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    Method and device for transmitting synchronization signal for device-to-device communication
    21.
    发明授权
    Method and device for transmitting synchronization signal for device-to-device communication 有权

    公开(公告)号：US10129842B2

    公开(公告)日：2018-11-13

    申请号：US15310091

    申请日：2015-05-11

    Applicant: Samsung Electronics Co., Ltd

    Inventor： Cheol Jeong ,  Hyun-Seok Ryu ,  Seung-Hoon Park ,  Peng Xue ,  Hyun-Kyu Yu ,  Sang-Won Choi

    IPC: H04W72/00 ,  H04W56/00 ,  H04W52/24 ,  H04W72/04

    Abstract: The present invention relates to a communication technique for converging IoT technology with a 5G communication system for supporting a higher data transmission rate than that of a 4G system and subsequent systems, and a system thereof. The present invention can be applied to intelligent services on the basis of 5G communication technology and IoT-related technology (for example, smart home, smart building, smart city, smart car or connected car, health care, digital education, retail, security, and safety related services and the like). The present invention provides a method and a device for transmitting a synchronization signal for device-to-device (D2D) communication. According to the present invention, a first terminal receives a D2D synchronization signal (D2DSS) and a physical D2D synchronization channel (PD2DSCH) corresponding to the D2DSS from a second terminal, and transmits the D2DSS to the second terminal according to a method preassigned with the second terminal so as to indicate that the first terminal has successfully received the D2DSS or the PD2DSCH.

    METHOD FOR SUPPORTING HARQ IN COMMUNICATION SYSTEM USING UNLICENSED FREQUENCY BAND AND DEVICE HAVING APPLIED SAME
    23.
    发明申请
    METHOD FOR SUPPORTING HARQ IN COMMUNICATION SYSTEM USING UNLICENSED FREQUENCY BAND AND DEVICE HAVING APPLIED SAME 审中-公开

    公开(公告)号：US20180131473A1

    公开(公告)日：2018-05-10

    申请号：US15565399

    申请日：2016-03-31

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jung-Min Moon ,  Seung-Hoon Park ,  Jung-Soo Jung ,  Sun-Heui Ryoo ,  Byoung-Hoon Jung

    IPC: H04L1/18 ,  H04W72/04 ,  H04L5/00 ,  H04W74/00

    CPC classification number: H04L1/1812 ,  H04L1/18 ,  H04L5/001 ,  H04L5/0044 ,  H04L5/0051 ,  H04L5/0055 ,  H04W16/14 ,  H04W72/0413 ,  H04W72/0453 ,  H04W74/004

    Abstract: The present invention relates to 5G or pre-5G communication system for supporting a higher data transmission rate after 4G communication system such as LTE. The present invention provides a method and a device for executing a hybrid automatic repeat request (HARQ) through a channel in an unlicensed frequency band. More particularly, a method for executing a HARQ through a channel in an unlicensed frequency band in a terminal of a communication system comprises the procedures of: requesting uplink scheduling; if a first uplink (UL) grant with respect to the scheduling request is received, sensing whether or not a channel is clear; transmitting first uplink data on the basis of whether or not the channel is clear; if negative acknowledge (NACK) with respect to the first uplink grant and a second uplink grant are received, sensing whether or not the channel is clear; and transmitting second uplink data and an indicator, which indicates whether or not the second uplink data transmission is a retransmission, on the basis of whether or not the channel is clear, wherein the indicator, which indicates for retransmission, is determined on the basis of a reference signal (RS) detection failure indicator, of a base station, which is transmitted from the base station together with the second uplink grant.

    Method and Apparatus for Performing State Transition for Device-to-Device Communication
    27.
    发明申请
    Method and Apparatus for Performing State Transition for Device-to-Device Communication 审中-公开

    公开(公告)号：US20170208640A1

    公开(公告)日：2017-07-20

    申请号：US15473236

    申请日：2017-03-29

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kyung-Kyu Kim ,  Young-Bin Chang ,  Seung-Hoon Park ,  Sang-Kyu Baek ,  Sung-Jin Lee

    IPC: H04W76/02 ,  H04W8/00 ,  H04W76/04

    CPC classification number: H04W76/14 ,  H04W8/005 ,  H04W76/27 ,  H04W88/06 ,  H04W88/08

    Abstract: A method and apparatus for performing a state transition for Device to Device (D2D) communication are provided. The method includes determining whether D2D initiation is required, while a terminal is operating in a first or a second state defined by EPS (Enhanced Packet System) Mobility Management (EMM)-Deregistered and EPS Connection Management (ECM)-IDLE at a Non-Access Stratum (NAS) layer and Radio Resource Control (RRC)-IDLE. If the D2D initiation is required, the method includes transitioning to a third state defined by EMM-Registered and ECM/RRC-Connected and performing the D2D initiation through a mobile communication network. If a deactivation condition is satisfied or a D2D state update is completed in the third state, the method includes transitioning to a fourth state defined by EMM-Registered and ECM/RRC-IDLE, and if a state update or scheduling for D2D communication is required in the fourth state, the method includes transitioning to the third state.

    Semiconductor devices and methods of manufacturing the same
    30.
    发明授权
    Semiconductor devices and methods of manufacturing the same 有权
    半导体器件及其制造方法

    公开(公告)号：US09412610B2

    公开(公告)日：2016-08-09

    申请号：US14637420

    申请日：2015-03-04

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Seung-Hoon Park ,  Deog-Ja Koo ,  Gyung-Jin Min

    IPC: H01L21/3065 ,  H01L21/768 ,  H01L23/48

    CPC classification number: H01L21/30655 ,  H01L21/76871 ,  H01L21/76879 ,  H01L21/76898 ,  H01L23/481 ,  H01L2224/16145

    Abstract: A method of manufacturing a semiconductor device is disclosed. In the method, a substrate having a first surface and a second surface is provided. The second surface is opposed to the first surface. A via hole is formed to penetrate the substrate from the first surface toward the second surface. The via hole includes a first portion and a second portion. The first portion has a first sidewall which is substantially perpendicular to the first surface. The second portion has a second sidewall which gradually decreases from the first surface toward the second surface, and has a bottom surface that substantially flat. A seed pattern is formed on the first sidewall of the first portion, the second sidewall of the second portion and the bottom surface of the second portion of the via hole. A first thickness (Vt) of the seed pattern on the first sidewall of the first portion is less than a second thickness (VIt) of the seed pattern on the second sidewall of the second portion. A through via is formed to fill the via hole.

    Abstract translation: 公开了制造半导体器件的方法。 在该方法中，设置具有第一表面和第二表面的基板。 第二表面与第一表面相对。 通孔形成为从第一表面朝向第二表面穿透基板。 通孔包括第一部分和第二部分。 第一部分具有基本上垂直于第一表面的第一侧壁。 第二部分具有从第一表面朝向第二表面逐渐减小的第二侧壁，并且具有基本平坦的底面。 在第一部分的第一侧壁，第二部分的第二侧壁和通孔的第二部分的底表面上形成种子图案。 第一部分的第一侧壁上的种子图案的第一厚度（Vt）小于第二部分的第二侧壁上的种子图案的第二厚度（VIt）。 形成通孔以填充通孔。

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