摘要:
On-chip, high performance, slow-wave coplanar waveguide with through-silicon via structures, method of manufacture and design structures for integrated circuits are provided herein. The method includes forming at least one ground plane layer in a substrate and forming a signal layer in the substrate, in a same plane layer as the at least one ground. The method further includes forming at least one metal filled through-silicon via between the at least one ground plane layer and the signal layer.
摘要:
An on-chip tunable transmission line (t-line), methods of manufacture and design structures are provided. The structure includes a tunable transmission line (t-line) with fixed characteristic impedance comprising functionally-differentiated switches used for inductance and capacitance, respectively.
摘要:
A method, structure, and design structure for an impedance-optimized microstrip transmission line for multi-band and ultra-wide band applications. A method includes: forming a plurality of openings in a ground plane associated with a signal line; forming a plurality of capacitance plates in the plurality of openings; and connecting the plurality of capacitance plates to the signal line with a plurality of posts extending between the signal line and the plurality of capacitance plates.
摘要:
On-chip integrated variable inductors, methods of making and tuning an on-chip integrated variable inductor, and design structures embodying a circuit containing the on-chip integrated variable inductor. The inductor generally includes a signal line configured to carry an electrical signal, a ground line positioned in proximity to the signal line, and at least one control unit electrically coupled with the ground line. The at least one control unit is configured to open and close switch a current path connecting the ground line with a ground potential so as to change an inductance of the signal line.
摘要:
A design structure is embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes a substrate including a silicon layer. Furthermore, the design structure includes a metal layer on a bottom side of the silicon layer and a dielectric layer on a top side of the silicon layer. Additionally, the design structure includes a top-side interconnect of the through-silicon via bandpass filter on a surface of the dielectric layer and a plurality of contacts in the dielectric layer in contact with the top-side interconnect. Further, the design structure includes a plurality of through-silicon vias through the substrate and in contact with the plurality of contacts, respectively, and the metal layer.
摘要:
A method of linking on-chip parasitic coupling capacitance into distributed pre-layout passive models such as distributed transmission line models and on-chip spiral inductor models includes recognizing a passive device such as a distributed transmission line device and an on-chip spiral inductor device, interpreting data obtained from the recognizing the passive device, breaking the passive device into a plurality of sections, the plurality of sections including a terminal of a model call, extracting parameters of the passive device by Layout Versus Schematic (LVS) and parasitic extraction, connecting the terminal to a pre-layout passive network by selectively low and high resistive paths set by the parameters of the passive device depending on whether crossing lines are present or not present in one of the plurality of sections, connecting the terminal to a distributed passive model, and coupling the crossing lines to the terminal via capacitors produced in an extracted netlist with the passive device having distributed coupling to a plurality of crossing lines.
摘要:
Coplanar waveguide structures and design structures for radiofrequency and microwave integrated circuits. The coplanar waveguide structure includes a signal conductor and ground conductors generally coplanar with the signal conductor. The signal conductor is disposed between upper and lower arrays of substantially parallel shield conductors. Conductive bridges, which are electrically isolated from the signal conductor, are located laterally between the signal conductor and each of the ground conductors. Pairs of the conductive bridges connect one of the shield conductors in the first array with one of the shield conductors in the second array to define closed loops encircling the signal line.
摘要:
Methods for distributing a random variable by spatial interpolation with statistical corrections. The method includes assigning a numerical value of the random variable at each vertex of an array of equilateral triangles formed in a planar coordinate frame and defining a plurality of test points at respective spatial locations in the planar coordinate frame that are bounded by the array of equilateral triangles. A numerical value of the random variable is distributed at each of the test points by spatial interpolation from one or more of the numerical values of the random variable assigned at each vertex of the array of equilateral triangles. The method further includes adjusting the numerical value of the random variable distributed at each of the test points with a respective correction factor.
摘要:
On-chip high performance slow-wave coplanar waveguide structures, method of manufacture and design structures for integrated circuits are provided herein. The structure includes at least one ground and signal layer provided in a same plane as the at least one ground. The signal layer has at least one alternating wide portion and narrow portion with an alternating thickness. The wide portion extends toward the at least one ground.
摘要:
A design structure, structure, and method for providing an on-chip variable delay transmission line with a fixed characteristic impedance. A method of manufacturing a transmission line structure includes forming a signal line of the transmission line structure, forming a first ground return structure that causes a first delay and a first characteristic impedance in the transmission line structure, and forming a second ground return structure that causes a second delay and a second characteristic impedance in the transmission line structure. The first delay is different from the second delay, and the first characteristic impedance is substantially the same as the second characteristic impedance.