公开(公告)号：US20230369039A1

公开(公告)日：2023-11-16

申请号：US18315322

申请日：2023-05-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunhyea KO ,  Daihyun Kim ,  Thanh Cuong Nguyen ,  Soyoung Lee ,  Jihyun Lee ,  Hoon Han ,  Byungkeun Hwang ,  Hiroyuki Uchiuzou ,  Kiyoshi Murata ,  Tomoharu Yoshino ,  Youjoung Cho

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/0212 ,  H01L21/02307 ,  H01L21/02315 ,  H01L21/31133 ,  H01L21/31111

Abstract: A method of manufacturing a semiconductor device is provided. The method includes providing a first layer having a first surface and a second layer having a second surface orthogonal to the first surface in a vertical direction, forming an inhibitor layer conformally on the first surface and the second surface, exposing the second surface by selectively removing the inhibitor layer on the second surface among the first surface and the second surface, the exposing of the second surface may include selectively removing an edge portion of the inhibitor layer on the first surface, the edge portion contacting the second surface, and forming an interest layer on the exposed second surface.

公开(公告)号：US11795550B2

公开(公告)日：2023-10-24

申请号：US17313534

申请日：2021-05-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungah Kim ,  Mihyun Park ,  Jinwoo Lee ,  Keonyoung Kim ,  Hyosan Lee ,  Hoon Han ,  Jin Uk Lee ,  Jung Hun Lim

IPC: C23F1/26 ,  C23F1/30 ,  H01L21/311 ,  H01L21/306 ,  B81C1/00 ,  C09K13/04

CPC classification number: C23F1/26 ,  B81C1/00539 ,  C09K13/04 ,  C23F1/30 ,  H01L21/30604 ,  H01L21/31111

Abstract: A method of etching a metal barrier layer and a metal layer is provided. The method includes forming the metal barrier layer and the metal layer on a substrate, and using an etching composition to etch the metal barrier layer and the metal layer. The etching composition may include an oxidant selected from nitric acid, bromic acid, iodic acid, perchloric acid, perbromic acid, periodic acid, sulfuric acid, methane sulfonic acid, p-toluenesulfonic acid, benzenesulfonic acid, or a combination thereof, a metal etching inhibitor including a compound expressed by Chemical Formula 1, and a metal oxide solubilizer selected from phosphoric acid, phosphate, carboxylic acid having 3 to 20 carbon atoms, or a combination thereof.

公开(公告)号：USD975074S1

公开(公告)日：2023-01-10

申请号：US29762008

申请日：2020-12-14

Applicant: Samsung Electronics Co., Ltd.

Designer： Seo Lee ,  Seungchan Lee ,  Sangchulmatt Lee ,  Hoon Han ,  Yunjeong Ji ,  Seonkeun Park ,  Duyeong Choi

公开(公告)号：USD964357S1

公开(公告)日：2022-09-20

申请号：US29763653

申请日：2020-12-23

Applicant: Samsung Electronics Co., Ltd.

Designer： Seo Lee ,  Seungchan Lee ,  Sangchulmatt Lee ,  Hoon Han ,  Yunjeong Ji ,  Seonkeun Park ,  Duyeong Choi

公开(公告)号：US20180142151A1

公开(公告)日：2018-05-24

申请号：US15816699

申请日：2017-11-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin-Woo Lee ,  Hoon Han ,  Keon-Young Kim ,  Jung-Hun Lim ,  Jin-Uk Lee ,  Jae-Wan Park

IPC: C09K13/08 ,  H01L21/311 ,  C09K13/06

CPC classification number: C09K13/08 ,  C09K13/06 ,  H01L21/31111 ,  H01L27/1157 ,  H01L27/11582

Abstract: An etchant composition includes an inorganic acid, a siloxane compound, an ammonium compound, and a solvent, wherein the siloxane compound is represented by General Formula (I): A method of fabricating an integrated circuit device includes forming a structure on a substrate, the structure having a surface on which an oxide film and a nitride film are exposed; and selectively removing the nitride film from the oxide film and the nitride film by bringing the etchant composition into contact with the structure.

