公开(公告)号：US20190272107A1

公开(公告)日：2019-09-05

申请号：US16415068

申请日：2019-05-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-San Kim ,  Kyung Ho Kim ,  Seokhwan Kim ,  Seunguk Shin ,  Jihyun Lim

IPC: G06F3/06 ,  G06F13/24

Abstract: A computer system includes a host and a storage device. The host provides an input/output request (IO request). The storage device receives the IO request from the host and sends an interrupt informing input/output completion (IO completion) to the host after completing the IO request. The host adjusts the number of generated interrupts of the storage device using the number of delayed IOs. The computer system may adaptively control interrupt generation of the storage device based on a load status of a CPU or the number of delayed IOs. The interrupt generation of the storage device may be adjusted to obtain a CPU gain without loss of performance or processing time of the computer system.

公开(公告)号：US10042754B2

公开(公告)日：2018-08-07

申请号：US14302696

申请日：2014-06-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangkwon Moon ,  Kyung Ho Kim ,  Seunguk Shin ,  Sung Won Jung

IPC: G06F12/02

Abstract: An access method of a nonvolatile memory device included in a user device includes receiving a write request to write data into the nonvolatile memory device; detecting an application issuing the write request, a user context, a queue size of a write buffer, an attribute of the write-requested data, or an operation mode of the user device; and deciding one of a plurality of write modes to use for writing the write-requested data into the nonvolatile memory device according to the detected information. The write modes have different program voltages and verify voltage sets.

公开(公告)号：US09804801B2

公开(公告)日：2017-10-31

申请号：US14667242

申请日：2015-03-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangkwon Moon ,  Jin-Soo Kim ,  Young-Sik Lee ,  Jinkyu Jeong ,  Kyung Ho Kim

IPC: G06F12/00 ,  G06F13/00 ,  G06F3/06

CPC classification number: G06F3/068 ,  G06F3/0611 ,  G06F3/065 ,  G06F3/0656 ,  G06F2003/0691

Abstract: A method of processing data in a memory system including a control unit and a hybrid memory device having a first memory and a second memory, includes; receiving first write data, storing the first write data in the first memory and assigning a first group state from among a plurality of group states to the stored first write data in response to first attribution information, completing a data processing operation in the memory system directed to the stored first write data that changes the attribution information associated with the stored first write data by monitoring of the first attribution information using an operating system running on the memory controller, and changing the first group state assigned to the stored first write data to a second group state from among the plurality of group states, the second group state having a different priority than a priority for the first group state.

公开(公告)号：US09742107B2

公开(公告)日：2017-08-22

申请号：US15047069

申请日：2016-02-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Wook Choi ,  Kyung Ho Kim ,  Sung Yub Kim ,  Han Eol Park ,  Jeong In Lee ,  Jae Young Chang

IPC: H01R39/00 ,  H01R13/58 ,  G06F1/16 ,  H01R13/631 ,  H01R31/06 ,  H04M1/04

CPC classification number: H01R13/5829 ,  G06F1/1632 ,  H01R13/58 ,  H01R13/6315 ,  H01R31/065 ,  H02J7/0044 ,  H02J7/0052 ,  H02J2007/0062 ,  H04M1/04

Abstract: A connector module may include: a connector body including an interior space with an empty area therein; and a connector part disposed on one side of the connector body. The connector part may include: a connector protruding from the connector body; and a connector holder seated in the empty area of the connector body and configured to secure the connector thereto. The connector holder may be configured to move the connector in one direction in response to an external force. A fixing part may be connected to one side of the connector body in a hinged fashion and being rotatable relative to the connector.

