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公开(公告)号：US11142685B2
公开(公告)日：2021-10-12
申请号：US16245544
申请日：2019-01-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yuho Won , Nayoun Won , Sungwoo Hwang , Eun Joo Jang , Soo Kyung Kwon , Yong Wook Kim , Jihyun Min , Garam Park , Shang Hyeun Park , Hyo Sook Jang , Shin Ae Jun , Yong Seok Han
IPC: H01L51/50 , C09K11/08 , C08L57/10 , G02F1/13357 , H01L27/32 , C09K11/02 , C09K11/56 , C09K11/70 , C09K11/88 , H05B33/14 , B82Y40/00 , B82Y20/00 , G02F1/1335
Abstract: A cadmium free quantum dot not including cadmium and including: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, a composition and composite including the same, and an electronic device.
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公开(公告)号：US08847273B2
公开(公告)日：2014-09-30
申请号：US13656213
申请日：2012-10-19
Applicant: Samsung Electronics Co. Ltd.
Inventor： Eun Joo Jang , Shin Ae Jun , Hyun A Kang , Hyo Sook Jang , Soo Kyung Kwon
IPC: H01L29/24 , H01L33/00 , C08G77/388 , H05B33/08 , C09D183/04
CPC classification number: C09D183/04 , C08G77/388 , H01L33/507 , H01L33/56 , H01L33/60 , H01L2224/48091 , H05B33/0803 , H01L2924/00014
Abstract: A light emitting diode that includes: a light source; a buffer layer disposed on the light source and including a first matrix polymer; a polymer layer disposed on the buffer layer and including an organic/inorganic hybrid polymer; and an emission layer disposed on the polymer layer and including a light emitting particle dispersed in a second matrix polymer, wherein one selected from the light source, the buffer layer, the emission layer, and a combination thereof includes one selected from sulfurous component, a nitrogenous component, and a combination thereof.
Abstract translation: 一种发光二极管，包括：光源; 缓冲层，其设置在所述光源上并且包括第一基质聚合物; 设置在缓冲层上并包含有机/无机杂化聚合物的聚合物层; 以及设置在所述聚合物层上并包括分散在第二基质聚合物中的发光颗粒的发射层，其中选自光源，缓冲层，发光层及其组合的发光层包括选自亚硫酸成分， 含氮组分及其组合。
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23.发明授权公开(公告)号：US12152184B2
公开(公告)日：2024-11-26
申请号：US17243741
申请日：2021-04-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Soo Kyung Kwon , Yong Wook Kim , Seon-Yeong Kim , Ji-Yeong Kim , Jihyun Min , Eun Joo Jang , Seonmyeong Choi , Sungwoo Hwang
IPC: C09K11/88 , C09K11/56 , H10K85/10 , B82Y20/00 , B82Y30/00 , B82Y40/00 , H10K50/115 , H10K50/16 , H10K50/17
Abstract: A quantum dot including a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium, and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, and selenium, sulfur, or a combination thereof, wherein the quantum dot does not include cadmium, a mole ratio of tellurium relative to selenium in the first semiconductor nanocrystal is greater than about 1:1, a mole ratio of a sum of selenium and sulfur relative to in the quantum dot is greater than about 1:1, a wavelength of a maximum emission peak of the quantum dot is in a range of about 500 nanometers (nm) to about 550 nm, and the quantum dot has quantum efficiency (QY) of greater than or equal to about 30%, a quantum dot-polymer composite including the quantum dot, a display device including the quantum dot-polymer composite, and an electroluminescent device including the quantum dot.
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公开(公告)号：US12049581B2
公开(公告)日：2024-07-30
申请号：US18105911
申请日：2023-02-06
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Ji-Yeong Kim , Soo Kyung Kwon , Seon-Yeong Kim , Yong Wook Kim , Eun Joo Jang
CPC classification number: C09K11/54 , C09K11/02 , C09K11/57 , C09K11/58 , C09K11/64 , C09K11/88 , B82Y20/00
Abstract: A core-shell quantum dot comprising zinc, a core comprising a first semiconductor nanocrystal material; and a semiconductor nanocrystal shell disposed on the core, wherein the core-shell quantum dot does not comprise cadmium, and does comprise zinc, tellurium, selenium, and aluminum.
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公开(公告)号：US11742443B2
公开(公告)日：2023-08-29
申请号：US17171198
申请日：2021-02-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Shin Ae Jun , Eun Joo Jang , Soo Kyung Kwon , Taek Hoon Kim , Won Joo Lee
IPC: H01L31/0296 , H01L31/0304 , H01L31/0352 , B82Y40/00 , B82Y30/00
CPC classification number: H01L31/0296 , H01L31/0304 , H01L31/035218 , B82Y30/00 , B82Y40/00 , Y02E10/544 , Y10S977/774 , Y10S977/89
Abstract: A nanocrystal including a core including a Group III element and a Group V element, and a monolayer shell on the surface of the core, the shell including a compound of the formula ZnSexS(1-x), wherein 0≤x≤1, and wherein an average mole ratio of Se:S in the monolayer shell ranges from about 2:1 to about 20:1.