公开(公告)号：US09507255B2

公开(公告)日：2016-11-29

申请号：US14750651

申请日：2015-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ho-young Kim ,  Dong-min Kang ,  Sung-bae Kim ,  Hoon Han ,  Hong-kwon Youn ,  Hyo-sun Lee ,  Young-taek Hong

IPC: C23G1/02 ,  G03F1/82 ,  C11D11/00 ,  C11D7/26 ,  C11D7/34 ,  B08B3/00 ,  B08B3/04

CPC classification number: G03F1/82 ,  B08B3/00 ,  B08B3/04 ,  C11D7/26 ,  C11D7/34 ,  C11D11/0047

Abstract: In a method of manufacturing an integrated circuit (IC) device, a photomask is wet-processed using a cleaning composition comprising an organic acid, an oxidizing agent, and deionized water (DIW).

Abstract translation: 在制造集成电路（IC）装置的方法中，使用包含有机酸，氧化剂和去离子水（DIW）的清洁组合物湿光处理光掩模。

公开(公告)号：USD1072811S1

公开(公告)日：2025-04-29

申请号：US29968383

申请日：2024-10-16

Applicant: Samsung Electronics Co., Ltd.

Designer： Seo Lee ,  Seungchan Lee ,  Sangchulmatt Lee ,  Hoon Han ,  Yunjeong Ji ,  Seonkeun Park ,  Duyeong Choi

公开(公告)号：US12254234B2

公开(公告)日：2025-03-18

申请号：US18608190

申请日：2024-03-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngchan Woo ,  Donghee Kang ,  Choonkyoung Moon ,  Christian Park ,  Joayoung Lee ,  Jiwon Jeon ,  Hoon Han

IPC: G09G5/00 ,  G06F3/01 ,  G06F3/14 ,  G06T11/00 ,  G06V20/20 ,  G06F3/0482

Abstract: A method and a device capable of supporting various display methods using an electronic device and/or glasses-type wearable electronic device (e.g., AR glasses) in an augmented reality (AR) are provided. An AR providing device for AR services includes a display and a processor. The processor is configured to provide content through an AR screen, detect a specified external object through the AR screen while providing the content, determine a display mode for providing the content, based on detection of the specified external object, control to display the content through a display of the specified external object, based on the determined display mode, and perform control to display the content through a virtual display area associated with the specified external object on the AR screen, based on the determined display mode.

公开(公告)号：USD1053187S1

公开(公告)日：2024-12-03

申请号：US29900764

申请日：2023-08-24

Applicant: Samsung Electronics Co., Ltd.

Designer： Seo Lee ,  Seungchan Lee ,  Sangchulmatt Lee ,  Hoon Han ,  Yunjeong Ji ,  Seonkeun Park ,  Duyeong Choi

公开(公告)号：US12046464B2

公开(公告)日：2024-07-23

申请号：US17719561

申请日：2022-04-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ga Young Song ,  Mi Hyun Park ,  Jong Kyoung Park ,  Jung Youl Lee ,  Hyun Jin Kim ,  Hyo San Lee ,  Han Sol Lim ,  Hoon Han

IPC: C11D1/00 ,  C11D3/20 ,  C11D3/37 ,  H01L21/02

CPC classification number: H01L21/02041 ,  C11D3/2003 ,  C11D3/2079 ,  C11D3/3749

Abstract: A substrate cleaning composition, a method of cleaning a substrate using the same, and a method of fabricating a semiconductor device using the same, the substrate cleaning composition including a styrene copolymer including a first repeating unit represented by Formula 1-1a and a second repeating unit represented by Formula 1-1b; an additive represented by Formula 2-1; and an alcoholic solvent having a solubility of 500 g/L or less in deionized water,