公开(公告)号：US09477589B2

公开(公告)日：2016-10-25

申请号：US14489676

申请日：2014-09-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangkwon Moon ,  Ji Hong Kim ,  Ji Sung Park ,  Hyunchul Park ,  Kyung Ho Kim

IPC: G06F12/00 ,  G06F12/02 ,  G06F3/06 ,  G06F17/30

CPC classification number: G06F12/0238 ,  G06F3/06 ,  G06F17/30156 ,  G06F17/30191 ,  G06F17/3033

Abstract: A storage device is provided which includes a nonvolatile memory device configured to store a plurality of reference data, a memory configured to store a hash manage table used to manage a plurality of reference hash keys of each of the plurality of reference data, a hash key generator configured to generate a plurality of hash keys based on write requested data, and a memory controller configured to compare the plurality of hash keys and reference hash keys of each reference data to determine whether to store the write requested data in the nonvolatile memory device. The memory controller selects one of the plurality of reference data according to a similarity between the plurality of hash keys and the plurality of reference hash keys of each reference data and stores the write requested data and the selected reference data in the nonvolatile memory device to refer to each other.

Abstract translation: 提供一种存储装置，其包括被配置为存储多个参考数据的非易失性存储装置，被配置为存储用于管理多个参考数据中的每一个的多个参考散列密钥的散列管理表的存储器，散列密钥 生成器，其被配置为基于写入请求的数据生成多个散列密钥;以及存储器控制器，被配置为比较每个参考数据的多个散列密钥和参考散列密钥，以确定是否将写入请求的数据存储在非易失性存储器件中。 存储器控制器根据多个散列键和每个参考数据的多个参考散列键之间的相似度来选择多个参考数据中的一个，并将写入请求的数据和所选择的参考数据存储在非易失性存储器件中以引用 对彼此。

公开(公告)号：US09081658B2

公开(公告)日：2015-07-14

申请号：US13734244

申请日：2013-01-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunchul Park ,  Sangmok Kim ,  Kyung Ho Kim ,  Otae Bae ,  Donggi Lee

IPC: G06F12/00 ,  G06F12/02

CPC classification number: G06F12/02 ,  G06F12/0238 ,  G06F12/0246 ,  G06F2212/7202 ,  G06F2212/7203

Abstract: Disclosed is a data managing method of a storage device which includes at least one nonvolatile memory device and a controller controlling the nonvolatile memory device. The data managing method includes receiving an input/output request and generating a section directing logical addresses based on the input/output request. The section is managed using section information, and the section information includes a start logical address corresponding to the input/output request, spatial locality information having the number of the directed logical addresses, and historical request information.

Abstract translation: 公开了一种存储装置的数据管理方法，其包括至少一个非易失性存储装置和控制非易失性存储装置的控制器。 数据管理方法包括接收输入/输出请求并根据输入/输出请求生成指向逻辑地址的部分。 该部分使用部分信息进行管理，部分信息包括与输入/输出请求对应的起始逻辑地址，具有定向逻辑地址数量的空间位置信息和历史请求信息。

公开(公告)号：US20140372678A1

公开(公告)日：2014-12-18

申请号：US14302696

申请日：2014-06-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangkwon Moon ,  Kyung Ho Kim ,  Seunguk Shin ,  Sung Won Jung

IPC: G06F12/02

CPC classification number: G06F12/0246 ,  G06F2212/7207 ,  Y02D10/13

Abstract: An access method of a nonvolatile memory device included in a user device includes receiving a write request to write data into the nonvolatile memory device; detecting an application issuing the write request, a user context, a queue size of a write buffer, an attribute of the write-requested data, or an operation mode of the user device; and deciding one of a plurality of write modes to use for writing the write-requested data into the nonvolatile memory device according to the detected information. The write modes have different program voltages and verify voltage sets.

Abstract translation: 包括在用户装置中的非易失性存储装置的访问方法包括：接收写入请求以将数据写入非易失性存储装置; 检测发出写请求的应用，用户上下文，写缓冲器的队列大小，写请求数据的属性或用户设备的操作模式; 以及根据检测到的信息，确定用于将写入请求的数据写入非易失性存储器件的多个写入模式之一。 写入模式具有不同的编程电压并验证电压组。