公开(公告)号：US09871100B2

公开(公告)日：2018-01-16

申请号：US14812864

申请日：2015-07-29

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Jia-Ming Lin ,  Shiu-Ko Jangjian ,  Chun-Che Lin ,  Ying-Lang Wang ,  Wei-Ken Lin ,  Chuan-Pu Liu

IPC: H01L29/06 ,  H01L27/08 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/324 ,  H01L21/762 ,  H01L21/8234 ,  H01L27/088 ,  H01L21/02 ,  H01L29/78

CPC classification number: H01L29/0653 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/02326 ,  H01L21/02337 ,  H01L21/3065 ,  H01L21/31051 ,  H01L21/324 ,  H01L21/76224 ,  H01L21/823431 ,  H01L21/823481 ,  H01L27/0886 ,  H01L29/785

Abstract: A trench structure of a semiconductor device includes a substrate, an isolation structure, and a liner layer. The substrate has a trench therein. The isolation structure is disposed in the trench. The liner layer is disposed between the substrate and the isolation structure. The liner layer includes nitrogen, and the liner layer has spatially various nitrogen concentration.