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Patent Agency Ranking
26.发明授权公开(公告)号：US11525083B2
公开(公告)日：2022-12-13
申请号：US16851539
申请日：2020-04-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Soo Kyung Kwon , Seon-Yeong Kim , Yong Wook Kim , Ji-Yeong Kim , Eun Joo Jang
Abstract: A quantum dot comprising zinc, tellurium, and selenium and not comprising cadmium, wherein a maximum luminescent peak of the quantum dot is present in a wavelength range of greater than about 470 nanometers (nm) and a quantum efficiency of the quantum dot is greater than or equal to about 10%, and wherein the quantum dot comprises a core comprising a first semiconductor nanocrystal and a semiconductor nanocrystal shell disposed on the core.
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公开(公告)号：US11505740B2
公开(公告)日：2022-11-22
申请号：US17490552
申请日：2021-09-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yuho Won , Nayoun Won , Sungwoo Hwang , Eun Joo Jang , Soo Kyung Kwon , Yong Wook Kim , Jihyun Min , Garam Park , Shang Hyeun Park , Hyo Sook Jang , Shin Ae Jun , Yong Seok Han
IPC: H01L51/50 , C09K11/08 , C08L57/10 , G02F1/13357 , H01L27/32 , C09K11/02 , C09K11/56 , C09K11/70 , C09K11/88 , H05B33/14 , B82Y40/00 , B82Y20/00 , G02F1/1335
Abstract: A cadmium free quantum dot not including cadmium and including: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, a composition and composite including the same, and an electronic device.
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28.发明授权公开(公告)号：US11492549B2
公开(公告)日：2022-11-08
申请号：US16851539
申请日：2020-04-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Soo Kyung Kwon , Seon-Yeong Kim , Yong Wook Kim , Ji-Yeong Kim , Eun Joo Jang
Abstract: A quantum dot comprising zinc, tellurium, and selenium and not comprising cadmium, wherein a maximum luminescent peak of the quantum dot is present in a wavelength range of greater than about 470 nanometers (nm) and a quantum efficiency of the quantum dot is greater than or equal to about 10%, and wherein the quantum dot comprises a core comprising a first semiconductor nanocrystal and a semiconductor nanocrystal shell disposed on the core.
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公开(公告)号：US10950741B2
公开(公告)日：2021-03-16
申请号：US16234694
申请日：2018-12-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Shin Ae Jun , Eun Joo Jang , Soo Kyung Kwon , Taek Hoon Kim , Won Joo Lee
IPC: H01L31/0296 , H01L31/0304 , H01L31/0352 , B82Y40/00 , B82Y30/00
Abstract: A nanocrystal including a core including a Group III element and a Group V element, and a monolayer shell on the surface of the core, the shell including a compound of the formula ZnSexS(1-x), wherein 0≤x≤1, and wherein an average mole ratio of Se:S in the monolayer shell ranges from about 2:1 to about 20:1.
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30.发明授权Semiconductor nanocrystal-polymer composite, method of preparing the same, and composite film and optoelectronic device including the same 有权半导体纳米晶体 - 聚合物复合材料，其制备方法，以及复合膜和包括其的光电子器件公开(公告)号：US09082982B2
公开(公告)日：2015-07-14
申请号：US13656327
申请日：2012-10-19
Applicant: Samsung Electronics Co., Ltd.
Inventor： Shin Ae Jun , Hyun A Kang , Eun Joo Jang , Soo Kyung Kwon , Hyo Sook Jang
IPC: H01L29/08 , H01L51/00 , C09K11/02 , C09K11/56 , H01L33/50 , C09K11/88 , C01B17/20 , C01B19/00 , B82Y30/00 , H01L51/50
CPC classification number: H01L51/0043 , B82Y30/00 , C01B17/20 , C01B19/007 , C01P2002/88 , C01P2004/64 , C01P2004/84 , C09K11/02 , C09K11/025 , C09K11/565 , C09K11/883 , H01L33/501 , H01L33/502 , H01L33/507 , H01L51/004 , H01L51/50 , H01L2224/16145 , H01L2224/48091 , H01L2924/00014
Abstract: A semiconductor nanocrystal-polymer composite including a semiconductor nanocrystal, a polymer comprising a plurality of carboxylate anion groups (—COO−) bindable to a surface of the semiconductor nanocrystal, and a metal cation bindable to a carboxylate anion group of the plurality of carboxylate anion groups.
Abstract translation: 包括半导体纳米晶体的半导体纳米晶体 - 聚合物复合物，包含可与半导体纳米晶体的表面结合的多个羧酸根阴离子基团（-COO-）的聚合物和可结合多个羧酸根阴离子的羧酸根阴离子基团的金属阳离子 团体
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