公开(公告)号：US20210027980A1

公开(公告)日：2021-01-28

申请号：US17067912

申请日：2020-10-12

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU ,  Naoki MATSUMOTO ,  Satoshi TANAKA ,  Toru ITO

IPC: H01J37/21 ,  H01J37/32

Abstract: A plasma etching apparatus includes a chamber, a susceptor in the chamber, an electrostatic chuck provided on the susceptor, and a high frequency power supply for supplying a high frequency power for generating a plasma in the chamber. The plasma etching apparatus also includes a gas inlet port provided in the chamber and configured to supply an etching gas, and a ring disposed in an outer periphery of a substrate supported by the electrostatic chuck that is positioned over the susceptor. An inner diameter of the ring is larger than an outer diameter of the substrate. The ring is separately positioned at a separation distance over the susceptor. The substrate is etched by using the plasma generated by the high frequency power that is supplied by the high frequency power supply. The separation distance between the ring and the susceptor is adjustable when the substrate is etched.