公开(公告)号：US20220076921A1

公开(公告)日：2022-03-10

申请号：US17531348

申请日：2021-11-19

Applicant: Tokyo Electron Limited

Inventor： Ryuji HISATOMI ,  Chishio KOSHIMIZU ,  Michishige SAITO

IPC: H01J37/32

Abstract: A plasma processing apparatus includes: a processing container; an electrode that places a substrate thereon within the processing container; a plasma generation source that supplies plasma into the processing container; a bias power supply that supplies bias power to the electrode; a part exposed to the plasma in the processing container; a DC power supply that supplies a DC voltage to the part; a controller that executes a process including a first control procedure in which a first state in which the DC voltage has a first voltage value and a second state in which the DC voltage has a second voltage value higher than the first voltage value are periodically repeated, and the first voltage value is applied in a partial period in each cycle of a potential of the electrode, and the second voltage value is applied such that the first state and the second state are continuous.

公开(公告)号：US20210272775A1

公开(公告)日：2021-09-02

申请号：US17176300

申请日：2021-02-16

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU

IPC: H01J37/32

Abstract: The disclosed plasma processing apparatus includes a plasma processing chamber, a substrate support, a bias power source, and a radio frequency power source. The substrate support is disposed in the plasma processing chamber and includes an electrode. The bias power source is coupled to the electrode and configured to generate a bias power having a first frequency. The radio frequency power source is coupled to the plasma processing chamber and configured to generate a radio frequency power having a second frequency higher than the first frequency. The radio frequency power has a first power level in a first period within one cycle of the bias power and has a second power level lower than the first power level in a second period within one cycle of the bias power.

公开(公告)号：US20210074524A1

公开(公告)日：2021-03-11

申请号：US17015100

申请日：2020-09-09

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU

IPC: H01J37/32 ,  H01L21/683

Abstract: A structure efficiently provides bias power to an object placed on a substrate support. A substrate support includes a dielectric portion and at least one electrode. The at least one electrode is located in the dielectric portion to provide bias power to an object placed on the dielectric portion.

公开(公告)号：US20210027980A1

公开(公告)日：2021-01-28

申请号：US17067912

申请日：2020-10-12

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU ,  Naoki MATSUMOTO ,  Satoshi TANAKA ,  Toru ITO

IPC: H01J37/21 ,  H01J37/32

Abstract: A plasma etching apparatus includes a chamber, a susceptor in the chamber, an electrostatic chuck provided on the susceptor, and a high frequency power supply for supplying a high frequency power for generating a plasma in the chamber. The plasma etching apparatus also includes a gas inlet port provided in the chamber and configured to supply an etching gas, and a ring disposed in an outer periphery of a substrate supported by the electrostatic chuck that is positioned over the susceptor. An inner diameter of the ring is larger than an outer diameter of the substrate. The ring is separately positioned at a separation distance over the susceptor. The substrate is etched by using the plasma generated by the high frequency power that is supplied by the high frequency power supply. The separation distance between the ring and the susceptor is adjustable when the substrate is etched.

公开(公告)号：US20210020407A1

公开(公告)日：2021-01-21

申请号：US16919650

申请日：2020-07-02

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU

IPC: H01J37/32 ,  H01J37/248

Abstract: A plasma processing method according to an exemplary embodiment includes preparing a substrate in a chamber of a plasma processing apparatus. The substrate is disposed on a substrate support in the chamber. The substrate support includes a lower electrode and an electrostatic chuck. The electrostatic chuck is provided on the lower electrode. The plasma processing method further includes applying a positive voltage to a conductive member when plasma is being generated in the chamber for plasma processing on the substrate. The conductive member extends closer to a grounded side wall of the chamber than the substrate.

公开(公告)号：US20200219701A1

公开(公告)日：2020-07-09

申请号：US16737335

申请日：2020-01-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Chishio KOSHIMIZU

IPC: H01J37/32 ,  H01G5/013

Abstract: An apparatus for plasma processing includes a chamber, a substrate support having a lower electrode and an electrostatic chuck disposed on the lower electrode and configured to support a substrate mounted on the electrostatic chuck in the chamber, and a radio frequency power supply configured to supply a radio frequency power to generate plasma in the chamber. Further, in the apparatus, a bias power supply supplies a bias power. A first electrical path electrically connects the bias power supply and the lower electrode, and a second electrical path that is different from the first electrical path and the lower electrode is configured to supply the bias power from the lower electrode or the first electrical path to an edge ring disposed to surround an edge of the substrate. Further, an impedance adjuster provides a variable impedance to the second electrical path.

