS capacitive switches. The capacitive tunable RF MEMS switch with a BST dielectric is disclosed showing its characterization and properties up to 40 GHz.

    摘要翻译: 本发明是在接触界面处用BST电介质开发的可调谐RF MEMS开关。 BST具有非常高的介电常数(> 300),使其对RF MEMS电容开关非常有吸引力。 BST的可调谐介电常数提供了线性可调MEMS电容开关的可能性。 公开了具有BST电介质的电容可调谐RF MEMS开关,其显示其高达40GHz的特性和特性。