公开(公告)号：US20200111645A1

公开(公告)日：2020-04-09

申请号：US16708856

申请日：2019-12-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akira KOSHIISHI ,  Masaru SUGIMOTO ,  Kunihiko HINATA ,  Noriyuki KOBAYASHI ,  Chishio KOSHIMIZU ,  Ryuji OHTANI ,  Kazuo KIBI ,  Masashi SAITO ,  Naoki MATSUMOTO ,  Yoshinobu OHYA ,  Manabu IWATA ,  Daisuke YANO ,  Yohei YAMAZAWA ,  Hidetoshi HANAOKA ,  Toshihiro HAYAMI ,  Hiroki YAMAZAKI ,  Manabu SATO

IPC: H01J37/32 ,  H01L21/67

Abstract: A plasma processing method includes executing an etching process that includes supplying an etching gas into a process container in which a target substrate is supported on a second electrode serving as a lower electrode, and applying an RF power for plasma generation and an RF power for ion attraction to turn the etching gas into plasma and to subject the target substrate to etching. The etching process includes applying a negative DC voltage to a first electrode serving as an upper electrode during the etching to increase an absolute value of self-bias on the first electrode. The etching process includes releasing DC electron current generated by the negative DC voltage to ground through plasma and a conductive member disposed as a ring around the first electrode, by using a first state where the conductive member is connected to a ground potential portion.

公开(公告)号：US20190108975A1

公开(公告)日：2019-04-11

申请号：US16214567

申请日：2018-12-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun YAMAWAKU ,  Tatsuo MATSUDO ,  Chishio KOSHIMIZU

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a high frequency antenna having first and second antenna elements. One end of the first antenna element is grounded and the other end thereof is connected to a high frequency power supply. One end of the second antenna element is an open end and the other end thereof is connected to either one of the one end and the other end of the first antenna element, a line length of the second antenna element having a value obtained by multiplying ((λ/4)+nλ/2) by a fractional shortening (λ is a wavelength of high frequency in vacuum and n is a natural number). A circuit viewed from the high frequency power supply toward the high frequency antenna is configured to generate, when a frequency of a high frequency power is changed, two resonant frequencies by an adjustment of the impedance adjustment unit.

公开(公告)号：US20180294137A1

公开(公告)日：2018-10-11

申请号：US16004898

申请日：2018-06-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Chishio KOSHIMIZU ,  Naoki Matsumoto ,  Satoshi Tanaka ,  Toru Ito

IPC: H01J37/21 ,  H01J37/32

CPC classification number: H01J37/21 ,  H01J37/32091 ,  H01J37/32155 ,  H01J37/32165 ,  H01J37/32348 ,  H01J37/32449 ,  H01J37/32467 ,  H01J37/32642 ,  H01J2237/21 ,  H01J2237/334

Abstract: A plasma processing apparatus includes a processing chamber, a first electrode and a second electrode disposed to face each other, a high frequency power supply unit for applying a high frequency power to either the first electrode or the second electrode, a processing gas supply unit for supplying a processing gas to a processing space, and a main dielectric member provided at a substrate mounting portion on a main surface of the first electrode. A focus ring is attached to the first electrode to cover a peripheral portion of the main surface of the first electrode and a peripheral dielectric member is provided in a peripheral portion on the main surface of the first electrode so that an electrostatic capacitance per unit area applied between the first electrode and the focus ring is smaller than that applied between the first electrode and the substrate by the main dielectric member.

公开(公告)号：US20180231369A1

公开(公告)日：2018-08-16

申请号：US15952372

申请日：2018-04-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Chishio KOSHIMIZU ,  Tatsuo MATSUDO

IPC: G01B9/02 ,  H01J37/32 ,  G01K11/12

CPC classification number: G01B9/02021 ,  G01B9/02044 ,  G01B9/0209 ,  G01K11/125 ,  H01J37/32522 ,  H01J37/32935 ,  H01J37/32972

Abstract: A temperature measuring method of a component of a substrate processing chamber including a surface being worn or being deposited with a foreign material by using. The method includes: providing data representing a relationship between a temperature of the component and an optical path length of a predetermined path within the component; measuring an optical path length of the predetermined path within the component by using optical interference of reflection lights of a low-coherence light from the component when the low-coherence light is irradiated onto the component to travel through the predetermined path; and obtaining a temperature of the component by comparing the measured optical path length with the data.